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Author : D. J. Dumin
Publisher : World Scientific
ISBN 13 : 9789810248420
Total Pages : 292 pages
Book Rating : 4.2/5 (484 download)
Download or read book Oxide Reliability written by D. J. Dumin and published by World Scientific. This book was released on 2002 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents in summary the state of our knowledge of oxide reliability.
Author : David J Dumin
Publisher : World Scientific
ISBN 13 : 981448945X
Total Pages : 281 pages
Book Rating : 4.8/5 (144 download)
Download or read book Oxide Reliability: A Summary Of Silicon Oxide Wearout, Breakdown, And Reliability written by David J Dumin and published by World Scientific. This book was released on 2002-01-18 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
Author : Juan Pablo Borja
Publisher : Springer
ISBN 13 : 3319432206
Total Pages : 109 pages
Book Rating : 4.3/5 (194 download)
Download or read book Dielectric Breakdown in Gigascale Electronics written by Juan Pablo Borja and published by Springer. This book was released on 2016-09-16 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.
Author : Tobias Erlbacher
Publisher : Springer
ISBN 13 : 3319005006
Total Pages : 235 pages
Book Rating : 4.3/5 (19 download)
Download or read book Lateral Power Transistors in Integrated Circuits written by Tobias Erlbacher and published by Springer. This book was released on 2014-10-08 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
Author : Daniel Sorin
Publisher : Springer Nature
ISBN 13 : 3031017234
Total Pages : 103 pages
Book Rating : 4.0/5 (31 download)
Download or read book Fault Tolerant Computer Architecture written by Daniel Sorin and published by Springer Nature. This book was released on 2022-05-31 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: For many years, most computer architects have pursued one primary goal: performance. Architects have translated the ever-increasing abundance of ever-faster transistors provided by Moore's law into remarkable increases in performance. Recently, however, the bounty provided by Moore's law has been accompanied by several challenges that have arisen as devices have become smaller, including a decrease in dependability due to physical faults. In this book, we focus on the dependability challenge and the fault tolerance solutions that architects are developing to overcome it. The two main purposes of this book are to explore the key ideas in fault-tolerant computer architecture and to present the current state-of-the-art - over approximately the past 10 years - in academia and industry. Table of Contents: Introduction / Error Detection / Error Recovery / Diagnosis / Self-Repair / The Future
Author :
Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 2001 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Electrochemical Society. Dielectric Science and Technology Division
Publisher : The Electrochemical Society
ISBN 13 : 9781566773133
Total Pages : 304 pages
Book Rating : 4.7/5 (731 download)
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 2001 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Levinshtein
Publisher : World Scientific
ISBN 13 : 9812703330
Total Pages : 226 pages
Book Rating : 4.8/5 (127 download)
Download or read book Breakdown Phenomena in Semiconductors and Semiconductor Devices written by Michael Levinshtein and published by World Scientific. This book was released on 2005 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Author : Kozlovski Vitali
Publisher : World Scientific
ISBN 13 : 9812565213
Total Pages : 264 pages
Book Rating : 4.8/5 (125 download)
Download or read book Radiation Defect Engineering written by Kozlovski Vitali and published by World Scientific. This book was released on 2005 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9812568352
Total Pages : 342 pages
Book Rating : 4.8/5 (125 download)
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author : Ramesh Harjani
Publisher : World Scientific
ISBN 13 : 9814479020
Total Pages : 233 pages
Book Rating : 4.8/5 (144 download)
Download or read book Design Of High-speed Communication Circuits written by Ramesh Harjani and published by World Scientific. This book was released on 2006-01-17 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: MOS technology has rapidly become the de facto standard for mixed-signal integrated circuit design due to the high levels of integration possible as device geometries shrink to nanometer scales. The reduction in feature size means that the number of transistor and clock speeds have increased significantly. In fact, current day microprocessors contain hundreds of millions of transistors operating at multiple gigahertz. Furthermore, this reduction in feature size also has a significant impact on mixed-signal circuits. Due to the higher levels of integration, the majority of ASICs possesses some analog components. It has now become nearly mandatory to integrate both analog and digital circuits on the same substrate due to cost and power constraints. This book presents some of the newer problems and opportunities offered by the small device geometries and the high levels of integration that is now possible.The aim of this book is to summarize some of the most critical aspects of high-speed analog/RF communications circuits. Attention is focused on the impact of scaling, substrate noise, data converters, RF and wireless communication circuits and wireline communication circuits, including high-speed I/O.
Author : Michael S Shur
Publisher : World Scientific
ISBN 13 : 9814477478
Total Pages : 774 pages
Book Rating : 4.8/5 (144 download)
Download or read book Frontiers In Electronics (With Cd-rom) - Proceedings Of The Wofe-04 written by Michael S Shur and published by World Scientific. This book was released on 2006-08-10 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
Author : Sergey Rumyantsev
Publisher : World Scientific
ISBN 13 : 981447777X
Total Pages : 342 pages
Book Rating : 4.8/5 (144 download)
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author : A M Rajendran
Publisher : World Scientific
ISBN 13 : 9814476684
Total Pages : 601 pages
Book Rating : 4.8/5 (144 download)
Download or read book Transformational Science And Technology For The Current And Future Force (With Cd-rom) - Proceedings Of The 24th Us Army Science Conference written by A M Rajendran and published by World Scientific. This book was released on 2006-11-08 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the reader with a unique opportunity to understand the basic and applied research and technology areas that support applications to enable Transformational capabilities for US Soldiers. The research papers are in line with the theme of the 24th Army Science Conference: “Transformational Science and Technology for the Current and Future Force,” emphasizing the critical role of Science and Technology in addressing the significant challenges posed by Global War On Terrorism while simultaneously developing Transformational capabilities for the Future Force.
Author : Yuyu Liu
Publisher : World Scientific
ISBN 13 : 9814478709
Total Pages : 242 pages
Book Rating : 4.8/5 (144 download)
Download or read book High-speed Optical Transceivers: Integrated Circuits Designs And Optical Devices Techniques written by Yuyu Liu and published by World Scientific. This book was released on 2006-03-09 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the unique advantages and large inherent transmission capacity of optical fiber communication systems. The long-term and high-risk research challenges of optical transceivers are analyzed with a view to sustaining the seemingly insatiable demand for bandwidth. A broad coverage of topics relating to the design of high-speed optical devices and integrated circuits, oriented to low power, low cost, and small area, is discussed.Written by specialists with many years of research and engineering experience in the field of optical fiber communication, this book is essential for an audience dedicated to the development of integrated electronic systems for optical communication applications. It can also be used as a supplementary text for graduate courses on optical transceiver IC design.
Author : V. Narayanan
Publisher : The Electrochemical Society
ISBN 13 : 1566777097
Total Pages : 367 pages
Book Rating : 4.5/5 (667 download)
Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment written by V. Narayanan and published by The Electrochemical Society. This book was released on 2009-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author : Michael A Stroscio
Publisher : World Scientific
ISBN 13 : 9814486558
Total Pages : 244 pages
Book Rating : 4.8/5 (144 download)
Download or read book Advanced Semiconductor Heterostructures: Novel Devices, Potential Device Applications And Basic Properties written by Michael A Stroscio and published by World Scientific. This book was released on 2003-09-12 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.
