Research On The Radiation Effects And Compact Model Of Sige Hbt

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Research on the Radiation Effects and Compact Model of SiGe HBT

Author : Yabin Sun
Publisher : Springer
ISBN 13 : 9811046123
Total Pages : 187 pages
Book Rating : 4.8/5 (11 download)

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Book Synopsis Research on the Radiation Effects and Compact Model of SiGe HBT by : Yabin Sun

Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

Parameter Extraction and Complex Nonlinear Transistor Models

Author : Gunter Kompa
Publisher : Artech House
ISBN 13 : 1630817457
Total Pages : 610 pages
Book Rating : 4.6/5 (38 download)

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Book Synopsis Parameter Extraction and Complex Nonlinear Transistor Models by : Gunter Kompa

Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.

Extreme Environment Electronics

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 143987431X
Total Pages : 1041 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Extreme Environment Electronics by : John D. Cressler

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Silicon-germanium Heterojunction Bipolar Transistors

Author : John D. Cressler
Publisher : Artech House
ISBN 13 : 9781580535991
Total Pages : 592 pages
Book Rating : 4.5/5 (359 download)

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Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler

Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066919
Total Pages : 472 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Silicon Heterostructure Devices by : John D. Cressler

Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Millimeter-Wave Integrated Circuits

Author : Mladen Božanić
Publisher : Springer Nature
ISBN 13 : 3030443981
Total Pages : 259 pages
Book Rating : 4.0/5 (34 download)

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Book Synopsis Millimeter-Wave Integrated Circuits by : Mladen Božanić

Download or read book Millimeter-Wave Integrated Circuits written by Mladen Božanić and published by Springer Nature. This book was released on 2020-03-16 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design. Each chapter focuses on a specific research challenge related to either small form factors or higher operating frequencies. The book first examines nanodevice scaling and the emerging electronic design automation tools that can be used in millimeter-wave research, as well as the singular challenges of combining deep-submicron and millimeter-wave design. It also demonstrates the importance of considering, in the millimeter-wave context, system-level design leading to differing packaging options. Further, it presents integrated circuit design methodologies for all major transceiver blocks typically employed at millimeter-wave frequencies, as these methodologies are normally fundamentally different from the traditional design methodologies used in analogue and lower-frequency electronics. Lastly, the book discusses the methodologies of millimeter-wave research and design for extreme or harsh environments, rebooting electronics, the additional opportunities for terahertz research, and the main differences between the approaches taken in millimeter-wave research and terahertz research.

Fabrication of SiGe HBT BiCMOS Technology

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066897
Total Pages : 258 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Fabrication of SiGe HBT BiCMOS Technology by : John D. Cressler

Download or read book Fabrication of SiGe HBT BiCMOS Technology written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

Author : D. Harame
Publisher : The Electrochemical Society
ISBN 13 : 1566778255
Total Pages : 1066 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices by : D. Harame

Download or read book SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices written by D. Harame and published by The Electrochemical Society. This book was released on 2010-10 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

SiGe Heterojunction Bipolar Transistors

Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Layout-aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics

Author : Jeffrey Scott Kauppila
Publisher :
ISBN 13 :
Total Pages : 207 pages
Book Rating : 4.:/5 (97 download)

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Book Synopsis Layout-aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics by : Jeffrey Scott Kauppila

Download or read book Layout-aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics written by Jeffrey Scott Kauppila and published by . This book was released on 2015 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Measurement and Modeling of Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834762
Total Pages : 189 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Measurement and Modeling of Silicon Heterostructure Devices by : John D. Cressler

Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Silicon Heterostructure Handbook

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420026585
Total Pages : 1248 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Silicon Heterostructure Handbook by : John D. Cressler

Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity

Author : Cor L. Claeys
Publisher : The Electrochemical Society
ISBN 13 : 9781566771030
Total Pages : 462 pages
Book Rating : 4.7/5 (71 download)

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Book Synopsis Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity by : Cor L. Claeys

Download or read book Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1995 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

SiGe, GaAs, and InP Heterojunction Bipolar Transistors

Author : Jiann S. Yuan
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 496 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis SiGe, GaAs, and InP Heterojunction Bipolar Transistors by : Jiann S. Yuan

Download or read book SiGe, GaAs, and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.

SiGe-based Re-engineering of Electronic Warfare Subsystems

Author : Wynand Lambrechts
Publisher : Springer
ISBN 13 : 3319474030
Total Pages : 343 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis SiGe-based Re-engineering of Electronic Warfare Subsystems by : Wynand Lambrechts

Download or read book SiGe-based Re-engineering of Electronic Warfare Subsystems written by Wynand Lambrechts and published by Springer. This book was released on 2016-10-19 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers a thorough understanding of the applicability of new-generation silicon-germanium (SiGe) electronic subsystems for electronic warfare and defensive countermeasures in military contexts. It explains in detail the theoretical and technical background, and addresses all aspects of the integration of SiGe as an enabling technology for maritime, land, and airborne / spaceborne electronic warfare, including research, design, development, and implementation. The coverage is supported by mathematical derivations, informative illustrations, practical examples, and case studies. While SiGe technology provides speed, performance, and price advantages in many markets, to date only limited information has been available on its use in electronic warfare systems, especially in developing nations. Addressing that need, this book offers essential engineering guidelines that especially focus on the speed and reliability of current-generation SiGe circuits and highlight emerging innovations that help to ensure the sustainable long-term integration of SiGe into electronic warfare systems.

Radiation Effects in Semiconductors

Author : Krzysztof Iniewski
Publisher : CRC Press
ISBN 13 : 1439826951
Total Pages : 432 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Radiation Effects in Semiconductors by : Krzysztof Iniewski

Download or read book Radiation Effects in Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices

Author : Ronald D Schrimpf
Publisher : World Scientific
ISBN 13 : 9814482153
Total Pages : 349 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices by : Ronald D Schrimpf

Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf and published by World Scientific. This book was released on 2004-07-29 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.