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Strain Induced Effects In Advanced Mosfets
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Book Synopsis Strain-Induced Effects in Advanced MOSFETs by : Viktor Sverdlov
Download or read book Strain-Induced Effects in Advanced MOSFETs written by Viktor Sverdlov and published by Springer Science & Business Media. This book was released on 2011-01-06 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Book Synopsis Strain-Engineered MOSFETs by : C.K. Maiti
Download or read book Strain-Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Book Synopsis Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting by : Alexei Nazarov
Download or read book Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting written by Alexei Nazarov and published by Springer. This book was released on 2014-08-28 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.
Book Synopsis Introducing Technology Computer-Aided Design (TCAD) by : Chinmay K. Maiti
Download or read book Introducing Technology Computer-Aided Design (TCAD) written by Chinmay K. Maiti and published by CRC Press. This book was released on 2017-03-16 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.
Author :Viranjay M. Srivastava Publisher :Springer Science & Business Media ISBN 13 :3319011650 Total Pages :209 pages Book Rating :4.3/5 (19 download)
Book Synopsis MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch by : Viranjay M. Srivastava
Download or read book MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch written by Viranjay M. Srivastava and published by Springer Science & Business Media. This book was released on 2013-10-07 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
Book Synopsis Computer Aided Design Of Micro- And Nanoelectronic Devices by : Chinmay Kumar Maiti
Download or read book Computer Aided Design Of Micro- And Nanoelectronic Devices written by Chinmay Kumar Maiti and published by World Scientific. This book was released on 2016-10-27 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
Book Synopsis Advanced CMOS-Compatible Semiconductor Devices 17 by : Y. Omura
Download or read book Advanced CMOS-Compatible Semiconductor Devices 17 written by Y. Omura and published by The Electrochemical Society. This book was released on 2015 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 75th Anniversary of the Transistor by : Arokia Nathan
Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-07-11 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Book Synopsis The Physics of Semiconductors by : Marius Grundmann
Download or read book The Physics of Semiconductors written by Marius Grundmann and published by Springer Nature. This book was released on 2021-03-06 with total page 905 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
Book Synopsis Large-Scale Scientific Computing by : Ivan Lirkov
Download or read book Large-Scale Scientific Computing written by Ivan Lirkov and published by Springer. This book was released on 2015-11-29 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the thoroughly refereed post-conference proceedings of the 10th International Conference on Large-Scale Scientific Computations, LSSC 2015, held in Sozopol, Bulgaria, in June 2015. The 49 revised full papers presented were carefully reviewed and selected from 64 submissions. The general theme for LSSC 2015 was Large-Scale Scientific Computing with a particular focus on the organized special sessions: enabling exascale computation; control and uncertain systems; computational microelectronics - from monte carlo to deterministic approaches; numerical methods for multiphysics problems; large-scale models: numerical methods, parallel computations and applications; mathematical modeling and analysis of PDEs describing physical problems; a posteriori error control and iterative methods for maxwell type problems; efficient algorithms for hybrid HPC systems; multilevel methods on graphs; and applications of metaheuristics to large-scale problems.
Book Synopsis Simulation of Semiconductor Processes and Devices 2004 by : Gerhard Wachutka
Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Book Synopsis Energy Efficient Computing & Electronics by : Santosh K. Kurinec
Download or read book Energy Efficient Computing & Electronics written by Santosh K. Kurinec and published by CRC Press. This book was released on 2019-01-31 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: In our abundant computing infrastructure, performance improvements across most all application spaces are now severely limited by the energy dissipation involved in processing, storing, and moving data. The exponential increase in the volume of data to be handled by our computational infrastructure is driven in large part by unstructured data from countless sources. This book explores revolutionary device concepts, associated circuits, and architectures that will greatly extend the practical engineering limits of energy-efficient computation from device to circuit to system level. With chapters written by international experts in their corresponding field, the text investigates new approaches to lower energy requirements in computing. Features • Has a comprehensive coverage of various technologies • Written by international experts in their corresponding field • Covers revolutionary concepts at the device, circuit, and system levels
Book Synopsis Electrical and Electronic Devices, Circuits, and Materials by : Suman Lata Tripathi
Download or read book Electrical and Electronic Devices, Circuits, and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.
Author :Sitangshu Bhattacharya Publisher :Springer Science & Business Media ISBN 13 :3642312470 Total Pages :549 pages Book Rating :4.6/5 (423 download)
Book Synopsis Effective Electron Mass in Low-Dimensional Semiconductors by : Sitangshu Bhattacharya
Download or read book Effective Electron Mass in Low-Dimensional Semiconductors written by Sitangshu Bhattacharya and published by Springer Science & Business Media. This book was released on 2012-10-06 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.
Book Synopsis Semiconductor Physics by : Sandip Tiwari
Download or read book Semiconductor Physics written by Sandip Tiwari and published by Oxford University Press. This book was released on 2020-09-22 with total page 832 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of semiconductor physics today includes not only many of the aspects that constitute solid state physics, but also much more. It includes what happens at the nanoscale and at surfaces and interfaces, behavior with few interaction events and few carriers —- electrons and their quasi-particle holes —- in the valence bands, the exchange of energies in various forms, the coupling of energetic events over short and long length scales, quantum reversibility tied to macroscale linearity and eventually to nonlinearities, the thermodynamic and statistical consequences of fluctuation-dissipation, and others. This text brings together traditional solid-state approaches from the 20th century with developments of the early part of the 21st century, to reach an understanding of semiconductor physics in its multifaceted forms. It reveals how an understanding of what happens within the material can lead to insights into what happens in its use. The collection of four textbooks in the Electroscience series culminates in a comprehensive understanding of nanoscale devices — electronic, magnetic, mechanical and optical — in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and solid-state physics.
Book Synopsis Heavily-Doped 2D-Quantized Structures and the Einstein Relation by : Kamakhya P. Ghatak
Download or read book Heavily-Doped 2D-Quantized Structures and the Einstein Relation written by Kamakhya P. Ghatak and published by Springer. This book was released on 2014-07-30 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
Book Synopsis Semiconductor Process Integration 10 by : J. Murota
Download or read book Semiconductor Process Integration 10 written by J. Murota and published by The Electrochemical Society. This book was released on with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt:
