Papers from the 16th North American Conference on Molecular Beam Epitaxy

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ISBN 13 : 9781563968211
Total Pages : 264 pages
Book Rating : 4.9/5 (682 download)

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Book Synopsis Papers from the 16th North American Conference on Molecular Beam Epitaxy by : North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.)

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Wide Bandgap Semiconductor Materials and Devices 12

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Publisher : The Electrochemical Society
ISBN 13 : 1566778670
Total Pages : 222 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Wide Bandgap Semiconductor Materials and Devices 12 by : J. A. Bardwell

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Index of Conference Proceedings

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ISBN 13 :
Total Pages : 696 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Index of Conference Proceedings by : British Library. Document Supply Centre

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Molecular Beam Epitaxy

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Publisher : Newnes
ISBN 13 : 0123918596
Total Pages : 745 pages
Book Rating : 4.1/5 (239 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. - Condenses fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

North American Molecular-Beam Epitaxy Conference, Stanford University, Stanford, CA., September 13-15, 1993

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ISBN 13 :
Total Pages : 268 pages
Book Rating : 4.X/5 (6 download)

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Book Synopsis North American Molecular-Beam Epitaxy Conference, Stanford University, Stanford, CA., September 13-15, 1993 by :

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SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

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Publisher : The Electrochemical Society
ISBN 13 : 1566778255
Total Pages : 1066 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices by : D. Harame

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Molecular Beam Epitaxy 1994

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ISBN 13 :
Total Pages : 760 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Molecular Beam Epitaxy 1994 by :

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Long-range Order Kinetics in Ni3-Al-based Intermetallic Compounds with L12-type Superstructure

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ISBN 13 :
Total Pages : 770 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Long-range Order Kinetics in Ni3-Al-based Intermetallic Compounds with L12-type Superstructure by : Rafał Kozubski

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Index of Conference Proceedings Received

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ISBN 13 :
Total Pages : 456 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Index of Conference Proceedings Received by : British Library. Lending Division

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Summaries of Papers Presented at the Conference on Lasers and Electro-optics

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ISBN 13 :
Total Pages : 670 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Summaries of Papers Presented at the Conference on Lasers and Electro-optics by :

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Energy Research Abstracts

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ISBN 13 :
Total Pages : 486 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Energy Research Abstracts by :

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Advances in Infrared Photodetectors

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Publisher : Elsevier
ISBN 13 : 0123813387
Total Pages : 385 pages
Book Rating : 4.1/5 (238 download)

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Book Synopsis Advances in Infrared Photodetectors by :

Download or read book Advances in Infrared Photodetectors written by and published by Elsevier. This book was released on 2011-05-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. - Written and edited by internationally renowned experts - Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry

RLE Progress Report

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ISBN 13 :
Total Pages : 534 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis RLE Progress Report by : Massachusetts Institute of Technology. Research Laboratory of Electronics

Download or read book RLE Progress Report written by Massachusetts Institute of Technology. Research Laboratory of Electronics and published by . This book was released on 1999 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:

National Semiconductor Metrology Program

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ISBN 13 :
Total Pages : 160 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis National Semiconductor Metrology Program by : National Institute of Standards and Technology (U.S.)

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Large Space Structures & Systems in the Space Station Era

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ISBN 13 :
Total Pages : 700 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Large Space Structures & Systems in the Space Station Era by :

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Proceedings in Print

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ISBN 13 :
Total Pages : 756 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Proceedings in Print by :

Download or read book Proceedings in Print written by and published by . This book was released on 1995 with total page 756 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 146845661X
Total Pages : 338 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors by : T.C. McGill

Download or read book Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors written by T.C. McGill and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.