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Author : Douglas B. Ingerly
Publisher :
ISBN 13 :
Total Pages : 294 pages
Book Rating : 4.:/5 (89 download)
Download or read book Ohmic Contacts to GaN written by Douglas B. Ingerly and published by . This book was released on 2000 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yun-Li Li
Publisher :
ISBN 13 :
Total Pages : 114 pages
Book Rating : 4.:/5 (477 download)
Download or read book Low-resistance Ohmic Contacts to P-type GaN and P-type AlGaN/GaN Superlattices written by Yun-Li Li and published by . This book was released on 2000 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Terry Michael Ake
Publisher :
ISBN 13 :
Total Pages : 136 pages
Book Rating : 4.:/5 (419 download)
Download or read book Ohmic Contacts on GaN written by Terry Michael Ake and published by . This book was released on 1999 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)
Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Author : John Yan
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (89 download)
Download or read book Processing and Characterisation of Ohmic Contacts to GaN. written by John Yan and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hugh O. Pierson
Publisher : William Andrew
ISBN 13 : 081551770X
Total Pages : 363 pages
Book Rating : 4.8/5 (155 download)
Download or read book Handbook of Refractory Carbides & Nitrides written by Hugh O. Pierson and published by William Andrew. This book was released on 1996-12-31 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: Refractory carbides and nitrides are useful materials with numerous industrial applications and a promising future, in addition to being materials of great interest to the scientific community. Although most of their applications are recent, the refractory carbides and nitrides have been known for over one hundred years. The industrial importance of the refractory carbides and nitrides is growing rapidly, not only in the traditional and well-established applications based on the strength and refractory nature of these materials such as cutting tools and abrasives, but also in new and promising fields such as electronics and optoelectronics.
Author : Stephen Pearton
Publisher : Elsevier
ISBN 13 : 0128145226
Total Pages : 510 pages
Book Rating : 4.1/5 (281 download)
Download or read book Gallium Oxide written by Stephen Pearton and published by Elsevier. This book was released on 2018-10-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact
Author : Lars Fredrik Voss
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (664 download)
Download or read book Thermally Stable Ohmic and Schottky Contacts to GaN written by Lars Fredrik Voss and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: This dissertation is focused on the development of Ohmic and Schottky contacts to both nand p-type Gallium Nitride for use in microelectronic and optical devices. The goal is to develop low resistance contacts with greater thermal budgets and superior thermal aging characteristics to those commonly in use today as well as to understand the mechanisms by which these contacts may fail. In addition, p-type Ohmic contacts have been used to fabricate light emitting diodes (LEDs) which display far superior aging properties than those made with conventional Ni/Au contacts. Ohmic contacts to p-GaN were fabricated using a variety of refractory materials. The materials examined were of three basic types: boride, nitride, and the refractory metal Ir. The boride family includes W2B, W2B5, CrB2, ZrB2, and TiB2. The nitrides examined were TaN, TiN, and ZrN. Contacts based on these materials were fabricated using either a GaN//Ni/Au/X/Ti/Au, GaN//X/Ti/Au, or GaN//Ni/X/Au scheme, where X is the refractory material. Contact resistances as low as ~1 x 10-4 ohm/cm2 were consistently achieved after annealing at temperatures from 500-1000°C for 60 s in N2 using these materials for p-GaN with a carrier concentration of ~1 x 1017 cm-3.
Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (455 download)
Download or read book Theoretical and Experimental Approach to Developing Improved Electrical Contacts to GaN. written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The metallurgy and electrical performance of contacts to GaN were examined. Thermodynamic estimates coupled with experimental work revealed clear trends in the nature of the contact metallurgy depending upon the position of the metal in the periodic table. This information was then used to aid in the investigation and design of electrical contacts to GaN. Ohmic contacts to n-GaN, Schottky barriers to n-GaN, and ohmic contacts to p-GaN were fabricated and characterized. These studies resulted in an improved understanding of the mechanism of ohmic contact formation in Al/Ti/n-GaN contacts, along with the development of TiN/Ti/n-GaN and ZrN/Zr/n-GaN ohmic contacts with exceptional thermal stability at 600 deg C and contact resistivities of 6 x 10(exp -6) and 2 x 10(exp -5) ohm.sq cm, respectively, for n = 7 x 10(exp 17) cu cm. Also developed were Re/n-GaN Schottky barrier contacts that were stable upon annealing at 700 deg C with current-voltage and capacitance-voltage barrier heights of 0.82 and 1.06 eV, respectively. For ohmic contacts to p-GaN, a large number of contacts were evaluated. A clear improvement over conventional Au/Ni/p-GaN contacts was provided by electrodeposited Pt/p-GaN and sputtered Pt/Ni/p-GaN contacts, which provided contact resistivities that were lower than Au/Ni/p-GaN contacts by more than a factor of two. An explanation for this improvement was formulated.
![Download Low Resistance Ohmic Contacts to P-type GaN on Semipolar [11 - 22] and Nonpolar [10 - 10] PDF Online Free](https://books.google.com/books/content/images/frontcover/PQZCQwAACAAJ?fife=w200-h370)
Author : Hsun Chih Kuo
Publisher :
ISBN 13 :
Total Pages : 168 pages
Book Rating : 4.:/5 (472 download)
Download or read book Low Resistance Ohmic Contacts to P-type GaN on Semipolar [11 - 22] and Nonpolar [10 - 10] written by Hsun Chih Kuo and published by . This book was released on 2009 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Electrochemical Society
Publisher :
ISBN 13 :
Total Pages : 372 pages
Book Rating : 4.F/5 ( download)
Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Huichan Seo
Publisher :
ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (816 download)
Download or read book Investigation of Ohmic Contacts for GaN-based Power Electronic Devices Using Molecular Beam Epitaxy written by Huichan Seo and published by . This book was released on 2008 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Simon S. Cohen
Publisher : Academic Press
ISBN 13 : 1483217795
Total Pages : 435 pages
Book Rating : 4.4/5 (832 download)
Download or read book Metal – Semiconductor Contacts and Devices written by Simon S. Cohen and published by Academic Press. This book was released on 2014-12-01 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594421
Total Pages : 470 pages
Book Rating : 4.1/5 (195 download)
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Download or read book Ohmic Contacts to Si-implanted and Un-implanted N-type GaN. written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report on ohmic contacts to Si-implanted and un-implanted n-type GaN on sapphire. A ring shaped contact design avoids the need to isolate the contact structures by additional implantation or etching. Metal layers of Al and Ti/Al were investigated. On un-implanted GaN, post metalization annealing was performed in an RTA for 30 seconds in N[sub 2] at 700, 800, and 900 C.A minimum specific contact resistance (r[sub c]) of 1.4[times]10[sup -5][Omega][minus]cm[sup 2] was measured for Ti/Al at an annealing temperature of 800 C. Although these values are reasonably low, variations of 95% in specific contact resistance were measured within a 500[mu]m distance on the wafer. These results are most likely caused by the presence of compensating hydrogen. Specific contact resistance variation was reduced from 95 to 10% by annealing at 900 C prior to metalization. On Si-implanted GaN, un-annealed ohmic contacts were formed with Ti/Al metalization. The implant activation anneal of 1120 C generates nitrogen vacancies that leave the surface heavily n-type, which makes un-annealed ohmic contacts with low contact resistivity possible.
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Download or read book High Temperature Stable W and WSi[x] Ohmic Contacts on GaN and InGaN. written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
