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Orientational Epitaxy Of Semimetal Thin Films On Semiconductor Surfaces And Halogen Etching Of Semiconductor Surfaces Studied By Scanning Tunneling Microscopy
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Book Synopsis Orientational Epitaxy of Semimetal Thin Films on Semiconductor Surfaces and Halogen Etching of Semiconductor Surfaces Studied by Scanning Tunneling Microscopy by : John Charles Patrin
Download or read book Orientational Epitaxy of Semimetal Thin Films on Semiconductor Surfaces and Halogen Etching of Semiconductor Surfaces Studied by Scanning Tunneling Microscopy written by John Charles Patrin and published by . This book was released on 1993 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1993 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Graduate School Commencement by : University of Minnesota. Graduate School
Download or read book Graduate School Commencement written by University of Minnesota. Graduate School and published by . This book was released on 1993 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1992 with total page 796 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Etching Chemistry of III-V Semiconductors and the Development of Surface Roughness by :
Download or read book Etching Chemistry of III-V Semiconductors and the Development of Surface Roughness written by and published by . This book was released on 1998 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research addresses the need for fundamental information concerning halogen etching of III-V semiconductors. The reactions of halogens with semiconductor surfaces are the fundamental chemical interactions in processes employed for device manufacture. In this work, the reactions of XeF2, Cl2 and I2 with III-V semiconductor surfaces were investigated with synchrotron-based soft x-ray photoelectron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. Fluorine reaction grows films of group III fluorides, which can be used as dielectric materials. Chlorine is the most widely used halogen for dry etching, while iodine has been proposed for use as a "gentle" etchant. We found that, for all of the halogen reactions, the initial adsorption depends on the surface reconstruction, stoichiometry and condition. Some surfaces passivate, while others spontaneously etch at room temperature. The passivated surfaces are well-ordered and covered with approximately one monolayer of adsorbed halogen. The etched surfaces, on the other hand, are considerably rough and atomically disordered. A microscopic model is proposed which assumes that halogen atoms preferentially adsorb onto a group III atom if the surface is initially well-ordered. This microscopic model can explain why certain surfaces etch, while others form ordered overlayers.
Book Synopsis Selective Epitaxy and In-situ Etching Studies on III-V Semiconductor Surfaces by : Egbert Rodríguez Messmer
Download or read book Selective Epitaxy and In-situ Etching Studies on III-V Semiconductor Surfaces written by Egbert Rodríguez Messmer and published by . This book was released on 2000 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Epitaxial Semiconductor Films by : Henry Kressel
Download or read book Characterization of Epitaxial Semiconductor Films written by Henry Kressel and published by Elsevier Science & Technology. This book was released on 1976 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Interfacial and Surface Properties of Thin Fe and Gd Films Grown on W(110) as Studied by Scanning Tunneling Microscopy, Site-resolved Photoelectron Diffraction, and Spin Polarized Photoelectron Diffraction by : Eric Dean Tober
Download or read book The Interfacial and Surface Properties of Thin Fe and Gd Films Grown on W(110) as Studied by Scanning Tunneling Microscopy, Site-resolved Photoelectron Diffraction, and Spin Polarized Photoelectron Diffraction written by Eric Dean Tober and published by . This book was released on 1997 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films by :
Download or read book Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films written by and published by . This book was released on 2016 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides (TMDCs) semiconductors. Lastly, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.
Book Synopsis Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers by : Engang Fu
Download or read book Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers written by Engang Fu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon With Different Buffer Layers" by Engang, Fu, 付恩剛, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled STUDY OF EPITAXIAL THIN FILMS OF YBa Cu O ON 2 3 7-δ SILICON WITH DIFFERENT BUFFER LAYERS submitted by Fu Engang for the degree of Master of Philosophy at The University of Hong Kong in August 2005 Silicon is the most widely used semiconductor in the microelectronic industry. Highly epitaxial thin films of YBa Cu O (YBCO) grown on Si wafers are of 2 3 7-δ special interest for development of superconductor/semiconductor hybrid microelectronic devices and circuits. However, severe interaction between Si and YBCO layer, large mismatch in their lattice constant, and strain due to different thermal expansion often degrade the crystallinity and superconductivity of the grown YBCO layers. In this study, yttria-stabilized zirconia (YSZ) and Eu CuO (ECO) 2 4 were introduced as double buffer layers to improve the growth and properties of the YBCO thin films grown on silicon. Preparation and characterization of epitaxial YBCO/ECO/YSZ/Si multilayer structures were studied. YBCO thin films and the double buffer layers of ECO/YSZ were deposited on the silicon (100) substrate by the pulsed laser deposition (PLD) method. Firstly, the YSZ thin layer was grown epitaxially on silicon (100) substrate to separate YBCO from the Si substrate. Effects of substrate temperature and operating gas pressure on the structure and surface roughness of YSZ thin film were examined and the optimum deposition parameters were determined based on experimental results and comprehensive analysis. X-Ray diffraction (XRD) patterns and rocking curve revealed an epitaxial growth with a perfect c-axis orientation. The YSZ thin films grown on silicon substrate have smooth surface, providing a base on which ECO and YBCO thin film can be grown epitaxially. To further improve the quality of YBCO films, an additional layer of ECO with very stable 214-T' crystal structure was inserted between YBCO and YSZ/Si. The influence of substrate temperature and oxygen gas pressure on the properties of ECO thin films grown on YSZ/Si were experimentally analyzed and the growth conditions were optimized. Finally, the epitaxial YBCO thin films were grown on silicon substrate with double buffer layers of ECO/YSZ. The influences of substrate temperature, oxygen gas pressure and different buffer layers on the properties of YBCO thin films were studied. It was found that the crystal structure, surface roughness and superconductivity of YBCO films could be significantly improved by adding such a double buffer of ECO/YSZ. The quality of the YBCO thin films has been significantly enhanced when compared with that grown on Si with a single YSZ buffer layer and with double buffer layers of Nd CuO (NCO)/YSZ. Such highly 2 4 epitaxial thin films of YBCO grown on silicon should be of great interest for various applications including high-frequency elements, millimeter-wave receivers, and superconducting quantum interference devices. DOI: 10.5353/th_b3637488 Subjects: Thin films Silicon Epitaxy
Book Synopsis Photoelectrochemical Etching of Epitaxial InGaN Thin Films by :
Download or read book Photoelectrochemical Etching of Epitaxial InGaN Thin Films written by and published by . This book was released on 2014 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using narrowband lasers with linewidth less than ~1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale, and ultimately evolves into an ensemble of nanoparticles. As a result, this change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.
Book Synopsis Growth of Epitaxial Co Thin Films on Cu(100) Studied by Scanning Tunneling Microscopy by : Andreas Schmid
Download or read book Growth of Epitaxial Co Thin Films on Cu(100) Studied by Scanning Tunneling Microscopy written by Andreas Schmid and published by . This book was released on 1991 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Oxide Thin Films II: Volume 401 by : James S. Speck
Download or read book Epitaxial Oxide Thin Films II: Volume 401 written by James S. Speck and published by . This book was released on 1996-03-29 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Book Synopsis In Situ Investigation of Surface Chemistry for Chemically Driven Atomic Layer Epitaxy of II-VI Semiconductor Thin Films by : Ming Han
Download or read book In Situ Investigation of Surface Chemistry for Chemically Driven Atomic Layer Epitaxy of II-VI Semiconductor Thin Films written by Ming Han and published by . This book was released on 2000 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Some Metal-and Semiconductor Surfaces Studied by Surface Sensitive Spectroscopies by : Jens Onsgaard
Download or read book Some Metal-and Semiconductor Surfaces Studied by Surface Sensitive Spectroscopies written by Jens Onsgaard and published by . This book was released on 1988 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Aqueous-derived Thin Films and Their Interfacial Interactions with Semiconductor Surfaces by : Milana Cherie Thomas
Download or read book Aqueous-derived Thin Films and Their Interfacial Interactions with Semiconductor Surfaces written by Milana Cherie Thomas and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal oxide systems are well known for their high dielectric constants, which are important for advanced microelectronics applications. The microelectronics industry currently employs vacuum-based techniques, such as chemical vapor deposition (CVD), to deposit metal oxide films. These vapor-phase deposition techniques suffer due to their slow deposition rates and their use of expensive equipment. Additionally, these processes sometimes require the use of harmful source gases and/or generate corrosive by-products. On the other hand, solution-processed thin films fabricated by spin-coating are advantageous because the process is simple, low cost, and scalable. Aqueous solution deposition is particularly attractive because it offers a green alternative to vapor-phase deposition and has been shown to produce uniform thin films by spin coating on hydrophilic silicon surfaces. However, it has been shown that silicon's native oxide can degrade device performance due to its electronic interfacial states. In addition, aqueousderived thin films suffer from poor electrical performance due to mobile water and hydroxyl protons, often requiring very high temperature anneals to mitigate. Such anneals compromise the interface between the film and the silicon substrate, hence the electrical performance. One effective method to control the interface, and thus improve device performance, is to functionalize the semiconductor surface using wet chemistry. Here, we address the concerns of aqueous thin film deposition and present a method for alleviating the issues associated with current silicon-silicon oxide devices. We use wet chemical functionalization to graft selfassembled monolayers (SAMs) onto oxide-free silicon, then spin-coat an aqueous thin film on top of the SAM layer. The chemical stability of the SAM and the changes that occur at the interfaces between the Si/SAM/film stack during film deposition and dehydration are monitored by in situ Fourier transform infrared spectroscopy (FTIR) and ex situ X-ray photoelectron spectroscopy (XPS). The modification of the Si/SAM interface is studied as a function of annealing temperature, with electrical measurements used as a metric to quantify the effectiveness of the SAM layer to alleviate issues of interfacial defects observed for films on silicon oxide. The results are presented in three parts: (1) a dehydration study of aqueous-derived thin films deposited on silicon oxide, (2) the synthesis of a novel SAM interfacial layer tailored to accommodate aqueous, Al-based precursors and (3) a study to quantify the effectiveness, if any, on the SAM interfacial layer through electrical characterization methods. In the first part, we investigate the mechanism for dehydration of aqueous thin films and present a method to enhance the removal of water from the films. Using in situ FTIR, we find that the addition of a protective capping layer can enhance the dehydration of the thin film and prevent water reabsorption for a period of up to 14 days. In the second part, we present hydrosilylation methods to graft SAMs onto oxide-free silicon surfaces. The results show that it is possible to covalently attach the SAMs to silicon, evidenced by the formation of Si-C (detected by XPS) at the interface between the Si and the SAM. Four phosphonic acid-terminated SAMs are prepared and contact angle measurements are used as a metric for evaluating which can best accommodate aqueous spin-coater solutions. To conclude, we investigate the interface between the SAM layer and an aluminum-based thin film derived from aqueous precursor solutions. Current-voltage and capacitance-voltage measurements are used to quantify the effectiveness of the SAM layer.
Book Synopsis Epitaxial growth of Bi_1tn2Sr_1tn2CaCu_1tn2O_1tn8_1tn+_1tn_d63 thin films and photoemission studies of clean surfaces and interfaces formed with Bi_1tn2Sr_1tn2CaCu_1tn2O_1tn8_1tn+_1tn_d63 by : Ralph Seemann
Download or read book Epitaxial growth of Bi_1tn2Sr_1tn2CaCu_1tn2O_1tn8_1tn+_1tn_d63 thin films and photoemission studies of clean surfaces and interfaces formed with Bi_1tn2Sr_1tn2CaCu_1tn2O_1tn8_1tn+_1tn_d63 written by Ralph Seemann and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
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