Quantitative Tem Study Of Nitride Semiconductors

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Quantitative tem study of nitride semiconductors

Author : Korytov-M
Publisher : Omn.Univ.Europ.
ISBN 13 : 9786131545009
Total Pages : 196 pages
Book Rating : 4.5/5 (45 download)

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Book Synopsis Quantitative tem study of nitride semiconductors by : Korytov-M

Download or read book Quantitative tem study of nitride semiconductors written by Korytov-M and published by Omn.Univ.Europ.. This book was released on 2018-02-28 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical part of this work is dedicated to the adaptation of high-resolution transmission electron microscopy for studying III-nitride semiconductors. First, the principle of heterostructure composition evaluation by means of atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on the strain measurements were elaborated. The experimental part of this work is dedicated to the characterization of GaN quantum dots (QDs) grown on AlGaN templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape depends on the GaN layer thickness, whereas the buried QD shape and volume are influenced by the QD capping. Moreover, a phase separation occurs in the AlGaN barriers. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are also proposed.

Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures

Author : Maxim Korytov
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (758 download)

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Book Synopsis Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures by : Maxim Korytov

Download or read book Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures written by Maxim Korytov and published by . This book was released on 2010 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical part of this thesis is dedicated to the adaptation of high-resolution transmission electron microscopy (HRTEM) for the study of GaN-based materials. First, the principle of heterostructure composition evaluation by means of the relative atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on strain measurements were studied. The experimental part of this thesis is dedicated to the characterization of GaN quantum dots (QDs) realized on Al0.5Ga0.5N templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape changes from perfect pyramidal to truncated pyramidal with the increase of the nominal thickness of the deposited GaN layer. The capping of QDs having a perfect pyramidal shape leads to a QD shape truncation and a QD volume increase. Moreover, a phase separation was found in the AlGaN barriers with Al-rich zones formed above the QDs and Ga-rich regions placed around the Al-rich zones. The Al concentration into the Al-rich zones is about 70% and it decreases as the distance from the QD increases. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are proposed.

Combined TEM-cathodoluminescence Study of Nitride Semiconductor Structures

Author : Nicholas Matthews Boyall
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (592 download)

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Book Synopsis Combined TEM-cathodoluminescence Study of Nitride Semiconductor Structures by : Nicholas Matthews Boyall

Download or read book Combined TEM-cathodoluminescence Study of Nitride Semiconductor Structures written by Nicholas Matthews Boyall and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

III-Nitride Semiconductors

Author : M.O. Manasreh
Publisher : Elsevier
ISBN 13 : 0080534449
Total Pages : 463 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh

Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Nitride Semiconductors Studied by Atom Probe Tomography and Correlative Techniques

Author : Samantha Bennett
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (879 download)

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Book Synopsis Nitride Semiconductors Studied by Atom Probe Tomography and Correlative Techniques by : Samantha Bennett

Download or read book Nitride Semiconductors Studied by Atom Probe Tomography and Correlative Techniques written by Samantha Bennett and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices fabricated from nitride semiconductors include blue and green light emitting diodes (LEDs) and laser diodes (LDs). To design efficient devices, the structure and composition of the constituent materials must be well-characterised. Traditional microscopy techniques used to examine nitride semiconductors include transmission electron microscopy (TEM), and atomic force microscopy (AFM). This thesis describes the study of nitride semiconductor materials using these traditional methods, as well as atom probe tomography (APT), a technique more usually applied to metals that provides three-dimensional (3D) compositional information at the atomic scale. By using both APT and correlative microscopy techniques, a more complete understanding of the material can be gained, which can potentially lead to higher-efficiency, longer-lasting devices. Defects, such as threading dislocations (TDs), can harm device performance. An AFM-based technique was used to show that TDs affect the local electrical properties of nitride materials. To investigate any compositional changes around the TD, APT studies of TDs were attempted, and evidence for oxygen enrichment near the TD was observed. The dopant level in nitride devices also affects their optoelectronic properties, and the combination of APT and TEM was used to show that Mg dopants were preferentially incorporated into pyramidal inversion domains, with a Mg content two orders of magnitude above the background level. Much debate has been focused on the microstructural origin of charge carrier localisation in InGaN. Alloy inhomogeneities have often been suggested to provide this localisation, yet APT has revealed InGaN quantum wells to be a statistically random alloy. Electron beam irradiation in the TEM caused damage to the InGaN, however, and a statistically significant deviation from a random alloy distribution was then observed by APT. The alloy homogeneity of InAlN was also studied, and this alloy system provided a unique opportunity to study gallium implantation damage to the APT sample caused during sample preparation by the focused ion beam (FIB). The combination of APT with traditional microscopy techniques made it possible to achieve a thorough understanding of a wide variety of nitride semiconductor materials.

III-V Nitride Semiconductors

Author : Edward T. Yu
Publisher : CRC Press
ISBN 13 : 1000723771
Total Pages : 718 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis III-V Nitride Semiconductors by : Edward T. Yu

Download or read book III-V Nitride Semiconductors written by Edward T. Yu and published by CRC Press. This book was released on 2022-10-30 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.

Transmission Electron Microscopy Study of Nitride Nanostructures

Author : 張文明
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (9 download)

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Book Synopsis Transmission Electron Microscopy Study of Nitride Nanostructures by : 張文明

Download or read book Transmission Electron Microscopy Study of Nitride Nanostructures written by 張文明 and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nitride Semiconductors: Volume 482

Author : Materials Research Society. Meeting
Publisher :
ISBN 13 :
Total Pages : 1274 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Nitride Semiconductors: Volume 482 by : Materials Research Society. Meeting

Download or read book Nitride Semiconductors: Volume 482 written by Materials Research Society. Meeting and published by . This book was released on 1998-04-20 with total page 1274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.

Dilute III-V Nitride Semiconductors and Material Systems

Author : Ayse Erol
Publisher : Springer
ISBN 13 : 9783540745280
Total Pages : 592 pages
Book Rating : 4.7/5 (452 download)

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Book Synopsis Dilute III-V Nitride Semiconductors and Material Systems by : Ayse Erol

Download or read book Dilute III-V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer. This book was released on 2008-01-29 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy

Author : 李仁宏
Publisher :
ISBN 13 :
Total Pages : 117 pages
Book Rating : 4.:/5 (658 download)

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Book Synopsis Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy by : 李仁宏

Download or read book Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy written by 李仁宏 and published by . This book was released on 2009 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Optical Properties of Nitride Semiconductors for Visible Light Emission

Author : Ti Li
Publisher :
ISBN 13 :
Total Pages : 92 pages
Book Rating : 4.:/5 (86 download)

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Book Synopsis The Optical Properties of Nitride Semiconductors for Visible Light Emission by : Ti Li

Download or read book The Optical Properties of Nitride Semiconductors for Visible Light Emission written by Ti Li and published by . This book was released on 2012 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitride semiconductors have wide applications in electronics and optoelectronics technologies. Understanding the nature of the optical recombination process and its effects on luminescence efficiency is important for the development of novel devices. This dissertation deals with the optical properties of nitride semiconductors, including GaN epitaxial layers and more complex heterostructures. The emission characteristics are examined by cathodoluminescence spectroscopy and imaging, and are correlated with the structural and electrical properties studied by transmission electron microscopy and electron holography. Four major areas are covered in this dissertation, which are described next. The effect of strain on the emission characteristics in wurtzite GaN has been studied. The values of the residual strain in GaN epilayers with different dislocation densities are determined by x-ray diffraction, and the relationship between exciton emission energy and the in-plane residual strain is demonstrated. It shows that the emission energy increases withthe magnitude of the in-plane compressive strain. The temperature dependence of the emission characteristics in cubic GaN has been studied. It is observed that the exciton emission and donor-acceptor pair recombination behave differently with temperature. The donor-bound exciton binding energy has been measured to be 13 meV from the temperature dependence of the emission spectrum. It is also found that the ionization energies for both acceptors and donors are smaller in cubic compared with hexagonal structures, which should contribute to higher doping efficiencies. A comprehensive study on the structural and optical properties is presented for InGaN/GaN quantum wells emitting in the blue, green, and yellow regions of the electromagnetic spectrum. Transmission electron microscopy images indicate the presence of indium inhomogeneties which should be responsible for carrier localization. The temperature dependence of emission luminescence shows that the carrier localization effects become more significant with increasing emission wavelength. On the other hand, the effect of non-radiative recombination on luminescence efficiency also varies with the emission wavelength. The fast increase of the non-radiative recombination rate with temperature in the green emitting QWs contributes to the lower efficiency compared with the blue emitting QWs. The possible saturation of non-radiative recombination above 100 K may explain the unexpected high emission efficiency for the yellow emitting QWs Finally, the effects of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells emitting in visible spectral regions have been studied. A significant improvement of the emission efficiency is observed, which is associated with a blue shift in the emission energy, a reduced recombination lifetime, an increased spatial homogeneity in the luminescence, and a weaker internal field across the quantum wells. These are explained by a partial strain relaxation introduced by the InGaN underlayer, which is measured by reciprocal space mapping of the x-ray diffraction intensity.

Properties, Processing and Applications of Gallium Nitride and Related Semiconductors

Author : James H. Edgar
Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 692 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Properties, Processing and Applications of Gallium Nitride and Related Semiconductors by : James H. Edgar

Download or read book Properties, Processing and Applications of Gallium Nitride and Related Semiconductors written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1999 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.

Iii-nitride Materials, Devices And Nano-structures

Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1786343207
Total Pages : 424 pages
Book Rating : 4.7/5 (863 download)

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Book Synopsis Iii-nitride Materials, Devices And Nano-structures by : Zhe Chuan Feng

Download or read book Iii-nitride Materials, Devices And Nano-structures written by Zhe Chuan Feng and published by World Scientific. This book was released on 2017-04-20 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.

Electron Microscopy and Analysis 2001

Author : M. Aindow
Publisher : CRC Press
ISBN 13 : 1482289512
Total Pages : 548 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Electron Microscopy and Analysis 2001 by : M. Aindow

Download or read book Electron Microscopy and Analysis 2001 written by M. Aindow and published by CRC Press. This book was released on 2001-12-01 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron microscopy is now a mainstay characterization tool for solid state physicists and chemists as well as materials scientists. Electron Microscopy and Analysis 2001 presents a useful snapshot of the latest developments in instrumentation, analysis techniques, and applications of electron and scanning probe microscopies. The book is ideal for

SEM Microcharacterization of Semiconductors

Author : D. B. Holt
Publisher : Academic Press
ISBN 13 : 1483288676
Total Pages : 467 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis SEM Microcharacterization of Semiconductors by : D. B. Holt

Download or read book SEM Microcharacterization of Semiconductors written by D. B. Holt and published by Academic Press. This book was released on 2013-10-22 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applications of SEM techniques of microcharacterization have proliferated to cover every type of material and virtually every branch of science and technology. This book emphasizes the fundamental physical principles. The first section deals with the foundation of microcharacterization in electron beam instruments and the second deals with the interpretation of the information obtained in the main operating modes of a scanning electron microscope.

Nitride Semiconductors

Author : Pierre Ruterana
Publisher : John Wiley & Sons
ISBN 13 : 3527607404
Total Pages : 686 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Nitride Semiconductors by : Pierre Ruterana

Download or read book Nitride Semiconductors written by Pierre Ruterana and published by John Wiley & Sons. This book was released on 2006-05-12 with total page 686 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Microscopy of Semiconducting Materials 2003

Author : A.G. Cullis
Publisher : CRC Press
ISBN 13 : 1351083082
Total Pages : 705 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Microscopy of Semiconducting Materials 2003 by : A.G. Cullis

Download or read book Microscopy of Semiconducting Materials 2003 written by A.G. Cullis and published by CRC Press. This book was released on 2018-01-10 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.