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Oxide Layer Growth On Gallium Arsenide Using A High Kinetic Energy Atomic Oxygen Beam
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Book Synopsis Oxide Layer Growth on Gallium Arsenide Using a High Kinetic Energy Atomic Oxygen Beam by : M. A. Hoffbauer
Download or read book Oxide Layer Growth on Gallium Arsenide Using a High Kinetic Energy Atomic Oxygen Beam written by M. A. Hoffbauer and published by . This book was released on 1992 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: The inherent theoretical advantages of GaAs electronic devices over those employing Si technology are severely limited in practice by the difficulty of forming passivating oxide layers. Problems encountered with oxide stoichiometry, crystallinity, interface defects, and chemical stability have been the subjects of numerous studies over the last 15 years. One of the major factors contributing to these problems is the differing rates of oxidation of Ga and As and the volatility of the As2O3 and As2O5 products at temperatures above -100 deg C.A number of different approaches to the growth of device-quality native oxides at low temperatures on GaAs have been attempted including: the use of ozone; simultaneous 02 and electron beam exposure ; photoexcitation of electron-hole'pairs in the GaAs, ; the use of more reactive oxidizers such as N2O; photochemical excitation of the gas-phase molecular species. addition of H2O to the excitation of 02 with a hot filament or a Tesla discharge; and plasma excitation of the 02. Although, many of these techniques can greatly increase the rate of formation of the first few monolayers of oxide, they are generally unsuccessful in the growth of>100 Angstrom thick oxide layers. Further, the oxidation reactions do not result in Ga or As in their highest formal oxidation state, and the resulting oxide is usually deficient in Ga or As. Recently, we have began investigating the oxidation of GaAs with a high kinetic energy beam of atomic oxygen and using x-ray photoemission (XPS) and Raman spectroscopies to characterize the thickness and stoichiometry of the oxide and to probe the oxide/GaAs interface.
Book Synopsis High Temperature Materials Synthesis Without Heat by :
Download or read book High Temperature Materials Synthesis Without Heat written by and published by . This book was released on 1996 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The authors examined thin-film materials-synthesis processes in which chemical reactions are initiated using high-kinetic-energy neutral atomic species instead of high temperatures. The research is aimed at producing device-quality insulating oxide layers on semiconductor materials. Thick, uniform, and fully oxidized insulating layers of unprecedented quality are formed on gallium arsenide by exposure of wafer substrates to a high kinetic-energy ((approximately)3eV) neutral atomic-oxygen beam. The nonthermal oxidation process does not disrupt the crystalline order of the substrate and no detectable elemental arsenic is produced at the oxide/gallium arsenide interface.
Book Synopsis Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2. 8 EV Translational Energy Atomic Oxygen by :
Download or read book Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2. 8 EV Translational Energy Atomic Oxygen written by and published by . This book was released on 1990 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thick (>200 Å), uniform, oxide layers have been produced on GaAs (110) and (100) by reacting the substrate (T{sub s}
Book Synopsis Characterization in Compound Semiconductor Processing by : Yale Strausser
Download or read book Characterization in Compound Semiconductor Processing written by Yale Strausser and published by Momentum Press. This book was released on 2010 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.
Book Synopsis Materials Science and Engineering at the Naval Research Laboratory by : Naval Research Laboratory (U.S.)
Download or read book Materials Science and Engineering at the Naval Research Laboratory written by Naval Research Laboratory (U.S.) and published by . This book was released on with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Hajime Asahi
Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-02-01 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Book Synopsis Photoemission Studies of Oxygen Chemisorption on Gallium Arsenide and Indium Phoshide Surfaces by : Kristine Ann Bertness
Download or read book Photoemission Studies of Oxygen Chemisorption on Gallium Arsenide and Indium Phoshide Surfaces written by Kristine Ann Bertness and published by . This book was released on 1987 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Materials Synthesis and Characterization by : Dale L. Perry
Download or read book Materials Synthesis and Characterization written by Dale L. Perry and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: One area of science that has shown an explosive growth over the last few decades is materials science. Inherently by nature products of both basic and applied research, materials make possible life and society as we know it today. Materials, ranging from ceramics to semiconductors to composites, are such that new ones must not only be designed and made ... they must also be characterized in terms of their physical, chemical, and mechanical properties. Thus, many new state of-the-art techniques involving spectroscopy, microscopy, and other approaches are now routinely used. Modem materials have wide applications in many sectors of technology. Films, for example, constitute an enormous area of materials and are used extensively. Films in tum can be integrated with other systems such as superconducting metal oxides and organic superconductors. Additionally, ceramics can also be synthesized and fabricated as films for different applications. Catalysts, too, can vary widely in both composition and form. The number of applications for catalysts in industry must easily rank as one of the highest number of applications for any class of materials. Catalysis is impOltant for a wide range of activities in industry, from petroleum refining to the synthesis of a large number of industrial feedstock materials. Researchers in this area of materials are constantly trying to unravel new approaches to making better catalysts.
Book Synopsis Dual-Use Space Technology Transfer Conference and Exhibition by :
Download or read book Dual-Use Space Technology Transfer Conference and Exhibition written by and published by . This book was released on 1994 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Perspectives of Microelectronic Materials II: Volume 204 by : L. V. Interrante
Download or read book Chemical Perspectives of Microelectronic Materials II: Volume 204 written by L. V. Interrante and published by . This book was released on 1991-04-23 with total page 626 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Perspectives of Microelectronic Materials by :
Download or read book Chemical Perspectives of Microelectronic Materials written by and published by . This book was released on 1990 with total page 626 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Examination of the Growth and Evaporaton of Gallium Arsenide (001) Using Reflection High Energy Electron Diffraction by : James M. Van Hove
Download or read book Examination of the Growth and Evaporaton of Gallium Arsenide (001) Using Reflection High Energy Electron Diffraction written by James M. Van Hove and published by . This book was released on 1985 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government Reports Announcements & Index by :
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1996-10 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Covalent Ceramics III: Volume 410 by : Aloysius F. Hepp
Download or read book Covalent Ceramics III: Volume 410 written by Aloysius F. Hepp and published by . This book was released on 1996-08-14 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: In years prior, there has been considerable research activity in an exciting class of materials - non-oxide covalent ceramics. These nitrides, carbides, sulfides and related materials have found a wide range of use, from electronics to aerospace/defense, optical sensors and devices, and mechanical/structural applications. In this book, the third in a continuing series, chemists, physicists, ceramists and materials scientists and engineers from around the world come together to share research and highlight recent advances in non-oxide materials. In contrast to its predecessors, the focus of the volume is less on production and fabrication, and more on applications and properties. Topics include: non-oxides for electronics and optoelectronics; preparation of bulk non-oxide ceramics; science of covalent ceramics - bonding, structure and microstructure; fabrication of covalent ceramic thin films; and technology of covalent ceramics - surfaces, composites and processing.
Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 1454 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Gallium Arsenide Using Ion Cluster Beam Technology by : Robert L. Adams
Download or read book Growth of Gallium Arsenide Using Ion Cluster Beam Technology written by Robert L. Adams and published by . This book was released on 1986 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth of single crystal gallium arsenide (GaAs) epitaxial films on high resistivity GaAs substrates has been demonstrated. Films were grown at substrate temperatures from 600C down to 400C with thicknesses from 3000A to 5 micron. Growth rates were typically 150A/minute at all growth temperatures with thickness uniformity of + or - 5% over the sample (typical sample size 0.7in. X 0.7in.). The thickness was measured by a standard cleave and stain method. Single crystal behavior was shown using x-ray diffraction and SEM channeling patterns. Auger analysis was done on the films and showed characteristics comparable to those of the substrate. Hall data taken on the samples found the samples to be n-type, but with very low mobility. The low mobility is the result of defects grown into the structure because of high energy ions impinging on the surface. The energy of the ions was in the range of 100 to 1000 ev because of the small cluster size. The cluster had sizes of 10-50 atoms instead of the desired 500-2000 atoms/cluster. This smaller cluster is likely due to non-uniform heating of the crucibles by the e-beam filament. In addition, the diameter/length of the opening in the nozzle was 1:1. Recent work suggests a 1:10 ratio will allow more interactions and thus enhance the possibility of forming larger clusters. With larger clusters, lower energy per ion will be possible and the native defects will be reduced.
