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Author : James Michael Ryan
Publisher :
ISBN 13 :
Total Pages : 566 pages
Book Rating : 4.:/5 (89 download)
Download or read book Oxygen-doped III-V Semiconductors Grown by Metal Organic Vapor Phase Epitaxy written by James Michael Ryan and published by . This book was released on 2004 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jen-Wu Huang
Publisher :
ISBN 13 :
Total Pages : 768 pages
Book Rating : 4.:/5 (89 download)
Download or read book Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy written by Jen-Wu Huang and published by . This book was released on 1996 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jiang Li
Publisher :
ISBN 13 :
Total Pages : 676 pages
Book Rating : 4.:/5 (89 download)
Download or read book Surface and Interface Structure Formation in III-V Compound Semiconductors Grown by Metal Organic Vapor Phase Epitaxy written by Jiang Li and published by . This book was released on 1998 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerald B. Stringfellow
Publisher : Elsevier
ISBN 13 : 0323139175
Total Pages : 417 pages
Book Rating : 4.3/5 (231 download)
Download or read book Organometallic Vapor-Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
Author : Maarten Reinier Leys
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.0/5 ( download)
Download or read book Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures written by Maarten Reinier Leys and published by . This book was released on 1990 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Steven P. DenBaars
Publisher :
ISBN 13 :
Total Pages : 251 pages
Book Rating : 4.:/5 (227 download)
Download or read book Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition written by Steven P. DenBaars and published by . This book was released on 1988 with total page 251 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic Layer Epitaxy (ALE) is a promising variation of conventional vapor phase epitaxy which achieves uniform growth of ultra-thin epitaxial layers by a self-limiting monolayer by monolayer deposition process. By developing a new regime of metalorganic chemical vapor deposition (MOCVD) growth, in which saturated surface reactions control the growth, it is possible to alternately deposit monolayers of column III and column V elements so that only one monolayer of the III-V compound semiconductor is deposited in every cycle of the deposition. In this thesis, ALE growth of single crystal GaAs, as well as AlAs and GaAs/AlGaAs heterostructures and devices is demonstrated. We have been able to grow extremely uniform ultra-thin epitaxial layers and quantum wells (QWs) with thickness variations of less than one monolayer per cm over an entire sample in an optimized reactor using ALE. The observed dependence of the growth rate on temperature and trimethylgallium flux is modeled by first order adsorption kinetics utilizing measured reaction rate constants. The low temperature photoluminescence (PL) of ALE grown GaAs QW's exhibit narrow line intrinsic luminescence with linewidths comparable to the best reported values by conventional MOCVD. (jhd).
Author : Eunjung Cho
Publisher :
ISBN 13 : 9783832284312
Total Pages : 146 pages
Book Rating : 4.2/5 (843 download)
Download or read book Three Nitride Metal Organic Vapor Phase Epitaxy Growth and Characterization and Use in Gas Sensing Devices written by Eunjung Cho and published by . This book was released on 2009 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 21 pages
Book Rating : 4.:/5 (227 download)
Download or read book Rare Earth Doped III-V Semiconductors for Optoelectronics written by and published by . This book was released on 1993 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: The overall goal of this Phase I project was to focus on developing procedures for the fabrication and evaluation of epitaxial layers of GaAs which are doped with rare earth (RE) ions of Erbium. The essential elements of the originally proposed approach have been demonstrated through the efforts on this Phase I project. Erbium was successfully incorporated in epitaxially grown Gallium Arsenide (GaAs) and Aluminum-Gallium Arsenide (AlGaAs) by using the Metal Organic Chemical Vapor Deposition (MOCVD) method and using Tris(n- butylcyclopentadienyl)erbium [Er(C4H9C5H4)3] as Er source material. Concentrations of Erbium as high as 10 to the 19 power /cu cm 3 were detected by Secondary Ion Mass Spectroscopy (SIMS). A substantial, though unknown, amount of the Erbium was incorporated in the form of trivalent ions; this was evident by the observation of the characteristic Er(3+) light emission from photoluminescence spectra of our samples.
Author : Kirk Lee Fry
Publisher :
ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.:/5 (227 download)
Download or read book Organometallic Vapor-phase Epitaxy Process Design for Indium-based III-V Semiconductors written by Kirk Lee Fry and published by . This book was released on 1990 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Changhua Chen
Publisher :
ISBN 13 :
Total Pages : 288 pages
Book Rating : 4.:/5 (214 download)
Download or read book Evaluation of Organometallic As and P Sources for the Growth of III-V Semiconductors in Organometallic Vapor Phase Epitaxy written by Changhua Chen and published by . This book was released on 1990 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (437 download)
Download or read book Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1992 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author :
Publisher :
ISBN 13 :
Total Pages : 804 pages
Book Rating : 4.F/5 ( download)
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M.S. Shur
Publisher : CRC Press
ISBN 13 : 1000112314
Total Pages : 1087 pages
Book Rating : 4.0/5 (1 download)
Download or read book Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 written by M.S. Shur and published by CRC Press. This book was released on 2020-10-28 with total page 1087 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
Author : Peter Rudolph
Publisher : Elsevier
ISBN 13 : 0444633065
Total Pages : 1420 pages
Book Rating : 4.4/5 (446 download)
Download or read book Handbook of Crystal Growth written by Peter Rudolph and published by Elsevier. This book was released on 2014-11-04 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy. Volume 2A Presents the status and future of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B Explores capillarity control of the crystal shape at the growth from the melt Highlights modeling of heat and mass transport dynamics Discusses control of convective melt processes by magnetic fields and vibration measures Includes imperative information on the segregation phenomenon and validation of compositional homogeneity Examines crystal defect generation mechanisms and their controllability Illustrates proper automation modes for ensuring constant crystal growth process Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries
Author :
Publisher :
ISBN 13 :
Total Pages : 682 pages
Book Rating : 4.:/5 (321 download)
Download or read book South African Journal of Science written by and published by . This book was released on 1991 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt:
