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Realisation Et Caracterisation De Transistors Hemts Gan Pour Des Applications Dans Le Domaine Millimetrique
Download Realisation Et Caracterisation De Transistors Hemts Gan Pour Des Applications Dans Le Domaine Millimetrique full books in PDF, epub, and Kindle. Read online Realisation Et Caracterisation De Transistors Hemts Gan Pour Des Applications Dans Le Domaine Millimetrique ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Semiconductor TeraHertz Technology by : Guillermo Carpintero
Download or read book Semiconductor TeraHertz Technology written by Guillermo Carpintero and published by John Wiley & Sons. This book was released on 2015-07-14 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap". This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation comprehensively and systematically covers semiconductor-based room temperature operating sources such as photomixers, THz antennas, radiation concepts and THz propagation as well as room-temperature operating THz detectors. The second part of the book focuses on applications such as the latest photonic and electronic THz systems as well as emerging THz technologies including: whispering gallery resonators, liquid crystals, metamaterials and graphene-based devices. This book will provide support for practicing researchers and professionals and will be an indispensable reference to graduate students in the field of THz technology. Key features: Includes crucial theoretical background sections to photomixers, photoconductive switches and electronic THz generation & detection. Provides an extensive overview of semiconductor-based THz sources and applications. Discusses vital technologies for affordable THz applications. Supports teaching and studying increasingly popular courses on semiconductor THz technology.
Book Synopsis 2021 19th IEEE International New Circuits and Systems Conference (NEWCAS) by : IEEE Staff
Download or read book 2021 19th IEEE International New Circuits and Systems Conference (NEWCAS) written by IEEE Staff and published by . This book was released on 2021-06-13 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics include, but are not limited to Analog mixed signal circuits Biomedical circuits and systems CAD and design tools Communication circuits and systems Test and verification RF & microwave circuits Computer architecture and memory Digital circuits Digital signal processing Imaging and image sensors Low power low voltage designs Embedded systems Energy harvesting circuits Sensory circuits and systems Neuromorphic circuits & systems Technology Trends
Book Synopsis Silicon Systems for Wireless LAN by : Zoran Stamenkovic
Download or read book Silicon Systems for Wireless LAN written by Zoran Stamenkovic and published by World Scientific Publishing (Uk)Limited. This book was released on 2020-09-14 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today's integrated silicon circuits and systems for wireless communications are of a huge complexity. This unique compendium covers all the steps (from the system-level to the transistor-level) necessary to design, model, verify, implement, and test a silicon system. It bridges the gap between the system-world and the transistor-world (between communication, system, circuit, device, and test engineers). It is extremely important nowadays (and will be more important in the future) for communication, system, and circuit engineers to understand the physical implications of system and circuit solutions based on hardware/software co-design as well as for device and test engineers to cope with the system and circuit requirements in terms of power, speed, and data throughput.
Book Synopsis 2021 20th International Workshop on Junction Technology (IWJT) by : IEEE Staff
Download or read book 2021 20th International Workshop on Junction Technology (IWJT) written by IEEE Staff and published by . This book was released on 2021-06-10 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: IWJT is an open forum focused on the needs and interests of the community on junction formation technology in semiconductors In previous IWJTs, a number of eminent and experienced scientists and engineers from Asia, America and Europe presented their latest results on junction technology The workshop will provide a good opportunity for researchers and engineers to present their latest research results, and exchange ideas with leading scientists
Author :Blaise Ravelo Publisher :Institution of Engineering and Technology ISBN 13 :1785616404 Total Pages :374 pages Book Rating :4.7/5 (856 download)
Book Synopsis Negative Group Delay Devices by : Blaise Ravelo
Download or read book Negative Group Delay Devices written by Blaise Ravelo and published by Institution of Engineering and Technology. This book was released on 2018-12-04 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Negative Group Delay Devices: From concepts to applications introduces the theoretical concept, analysis, design methodology and implementation of negative group delay (NGD). The NGD concept is a recent topic in electrical and electronic engineering research based on an unconventional function; the generation of an output signal seemingly in time-advance of the input signal. The NGD function has been exploited to develop experimental high-performance electronic devices, and novel design features of radio frequency (RF) and microwave electronic devices, such as filters, power dividers and amplifiers. Examples include the realization of non-Foster reactive elements, shortening or reducing delay lines, enhancing the efficiency of feedforward linear amplifiers, improvement of phase shifters accuracy and bandwidth, equalization of electrical interconnect effects for the microwave, digital and mixed signal integrity improvement, and minimizing beam-squint in series-fed antenna arrays.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications by : Michael Hosch
Download or read book Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications written by Michael Hosch and published by Cuvillier Verlag. This book was released on 2011-08-08 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
Book Synopsis GaN Transistor Modeling for RF and Power Electronics by : Yogesh Singh Chauhan
Download or read book GaN Transistor Modeling for RF and Power Electronics written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-20 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction
Download or read book The Bisexual Option written by Fred Klein and published by Arbor House Publishing Company. This book was released on 1979-07-01 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Drawing on sociology, psychology, history, art, and frank conversations with male and female bisexuals, the author examines the incidence and nature of bisexuality, the attitudes of bisexual persons, and the rewards of bisexuality
Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2014-06-26 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
Book Synopsis Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance by : Robert F Davis
Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Book Synopsis Intermodulation Distortion in GaN HEMT by : Ibrahim Khalil
Download or read book Intermodulation Distortion in GaN HEMT written by Ibrahim Khalil and published by Cuvillier Verlag. This book was released on 2010-01-03 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work treats intermodulation distortion performance of GaN-HEMT high-power transistors. A detailed study on the physical parameters influencing third-order intermodulation distortions is carried out, based on the large-signal model and on physical device simulation. Devices are characterized in terms of linearity by setting up a sophisticated measurement system. Among others, an electronic fuse is used at the drain side to avoid catastrophic failure during measurement. The bias-dependent transconductance characteristic is identified as the dominating source for intermodulation distortion in GaN HEMTs, while drain-source capacitance and access resistances have only minor influence. The corresponding physical parameters governing the transconductance behavior are determined and optimized structures for high linearity are proposed. Besides characterization and analysis of conventional designs, a novel device architecture for very high linearity is presented. Finally, performance of GaN HEMTs within a hybrid amplifier configuration is shown and the combination of high power, high linearity, and low-noise characteristics is highlighted.
Book Synopsis Modeling of AlGaN/GaN High Electron Mobility Transistors by : D. Nirmal
Download or read book Modeling of AlGaN/GaN High Electron Mobility Transistors written by D. Nirmal and published by Springer. This book was released on 2025-02-11 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
