Author : National Aeronautics and Space Administration (NASA)
Publisher : Createspace Independent Publishing Platform
ISBN 13 : 9781721590858
Total Pages : 30 pages
Book Rating : 4.5/5 (98 download)
Book Synopsis Silicon Carbide Diodes Performance Characterization and Comparison with Silicon Devices by : National Aeronautics and Space Administration (NASA)
Download or read book Silicon Carbide Diodes Performance Characterization and Comparison with Silicon Devices written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-06-20 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating. Lebron-Velilla, Ramon C. and Schwarze, Gene E. and Trapp, Scott Glenn Research Center NASA/TM-2003-212511, E-14071, NAS 1.15:212511