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Reliability Characterization Of Advanced Oxynitride Gate Dielectrics For Ulsi Mosfet Application
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Book Synopsis Reliability characterization of advanced oxynitride gate dielectrics for ULSI MOSFET application by : Byoung Woon Min
Download or read book Reliability characterization of advanced oxynitride gate dielectrics for ULSI MOSFET application written by Byoung Woon Min and published by . This book was released on 1998 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2004 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gate Dielectrics and MOS ULSIs by : Takashi Hori
Download or read book Gate Dielectrics and MOS ULSIs written by Takashi Hori and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.
Book Synopsis Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs by : Jinwoo Kim
Download or read book Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs written by Jinwoo Kim and published by . This book was released on 2011 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced oxynitride and silicon nitride gate dielectrics for ULSI CMOS technology by : Seung-chul Song
Download or read book Advanced oxynitride and silicon nitride gate dielectrics for ULSI CMOS technology written by Seung-chul Song and published by . This book was released on 1999 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microelectronic Manufacturing Yield, Reliability, and Failure Analysis by :
Download or read book Microelectronic Manufacturing Yield, Reliability, and Failure Analysis written by and published by . This book was released on 1995 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Book Synopsis Characterization and Metrology for ULSI Technology, 2000 by : David G. Seiler
Download or read book Characterization and Metrology for ULSI Technology, 2000 written by David G. Seiler and published by . This book was released on 2001 with total page 734 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Rapid Thermal and Other Short-time Processing Technologies by : Fred Roozeboom
Download or read book Rapid Thermal and Other Short-time Processing Technologies written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2000 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.
Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Book Synopsis IBM Journal of Research and Development by :
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 2002 with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1997 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advances in Rapid Thermal Processing by : Fred Roozeboom
Download or read book Advances in Rapid Thermal Processing written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 1999 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dielectric Films for Advanced Microelectronics by : Mikhail Baklanov
Download or read book Dielectric Films for Advanced Microelectronics written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2007-04-04 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Book Synopsis Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications by : F. Roozeboom
Download or read book Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications written by F. Roozeboom and published by The Electrochemical Society. This book was released on 2011-04-25 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions covers emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics : high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Book Synopsis Silicon-on-Insulator Technology: Materials to VLSI by : J.-P. Colinge
Download or read book Silicon-on-Insulator Technology: Materials to VLSI written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2004-02-29 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.
