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Silicon Carbide And Related Materials 1999
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Book Synopsis Silicon carbide and related materials - 1999 : ICSCRM'99 ; proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 ; Research Triangle Park, North Carolina, USA ; October 10 - 15, 1999. 1 (2000) by : Calvin H. Carter
Download or read book Silicon carbide and related materials - 1999 : ICSCRM'99 ; proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 ; Research Triangle Park, North Carolina, USA ; October 10 - 15, 1999. 1 (2000) written by Calvin H. Carter and published by . This book was released on 2000 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99), held October 10-15, 1999, at Research Triangle Park, North Carolina. The growth of this biennial international conference to over 650 participants from 25 countries attests to the rapidly increasing interest in large bandgap semiconductors in both academia and industry. These volumes contain 401 papers, 19 of which were invited. The principal topics organized as chapters are: 1) SiC bulk growth, 2) SiC epitaxy and thin film growth, 3) physical properties of SiC (structure, surfaces and interfaces, optical and electrical properties, and magnetic resonance), 4) processing of SiC, 5) SiC devices, 6) growth of III-Nitrides and related materials, 6) physical properties of III-Nitrides, and 8) III-Nitrides: processing and devices.
Book Synopsis Silicon Carbide and Related Materials--1999 by :
Download or read book Silicon Carbide and Related Materials--1999 written by and published by . This book was released on 2000 with total page 1684 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials - 1999 by : Calvin H. Carter Jr.
Download or read book Silicon Carbide and Related Materials - 1999 written by Calvin H. Carter Jr. and published by Trans Tech Publications Ltd. This book was released on 2000-05-10 with total page 1786 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM99), held October 10-15, 1999, at Research Triangle Park, North Carolina.
Book Synopsis Silicon Carbide and Related Materials - 1999 by :
Download or read book Silicon Carbide and Related Materials - 1999 written by and published by . This book was released on 2000 with total page 1684 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials--1999 by : Calvin H. Carter
Download or read book Silicon Carbide and Related Materials--1999 written by Calvin H. Carter and published by . This book was released on 2000 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) held October 10-15, 1999, at Research Triangle Park, North Carolina. They contain 401 papers, 19 of which were invited.
Book Synopsis Silicon Carbide and Related Materials--1999 by :
Download or read book Silicon Carbide and Related Materials--1999 written by and published by . This book was released on 2000 with total page 904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Abstracts written by and published by . This book was released on 1999* with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials--1999 by :
Download or read book Silicon Carbide and Related Materials--1999 written by and published by . This book was released on 2000 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials - 1999 by :
Download or read book Silicon Carbide and Related Materials - 1999 written by and published by . This book was released on 1999 with total page 891 pages. Available in PDF, EPUB and Kindle. Book excerpt: These volumes contain written versions of papers which were presented at the International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM'99), held October 10-15, 1999 in Research Triangle Park, North Carolina. Over 650 participants from 25 countries attended the conference. This attendance was the highest in the conference series to date. This record attendance and the large number of papers submitted attest to the rapidly increasing interest in wide bandgap semiconductors in both academic and industrial communities. Contained in the two volumes of these proceeding are 401 papers, 19 of which were invited. They document our present understanding of the many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical approaches,-- materials characterization, device processing and design, fabrication and characterization of electronic and optoelectronic devices, some with outstanding performance.
Book Synopsis Silicon Carbide and Related Materials - 1999 by :
Download or read book Silicon Carbide and Related Materials - 1999 written by and published by . This book was released on 1999 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt: These volumes contain written versions of papers which were presented at the International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM'99), held October 10-15, 1999 in Research Triangle Park, North Carolina. Over 650 participants from 25 countries attended the conference. This attendance was the highest in the conference series to date. This record attendance and the large number of papers submitted attest to the rapidly increasing interest in wide bandgap semiconductors in both academic and industrial communities. Contained in the two volumes of these proceeding are 401 papers, 19 of which were invited. They document our present understanding of the many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical approaches, -- materials characterization, device processing and design, fabrication and characterization of electronic and optoelectronic devices, some with outstanding performance.
Book Synopsis Sponsorship of the International Conference on Silicon Carbide and Related Materials 1999 by :
Download or read book Sponsorship of the International Conference on Silicon Carbide and Related Materials 1999 written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The funds from this contract were for partial support of the International conference on Silicon Carbide and Related Materials 1999 (ICSCRM'99) which was held October 10-17, 1999 in Research Triangle Park, North Carolina. The principal objective of this interdisciplinary conference was to bring together the world's leading experts in the growth and characterization of wide bandgap materials, as well as experts involved in device related research and device fabrication and characterization. The conference promoted and produced cross-fertilization of knowledge and ideas among researchers from the many disciplines represented regarding the full development and deployment of wide bandgap materials and devices. The microelectronic and optoelectronic devices now being fabricated and envisioned from these materials, principally SiC and III-Nitrides, potentially possess the ultimate in properties in terms of power, frequency and temperature of operation and light emission. They are of considerable interest for the future establishment of the all-electronic Air Force.
Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Book Synopsis Silicon Carbide and Related Materials 2003 by : Roland Madar
Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by Trans Tech Publications Ltd. This book was released on 2004-06-15 with total page 1548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Book Synopsis SiC Materials and Devices by : Michael Shur
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Book Synopsis Silicon Carbide by : Wolfgang J. Choyke
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Book Synopsis SiC Power Materials by : Zhe Chuan Feng
Download or read book SiC Power Materials written by Zhe Chuan Feng and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.
Book Synopsis Silicon Carbide Power Devices by : B Jayant Baliga
Download or read book Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
