Properties of Crystalline Silicon

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Author :
Publisher : IET
ISBN 13 : 9780852969335
Total Pages : 1054 pages
Book Rating : 4.9/5 (693 download)

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Book Synopsis Properties of Crystalline Silicon by : Robert Hull

Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.

Silicon Molecular Beam Epitaxy

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Author :
Publisher : CRC Press
ISBN 13 : 1351085077
Total Pages : 306 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Silicon-Based Millimeter-Wave Devices

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3642790313
Total Pages : 359 pages
Book Rating : 4.6/5 (427 download)

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Book Synopsis Silicon-Based Millimeter-Wave Devices by : Johann-Friedrich Luy

Download or read book Silicon-Based Millimeter-Wave Devices written by Johann-Friedrich Luy and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: A description of field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are covered, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter, while two whole chapters are devoted to silicon/germanium devices. The integration of devices in monolithic circuits is explained together with advanced technologies, such as the self-mixing oscillator operation, before concluding with sensor and system applications.

Semiconductor Surfaces and Interfaces

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3662044595
Total Pages : 548 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Semiconductor Surfaces and Interfaces by : Winfried Mönch

Download or read book Semiconductor Surfaces and Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

Electronic Properties of Semiconductor Interfaces

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3662069458
Total Pages : 269 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Electronic Properties of Semiconductor Interfaces by : Winfried Mönch

Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Physics of Semiconductor Devices

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 1119429137
Total Pages : 944 pages
Book Rating : 4.1/5 (194 download)

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Book Synopsis Physics of Semiconductor Devices by : Simon M. Sze

Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

Silicon Surfaces and Formation of Interfaces

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Author :
Publisher : World Scientific
ISBN 13 : 9789810232863
Total Pages : 580 pages
Book Rating : 4.2/5 (328 download)

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Book Synopsis Silicon Surfaces and Formation of Interfaces by : Jarek Dabrowski

Download or read book Silicon Surfaces and Formation of Interfaces written by Jarek Dabrowski and published by World Scientific. This book was released on 2000 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.

Metallization and Metal-Semiconductor Interfaces

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1461307953
Total Pages : 501 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Metallization and Metal-Semiconductor Interfaces by : Inder P. Batra

Download or read book Metallization and Metal-Semiconductor Interfaces written by Inder P. Batra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.

Electronic Structure of Semiconductor Heterojunctions

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Publisher : Springer Science & Business Media
ISBN 13 : 9400930739
Total Pages : 348 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Electronic Structure of Semiconductor Heterojunctions by : Giorgio Margaritondo

Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

Evaluation of Advanced Semiconductor Materials by Electron Microscopy

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1461305276
Total Pages : 413 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Evaluation of Advanced Semiconductor Materials by Electron Microscopy by : David Cherns

Download or read book Evaluation of Advanced Semiconductor Materials by Electron Microscopy written by David Cherns and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.

Silicon Analog Components

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Publisher : Springer
ISBN 13 : 3030150852
Total Pages : 683 pages
Book Rating : 4.0/5 (31 download)

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Book Synopsis Silicon Analog Components by : Badih El-Kareh

Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 683 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.

Surfaces and Interfaces of Solid Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 3662031329
Total Pages : 508 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Surfaces and Interfaces of Solid Materials by : Hans Lüth

Download or read book Surfaces and Interfaces of Solid Materials written by Hans Lüth and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: Surfaces and Interfaces of Solid Materials emphasises both experimental and theoretical aspects of surface and interface physics. Beside the techniques of preparing well-defined solid surfaces and interfaces basic models for the description of structural, vibronic and electronic properties of interfaces are described, as well as fundamental aspects of adsorption and layer growth. Because of its importance for modern microelectronics special emphasis is placed on the electronic properties of semiconductor interfaces and heterostructures. Experimental topics covering the basics of ultrahigh-vacuum technology, electron optics, surface spectroscopies and electrical interface characterization techniques are presented in the form of separate panels.

Proceedings of the 11th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, 31 January-2 February 1984, Pinehurst Hotel, Pinehurst, North Carolina

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Publisher :
ISBN 13 :
Total Pages : 280 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Proceedings of the 11th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, 31 January-2 February 1984, Pinehurst Hotel, Pinehurst, North Carolina by : Robert S. Bauer

Download or read book Proceedings of the 11th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, 31 January-2 February 1984, Pinehurst Hotel, Pinehurst, North Carolina written by Robert S. Bauer and published by . This book was released on 1984 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electronic Structure of Metal-Semiconductor Contacts

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Publisher : Springer Science & Business Media
ISBN 13 : 9400906579
Total Pages : 302 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Electronic Structure of Metal-Semiconductor Contacts by : Winfried Mönch

Download or read book Electronic Structure of Metal-Semiconductor Contacts written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983

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Author :
Publisher : CRC Press
ISBN 13 : 1000112160
Total Pages : 533 pages
Book Rating : 4.0/5 (1 download)

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Book Synopsis Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983 by : A.G. Cullis

Download or read book Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983 written by A.G. Cullis and published by CRC Press. This book was released on 2020-11-25 with total page 533 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21–23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors.

Semiconductor Materials for Optoelectronics and LTMBE Materials

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Author :
Publisher : Elsevier
ISBN 13 : 1483290425
Total Pages : 365 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Semiconductor Materials for Optoelectronics and LTMBE Materials by : J.P. Hirtz

Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.

Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983

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Author :
Publisher : CRC Press
ISBN 13 : 9780854981588
Total Pages : 552 pages
Book Rating : 4.9/5 (815 download)

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Book Synopsis Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983 by : Cullis

Download or read book Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983 written by Cullis and published by CRC Press. This book was released on 1983-01-01 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: