Resistance Switching Mechanism In Tio2

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Resistance Switching Mechanism in TiO2

Author : Seong Geon Park
Publisher : Stanford University
ISBN 13 :
Total Pages : 131 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Resistance Switching Mechanism in TiO2 by : Seong Geon Park

Download or read book Resistance Switching Mechanism in TiO2 written by Seong Geon Park and published by Stanford University. This book was released on 2011 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Resistive Random Access Memory (ReRAM) has attracted significant attention recently, as it is now considered as the promising candidate for the next generation of non-volatile memory device, due to its high density, low operating power, fast switching speed, and compatibility with conventional CMOS process. Among many resistance switching materials, TiO2 has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking in-depth understanding. It has been proposed that the resistance switching is strongly coupled with the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many experiments have been done to address the switching mechanism during the last decade, it is hard to figure out what happens at microscopic level. Therefore, systematic interpretation about the microscopic details of the role of oxygen vacancies in the formation of a conductive filament is essential. To address the conduction and the resistance switching mechanism, the effect of oxygen vacancies on the electronic structures in TiO2 has been investigated using first principles calculations based on density functional theory. In this dissertation, we report "ON"-state (Low Resistance State) conduction mechanism of rutile TiO2 including oxygen vacancies, and then the transition from "ON" to "OFF"-state (High Resistance State) is investigated. Although it is known that TiO2 exhibits n-type semiconducting property with extra electrons generated by the formation of oxygen vacancies, "ON" and "OFF"-state conductivity during resistance switching cannot be explained by isolated single oxygen vacancy. We calculated electronic characteristics such as density of states, electron localization function, band decomposed charge density distribution, and energy band structure, and show the influence of oxygen vacancy configurations on these properties and on the resistance change. Oxygen vacancy ordering and diffusion of either oxygen vacancy or hydrogen impurities have a significant impact on both the formation of the conductive filament and the transition from "ON" to "OFF"-state. Results from this study indicate that the "ON"-state conduction and resistance switching model that can be ascribed to the formation and rupture of conductive filament consisting of oxygen vacancy-ordered structure.

Resistance Switching Mechanism in TiO2

Author : Seong Geon Park
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (744 download)

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Book Synopsis Resistance Switching Mechanism in TiO2 by : Seong Geon Park

Download or read book Resistance Switching Mechanism in TiO2 written by Seong Geon Park and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Resistive Random Access Memory (ReRAM) has attracted significant attention recently, as it is now considered as the promising candidate for the next generation of non-volatile memory device, due to its high density, low operating power, fast switching speed, and compatibility with conventional CMOS process. Among many resistance switching materials, TiO2 has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking in-depth understanding. It has been proposed that the resistance switching is strongly coupled with the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many experiments have been done to address the switching mechanism during the last decade, it is hard to figure out what happens at microscopic level. Therefore, systematic interpretation about the microscopic details of the role of oxygen vacancies in the formation of a conductive filament is essential. To address the conduction and the resistance switching mechanism, the effect of oxygen vacancies on the electronic structures in TiO2 has been investigated using first principles calculations based on density functional theory. In this dissertation, we report "ON"--State (Low Resistance State) conduction mechanism of rutile TiO2 including oxygen vacancies, and then the transition from "ON" to "OFF"-state (High Resistance State) is investigated. Although it is known that TiO2 exhibits n-type semiconducting property with extra electrons generated by the formation of oxygen vacancies, "ON" and "OFF"-state conductivity during resistance switching cannot be explained by isolated single oxygen vacancy. We calculated electronic characteristics such as density of states, electron localization function, band decomposed charge density distribution, and energy band structure, and show the influence of oxygen vacancy configurations on these properties and on the resistance change. Oxygen vacancy ordering and diffusion of either oxygen vacancy or hydrogen impurities have a significant impact on both the formation of the conductive filament and the transition from "ON" to "OFF"-state. Results from this study indicate that the "ON"-state conduction and resistance switching model that can be ascribed to the formation and rupture of conductive filament consisting of oxygen vacancy-ordered structure.

Resistive Switching in Pt, TiO2, Pt

Author : Doo Seok Jeong
Publisher : Forschungszentrum Jülich
ISBN 13 : 3893365796
Total Pages : 153 pages
Book Rating : 4.8/5 (933 download)

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Book Synopsis Resistive Switching in Pt, TiO2, Pt by : Doo Seok Jeong

Download or read book Resistive Switching in Pt, TiO2, Pt written by Doo Seok Jeong and published by Forschungszentrum Jülich. This book was released on 2009 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Resistive Switching in TiO2 Thin Films

Author : Lin Yang
Publisher : Forschungszentrum Jülich
ISBN 13 : 3893367071
Total Pages : 141 pages
Book Rating : 4.8/5 (933 download)

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Book Synopsis Resistive Switching in TiO2 Thin Films by : Lin Yang

Download or read book Resistive Switching in TiO2 Thin Films written by Lin Yang and published by Forschungszentrum Jülich. This book was released on 2011 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Thin Film Metal-Oxides

Author : Shriram Ramanathan
Publisher : Springer Science & Business Media
ISBN 13 : 1441906649
Total Pages : 344 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Thin Film Metal-Oxides by : Shriram Ramanathan

Download or read book Thin Film Metal-Oxides written by Shriram Ramanathan and published by Springer Science & Business Media. This book was released on 2009-12-03 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.

Resistive Switching

Author : Daniele Ielmini
Publisher : John Wiley & Sons
ISBN 13 : 3527680942
Total Pages : 784 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Resistive Switching by : Daniele Ielmini

Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-28 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Investigation of Electroforming Characteristics of TiO2 Based Resistance Switching Devices

Author : Mohammad N. Noman
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (144 download)

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Book Synopsis Investigation of Electroforming Characteristics of TiO2 Based Resistance Switching Devices by : Mohammad N. Noman

Download or read book Investigation of Electroforming Characteristics of TiO2 Based Resistance Switching Devices written by Mohammad N. Noman and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Author : Jennifer Rupp
Publisher : Springer Nature
ISBN 13 : 3030424243
Total Pages : 386 pages
Book Rating : 4.0/5 (34 download)

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Book Synopsis Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations by : Jennifer Rupp

Download or read book Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations written by Jennifer Rupp and published by Springer Nature. This book was released on 2021-10-15 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Nanoelectronics and Information Technology

Author : Rainer Waser
Publisher : Wiley-VCH
ISBN 13 : 9783527403639
Total Pages : 0 pages
Book Rating : 4.4/5 (36 download)

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Book Synopsis Nanoelectronics and Information Technology by : Rainer Waser

Download or read book Nanoelectronics and Information Technology written by Rainer Waser and published by Wiley-VCH. This book was released on 2003-04-09 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing an introduction to electronic materials and device concepts for the major areas of current and future information technology, the value of this book lies in its focus on the underlying principles. Illustrated by contemporary examples, these basic principles will hold, despite the rapid developments in this field, especially emphasizing nanoelectronics. There is hardly any field where the links between basic science and application are tighter than in nanoelectronics & information technology. As an example, the design of resonant tunneling transistors, single electron devices or molecular electronic structures is simply inconceivable without delving deep into quantum mechanics. This textbook is primarily aimed at students of physics, electrical engineering and information technology, as well as material science in their 3rd year and higher. It is equally of interest to professionals wanting a broader overview of this hot topic. "Nanoelectronics and Information Technology" by Rainer Waser and his colleagues is an outstanding compendium of information about an exciting new field. Owing to its high quality and complete coverage of the many topics in this area, this well referenced book will have a long and very useful life as a primary text for students experienced and new in nanoelectronics. It is a very impressive book." (Richard Siegel)

Integration of Resistive Switching Devices in Crossbar Structures

Author : Christian Nauenheim
Publisher : Forschungszentrum Jülich
ISBN 13 : 3893366369
Total Pages : 159 pages
Book Rating : 4.8/5 (933 download)

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Book Synopsis Integration of Resistive Switching Devices in Crossbar Structures by : Christian Nauenheim

Download or read book Integration of Resistive Switching Devices in Crossbar Structures written by Christian Nauenheim and published by Forschungszentrum Jülich. This book was released on 2010 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Titanium Dioxide (TiO2) and Its Applications

Author : Francesco Parrino
Publisher : Elsevier
ISBN 13 : 0128204346
Total Pages : 735 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis Titanium Dioxide (TiO2) and Its Applications by : Francesco Parrino

Download or read book Titanium Dioxide (TiO2) and Its Applications written by Francesco Parrino and published by Elsevier. This book was released on 2020-11-29 with total page 735 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scientific interest in TiO2-based materials has exponentially grown in the last few decades. Titanium Dioxide (TiO2) and Its Applications introduces the main physicochemical properties of TiO2 which are the basis of its applications in various fields. While the basic principles of the TiO2 properties have been the subject of various previous publications, this book is mainly devoted to TiO2 applications. The book includes contributions written by experts from a wide range of disciplines in order to address titanium dioxide's utilization in energy, consumer, materials, devices, and catalytic applications. The various applications identified include: photocatalysis, catalysis, optics, electronics, energy storage and production, ceramics, pigments, cosmetics, sensors, and heat transfer. Titanium Dioxide (TiO2) and Its Applications is suitable for a wide readership in the disciplines of materials science, chemistry, and engineering in both academia and industry. Includes a wide range of current and emerging applications of titanium dioxide in the fields of energy, consumer applications, materials, and devices Provides a brief overview of titanium dioxide and its properties, as well as techniques to design, deposit, and study the material Discusses the relevant properties, preparation methods, and other apposite considerations in each application-focused chapter

Memristor Networks

Author : Andrew Adamatzky
Publisher : Springer Science & Business Media
ISBN 13 : 3319026305
Total Pages : 716 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Memristor Networks by : Andrew Adamatzky

Download or read book Memristor Networks written by Andrew Adamatzky and published by Springer Science & Business Media. This book was released on 2013-12-18 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using memristors one can achieve circuit functionalities that are not possible to establish with resistors, capacitors and inductors, therefore the memristor is of great pragmatic usefulness. Potential unique applications of memristors are in spintronic devices, ultra-dense information storage, neuromorphic circuits and programmable electronics. Memristor Networks focuses on the design, fabrication, modelling of and implementation of computation in spatially extended discrete media with many memristors. Top experts in computer science, mathematics, electronics, physics and computer engineering present foundations of the memristor theory and applications, demonstrate how to design neuromorphic network architectures based on memristor assembles, analyse varieties of the dynamic behaviour of memristive networks and show how to realise computing devices from memristors. All aspects of memristor networks are presented in detail, in a fully accessible style. An indispensable source of information and an inspiring reference text, Memristor Networks is an invaluable resource for future generations of computer scientists, mathematicians, physicists and engineers.

Memristors and Memristive Systems

Author : Ronald Tetzlaff
Publisher : Springer Science & Business Media
ISBN 13 : 1461490685
Total Pages : 409 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Memristors and Memristive Systems by : Ronald Tetzlaff

Download or read book Memristors and Memristive Systems written by Ronald Tetzlaff and published by Springer Science & Business Media. This book was released on 2013-12-11 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of current research on memristors, memcapacitors and, meminductors. In addition to an historical overview of the research in this area, coverage includes the theory behind memristive circuits, as well as memcapacitance, and meminductance. Details are shown for recent applications of memristors for resistive random access memories, neuromorphic systems and hybrid CMOS/memristor circuits. Methods for the simulation of memristors are demonstrated and an introduction to neuromorphic modeling is provided.

Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications

Author : Mohammad Karbalaei Akbari
Publisher : CRC Press
ISBN 13 : 1000072460
Total Pages : 341 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications by : Mohammad Karbalaei Akbari

Download or read book Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications written by Mohammad Karbalaei Akbari and published by CRC Press. This book was released on 2020-07-30 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering perspective on both the scientific and engineering aspects of 2D semiconductors, Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications discusses how to successfully engineer 2D materials for practical applications. It also covers several novel topics regarding 2D semiconductors which have not yet been discussed in any other publications. Features: Provides comprehensive information and data about wafer-scale deposition of 2D semiconductors, ranging from scientific discussions up to the planning of experiments and reliability testing of the fabricated samples Precisely discusses wafer-scale ALD and CVD of 2D semiconductors and investigates various aspects of deposition techniques Covers the new group of 2D materials synthesized from surface oxide of liquid metals and also explains the device fabrication and post-treatment of these 2D nanostructures Addresses a wide range of scientific and practical applications of 2D semiconductors and electronic and optoelectronic devices based on these nanostructures Offers novel coverage of 2D heterostructures and heterointerfaces and provides practical information about fabrication and application of these heterostructures Introduces the latest advancement in fabrication of novel memristors, artificial synapses and sensorimotor devices based on 2D semiconductors This work offers practical information valuable for engineering applications that will appeal to researchers, academics, and scientists working with and interested in developing an array of semiconductor electronic devices.

Nano-Semiconductors

Author : Krzysztof Iniewski
Publisher : CRC Press
ISBN 13 : 1351833359
Total Pages : 602 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Nano-Semiconductors by : Krzysztof Iniewski

Download or read book Nano-Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

Emerging Nanoelectronic Devices

Author : An Chen
Publisher : John Wiley & Sons
ISBN 13 : 1118447743
Total Pages : 570 pages
Book Rating : 4.1/5 (184 download)

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Book Synopsis Emerging Nanoelectronic Devices by : An Chen

Download or read book Emerging Nanoelectronic Devices written by An Chen and published by John Wiley & Sons. This book was released on 2015-01-27 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.

Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices

Author : Joao B. Sousa
Publisher : Elsevier
ISBN 13 : 0323460976
Total Pages : 484 pages
Book Rating : 4.3/5 (234 download)

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Book Synopsis Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices by : Joao B. Sousa

Download or read book Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices written by Joao B. Sousa and published by Elsevier. This book was released on 2021-03-26 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices offers a pragmatic view on transport phenomena for micro- and nanoscale materials and devices, both as a research tool and as a means to implant new functions in materials. Chapters emphasize transport properties (TP) as a research tool at the micro/nano level and give an experimental view on underlying techniques. The relevance of TP is highlighted through the interplay between a micro/nanocarrier's characteristics and media characteristics: long/short-range order and disorder excitations, couplings, and in energy conversions. Later sections contain case studies on the role of transport properties in functional nanomaterials. This includes transport in thin films and nanostructures, from nanogranular films, to graphene and 2D semiconductors and spintronics, and from read heads, MRAMs and sensors, to nano-oscillators and energy conversion, from figures of merit, micro-coolers and micro-heaters, to spincaloritronics. Presents a pragmatic description of electrical transport phenomena in micro- and nanoscale materials and devices from an experimental viewpoint Provides an in-depth overview of the experimental techniques available to measure transport phenomena in micro- and nanoscale materials Features case studies to illustrate how each technique works Highlights emerging areas of interest in micro- and nanomaterial transport phenomena, including spintronics