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Silicon Nanowire Field Effect Transistor Sinwfet And Its Circuit Level Performance
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Book Synopsis Silicon Nanowire Field-effect Transistor (SiNWFET) and Its Circuit Level Performance by : Siti Norazlin Bahador
Download or read book Silicon Nanowire Field-effect Transistor (SiNWFET) and Its Circuit Level Performance written by Siti Norazlin Bahador and published by . This book was released on 2014 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanowire Field Effect Transistors: Principles and Applications by : Dae Mann Kim
Download or read book Nanowire Field Effect Transistors: Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Book Synopsis Graphene, Nanotubes and Quantum Dots-Based Nanotechnology by : Yarub Al-Douri
Download or read book Graphene, Nanotubes and Quantum Dots-Based Nanotechnology written by Yarub Al-Douri and published by Woodhead Publishing. This book was released on 2022-07-28 with total page 978 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive look combining experimental and theoretical approaches to graphene, nanotubes, and quantum dots-based nanotechnology evaluation and development are including a review of key applications. Graphene, nanotubes, and quantum dots-based nanotechnology review the fundamentals, processing methods, and applications of this key materials system. The topics addressed are comprehensive including synthesis, preparation, both physical and chemical properties, both accepted and novel processing methods, modeling, and simulation. The book provides fundamental information on key properties that impact performance, such as crystal structure and particle size, followed by different methods to analyze, measure, and evaluate graphene, nanotubes, and quantum dots-based nanotechnology and particles. Finally, important applications are covered, including different applications of biomedical, energy, electronics, etc. Graphene, nanotubes, and quantum dots-based nanotechnology is appropriate for those working in the disciplines of nanotechnology, materials science, chemistry, physics, biology, and medicine. Provides a comprehensive overview of key topics both on the experimental side and the theoretical Discusses important properties that impact graphene, nanotubes, and quantum dots performance, processing methods both novel and accepted and important applications Reviews the most relevant applications, such as biomedical, energy, electronics, and materials ones
Book Synopsis GAA Silicon Nanowire Field Effect Transistor - A Compact Model by : Mayank Chakraverty
Download or read book GAA Silicon Nanowire Field Effect Transistor - A Compact Model written by Mayank Chakraverty and published by . This book was released on 2014-09-12 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanowire Field-Effect Transistor (FET) by : Antonio García-Loureiro
Download or read book Nanowire Field-Effect Transistor (FET) written by Antonio García-Loureiro and published by MDPI. This book was released on 2021-02-16 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
Book Synopsis Advanced Field-Effect Transistors by : Dharmendra Singh Yadav
Download or read book Advanced Field-Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Book Synopsis Fabrication and Characterization of High Performance Silicon Nanowire Field Effect Transistors by : Muhammad Maksudur Rahman
Download or read book Fabrication and Characterization of High Performance Silicon Nanowire Field Effect Transistors written by Muhammad Maksudur Rahman and published by . This book was released on 2011 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quasi one-dimensional (1-D) field-effect transistors (FET), such as Si nanowire FETs (Si NW-FETs), have shown promise for more aggressive channel length scaling, better electrostatic gate control, higher integration densities and low-power applications. At the same time, an accurate bench-marking of their performance remains a challenging task due to difficulties in definition of the exact channel length, gate capacitance and transconductance. In 1-D Si FETs, one also often observes a significant degradation of their mobility and on/off ratio. The goal of this study is to implement the idea of the FET performance enhancement while simultaneously performing a more rigorous data extraction. To achieve these goals, we fabricated dual-gate undoped Si NW-FETs with various NW diameters The Si NWs are grown by Au-catalyzed vapor-transport For our top-gate NW-FET, the subthreshold swing was determined to be 85-90 mV/decade, whereas the best subthreshold swings for Si NW-FETs until now were ~135-140 mV/decade. We achieved a ON/OFF current ratio of 10 7 due to improved electrostatic control and electron transport conditions inside the channel. This is on the higher end of any ON/OFF ratios thus far reported for NW FETs The hole mobility in our NW-FETs was around 250.400 cm[superscript 2] /Vs, according to different extraction procedures. In our mobility calculations we included the NW silicidation effect, which reduces the effective channel length. We calculated the top gate capacitance using Technology Computer Aided Design (TCAD) Sentaurus simulator, which gives more accurate value of capacitance of the NW over any analytical formulas. Thus we fabricate and rigorously study Si NW.s intrinsic properties which are very important for digital logic circuit application. In the second part of the study, we carried out simulation of Si NW FET devices to shed light on the carrier transport behavior that also explains experimental data.
Book Synopsis Silicon Nanowire Transistors by : Ahmet Bindal
Download or read book Silicon Nanowire Transistors written by Ahmet Bindal and published by Springer. This book was released on 2016-02-23 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.
Book Synopsis Study of Silicon Nanowire Field Effect Transistor for Analog and Digital Biosensing by : Pengyuan Zang
Download or read book Study of Silicon Nanowire Field Effect Transistor for Analog and Digital Biosensing written by Pengyuan Zang and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The advancement of semiconductor technology has popularized the low power, economical and small form-factor solid state devices, such as those highly integrated and interconnected as the fundamental infrastructure for the internet of things (IoT). Due to its CMOS-compatibility and electrical interface, the biosensor utilizing field effect transistor (FET) as transducer has become the perfect candidate to interface directly with the chemical and biological properties of the physical world. Especially, nanowire (NW) FET biosensor has received great attention as a highly sensitive biosensing platform, benefiting from its increased surface-to-volume ratio. In this work, several challenges and key aspects of existing NW FET biosensor were studied, and solutions were proposed to address these problems. For example, the hydrolytic stability of the surface sensing element was evaluated and improved by a hydrolysis process, which led to a significant increase in the overall biosensor performance. Another challenge is the noise in the electric potential of the sensing solutions. A secondary reference electrode was introduced in the biosensing system, and its potential was used to subtract the noise from the measured sensor output. Compared to a reference FET, this approach greatly reduced the system complexity and requirement, yet still improved the limit of detection (LOD) by 50 – 70%. This work also involved careful investigation into the analyte sensitivity, which can be considerably affected by the charge buffering effect from the surface hydroxyl groups. Analytical studies and numerical simulations were carried out, revealing that both low pH sensitivity and large analyte buffer capacity are required to achieve a reasonable analyte sensitivity. The most significant portion of this work was the experimental demonstration of the digital biosensing concept with single serpentine NW FET biosensor. The majority of existing FET biosensors utilized the device as an analog transducer, which measures the captured analyte density to generate an output, and suffers from various noise factors, especially the nonspecific changes of the sensing solutions than cannot be reduced by averaging. Digital biosensor no longer depends on the amplitude of the sensor output and is therefore better immune from these noise factors. Instead, the individual binding event of single analyte is counted and analyzed statistically to determine the analyte concentration. The single serpentine NW FET is the ideal device design to achieve digital biosensing. It maintains the low noise level with the equivalently long channel, yet achieves a small footprint enough for binding of only a single analyte. The binding of analyte to multiple segments of the NW results in both higher sensitivity and binding avidity. The small footprint also enables high integration density of the individual digital biosensors into an array format, which is a responsive, highly sensitive, and cost-effective future biosensing platform.
Book Synopsis Nanodevices for Integrated Circuit Design by : Suman Lata Tripathi
Download or read book Nanodevices for Integrated Circuit Design written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2023-10-18 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: NANODEVICES FOR INTEGRATED CIRCUIT DESIGN Nanodevices are an integral part of many of the technologies that we use every day. It is a constantly changing and evolving area, with new materials, processes, and applications coming online almost daily. Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design. This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.
Book Synopsis Effect of Channel Doping on Silicon Nanowire Field Effect Transistor Performance by : Raja Norasiah Raja Daud
Download or read book Effect of Channel Doping on Silicon Nanowire Field Effect Transistor Performance written by Raja Norasiah Raja Daud and published by . This book was released on 2011 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Simulation Study of Silicon Nanowire Field Effect Transistors (FETs) by :
Download or read book A Simulation Study of Silicon Nanowire Field Effect Transistors (FETs) written by and published by . This book was released on 2007 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract Silicon planar MOSFETs are approaching their scaling limits. New device designs are being explored to replace the existing planar technology. Among the possible new device designs are Double Gate (DG) FETs, FinFETs, Tri-Gate FETs and Omega- Gate FETs. The Silicon Nanowire Gate All Around (GAA) FET stands out as one of the most promising FET designs due to its maximum gate effect in controlling the short channel effects. Recent developments such as synthesis of highly ordered nanowires and fabrication of nanowires as small as 1nm in diameter have illustrated the progress possible in silicon nanowire technology In this study we have explored the silicon nanowire FET as a possible candidate to replace the currently planar MOSFETs. In this thesis we investigated the silicon nanowire FET device and compared its performance with that of a double gate (DG) FET. The software used for the study assumed quantum-ballistic transport (NanoWire), which was developed at Purdue University. Initially, we presented a comparison of Nanowire FET with DG FET with for devices with same physical parameters. It was seen that superior subthreshold characteristics are exhibited by a silicon nanowire FET. We also conducted an optimization study for the 25 nm node from the ITRS report. The final device was optimized for both High Performance and Low Operating Power applications. A further study on future technology nodes down to the 14 nm node was performed which revealed short channel effects becomes significant at gate lengths ~ 5 nm even for a silicon nanowire device. Finally, a process variation study was conducted in comparison with a FinFET device. It was concluded that a silicon nanowire FET shows less sensitivity to process variation except it has higher sensitivity in variation with the diameter at less than ~4 nm than for FinFET where significant quantum effects set in. Variation with the gate length was found to be much less sensitive for the silicon nanowire FET because of its superior gate control characteristics.
Book Synopsis Nanowire Transistors by : Jean-Pierre Colinge
Download or read book Nanowire Transistors written by Jean-Pierre Colinge and published by Cambridge University Press. This book was released on 2016-04-21 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in academia and industry.
Book Synopsis Tunneling Field Effect Transistor Technology by : Lining Zhang
Download or read book Tunneling Field Effect Transistor Technology written by Lining Zhang and published by Springer. This book was released on 2016-04-09 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Book Synopsis VLSI Design and Test by : Brajesh Kumar Kaushik
Download or read book VLSI Design and Test written by Brajesh Kumar Kaushik and published by Springer. This book was released on 2017-12-21 with total page 820 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the 21st International Symposium on VLSI Design and Test, VDAT 2017, held in Roorkee, India, in June/July 2017. The 48 full papers presented together with 27 short papers were carefully reviewed and selected from 246 submissions. The papers were organized in topical sections named: digital design; analog/mixed signal; VLSI testing; devices and technology; VLSI architectures; emerging technologies and memory; system design; low power design and test; RF circuits; architecture and CAD; and design verification.
Book Synopsis Silicon Nanowire Field Effect Transistors by : Oren Shirak
Download or read book Silicon Nanowire Field Effect Transistors written by Oren Shirak and published by . This book was released on 2008 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Towards Silicon Nanowire Field-effect Transistors by : Martin Enderlein
Download or read book Towards Silicon Nanowire Field-effect Transistors written by Martin Enderlein and published by . This book was released on 2009* with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:
