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Optimization Of A Plasma Doping Technique For Ultra Shallow Junction Formation In Silicon
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Book Synopsis Optimization of a Plasma Doping Technique for Ultra-shallow Junction Formation in Silicon by : David LeRoy Chapek
Download or read book Optimization of a Plasma Doping Technique for Ultra-shallow Junction Formation in Silicon written by David LeRoy Chapek and published by . This book was released on 1995 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Short-time Thermal Processing for Si-based CMOS Devices 2 by : Mehmet C. Öztürk
Download or read book Advanced Short-time Thermal Processing for Si-based CMOS Devices 2 written by Mehmet C. Öztürk and published by The Electrochemical Society. This book was released on 2004 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High Dose Rate Effects in Silicon Using Plasma Source Ion Implatation by : Moon Chun
Download or read book High Dose Rate Effects in Silicon Using Plasma Source Ion Implatation written by Moon Chun and published by . This book was released on 1999 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ultra-shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial CoSi2 as a Dopant Source by : Erin Catherine Jones
Download or read book Ultra-shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial CoSi2 as a Dopant Source written by Erin Catherine Jones and published by . This book was released on 1996 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment by : V. Narayanan
Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment written by V. Narayanan and published by The Electrochemical Society. This book was released on 2009-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Book Synopsis Ultra-shallow Phosphorous Diffusion in Silicon Using Molecular Monolayer Doping by : Astha Tapriya
Download or read book Ultra-shallow Phosphorous Diffusion in Silicon Using Molecular Monolayer Doping written by Astha Tapriya and published by . This book was released on 2017 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Controlled doping of semiconductor material with high atomic accuracy and minimum defects in silicon is needed for next generation nanoscale and solar devices. The molecular monolayer doping (MLD) strategy is a novel technique based on the formation of self-assembled monolayer of dopant –containing molecule on surface of crystalline silicon, followed by rapid thermal annealing. MLD helps to form damage free junctions which are conformal. It is capable of nanometer scale control of dopant introduction and formation of ultra-shallow diffused profile. MLD can be used for conventional planar devices, FinFETs and nanowires, since both bottom-up and top-down approaches are feasible making it highly versatile. It also finds applications in solar cell industry, to fabricate selective emitters and increases the efficiency of the crystalline silicon solar cell along with reduced contact resistance. Phosphorus MLD on p-type silicon is formed using diethyl 1-propylphosphonate (DPP) as dopant source in this work. It involved demonstrating the formation of monolayer on silicon piece and 6-inch wafer. The setup is designed, assembled and implemented successfully to achieve monolayer formation on full wafer. The presence of phosphorous on the surface is detected by Auger electron spectroscopy and confirmed by X-ray photoelectron spectroscopy on the same silicon sample. The phosphorous monolayer on the surface is diffused in the silicon surface using rapid thermal anneal at 1000oC for 180 seconds. The diffusion profile is characterized by Secondary ion mass spectrometry (SIMS), spreading resistance profile and sheet resistance measurements. The result show successful creation of diffusion profile with high surface concentration, junction depth of 20 nm extracted at 1 x 1018 cm-3 base doping and sheet resistance is 920 [ohms]/sq. The total dose of phosphorous in the silicon is dependent on the number of bonds formed using DPP and dose is increased by multiple rounds of MLD and annealing, sheet resistance for double MLD is reduced to 670 [ohms]/sq. N+P junctions are fabricated using MLD and current-voltage characteristics are measured and analyzed using unified model. It is found that the specific contact resistivity of MLD doped wafer is lower than the implanted wafer. It is also reported that MLD doping can be masked by a thin oxide layer giving a possibility of patterned doping."--Abstract.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1996 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optimization of ultra-shallow junctions formed by low-energy ion implantation by : Mark James Craig
Download or read book Optimization of ultra-shallow junctions formed by low-energy ion implantation written by Mark James Craig and published by . This book was released on 1995 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Method for Shallow Junction Formation by :
Download or read book Method for Shallow Junction Formation written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Emerging Materials for Semiconductor Industry by : Young Suh Song
Download or read book Handbook of Emerging Materials for Semiconductor Industry written by Young Suh Song and published by Springer Nature. This book was released on with total page 930 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Doping of Silicone with Boron for Ultra Shallow Junctions Using Rapid Thermal Processing by : Konstantin Georgievich Korablev
Download or read book Doping of Silicone with Boron for Ultra Shallow Junctions Using Rapid Thermal Processing written by Konstantin Georgievich Korablev and published by . This book was released on 1996 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1995 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis ULSI Process Integration 9 by : C. Claeys
Download or read book ULSI Process Integration 9 written by C. Claeys and published by The Electrochemical Society. This book was released on 2015 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Effect of Ion-implantation on Dopant Diffusion in Silicon During Shallow-junction Formation by : Yudong Kim
Download or read book The Effect of Ion-implantation on Dopant Diffusion in Silicon During Shallow-junction Formation written by Yudong Kim and published by . This book was released on 1988 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scaling And Integration Of High-speed Electronics And Optomechanical Systems by : Magnus Willander
Download or read book Scaling And Integration Of High-speed Electronics And Optomechanical Systems written by Magnus Willander and published by World Scientific. This book was released on 2017-04-17 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.
