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Photoelectrochemical Etching Of Gan For High Quality Optical Devices
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Book Synopsis Photoelectrochemical Etching of GaN for High Quality Optical Devices by : Adele C. Tamboli
Download or read book Photoelectrochemical Etching of GaN for High Quality Optical Devices written by Adele C. Tamboli and published by . This book was released on 2009 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride has become an important semiconductor material for a variety of device applications, including light emitting diodes (LEDs), lasers, and transistors. One of the main challenges in GaN device fabrication is the chemical stability of GaN which leads to a lack of wet etching techniques. Instead, dry etching is used almost exclusively, leading to ion damage and poor selectivity between different layers. In this dissertation, we discuss photoelectrochemical (PEC) etching, a photoassisted wet etch technique that can be used to etch GaN and its alloys. We develop new aspects of this technique to extend its applicability to a larger variety of devices and use the technique to fabricate a few optical devices, including microdisk lasers.
Book Synopsis GaN and Related Materials by : Stephen J. Pearton
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Book Synopsis Photoelectrochemical Etching of GaN Quantum Wires by :
Download or read book Photoelectrochemical Etching of GaN Quantum Wires written by and published by . This book was released on 2015 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis State-of-the-Art Program on Compound Semiconductors : (SOTAPOCS XLII) and Processes at the Compound-Semiconductor/Solution Interface by : P. C. Chang
Download or read book State-of-the-Art Program on Compound Semiconductors : (SOTAPOCS XLII) and Processes at the Compound-Semiconductor/Solution Interface written by P. C. Chang and published by The Electrochemical Society. This book was released on 2005 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Optical Microcavities by : Anthony H. W. Choi
Download or read book Handbook of Optical Microcavities written by Anthony H. W. Choi and published by CRC Press. This book was released on 2014-10-06 with total page 527 pages. Available in PDF, EPUB and Kindle. Book excerpt: An optical cavity confines light within its structure and constitutes an integral part of a laser device. Unlike traditional gas lasers, semiconductor lasers are invariably much smaller in dimensions, making optical confinement more critical than ever. In this book, modern methods that control and manipulate light at the micrometer and nanometer scales by using a variety of cavity geometries and demonstrate optical resonance from ultra-violet (UV) to infra-red (IR) bands across multiple material platforms are explored. The book has a comprehensive collection of chapters that cover a wide range of topics pertaining to resonance in optical cavities and are contributed by leading researchers in the field. The topics include theory, design, simulation, fabrication, and characterization of micrometer- and nanometer-scale structures and devices that support cavity resonance via various mechanisms such as Fabry–Pérot, whispering gallery, photonic bandgap, and plasmonic modes. The chapters discuss optical cavities that resonate from UV to IR wavelengths and are based on prominent III-V material systems, including Al, In, and Ga nitrides, ZnO, and GaAs.
Book Synopsis Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices by : Hadis Morkoç
Download or read book Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.
Book Synopsis Properties, Processing and Applications of Gallium Nitride and Related Semiconductors by : James H. Edgar
Download or read book Properties, Processing and Applications of Gallium Nitride and Related Semiconductors written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1999 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
Book Synopsis Iii-Nitride Devices and Nanoengineering by : Zhe Chuan Feng
Download or read book Iii-Nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by Imperial College Press. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Book Synopsis Photoelectrochemical Etching of Blazed Eschelle Gratings in N-GaAs by : Jianguo Li
Download or read book Photoelectrochemical Etching of Blazed Eschelle Gratings in N-GaAs written by Jianguo Li and published by . This book was released on 1988 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoelectrochemical etching can be a technique for producing microstructures in semiconductors with a high aspect ratio and excellent lateral uniformity. We had demonstrated previously that symmetrical V-groove Eschelle diffraction gratings, used in a variety of spectrometers and opto-electronic devices, can be fabricated by photoanodic dissolution of (100) oriented GaAs, using a Ronchi ruling photoresist mask. In this paper, we report the etching of blazed Eschelle gratings of 15 x 15 mm dimensions and with 50 cycles/mm. To do this, n-GaAs crystals were sliced with a (100)-n orientation, with respect to the (011) plane. By varying the angle n, gratings with blaze angles of 45, 53 and 60 have been demonstrated. In situ coulometry was used to monitor the etching process and to determine when the grating reached completion. SEM and optical measurements of the blaze angles of the completed gratings were in close agreement. Etching, Photoelectrochemical, Grating, Gallium Arsenides. (MJM).
Book Synopsis III-Nitride Semiconductors and Their Modern Devices by : Bernard Gil
Download or read book III-Nitride Semiconductors and Their Modern Devices written by Bernard Gil and published by Semiconductor Science and Tech. This book was released on 2013-08-22 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
Book Synopsis Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method (Penerbit USM) by : Cheah Sook Fong
Download or read book Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method (Penerbit USM) written by Cheah Sook Fong and published by Penerbit USM. This book was released on 2017 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoelectrochemical (PEC) etching is a simple and inexpensive wet etching approach that is widely used to fabricate porous gallium nitride (GaN) thin films. However, many fundamental issues on the etching mechanism and the optical response of the fabricated porous structure still remain unclear. In this book, PEC etched porous GaN thin films with a variety of morphologies such as circular, hexagonal, leaf like-, and honeycomb-like patterns were described in detail. The effects of semiconductor types, etching voltage and etching duration on the surface morphology and the optical response of the fabricated porous structure were discussed. Attenuated total reflection method which is very sensitive to the surface layer of the porous GaN was applied to extract the carrier concentration, porosity, and layer thicknesses or the porous layer. Through this book, a better understanding of the PEC etching of the porous GaN can be obtained.
Book Synopsis III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV) by : F. Ren
Download or read book III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV) written by F. Ren and published by The Electrochemical Society. This book was released on 2001 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 by : J. Wang
Download or read book State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 written by J. Wang and published by The Electrochemical Society. This book was released on 2008-10 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions focuses on issues pertinent to materials growth, characterization, processing, development, application of compound semiconductor materials and devices, including nitrides and wide-bandgap semiconductors.
Book Synopsis Photoelectrochemical Hydrogen Generation by : Praveen Kumar
Download or read book Photoelectrochemical Hydrogen Generation written by Praveen Kumar and published by Springer Nature. This book was released on 2022-01-19 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the hydrogen fuel generation from water via photoelectrochemical process. It elaborates the theory and fundamental concepts of photoelectrochemistry to understand the photoelectrochemical process for water splitting to generate hydrogen fuel. The book further deliberates about the hydrogen as a futuristic chemical fuel to store solar energy in the form of chemical bonds and also as a renewable alternative to fossil fuels. The book establishes the need for hydrogen fuel and discusses the standards and practices used for solar driven photoelectrochemical water splitting. It also discusses the current and future status of the nanomaterials as efficient photoelectrodes for solar photoelectrochemical water splitting. The book will be of interest to the researchers, students, faculty, scientists, engineers, and technologists working in the domain of material science, energy harvesting, energy conversion, photo electrochemistry, nanomaterials for photo-electrochemical (PEC) cell, etc.
Book Synopsis UV-Photoassisted Etching of GaN in KOH. by :
Download or read book UV-Photoassisted Etching of GaN in KOH. written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.
Book Synopsis Inorganic Flexible Optoelectronics by : Zhenqiang Ma
Download or read book Inorganic Flexible Optoelectronics written by Zhenqiang Ma and published by John Wiley & Sons. This book was released on 2019-08-26 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensively covering inorganic flexible optoelectronics and their applications This highly application-oriented book provides an overview of the vibrant research field of inorganic flexible optoelectronics ? from materials to applications ? covering bulk materials as well as nanowires, thin films, nanomembranes for application in light emitting diodes, photodetectors, phototransistors, and solar cells. Edited and written by world-leading experts in the field, Inorganic Flexible Optoelectronics: Materials and Applications begins by covering flexible inorganic light emitting diodes enabled by new materials and designs, and provides examples of their use in neuroscience research. It then looks at flexible light-emitting diodes based on inorganic semiconductor nanostructures ? from thin films to nanowires. Next, the book examines flexible photodetectors with nanomembranes and nanowires; 2-D material based photodetectors on flexible substrates; and IV group materials based solar cells and their flexible photovoltaic technologies. Following that, it presents readers with a section on thin-film III-V single junction and multijunction solar cells and demonstrates their integration onto heterogeneous substrates. Finally, the book finishes with in-depth coverage of novel materials based flexible solar cells. -A must-have book that provides an unprecedented overview of the state of the art in flexible optoelectronics -Supplies in-depth information for new and already active researchers in the field of optoelectronics -Lays down the undiluted knowledge on inorganic flexible optoelectronics ? from materials to devices -Focuses on materials and devices for high-performance applications such as light-emitting diodes, solar cells, and photodetectors Inorganic Flexible Optoelectronics: Materials and Applications appeals to materials scientists, electronics engineers, electrical engineers, inorganic chemists, and solid state physicists.
Book Synopsis Vertical GaN and SiC Power Devices by : Kazuhiro Mochizuki
Download or read book Vertical GaN and SiC Power Devices written by Kazuhiro Mochizuki and published by Artech House. This book was released on 2018-04-30 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.
