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Numerical Model And Analysis Of Transistors With Polysilicon Emitters
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Book Synopsis Numerical Model and Analysis of Transistors with Polysilicon Emitters by : Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory
Download or read book Numerical Model and Analysis of Transistors with Polysilicon Emitters written by Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory and published by . This book was released on 1985 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bipolar transistor and MOSFET device models by : Kunihiro Suzuki
Download or read book Bipolar transistor and MOSFET device models written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2016-03-02 with total page 587 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.
Book Synopsis The Numerical Simulation of Polysilicon-contacted Emitter Bipolar Transistors by : Susan Margaret Bradley
Download or read book The Numerical Simulation of Polysilicon-contacted Emitter Bipolar Transistors written by Susan Margaret Bradley and published by . This book was released on 1987 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High-Frequency Bipolar Transistors by : Michael Reisch
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Simulation of Semiconductor Devices and Processes by : Siegfried Selberherr
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Book Synopsis A Study of Polysilicon Emitter Transistors by : G. R. Wolstenholme
Download or read book A Study of Polysilicon Emitter Transistors written by G. R. Wolstenholme and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by and published by . This book was released on 1984 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ultra-Fast Silicon Bipolar Technology by : Ludwig Treitinger
Download or read book Ultra-Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Book Synopsis The Modeling and Design Optimization of Polysilicon-emitter Transistors, Including Experimental Verification by : Shuy-Young Yung
Download or read book The Modeling and Design Optimization of Polysilicon-emitter Transistors, Including Experimental Verification written by Shuy-Young Yung and published by . This book was released on 1987 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski
Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Book Synopsis The Proceedings of the International Conference on Semiconductor and Integrated Circuit Technology by : Xiuying Wang
Download or read book The Proceedings of the International Conference on Semiconductor and Integrated Circuit Technology written by Xiuying Wang and published by World Scientific Publishing Company. This book was released on 1986 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Patterning technology; Selective doping techniques; Materials; Rapid thermal annealing; Thin film technology; Amorphous silicon; Superconductor electronics; Advanced device technology; MOS and bipolar technology; Circuit design; Silicon on insulator technologies; Yield/reliability; Process characterization; Materials characterization; Fab operations.
Book Synopsis Design and Realization of Bipolar Transistors by : Peter Ashburn
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Book Synopsis Polysilicon-emitter, Bipolar Junction Transistor, AC Model and Its Use by : Duc M. Nguyen
Download or read book Polysilicon-emitter, Bipolar Junction Transistor, AC Model and Its Use written by Duc M. Nguyen and published by . This book was released on 1987 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Polysilicon Emitter Bipolar Transistors by : K. Kapoor Ashon
Download or read book Polysilicon Emitter Bipolar Transistors written by K. Kapoor Ashon and published by . This book was released on 1983 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Failure Analysis of Integrated Circuits by : Lawrence C. Wagner
Download or read book Failure Analysis of Integrated Circuits written by Lawrence C. Wagner and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: This "must have" reference work for semiconductor professionals and researchers provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits.
Book Synopsis Annual Commencement by : Stanford University
Download or read book Annual Commencement written by Stanford University and published by . This book was released on 1983 with total page 415 pages. Available in PDF, EPUB and Kindle. Book excerpt:
