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Schottky Barrier Diodes For Electron Beam Semiconductor Applications
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Book Synopsis Schottky Barrier Diodes for Electron Beam Semiconductor Applications by : Wieslaw W. Siekanowicz
Download or read book Schottky Barrier Diodes for Electron Beam Semiconductor Applications written by Wieslaw W. Siekanowicz and published by . This book was released on 1972 with total page 91 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experimental and theoretical studies show that the current-gain and frequency response of electron-beam-semiconductor Schottky barrier diodes are better than those of pn junctions. The lower gain of the latter devices is attributed to recombination losses in the p+ layer. High current gains (about 1500) were measured for silicon, gallium arsenide, and gallium arsenide phosphide Schottky diodes. Theoretical amplifier designs, based on measured current-gain characteristics, have shown that gallium arsenide phosphide does not provide significant improvements of gain linearity or efficiency over silicon. Gallium arsenide offers substantial increases of bandwidth over silicon and is less susceptible to deterioration resulting from temperature cycling and beam bombardment. Therefore, further development of gallium arsenide electron-beam-semiconductor targets is recommended. (Author).
Book Synopsis Metal-Semiconductor Schottky Barrier Junctions and Their Applications by : B.L. Sharma
Download or read book Metal-Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
Book Synopsis Aluminum Silicon Schottky Barriers for GEISHA Devices by : Hannis Woodson Thompson
Download or read book Aluminum Silicon Schottky Barriers for GEISHA Devices written by Hannis Woodson Thompson and published by . This book was released on 1973 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work is undertaken to investigate the use of Schottky Barrier diodes as semiconductor targets for GEISHA type devices. A secondary purpose was to evaluate Al2O3 as a passivating insulator for use with electron-beam semiconductor targets. Schottky barriers previously fabricated for semiconductor target (ST) applications have used SiO2 as an insulating/passivation layer. Since this layer may cause undesirable ST behavior under electron bombardment, the use of unpassivated structures and those using Al2O3 passivation is investigated. Details of device fabrication and evaluation are covered, barrier heights are evaluated and methods of measurement discussed, results of the measurement of current gain are given, dynamic testing is performed under electron beam energies from 5 KeV to 30 KeV, and methods used and results obtained are described. A study is made of the interaction of 10 KeV electron with the semiconductor target.
Book Synopsis Electrical Characterisation of Schottky Barrier Diodes Fabricated on GaAs by Electron Beam Metallisation by : Enoch Mpho Sithole
Download or read book Electrical Characterisation of Schottky Barrier Diodes Fabricated on GaAs by Electron Beam Metallisation written by Enoch Mpho Sithole and published by . This book was released on 2001 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Submillimeter Schottky Diodes with Electron Beam Lithography by : John B Langley (II.)
Download or read book Submillimeter Schottky Diodes with Electron Beam Lithography written by John B Langley (II.) and published by . This book was released on 1979 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt: A microprocessor based electron beam lithography system has been developed for production of Schottky barrier diodes with submicron geometric features. The electron beam lithography system is described along with details of the fabrication procedure. Complete logic diagrams and listings of the microprocessor operating software are included. (Author).
Book Synopsis III-V Nitride Semiconductors by : Edward T. Yu
Download or read book III-V Nitride Semiconductors written by Edward T. Yu and published by CRC Press. This book was released on 2002-09-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Book Synopsis Fabrication of Electron-Bombarded Semiconductor (EBS) Diodes by : Barry E. Burke
Download or read book Fabrication of Electron-Bombarded Semiconductor (EBS) Diodes written by Barry E. Burke and published by . This book was released on 1974 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report is a complete description of the design criteria and the processes used for the fabrication of electron-bombarded semiconductor diodes for Class C operation at 2.1 GHz and lower frequencies. The devices are planar p-n junction diodes fabricated on n/n(+) epitaxial material with a deep diffused guard ring surrounding the thin junction which the electron beam penetrates. Leakage currents are sufficiently low so that thermal runaway does not occur until the device temperature exceeds 350C. It is demonstrated that a Schottky barrier is not a good choice for these large area power devices due to higher leakage current, and that a p-n junction is to be preferred. However, a layer of metal was needed to reduce the net sheet resistance of the thin p+ junction and a thin (approximately 300A) sputtered film of molybdenum was shown to be a good choice in this case. The use of Mo-Au metalization proved to be a simple and reliable system for these devices. (Modified author abstract).
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 1572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analysis of Physical Parameters in Electron-Beam-Irradiated Semiconductor Diodes by : George A. Haas
Download or read book Analysis of Physical Parameters in Electron-Beam-Irradiated Semiconductor Diodes written by George A. Haas and published by . This book was released on 1972 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: The basic interaction theory of parameters such as thickness, impurity density, area, and external supply voltage required for various power-frequency applications is discussed for multiple electron-beam-irradiated semiconductor diodes connected in series. Two general approaches are outlined for use in CW class-B applications: (1) a minimum-thickness approach for reducing the transit-time limitations for a tuned-output high-frequency type of operation, and (2) a minimum-area approach for reducing the diode capacitance, as is desired for wide-bandwidth applications. Guidelines are also provided for changing the design conditions by altering constraints such as maximum allowed electric field, minimum allowed electric field, and heat dissipation. The power-frequency capabilities of the device are discussed in terms of present state-of-the-art fabrication limitations in controlling thickness, electromigration of the Al overlayer, uniformity of the electron beam, and electron-hole generation rate. (Modified author abstract).
Book Synopsis Semiconducting Devices by : A. H. Agajanian
Download or read book Semiconducting Devices written by A. H. Agajanian and published by Ifi/Plenum. This book was released on 1976 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Capacitance E-Beam Fabricated Beam-Lead Schottky Barrier Diodes by : G. T. Wrixon
Download or read book Low Capacitance E-Beam Fabricated Beam-Lead Schottky Barrier Diodes written by G. T. Wrixon and published by . This book was released on 1984 with total page 39 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the final report in the series describing the work performed under contract No. DAJA37-81-C-0261, the object of which is to develop a process capable of fabricating low-parasitic high performance beam diodes. The diode chips use a unique physical structure which maximises overall strength and minimises the structural capacitance. In this report we present the full process which has been developed and we describe the evaluation devices which have been produced. Keywords include: Beam Lead Diodes, Schottky Barrier Diodes, Millimeter Circuits, and Low Noise Receivers.
Book Synopsis Optimization of noise and cutoff frequency of schottky barrier diodes for use in sub-millimeter wavelengths by : Robert J. Mattauch
Download or read book Optimization of noise and cutoff frequency of schottky barrier diodes for use in sub-millimeter wavelengths written by Robert J. Mattauch and published by . This book was released on 1985 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976-03 with total page 938 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Finite Element Analysis and Electron Beam Lithographic Fabrication of Gallium Arsenide Schottky Barrier Diodes with Sub-micron Features by : J. B. Langley
Download or read book Finite Element Analysis and Electron Beam Lithographic Fabrication of Gallium Arsenide Schottky Barrier Diodes with Sub-micron Features written by J. B. Langley and published by . This book was released on 1980 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization in Compound Semiconductor Processing by : Gary E. McGuire
Download or read book Characterization in Compound Semiconductor Processing written by Gary E. McGuire and published by Momentum Press. This book was released on 2010-01-01 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deposition to dopant introduction. This book reviews the common classes of compound semiconductors, their physical, optical and electrical properties and the various types of methods used for characterizing them when analyzing for defects and application problems. The book features: -- Characterization of III-V Thin Films for Electronic and Optical applications -- Characterization of Dielectric Insulating Film layers -- A Special case study on Deep Level Transient Spectroscopy on GaAs -- Concise summaries of major characterization technologies for compound semiconductor materials, including Auger Electron Spectroscopy, Ballistic Electron Emission Microscopy, Energy-Dispersive X-Ray Spectroscopy, Neutron Activation Analysis and Raman Spectroscopy
Book Synopsis Microcircuit Reliability Bibliography by :
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1985 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
