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Structural And Electrical Investigation Of The Si Sio2 Interface In Thermally Oxidized Silicon
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Book Synopsis Structural and Electrical Investigation of the Si-SiO2 Interface in Thermally Oxidized Silicon by : B. E. Deal
Download or read book Structural and Electrical Investigation of the Si-SiO2 Interface in Thermally Oxidized Silicon written by B. E. Deal and published by . This book was released on 1979 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dependence of fixed oxide charge density (Q sub ss)/q), interface state density (N sub st), and electron spin resonance P sub b signals on thermal oxidation process variables as well as their interrelationship has been investigated. Both n- and p-type silicon substrates having (111) and (100) orientation were employed in this study. Measurement techniques included conventional 1 MHz capacitance-voltage (C-V) analysis, quasistatic C-V analysis, and electron spin resonance. The oxide charges resulting from postoxidation in situ anneal in nitrogen were found to be similar in nature and magnitude to those obtained following a similar treatment in argon. Some reduction in N sub st was observed for thicker oxides following a post-metallization H2 anneal. Strong evidence is obtained for a proportionality between ESR signals and interface states density with varying process parameters modifying the P sub b to N sub st relationship. The effects of iron ion implantation (before or after oxidation) on oxide charges and P sub b signals has also been investigated. This work, in addition to clarifying the relationship between fixed oxide charges, interface states, and ESR P sub b signals, demonstrates the significance of ESR as a tool in the characterization of the Si-SiO2 system. (Author).
Book Synopsis Fundamental Aspects of Silicon Oxidation by : Yves J. Chabal
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 by : Hisham Z. Massoud
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Report and Recommendation of the President to the Board of Directors Proposed Asian Development Fund Grant, and Technical Assistance Grant Kingdom of Tonga Integrated Urban Development Sector Project by :
Download or read book Report and Recommendation of the President to the Board of Directors Proposed Asian Development Fund Grant, and Technical Assistance Grant Kingdom of Tonga Integrated Urban Development Sector Project written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 by : B.E. Deal
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Download or read book The Si-SiO2 System written by P. Balk and published by Elsevier Publishing Company. This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Surface Properties of Oxidized Silicon by : Else Kooi
Download or read book The Surface Properties of Oxidized Silicon written by Else Kooi and published by Springer. This book was released on 2013-12-21 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices by : Eric Garfunkel
Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Download or read book Technical Abstract Bulletin written by and published by . This book was released on 1980 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 by : Hisham Z. Massoud
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1985 with total page 792 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Devices for Integrated Circuits by : H. Craig Casey
Download or read book Devices for Integrated Circuits written by H. Craig Casey and published by John Wiley & Sons. This book was released on 1998-12-14 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.
Book Synopsis Insulating Films on Semiconductors 1991, Proceedings from the 7th Biennial European Conference. by : W. Eccleston
Download or read book Insulating Films on Semiconductors 1991, Proceedings from the 7th Biennial European Conference. written by W. Eccleston and published by CRC Press. This book was released on 1991-09-01 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Insulating Films on Semiconductors 1991 covers the fundamental aspects of the properties of dielectrics/semiconductor structures, the study of high field/hot electron/radiation induced phenomena, and the developments in measurement techniques for looking at interfaces and surfaces on semiconductor materials. The volume is written for researchers in physics, materials science, electronics, and electrical engineering.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface by : E. A. Irene
Download or read book Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by E. A. Irene and published by . This book was released on 1988 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of the thin silicon dioxide (SiO2) films via thermal oxidation on single crystal silicon substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin Si02 formation yet exists, but recent studies lead in new directions towards this goal.
