Signal Generation For Millimeter Wave And Thz Applications In Inp Dhbt And Inp On Bicmos Technologies

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Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies

Author : Muhammad Maruf Hossain
Publisher : Cuvillier Verlag
ISBN 13 : 3736983352
Total Pages : 136 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies by : Muhammad Maruf Hossain

Download or read book Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies written by Muhammad Maruf Hossain and published by Cuvillier Verlag. This book was released on 2016-10-27 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: A variety of commercial and defense applications are expected to have sub-terahertz (THz) and mm-wave integrated circuits in the near future. Silicon (Si) technologies partly meet the demands but are limited in their power handling capability. III-V technologies, in particular InP, offer higher output power but fall short of their Si counterparts if it comes to integration density and complexity. Thus, research on hetero-integration of Si with InP has gained increasing interest. This work focuses on MMIC signal sources as important building blocks that are based on FBH’s 0.8 μm InP-DHBT transferred-substrate (TS) process, offering an InP-DHBT as well as an InP-on-BiCMOS version. This process is unique and provides interesting possibilities to realize integrated circuits in the frequency range between 100 GHz and more than 300 GHz. First, fundamental sources at 96 GHz and 197 GHz are presented. They deliver +9 dBm and 0 dBm output power with 25% and 0.5% overall DC-to-RF efficiency, respectively. Furthermore, 162 GHz and 270 GHz push-push sources are demonstrated utilizing an InP-on-BiCMOS process, which achieve -4.5 dBm and -9.5 dBm output power. Subsequently, multiplier-based signal sources are demonstrated including a full G-band (140-220 GHz) frequency doubler, which delivers +8.2 dBm at 180 GHz and more than +5 dBm in the range 160-200 GHz. The doubler circuit exhibits a power efficiency of 16% in this frequency range. Also, the highest frequency is reached by a wideband 328 GHz quadrupler, with -7 dBm output power at 325 GHz and 0.5% DC-to-RF efficiency. The final part is devoted to hetero-integrated circuits and the necessary design considerations. Two 250 GHz and 330 GHz sources are demonstrated that deliver -1.6 dBm and -12 dBm output power, respectively. These are the first hetero-integrated signal sources in this frequency range reported so far.

Spectroscopic Applications of Terahertz Quantum-Cascade Lasers

Author : Tasmim Alam
Publisher : Cuvillier Verlag
ISBN 13 : 3736962975
Total Pages : 132 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Spectroscopic Applications of Terahertz Quantum-Cascade Lasers by : Tasmim Alam

Download or read book Spectroscopic Applications of Terahertz Quantum-Cascade Lasers written by Tasmim Alam and published by Cuvillier Verlag. This book was released on 2020-10-29 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum cascade lasers (QCLs) are attractive for high-resolution spectroscopy because they can provide high power and a narrow linewidth. They are particularly promising in the terahertz (THz) range since they can be used as local oscillators for heterodyne detection as well as transmitters for direct detection. However, THz QCL-based technologies are still under development and are limited by the lack of frequency tunability as well as the frequency and output power stability for free-running operation. In this dissertation, frequency tuning and linewidth of THz QCLs are studied in detail by using rotational spectroscopic features of molecular species. In molecular spectroscopy, the Doppler eff ect broadens the spectral lines of molecules in the gas phase at thermal equilibrium. Saturated absorption spectroscopy has been performed that allows for sub-Doppler resolution of the spectral features. One possible application is QCL frequency stabilization based on the Lamb dip. Since the tunability of the emission frequency is an essential requirement to use THz QCL for high-resolution spectroscopy, a new method has been developed that relies on near-infrared (NIR) optical excitation of the QCL rear-facet. A wide tuning range has been achieved by using this approach. The scheme is straightforward to implement, and the approach can be readily applied to a large class of THz QCLs. The frequency and output stability of the local oscillator has a direct impact on the performance and consistency of the heterodyne spectroscopy. A technique has been developed for a simultaneous stabilization of the frequency and output power by taking advantage of the frequency and power regulation by NIR excitation. The results presented in this thesis will enable the routine use of THz QCLs for spectroscopic applications in the near future.

Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes

Author : Pietro della Casa
Publisher : Cuvillier Verlag
ISBN 13 : 3736963971
Total Pages : 250 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes by : Pietro della Casa

Download or read book Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes written by Pietro della Casa and published by Cuvillier Verlag. This book was released on 2021-03-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination – particularly that due to oxygen – needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination. These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored. High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow “mesa” containing the active zone. This approach allows introducing lateral electrical and optical confinement, and – simultaneously – non-absorbing mirrors at the laser facets. Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.

Development and analysis of diode laser ns-MOPA systems for high peak power application

Author : Thi Nghiem Vu
Publisher : Cuvillier Verlag
ISBN 13 : 3736984804
Total Pages : 138 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Development and analysis of diode laser ns-MOPA systems for high peak power application by : Thi Nghiem Vu

Download or read book Development and analysis of diode laser ns-MOPA systems for high peak power application written by Thi Nghiem Vu and published by Cuvillier Verlag. This book was released on 2017-02-14 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work aims at designing and characterizing diode laser based master oscillator power amplifier (MOPA) systems, which are targeted to be implemented into micro light detection and ranging (LIDAR) or differential absorption LIDAR (DIAL) systems for water vapor and aerosol detections. These light sources operate in the ns-pulse regime at a repetition rate of 25 kHz, leading to a resolution in the meter range in an altitude of 6 km. The monolithic MOPA, where Master Oscillator (MO) and Power Amplifier (PA) are integrated on one single chip, operates at 1064 nm wavelength. A peak power of 16.3 W with a pulse width of 3 ns was obtained. A spectral linewidth of about 150 pm and a side mode suppression ratio (SMSR) of 30 dB was observed. A ratio of 9% between the amplified spontaneous emission (ASE) and the laser was estimated. These spectral properties fulfill the requirements for aerosol detection. The hybrid MOPA systems have separate chips for MO and PA. Different hybrid MOPA systems provide a stabilized wavelength at 1064 nm, a tunable wavelength around 975 nm and a dual wavelength around 964 nm. They therefore enable to detect a well-defined absorption line, scan over absorption line and switch between on/off line in DIAL applications, respectively. Their spectral linewidth is below 10 pm, limited by the resolution of the spectrum analyzer. An SMSR of more than 50 dB for the MO and of more than 37 dB for the whole MOPA was reached. A ratio between ASE and laser below 1% was estimated. These spectral properties meet the requirements for water vapor absorption lines detection at atmospheric condition. Diode laser based MOPA systems were therefore proven to be potential light sources for micro-pulse-LIDAR systems – the basis for a new generation of ultra-compact, low-cost systems.

A deep ultraviolet laser light source by frequency doubling of GaN based external cavity diode laser radiation

Author : Norman Ruhnke
Publisher : Cuvillier Verlag
ISBN 13 : 373696613X
Total Pages : 130 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis A deep ultraviolet laser light source by frequency doubling of GaN based external cavity diode laser radiation by : Norman Ruhnke

Download or read book A deep ultraviolet laser light source by frequency doubling of GaN based external cavity diode laser radiation written by Norman Ruhnke and published by Cuvillier Verlag. This book was released on 2022-05-13 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: A compact and portable laser light source emitting in the wavelength range between 210 nm and 230 nm would enable numerous applications outside of laboratory environments, such as sterilization and disinfection of medical equipment, water purification or gas and air analysis using absorption spectroscopy. Such a source is also highly attractive for the identification and quantification of proteins and biomolecules by means of laser-induced fluorescence or Raman spectroscopy. In this thesis, a novel concept to realize such a compact and portable laser light source with low power consumption and an emission around 222 nm is investigated. The developed concept is based on single-pass frequency doubling of a commercially available high-power GaN laser diode emitting in the blue spectral range. Due to the low frequency doubling conversion efficiencies in this wavelength range of about 10-4 W-1, a laser diode with high optical output power above 1 W is required as pump source. Moreover, it has to exhibit narrowband emission in the range of the acceptance bandwidth of the applied nonlinear BBO crystal. Since GaN-based high-power laser diodes typically show broad emission spectra of Δλ = 1…2 nm, stabilizing and narrowing their wavelength by using external wavelength-selective elements is investigated and presented for the first time. With the understanding for the novel concept gained in this work, a compact ultraviolet laser light source was realized. It has a power consumption of less than 10 W and is exceptionally robust due to its immoveable components. The demonstrated output power of 160 μW enables numerous industrial and everyday applications for which previous laser systems have been too complex and overly cost- and energy-intensive.

Analysis of Spatio-Temporal Phenomena in High-Brightness Diode Lasers using Numerical Simulations

Author : Anissa Zeghuzi
Publisher : Cuvillier Verlag
ISBN 13 : 3736962894
Total Pages : 176 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Analysis of Spatio-Temporal Phenomena in High-Brightness Diode Lasers using Numerical Simulations by : Anissa Zeghuzi

Download or read book Analysis of Spatio-Temporal Phenomena in High-Brightness Diode Lasers using Numerical Simulations written by Anissa Zeghuzi and published by Cuvillier Verlag. This book was released on 2020-10-22 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Broad-area lasers are edge-emitting semiconductor lasers with a wide lateral emission aperture. This feature enables high output powers but also diminishes the lateral beam quality and results in their inherently non-stationary behavior. Research in the area is driven by application, and the main objective is to increase the brightness, which includes both output power and lateral beam quality. To understand the underlying spatio-temporal phenomena and to apply this knowledge in order to reduce costs for brightness optimization, a self-consistent simulation tool taking all essential processes into account is vital. Firstly, in this work a quasi-three-dimensional opto-electronic and thermal model is presented that describes essential qualitative characteristics of real devices well. Time-dependent traveling-wave equations are utilized to characterize the inherently non-stationary optical fields, which are coupled to dynamic rate equations for the excess carriers in the active region. This model is extended by an injection-current-density model to accurately include lateral current spreading and spatial hole burning. Furthermore, a temperature model is presented that includes short-time local heating near the active region as well as the formation of a stationary temperature profile. Secondly, the reasons of brightness degradation, i.e. the origins of power saturation and the spatially modulated field profile, are investigated. And lastly, designs that mitigate those effects limiting the lateral brightness under pulsed and continuous-wave operation are discussed. Amongst those designs a novel “chessboard laser” is presented that utilizes longitudinal-lateral gain-loss modulation and an additional phase tailoring to obtain a very low far-field divergence.

AlN base layers for UV LEDs

Author : Sebastian Walde
Publisher : Cuvillier Verlag
ISBN 13 : 373696451X
Total Pages : 156 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis AlN base layers for UV LEDs by : Sebastian Walde

Download or read book AlN base layers for UV LEDs written by Sebastian Walde and published by Cuvillier Verlag. This book was released on 2021-06-22 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work aims at improving the quality of AlN base layers on sapphire substrates. The main issues for UV LEDs are still a limited internal quantum efficiency due to a high amount of threading dislocations along with a limited light extraction efficiency due to total internal reflection at the AlN/sapphire interface. Therefore, high-temperature annealing of AlN/sapphire layers and growth on nanopatterned sapphire substrates were comprehensively investigated. High-temperature annealing was applied to AlN layers of different strain and thickness grown by metalorganic vapour phase epitaxy (MOVPE). The threading dislocation density could be successfully reduced by more than one order of magnitude down to 6 × 108 cm-2. Wave optical simulations of UV LEDs on nanopatterned sapphire substrates (NPSS) were conducted and showed a potential increase in light extraction efficiency compared to a planar substrate. The optimized MOVPE growth process on sapphire nanopillars and sapphire nanoholes resulted in a fully coalesced and atomically smooth AlN surface. The threading dislocation density was reduced to 1 ×109 cm-2 for AlN on both nanopillars and nanoholes. UVC LEDs emitting at 265 nm wavelength were grown on top of the developed templates. Increased internal efficiency was obtained by reduced dislocation density and more efficient light extraction was achieved on NPSS in case of a transparent heterostructure and reflective contacts. Thus, the developed templates yield considerable improvement in light output compared to conventional templates.

Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers

Author : Thorben Kaul
Publisher : Cuvillier Verlag
ISBN 13 : 3736963963
Total Pages : 136 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers by : Thorben Kaul

Download or read book Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers written by Thorben Kaul and published by Cuvillier Verlag. This book was released on 2021-04-09 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents progress in the root-cause analysis of power saturation mechanisms in continuous wave (CW) driven GaAs-based high-power broad area diode lasers operated at 935 nm. Target is to increase efficiency at high optical CW powers by epitaxial design. The novel extreme triple asymmetric (ETAS) design was developed and patented within this work to equip diode lasers that use an extremely thin p-waveguide with a high modal gain. An iterative variation of diode lasers employing ETAS designs was used to experimentally clarify the impact of modal gain on the temperature dependence of internal differential quantum efficiency (IDQE) and optical loss. High modal gain leads to increased free carrier absorption from the active region. However, less power saturation is observed, which must then be attributed to an improved temperature sensitivity of the IDQE. The effect of longitudinal spatial hole burning (LSHB) leads to above average non-linear carrier loss at the back facet of the device. At high CW currents the junction temperature rises. Therefore, not only the asymmetry of the carrier profile increases but also the average carrier density in order to compensate for the decreased material gain and increased threshold gain. This carrier non-pinning effect above threshold is found in this work to enhance the impact of LSHB already at low currents, leading to rapid degradation of IDQE with temperature. This finding puts LSHB into a new context for CW-driven devices as it emphasizes the importance of low carrier densities at threshold. The carrier density was effectively reduced by applying the novel ETAS design. This enabled diode lasers to be realized that show minimized degradation of IDQE with temperature and therefore improved performance in CW operation.

Broad-Area Laser Bars for 1 kW-Emission

Author : Matthias M. Karow
Publisher : Cuvillier Verlag
ISBN 13 : 3736966261
Total Pages : 143 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Broad-Area Laser Bars for 1 kW-Emission by : Matthias M. Karow

Download or read book Broad-Area Laser Bars for 1 kW-Emission written by Matthias M. Karow and published by Cuvillier Verlag. This book was released on 2022-06-27 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: ndustrial laser systems for material processing applications rely on the availability of highly efficient, high-brightness diode lasers. GaAs-based broad-area laser bars play a vital role in such applications as pump sources for high-beam-quality solid-state lasers and, increasingly, as direct processing tools. This work studies 940 nm-laser bars emitting 1 kW optical power at room temperature, identifying those physical mechanisms that are currently limiting electrical-to-optical conversion efficiency as well as lateral beam quality. In the process, several diagnostic studies on bars with varied lateral-longitudinal design were carried out. The effects of technological measures for performance optimization were analyzed, yielding a new benchmark in efficiency and lateral divergence. The studies into altered resonator lengths of 4 and 6 mm as well as fill factors between 69 and 87 % successfully reduce both the voltage dropping across the device and power saturation at high currents, enabling 66 % efficiency at the operation point. Concrete measures how to reach efficiencies ≥70 % are presented thereafter, showing that doubling the efficiency value of the first 1 kW-demonstration in 2007 – amounting to 35 % – is in near reach. Investigation of the beam quality bases on a herein proposed and realized concept, in which the far field is resolved for each individual bar emitter. In this way, it is possible to determine how far-field profiles vary along the bar width and how much these variations affect the overall bar far-field. Further, such effects specific to bar structures can be separated into non-thermal and thermal influences. The effect of mechanical chip deformation (bar smile) as well as neighboring-emitter interaction has been investigated for the first time in active kW-class devices, yielding a lateral divergence as low as 8.8° at the operation point.

Design, simulation and analysis of laterally-longitudinally non-uniform edge-emitting GaAs-based diode lasers (Band 73)

Author : Jan-Philipp Koester
Publisher : Cuvillier Verlag
ISBN 13 : 3736968825
Total Pages : 171 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Design, simulation and analysis of laterally-longitudinally non-uniform edge-emitting GaAs-based diode lasers (Band 73) by : Jan-Philipp Koester

Download or read book Design, simulation and analysis of laterally-longitudinally non-uniform edge-emitting GaAs-based diode lasers (Band 73) written by Jan-Philipp Koester and published by Cuvillier Verlag. This book was released on 2023-09-19 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edge-emitting quantum-well diode lasers based on GaAs combine a high conversion efficiency, a wide range of emission wavelengths covering a span from 630 nm to 1180 nm, and the ability to achieve high output powers. The often used longitudinal-invariant Fabry-Pérot-type resonators are easy to design but often lead to functionality or performance limitations. In this work, the application of laterally-longitudinally non-uniform resonator configurations is explored as a way to reduce unwanted and performance-limiting effects. The investigations are carried out on existing and entirely newly developed laser designs using dedicated simulation tools. These include a sophisticated time-dependent laser simulator based on a traveling-wave model of the optical fields in the lateral-longitudinal plane and a Maxwell solver based on the eigenmode expansion method for the simulation of passive waveguides. Whenever possible, the simulation results are compared with experimental data. Based on this approach, three fundamentally different laser types are investigated: • Dual-wavelength lasers emitting two slightly detuned wavelengths around 784 nm out of a single aperture • Ridge-waveguide lasers with tapered waveguide and contact layouts that emit light of a wavelength of around 970 nm • Broad-area lasers with slightly tapered contact layouts emitting at 910 nm The results of this thesis underline the potential of lateral-longitudinal non-uniform laser designs to increase selected aspects of device performance, including beam quality, spectral stability, and output power.

Transceiver Technologies for Millimeter-Wave Beam Steering Applications (Band 71)

Author : Yi-Fan Tsao
Publisher : Cuvillier Verlag
ISBN 13 : 3736967020
Total Pages : 147 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Transceiver Technologies for Millimeter-Wave Beam Steering Applications (Band 71) by : Yi-Fan Tsao

Download or read book Transceiver Technologies for Millimeter-Wave Beam Steering Applications (Band 71) written by Yi-Fan Tsao and published by Cuvillier Verlag. This book was released on 2022-11-08 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past years, wireless communication systems have been rapidly advancing to meet the high data-rate requirements of various emerging applications. However, the existing transceivers have typically been demonstrated using CMOS-compatible technologies that deliver a relatively low equivalent isotropic radiated power in a small unit cell. Moreover, the particular device characteristics are limiting the linear region for operation. Therefore, the main focus of this dissertation is to present and discuss new design methods for transceivers to solve these issues. To reduce the complexity of the transceiver module for further phased-array scaling, a low-noise power amplifier design approach is designed using a 0.15-μm GaN-on-SiC high-electron mobility transistor technology (HEMT). Utilizing a traded off interstage matching topology between loss and bandwidth, the conversion loss induced by the matching network could be effectively reduced. A stacked-FET configuration was adopted to enhance the power handling of the RF switch. Further improvement on the isolation bandwidth was investigated using theoretical analysis on the intrinsic effect of the passive HEMTs. With the successful implementation of the RF front-end circuits, transceiver modules were integrated on Rogers RO3010 substrate. The planar dual exponentially tapered slot antenna phased-array system showed a compact size with simple biasing network compared to the conventional transceiver approach. The presented T/R module was characterized with an over-the-air test at a distance of 1 m, overcoming the free space path loss of 64 dB. It also shows a high flexibility for further integration with a larger number of array systems, which is very promising for future 5G communication systems.

State-of-the-Art of Millimeter-Wave Silicon Technology

Author : Jaco du Preez
Publisher :
ISBN 13 : 9783031146565
Total Pages : 0 pages
Book Rating : 4.1/5 (465 download)

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Book Synopsis State-of-the-Art of Millimeter-Wave Silicon Technology by : Jaco du Preez

Download or read book State-of-the-Art of Millimeter-Wave Silicon Technology written by Jaco du Preez and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines the critical differences between current and next-generation Si technologies (CMOS, BiCMOS and SiC) and technology platforms (e.g. system-on-chip) in mm-wave wireless applications. We provide a basic overview of the two technologies from a technical standpoint, followed by a review of the state-of-the-art of several key building blocks in wireless systems. The influences of system requirements on the choice of semiconductor technology are vital to understanding the merits of CMOS and BiCMOS devices - e.g., output power, battery life, adjacent channel interference, cost restrictions, and so forth. These requirements, in turn, affect component-level design and performance metrics of oscillators, mixers, power and low-noise amplifiers, as well as phase-locked loops and data converters. Finally, the book offers a peek into the next generation of wireless technologies such as THz -band systems and future 6G applications.

InP-based Devices and Circuits for High Performance Microwave/millimeter Wave Applications

Author :
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (632 download)

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Book Synopsis InP-based Devices and Circuits for High Performance Microwave/millimeter Wave Applications by :

Download or read book InP-based Devices and Circuits for High Performance Microwave/millimeter Wave Applications written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: InP-based (AlInAs/GaInAs) high election mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have demonstrated a substantial performance improvement over GaAs-based devices, HEMTS with extrinsic fT's over 300 GHz, fmax over 400 GHz, and amplifiers with extremely low noise figures and high associated gain (NF

Standing Wave Integrated Circuits for Power Generation, Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum

Author : Hossein Jalili
Publisher :
ISBN 13 : 9781658416443
Total Pages : pages
Book Rating : 4.4/5 (164 download)

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Book Synopsis Standing Wave Integrated Circuits for Power Generation, Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum by : Hossein Jalili

Download or read book Standing Wave Integrated Circuits for Power Generation, Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum written by Hossein Jalili and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The enormous potentials of millimeter wave (mm-wave) and terahertz (THz) frequency spectrum have sparked significant interest in breaking into this new frontier of technology. High-speed communication, imaging, spectroscopy and radar are just a few examples among many possible applications. Today, however, mm-wave and THz systems are mostly discrete, bulky and expensive, which significantly limits their accessibility and applications. Realization of integrated mm-wave/THz systems in low-cost and reliable silicon technologies can be a technological milestone, paving the way for tremendous opportunities both in high-tech market and academic research. This work is focused on tackling the major challenges of implementing mm-wave/THz integrated sources, including magnitude, bandwidth, radiation and beam steering of the source power. As we move to higher frequencies, the power that can be generated on chip continuously drops. Here, we have demonstrated a versatile method to maximize this power based on independent optimization of harmonic impedances. Scalable standing wave array structures are implemented based on efficient low-loss coupling schemes in order to further boost the produced power by increasing the number of contributing individual sources. Furthermore, we have presented a practical approach to maximizing radiation gain and consequently Equivalent Isotropic Radiated Power (EIRP) of the source by optimizing influential parameters of the radiation apparatus. Achieving wideband operation also becomes more challenging with increasing frequency. This is an important obstacle in our ability to take advantage of the uncongested and large available bandwidth at mm-wave/THz. We implemented standing wave oscillators and employed a varactor-less frequency tuning method to realize wideband operation. We considerably improved the bandwidth benchmark among state-of-the-art integrated radiator arrays in silicon technology. Furthermore, electronic beam steering is a crucial component of the modern wireless systems. However, realizing the necessary wide range of variable phase shift between sources is a difficult task at mm-wave/THz spectrum. Here, we have demonstrated a new phase shifting method based on combining standing and traveling waves and were able to achieve a record beam steering range among relevant published works to date. In this dissertation, we present the ideas, analysis, design methods and experimental results of four implemented prototype integrated circuits. First, a 230-GHz Voltage Controlled Oscillator (VCO) in a 65-nm CMOS technology is presented based on a coupled standing wave structure. This circuit is capable of providing high output power (3.4 dBm maximum) and wideband operation (8.3% frequency tuning range) simultaneously. Taking output power, bandwidth, power consumption and phase noise into account altogether, the circuit has a record performance figure-of-merit (FOM) compared to the state of the art. Then, a 0.34-THz 4-element scalable standing wave radiator array with 20.3 GHz (record bandwidth at the time of publication) and -10.5 dBm maximum radiated power is demonstrated, followed by a 0.34-THz wideband (15.1% frequency tuning range) and wide-angle (128° /53° range) 2D beam steering phased array, both in in 0.13μm SiGe BiCMOS. The phased array circuit has the largest bandwidth and widest steering range among integrated arrays above 300 GHz in silicon technology. Finally, a 0.46-THz 25-element scalable radiator array in a 65-nm CMOS is presented with high radiation gain through an optimized silicon lens set up. This coherent source delivers record EIRP of +19.3 dBm and 8.9% wide frequency tuning range, both largest values reported for integrated arrays above 400 GHz in silicon.

Interconnection development for InP-HBT terahertz circuits

Author : Dimitri Stoppel
Publisher : Cuvillier Verlag
ISBN 13 : 3736962045
Total Pages : 156 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Interconnection development for InP-HBT terahertz circuits by : Dimitri Stoppel

Download or read book Interconnection development for InP-HBT terahertz circuits written by Dimitri Stoppel and published by Cuvillier Verlag. This book was released on 2020-05-11 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: For frequencies above 300 GHz applications are still in the research state since commercially available systems are missing. This dissertation shows three key aspects in process development that are now part of a standard indium phosphide (InP) transferred-substrate process, paving the way for future terahertz projects and applications. The InP transferred-substrate process at Ferdinand-Braun-Institut (FBH) has proven to be a promising candidate for the respective semiconductor components. This particular process utilizes the wafer bonding technique, which allows transferring the active monolithic microwave integrated circuits (MMICs) onto a host substrate. Such host substrate can be either a passive substrate that is equipped with through-silicon vias (TSVs) or a BiCMOS wafer. Hetero-integrated approaches offer ideal conditions to fulfill the requirements of applications regarding complexity (BiCMOS) and large bandwidth (InP). Within this thesis, three topics are described in greater detail: benzocyclobutene (BCB) dry etch process development, nickel-chrome (NiCr) thin film resistor (TFRs) development and through-silicon vias implementation. Eventually, the newly developed plasma etch process has been successfully implemented into standard InP processing, with a fivefold increase in etch rate at maintained bias and anisotropy. Also, a method to suppress redeposition formation was shown. Successful circuit measurements with implemented NiCr resistors demonstrated the last step of TFR integration. A new approach with bottom contacted TFRs was successfully integrated. A laser-enabled TSV process was developed to serve as an effective and reliable way to circumvent parasitic parallel plate modes that occur at high operating frequency circuits.

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Author : Matthias Wietstruck
Publisher :
ISBN 13 : 9783961001965
Total Pages : 0 pages
Book Rating : 4.0/5 (19 download)

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Book Synopsis Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications by : Matthias Wietstruck

Download or read book Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications written by Matthias Wietstruck and published by . This book was released on 2023-11-30 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamentals of Terahertz Devices and Applications

Author : Dimitris Pavlidis
Publisher : John Wiley & Sons
ISBN 13 : 1119460719
Total Pages : 580 pages
Book Rating : 4.1/5 (194 download)

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Book Synopsis Fundamentals of Terahertz Devices and Applications by : Dimitris Pavlidis

Download or read book Fundamentals of Terahertz Devices and Applications written by Dimitris Pavlidis and published by John Wiley & Sons. This book was released on 2021-08-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: An authoritative and comprehensive guide to the devices and applications of Terahertz technology Terahertz (THz) technology relates to applications that span in frequency from a few hundred GHz to more than 1000 GHz. Fundamentals of Terahertz Devices and Applications offers a comprehensive review of the devices and applications of Terahertz technology. With contributions from a range of experts on the topic, this book contains in a single volume an inclusive review of THz devices for signal generation, detection and treatment. Fundamentals of Terahertz Devices and Applications offers an exploration and addresses key categories and aspects of Terahertz Technology such as: sources, detectors, transmission, electronic considerations and applications, optical (photonic) considerations and applications. Worked examplesbased on the contributors extensive experience highlight the chapter material presented. The text is designed for use by novices and professionals who want a better understanding of device operation and use, and is suitable for instructional purposes This important book: Offers the most relevant up-to-date research information and insight into the future developments in the technology Addresses a wide-range of categories and aspects of Terahertz technology Includes material to support courses on Terahertz Technology and more Contains illustrative worked examples Written for researchers, students, and professional engineers, Fundamentals of Terahertz Devices and Applications offers an in-depth exploration of the topic that is designed for both novices and professionals and can be adopted for instructional purposes.