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Author : Kirk Lee Fry
Publisher :
ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.:/5 (227 download)
Download or read book Organometallic Vapor-phase Epitaxy Process Design for Indium-based III-V Semiconductors written by Kirk Lee Fry and published by . This book was released on 1990 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerald B. Stringfellow
Publisher : Elsevier
ISBN 13 : 0323139175
Total Pages : 417 pages
Book Rating : 4.3/5 (231 download)
Download or read book Organometallic Vapor-Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
Author : Ming-Jiunn Jou
Publisher :
ISBN 13 :
Total Pages : 336 pages
Book Rating : 4.:/5 (225 download)
Download or read book Organometallic Vapor Phase Epitaxial Growth of New III-V Semiconductor Alloys written by Ming-Jiunn Jou and published by . This book was released on 1990 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author :
Publisher :
ISBN 13 :
Total Pages : 14 pages
Book Rating : 4.:/5 (227 download)
Download or read book Novel Precursors for Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1992 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the development of organometallic vapor phase epitaxy (OMVPE) for the growth of III/V semiconductor materials, the choice of group III and group V source molecules has been limited: (1) only trimethyl- and triethyl- group IV and antimony compounds, developed for other applications, were available; (2) the hydrides were the only As and P sources capable of producing device quality material. The hazard posed by the hydride sources, due to their extreme toxicity as well as their storage in high pressure cylinders, was a major motivation for the development of new precursor molecules. This led to the realization that many features of the OMVPE process could be improved by the development of designer source molecules. This paper will emphasize the tertiarybutyl- As, P, and Sb precursors C4H9AsH2, C4H9PH2, and C4H9Sb(CH3)2. However, recent results using alternate In precursors, such as triisopropylindium (C3H7)31n, will be included. The fundamental aspects of the design of source molecules, including pyrolysis routes, will be mentioned; however, the focus is on the practical results obtained using these precursors for the OMVPE growth of III/V semiconductors.
Author :
Publisher :
ISBN 13 :
Total Pages : 784 pages
Book Rating : 4.3/5 (91 download)
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1998 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Diansheng Cao
Publisher :
ISBN 13 :
Total Pages : 298 pages
Book Rating : 4.:/5 (237 download)
Download or read book Organometallic Vapor-phase Epitaxial Growth and Characterization of III-V Semiconductor Alloys Emitting Visible Light written by Diansheng Cao and published by . This book was released on 1991 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Philipp Staudinger
Publisher :
ISBN 13 :
Total Pages : 128 pages
Book Rating : 4.:/5 (119 download)
Download or read book Crystal Phase Engineering in III-V Semiconductor Films written by Philipp Staudinger and published by . This book was released on 2020 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mots-clés de l'auteur: crystal structure ; III-V semiconductors ; indium phosphide (InP) ; wurtzite ; polytypism ; metal-organic vapor phase epitaxy (MOVPE) ; metastable film ; photoluminescence ; transmission electron microscopy (TEM) ; room-temperature lasing.
Author : Changhua Chen
Publisher :
ISBN 13 :
Total Pages : 288 pages
Book Rating : 4.:/5 (214 download)
Download or read book Evaluation of Organometallic As and P Sources for the Growth of III-V Semiconductors in Organometallic Vapor Phase Epitaxy written by Changhua Chen and published by . This book was released on 1990 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Maarten Reinier Leys
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.0/5 ( download)
Download or read book Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures written by Maarten Reinier Leys and published by . This book was released on 1990 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kyushik Hong
Publisher :
ISBN 13 :
Total Pages : 532 pages
Book Rating : 4.3/5 (91 download)
Download or read book Growth of InP-based Materials and Heterostructures Using Metalorganic Vapor Phase Epitaxy for High Frequency Device Applications written by Kyushik Hong and published by . This book was released on 1996 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 15 pages
Book Rating : 4.:/5 (227 download)
Download or read book Comparison of Epitaxial Growth Techniques for III-V Layer Structures written by and published by . This book was released on 1992 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial processes are essential for the growth of III/V alloy semiconductors for electronic and photonic devices. For the growth of elaborately structured materials such as heterojunctions, quantum wells, and superlattices for the fabrication of the most advanced electronic and photonic devices, in particular, vapor phase growth processes have become standard. This paper will deal specifically with the epitaxial (mainly vapor phase) growth of III/V semiconductor materials. The approach taken here is somewhat non-traditional due to the recent hybridization of both precursor molecules and growth techniques. The distinctions between the various growth techniques are traditionally based on the nature of the precursor molecules. Chloride VPE uses chloride group III and and group V molecules and hydride VPE uses hydride group V precursors, while organometallic vapor phase epitaxy uses organometallic group III precursors and either hydride or organometallic group V precursors. Recently, we have developed group III precursors with both organic and Cl radicals on the same molecule. Similarly, group V precursors containing both organic and H radicals have been developed. Thus, it is unclear whether the techniques using such molecules should be called organometallic, chloride, or hydride VPE.
Author : Kevin Yan-Wing Ma
Publisher :
ISBN 13 :
Total Pages : 230 pages
Book Rating : 4.:/5 (254 download)
Download or read book Organometallic Vapor Phase Epitaxial Growth of Bismuth-containing III/V Alloy Semiconductors written by Kevin Yan-Wing Ma and published by . This book was released on 1992 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Steven P. DenBaars
Publisher :
ISBN 13 :
Total Pages : 251 pages
Book Rating : 4.:/5 (227 download)
Download or read book Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition written by Steven P. DenBaars and published by . This book was released on 1988 with total page 251 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic Layer Epitaxy (ALE) is a promising variation of conventional vapor phase epitaxy which achieves uniform growth of ultra-thin epitaxial layers by a self-limiting monolayer by monolayer deposition process. By developing a new regime of metalorganic chemical vapor deposition (MOCVD) growth, in which saturated surface reactions control the growth, it is possible to alternately deposit monolayers of column III and column V elements so that only one monolayer of the III-V compound semiconductor is deposited in every cycle of the deposition. In this thesis, ALE growth of single crystal GaAs, as well as AlAs and GaAs/AlGaAs heterostructures and devices is demonstrated. We have been able to grow extremely uniform ultra-thin epitaxial layers and quantum wells (QWs) with thickness variations of less than one monolayer per cm over an entire sample in an optimized reactor using ALE. The observed dependence of the growth rate on temperature and trimethylgallium flux is modeled by first order adsorption kinetics utilizing measured reaction rate constants. The low temperature photoluminescence (PL) of ALE grown GaAs QW's exhibit narrow line intrinsic luminescence with linewidths comparable to the best reported values by conventional MOCVD. (jhd).
Author : Jen-Wu Huang
Publisher :
ISBN 13 :
Total Pages : 768 pages
Book Rating : 4.:/5 (89 download)
Download or read book Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy written by Jen-Wu Huang and published by . This book was released on 1996 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jyh-Chia Chen
Publisher :
ISBN 13 :
Total Pages : 165 pages
Book Rating : 4.:/5 (256 download)
Download or read book Epitaxial Growth of Indium-based Compound Semiconductors by Metalorganic Chemical Vapor Deposition written by Jyh-Chia Chen and published by . This book was released on 1989 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Capper
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 472 pages
Book Rating : 4.3/5 (91 download)
Download or read book Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials written by Peter Capper and published by Wiley-Interscience. This book was released on 2007-09-04 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
