Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Proton Implanted And Helium Implanted Silicon full books in PDF, epub, and Kindle. Read online Proton Implanted And Helium Implanted Silicon ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : H. Rajainmäki
Publisher :
ISBN 13 :
Total Pages : 19 pages
Book Rating : 4.:/5 (931 download)
Download or read book Proton-implanted and Helium-implanted Silicon written by H. Rajainmäki and published by . This book was released on 1990 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Billy Crowder
Publisher : Springer Science & Business Media
ISBN 13 : 146842064X
Total Pages : 644 pages
Book Rating : 4.4/5 (684 download)
Download or read book Ion Implantation in Semiconductors and Other Materials written by Billy Crowder and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
Author : Simon Romani
Publisher :
ISBN 13 :
Total Pages : 412 pages
Book Rating : 4.:/5 (896 download)
Download or read book Isolation of Silicon by Implantation of Hydrogen Helium and Oxygen written by Simon Romani and published by . This book was released on 1991 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : James Mayer
Publisher : Elsevier
ISBN 13 : 0323157211
Total Pages : 297 pages
Book Rating : 4.3/5 (231 download)
Download or read book Lon Implantation in Semiconductors written by James Mayer and published by Elsevier. This book was released on 2012-12-02 with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation in Semiconductors: Silicon and Germanium covers the developments in the major basic aspects in ion implantation in silicon and germanium. These aspects include dopant distribution and location, radiant damage, and electrical characteristics. This book is composed of six chapters and begins with a discussion on the factors affecting the electrical characteristics of implanted layers in silicon and germanium, such as range distributions of dopant species, lattice disorder, and location of dopant species on substitutional and interstitial sites in the lattice. The next chapters examine the basic principles of range distributions of implanted atoms and the problem of lattice disorder and radiation damage, which are vital in most implantation work. These topics are followed by an outline of the so-called channeling effect technique and its application in lattice location determination of implanted atoms. A chapter describes the dopant behavior in the layers where the majority of the implanted atoms are located, emphasizing the use of Hall-effect and sheet-resistivity measurements to determine the carrier concentration and mobility. The final chapter considers the primary characteristics of ion-implanted layers in semiconductors. This chapter also presents several rules of thumb, which allow first approximations to be made. This book is an ideal source for semiconductor specialists, researchers, and manufacturers.
Author : Cor L. Claeys
Publisher : The Electrochemical Society
ISBN 13 : 1566775043
Total Pages : 504 pages
Book Rating : 4.5/5 (667 download)
Download or read book High Purity Silicon 9 written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 2006 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue discusses the latest developments in the growth, characterization, device processing and applications of high-purity silicon in either bulk or epitaxial form. Information is given on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states. Device and circuit aspects are also covered. Advanced substrates such as SOI, strained Si and germanium-on-insulator are discussed.
Author : Michael Budde
Publisher :
ISBN 13 :
Total Pages : 157 pages
Book Rating : 4.:/5 (471 download)
Download or read book Hydrogen-Related Defects in Proton-Implanted Silicon and Germanium written by Michael Budde and published by . This book was released on 1998 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : E. Simoen
Publisher : The Electrochemical Society
ISBN 13 : 1566778301
Total Pages : 262 pages
Book Rating : 4.5/5 (667 download)
Download or read book High Purity Silicon 11 written by E. Simoen and published by The Electrochemical Society. This book was released on 2010-10 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿High Purity Silicon 11¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.
Author :
Publisher : Academic Press
ISBN 13 : 0080525253
Total Pages : 541 pages
Book Rating : 4.0/5 (85 download)
Download or read book Hydrogen in Semiconductors II written by and published by Academic Press. This book was released on 1999-05-05 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference
Author : Philippe Edouard Tissot
Publisher :
ISBN 13 :
Total Pages : 288 pages
Book Rating : 4.:/5 (347 download)
Download or read book One Hundred Germanium Silicon Layers Produced by Heated Ion Implantation written by Philippe Edouard Tissot and published by . This book was released on 1994 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Atomic Energy of Canada Limited
Publisher :
ISBN 13 :
Total Pages : 35 pages
Book Rating : 4.:/5 (719 download)
Download or read book Ion Implantation of Silicon. I. Atom Location and Lattice Disorder by Means of 1.0-Mev Helium Ions Scattering written by Atomic Energy of Canada Limited and published by . This book was released on 1965 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. A. Davies
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (141 download)
Download or read book Ion implantation of silicon. i. atom location and lattice disorder by means of 1.0-mev helium ion scattering written by J. A. Davies and published by . This book was released on 1967 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Glenn Zimmerman
Publisher :
ISBN 13 :
Total Pages : 130 pages
Book Rating : 4.:/5 (344 download)
Download or read book A Study of the Electronic Properties of Proton Implanted Silicon Crystals Using a Deep-level Transient Spectroscope written by Glenn Zimmerman and published by . This book was released on 1994 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jacques I. Pankove
Publisher : Academic Press
ISBN 13 : 0080864317
Total Pages : 655 pages
Book Rating : 4.0/5 (88 download)
Download or read book Hydrogen in Semiconductors written by Jacques I. Pankove and published by Academic Press. This book was released on 1991-04-23 with total page 655 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Author : James Edward III. Westmoreland
Publisher :
ISBN 13 :
Total Pages : 143 pages
Book Rating : 4.:/5 (227 download)
Download or read book Channeling Effect Analysis of Lattice Disorder in Boron Implanted Silicon written by James Edward III. Westmoreland and published by . This book was released on 1971 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report describes a method for obtaining consistent disorder distributions from helium and proton backscattering analyses of the disordered regions in boron implanted silicon. Measurements are given of temperature effects on the disorder in regions of low temperature where such effects were not anticipated. An application of the backscattering analysis technique to study the composition of thin layers is presented. (Author).
Author : Kozlovski Vitali
Publisher : World Scientific
ISBN 13 : 9812565213
Total Pages : 264 pages
Book Rating : 4.8/5 (125 download)
Download or read book Radiation Defect Engineering written by Kozlovski Vitali and published by World Scientific. This book was released on 2005 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
Author :
Publisher :
ISBN 13 :
Total Pages : 764 pages
Book Rating : 4.3/5 (91 download)
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 824 pages
Book Rating : 4.:/5 (3 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1992 with total page 824 pages. Available in PDF, EPUB and Kindle. Book excerpt:
