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Author : E. Simoen
Publisher : The Electrochemical Society
ISBN 13 : 1607685485
Total Pages : 315 pages
Book Rating : 4.6/5 (76 download)
Download or read book High Purity and High Mobility Semiconductors 13 written by E. Simoen and published by The Electrochemical Society. This book was released on 2014 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tony Schenk
Publisher : BoD – Books on Demand
ISBN 13 : 3743127296
Total Pages : 194 pages
Book Rating : 4.7/5 (431 download)
Download or read book Formation of Ferroelectricity in Hafnium Oxide Based Thin Films written by Tony Schenk and published by BoD – Books on Demand. This book was released on 2017-03-15 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Author : Surik Khudaverdyan
Publisher : Walter de Gruyter GmbH & Co KG
ISBN 13 : 3111428028
Total Pages : 190 pages
Book Rating : 4.1/5 (114 download)
Download or read book Semiconductor Photodetectors written by Surik Khudaverdyan and published by Walter de Gruyter GmbH & Co KG. This book was released on 2024-10-07 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exponential increase of the Internet of Things (IoTs) has revolutionized lives, but it has also resulted in massive resource consumption and environmental pollution. In conjunction with Green IoTs (GioTs), there is a parallel effort to create highly sensitive devices by device design to conserve power. Furthermore, numerous applications require deciphering information from very weak optical signals, such as from radiation, medical imaging, industrial non-destructive testing, quantum technologies, astronomy, and various other such routine measurements. It is necessary to design photodetectors with high photosensitivity using various technological innovations to reduce the noise level, such as with two inversely directed barriers, as proposed by the authors, in which the currents of devices mutually compensate each other and create low dark current with high photosensitivity thresholds. The implementation of internal amplification of photocurrents in them can provide high photosensitivity. The book presents the mechanism for the injection amplification of the photocurrent in devices based on cadmium telluride and silicon with a high-resistance sublayer, as well as the study of creating highly sensitive devices, that are resistant to radiation of optical and X-ray ranges of electromagnetic waves. Particular attention is drawn to the mutual compensation process for photocurrents arising in opposite potential barriers covering the layer during longitudinal absorption of radiation in the sublayer. Using structures on the base cadmium telluride and silicon, as an example, the phenomenon of a change in the sign of the spectral photocurrent and the possibilities of wave measurement is provided by this phenomenon. Photoelectronic processes occurring in these semiconductor structures are investigated, and expressions are obtained that relate the parameters of optical radiation and the structure. The algorithm developed using these expressions is based on a new spectral analysis mechanism, which is implemented to prepare inexpensive, reduced dimensions with the need for less materials, and energy-intensive devices. All this is considered in the context of solving urgent problems of quantitative remote identification of the components of an optically transparent medium. The global spectral analysis market is focused on the development of semiconductor photodetectors with spectral-selective sensitivity for spectral analysis. The use of such a photodetector in spectrometry will eliminate the use of opticalmechanical systems due to the new physical principle used in it and will ensure high resolution and reliability of spectrum recording. As environmental threats become increasingly unpredictable, there is also a growing need to develop remote spectral analysis, identification, and assessment of substances in air, water, and food, assessment of the effects of substances on humans, animals, and vegetation, and detection and elimination of pollution sources. Here, the spectral analysis of the electromagnetic radiation transmitting the information from the object with the help of primary sensors is essential.
Author : Wen Siang Lew
Publisher : Springer Nature
ISBN 13 : 9811569126
Total Pages : 439 pages
Book Rating : 4.8/5 (115 download)
Download or read book Emerging Non-volatile Memory Technologies written by Wen Siang Lew and published by Springer Nature. This book was released on 2021-01-09 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author : Vijay Nath
Publisher : Springer Nature
ISBN 13 : 9811574863
Total Pages : 817 pages
Book Rating : 4.8/5 (115 download)
Download or read book Nanoelectronics, Circuits and Communication Systems written by Vijay Nath and published by Springer Nature. This book was released on 2020-11-17 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book features selected papers presented at the Fifth International Conference on Nanoelectronics, Circuits and Communication Systems (NCCS 2019). It covers a range of topics, including nanoelectronic devices, microelectronics devices, material science, machine learning, Internet of things, cloud computing, computing systems, wireless communication systems, advances in communication 5G and beyond. Further, it discusses VLSI circuits and systems, MEMS, IC design and testing, electronic system design and manufacturing, speech signal processing, digital signal processing, FPGA-based wireless communication systems and FPGA-based system design, Industry 4.0, e-farming, semiconductor memories, and IC fault detection and correction.
Author : Mourad Elsobky
Publisher : Springer Nature
ISBN 13 : 3030977269
Total Pages : 153 pages
Book Rating : 4.0/5 (39 download)
Download or read book Ultra-Thin Sensors and Data Conversion Techniques for Hybrid System-in-Foil written by Mourad Elsobky and published by Springer Nature. This book was released on 2022-03-18 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reports on the design, fabrication and characterization of a set of flexible electronic components, including on-foil sensors, organic thin-film transistors and ultra-thin chips. The core of the work is on showing how to combine high-performance integrated circuits with large-area electronic components on a single polymeric foil, to realize smart electronic systems for different applications, such as temperature, humidity and mechanical stress sensors. The book offers an extensive introduction to Hybrid System-in-Foil technology (HySiF), and related on-chip/on-foil passive and active components. It presents six case studies designed to highlight key HySiF challenges, together with the methodology to address those challenges. Last but not least, it describes the development of a reconfigurable, energy-efficient Analog-to-Digital Converter for HySiF. All in all, this book provides readers with extensive information on the state of the art in the design and characterization of integrated circuits and hybrid electronic systems on flexible polymeric substrates. By describing significant advances in organic thin-film transistor technology, this work is expected to pave the way to future developments in the area of energy-efficient smart sensors and integrated circuits.
Author : Stefan Ferdinand Müller
Publisher : BoD – Books on Demand
ISBN 13 : 3739248947
Total Pages : 137 pages
Book Rating : 4.7/5 (392 download)
Download or read book Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes written by Stefan Ferdinand Müller and published by BoD – Books on Demand. This book was released on 2016-04-08 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.
Author : Trupti Ranjan Lenka
Publisher : Bentham Science Publishers
ISBN 13 : 9815238256
Total Pages : 358 pages
Book Rating : 4.8/5 (152 download)
Download or read book Nanoelectronic Devices and Applications written by Trupti Ranjan Lenka and published by Bentham Science Publishers. This book was released on 2024-07-02 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Author : Santosh K. Kurinec
Publisher : CRC Press
ISBN 13 : 1466560614
Total Pages : 448 pages
Book Rating : 4.4/5 (665 download)
Download or read book Nanoscale Semiconductor Memories written by Santosh K. Kurinec and published by CRC Press. This book was released on 2017-07-28 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Author : Filippo Giannazzo
Publisher : MDPI
ISBN 13 : 3038976067
Total Pages : 265 pages
Book Rating : 4.0/5 (389 download)
Download or read book Integration of 2D Materials for Electronics Applications written by Filippo Giannazzo and published by MDPI. This book was released on 2019-02-13 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Integration of 2D Materials for Electronics Applications" that was published in Crystals
Author : Amit Chaudhry
Publisher : Springer Science & Business Media
ISBN 13 : 1461468221
Total Pages : 211 pages
Book Rating : 4.4/5 (614 download)
Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Author : Jyotsna Kumar Mandal
Publisher : Springer Nature
ISBN 13 : 9811916691
Total Pages : 489 pages
Book Rating : 4.8/5 (119 download)
Download or read book Innovations in Signal Processing and Embedded Systems written by Jyotsna Kumar Mandal and published by Springer Nature. This book was released on 2022-09-13 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers four sections such as artificial intelligence and machine learning; VLSI and signal processing; robotics and automation; and communications and networking. This book is a collection of selected papers presented at the First International Conference on Innovations in Signal Processing and Embedded Systems (ICISPES 2021), organized by MLR Institute of Technology, Hyderabad, India, during October 22–23, 2021. The topics covered are advanced communication technologies, IoT-based systems and applications, application AI in computer vision, natural language processing, reinforcement learning, ANN and deep neural networks, RNN, GAN, CNN and RBM, SOC, NOC design, VLSI and CAD/CAM, cross-layer design, fault tolerance and computation theories, FPGA in outer space, nanotechnology, semiconductor technology, signal and image processing, high-performance computing, pattern recognition and computer vision innovations in robotics, reconfigurable robots, and MEMS/NEMS.
Author : Francis Balestra
Publisher : John Wiley & Sons
ISBN 13 : 1118622472
Total Pages : 518 pages
Book Rating : 4.1/5 (186 download)
Download or read book Nanoscale CMOS written by Francis Balestra and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author : Tibor Grasser
Publisher : Springer Nature
ISBN 13 : 3030375005
Total Pages : 724 pages
Book Rating : 4.0/5 (33 download)
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Author : Valentijn De Smedt
Publisher : Springer
ISBN 13 : 3319090038
Total Pages : 422 pages
Book Rating : 4.3/5 (19 download)
Download or read book Temperature- and Supply Voltage-Independent Time References for Wireless Sensor Networks written by Valentijn De Smedt and published by Springer. This book was released on 2014-11-07 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book investigates the possible circuit solutions to overcome the temperature and supply voltage-sensitivity of fully-integrated time references for ultra-low-power communication in wireless sensor networks. The authors provide an elaborate theoretical introduction and literature study to enable full understanding of the design challenges and shortcomings of current oscillator implementations. Furthermore, a closer look to the short-term as well as the long-term frequency stability of integrated oscillators is taken. Next, a design strategy is developed and applied to 5 different oscillator topologies and 1 sensor interface. All 6 implementations are subject to an elaborate study of frequency stability, phase noise and power consumption. In the final chapter all blocks are compared to the state of the art.
Author : Jean-Pierre Colinge
Publisher : Cambridge University Press
ISBN 13 : 1316558622
Total Pages : 269 pages
Book Rating : 4.3/5 (165 download)
Download or read book Nanowire Transistors written by Jean-Pierre Colinge and published by Cambridge University Press. This book was released on 2016-04-21 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in academia and industry.
Author : Debashis Dutta
Publisher : Springer Nature
ISBN 13 : 9813297751
Total Pages : 1004 pages
Book Rating : 4.8/5 (132 download)
Download or read book Advances in VLSI, Communication, and Signal Processing written by Debashis Dutta and published by Springer Nature. This book was released on 2019-12-03 with total page 1004 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprises select proceedings of the International Conference on VLSI, Communication and Signal processing (VCAS 2018). It looks at latest research findings in VLSI design and applications. The book covers a wide range of topics in electronics and communication engineering, especially in the area of microelectronics and VLSI design, communication systems and networks, and image and signal processing. The contents of this book will be useful to researchers and professionals alike.
