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Photoresponse Of Ingaas Inp Multiple Quantum Wells
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Book Synopsis Photoresponse of InGaAs/InP Multiple Quantum Wells by : Donggang David Wu
Download or read book Photoresponse of InGaAs/InP Multiple Quantum Wells written by Donggang David Wu and published by . This book was released on 1990 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Intersubband Transitions in InGaAs/InAlAs Multiple Quantum Wells Grown on InP Substrate by : Qiaoying Zhou
Download or read book Intersubband Transitions in InGaAs/InAlAs Multiple Quantum Wells Grown on InP Substrate written by Qiaoying Zhou and published by . This book was released on 2002 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 A. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.
Book Synopsis Growth of InGaAs/InP Multiple Quantum Well by Metalorganic Vapor Phase Epitaxy by : Xiaosong Jiang
Download or read book Growth of InGaAs/InP Multiple Quantum Well by Metalorganic Vapor Phase Epitaxy written by Xiaosong Jiang and published by . This book was released on 1994 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications by : Sheng S. Li
Download or read book Proceedings of the Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications written by Sheng S. Li and published by The Electrochemical Society. This book was released on 1997 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Quantum Well Intermixing by : J. T. Lie
Download or read book Semiconductor Quantum Well Intermixing written by J. T. Lie and published by CRC Press. This book was released on 2000-01-18 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure
Book Synopsis Compound Semiconductors 2002 by : Marc Ilegems
Download or read book Compound Semiconductors 2002 written by Marc Ilegems and published by CRC Press. This book was released on 2003-09-01 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt: A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electronic and optoelectronic devices. The book covers heteroepitaxial growth, quantum confined emitters and detectors, quantum wires and dots, ultrafast transistors, and various compound materials.
Book Synopsis Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering by : J. Zhao
Download or read book Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering written by J. Zhao and published by . This book was released on 2002 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: InGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. SiN4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal annealing (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the SiN4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.
Book Synopsis Intersubband Transitions in Quantum Wells: Physics and Devices by : Sheng S. Li
Download or read book Intersubband Transitions in Quantum Wells: Physics and Devices written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.
Book Synopsis Proceedings of the International Conference on Computers and Devices for Communication by :
Download or read book Proceedings of the International Conference on Computers and Devices for Communication written by and published by Allied Publishers. This book was released on 1998 with total page 698 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Room-Temperature Annealing of 1MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells by :
Download or read book Room-Temperature Annealing of 1MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells (namely triple wells and five wells embedded) and bulk InGaAs are investigated after high energy electron irradiation. It is observed that the photoluminescence (PL) intensity of bulk InGaAs materials is enhanced after low dose electron irradiation and the PL intensity for all the three samples is degraded dramatically when the electron dose is relatively high. With respect to the room-temperature annealing, we find that the PL intensity for both samples recovers relatively fast at the initial stage. The PL performance of multiple quantum-well samples shows better recovery after irradiation compared with the results of bulk InGaAs materials. Meanwhile, the recovery speed factors of multiple quantum-well samples are relatively faster than those of the bulk InGaAs materials as well. We infer that the recovery difference between the quantum-well materials and bulk materials originates from the fact that the radiation induced defects are confined in the quantum wells as a consequence of the free energy barrier between the In0.53 Ga0.47 As wells and InP barrier layers.
Book Synopsis Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany by : Günter Weimann
Download or read book Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors*Supported by the National Natural Science Foundation of China Under Grant Nos 11574362, 61210014, and 11374340, and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission Under Grant No Z151100003515001 by :
Download or read book Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors*Supported by the National Natural Science Foundation of China Under Grant Nos 11574362, 61210014, and 11374340, and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission Under Grant No Z151100003515001 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p—n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p—n junction escape from quantum wells and form photocurrent rather than relax to the ground state of the quantum wells. The photo absorption coefficient of multiple quantum wells is also enhanced by a p—n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.
Download or read book Photodetectors written by and published by . This book was released on 1999 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InAsP/GaInP Strain-compensated Multiple Quantum Wells and Their Optical Modulator Applications by : Xiaobing Mei
Download or read book InAsP/GaInP Strain-compensated Multiple Quantum Wells and Their Optical Modulator Applications written by Xiaobing Mei and published by . This book was released on 1997 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hot Carriers in Semiconductors by : J. Shah
Download or read book Hot Carriers in Semiconductors written by J. Shah and published by Elsevier. This book was released on 2013-10-22 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive account of the latest developments in the rapidly expanding area of Semiconductor Technology. Main topics covered include real space transfer/heterostructures, ultrafast studies, optical studies, transport theory, devices, ballistic transport, scattering processes and hot phonons, tunnelling, far infrared and magnetic field studies and impact ionization/noise/chaos. Other aspects include the use of femtosecond lasers in investigating transient hot carrier effects on femtosecond timescales, magnetotransport and carrier-carrier interactions.