Novel Iii Nitride Growth By Ultraviolet Radiation Assisted Metal Organic Molecular Beam Epitaxy

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Novel III-Nitride Growth by Ultraviolet Radiation Assisted Metal Organic Molecular Beam Epitaxy

Author : David Chu Pritchett
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (456 download)

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Book Synopsis Novel III-Nitride Growth by Ultraviolet Radiation Assisted Metal Organic Molecular Beam Epitaxy by : David Chu Pritchett

Download or read book Novel III-Nitride Growth by Ultraviolet Radiation Assisted Metal Organic Molecular Beam Epitaxy written by David Chu Pritchett and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: While modern epitaxial methods enable precise, monolayer (ML) control of the thin film deposition process, the complexity of certain device structures is ultimately limited by the capability and cost of the fabrication process. The objective of this work is to develop a pathway toward three-dimensional epitaxy (3DE) - the ability to intentionally and dynamically pattern regions of a film during the deposition process - in order to enable novel device concepts unbound by the traditional device fabrication paradigm. This work pioneers UV-assisted metal organic molecular beam epitaxy (MOMBE) as a particularly selective epitaxy technique to create a pathway toward 3DE of a crucial and topical material system - the III-Nitrides. A novel UV-assisted MOMBE system is developed enabling intense UV irradiation of films during growth. High quality, heavily (unintentionally) carbon-doped GaN is successfully grown by NH3-based MOMBE and for the first time InGaN, AlGaN, and magnesium-doped GaN are demonstrated by NH3-based MOMBE. Intense UV irradiation of films during NH3-based MOMBE significantly enhances photo-desorption of species during the growth process, subsequently affecting the resultant InGaN alloy composition, carbon dopant concentration, or magnesium dopant concentration. A digital micromirror device is introduced to pattern incident UV radiation during InGaN growth, demonstrating that the effects of photoexcitation during MOMBE which have been proposed, discovered, and identified by this thesis indeed can be leveraged to deposit an InGaN film that is compositionally patterned within the growth plane. The results demonstrate that the new approach presented herein is possible for the 3DE of III-Nitrides if additional challenges in practical implementation can be overcome.

Study of III-nitride Growth Kinetics by Molecular-beam Epitaxy

Author : Michael William Moseley
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (858 download)

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Book Synopsis Study of III-nitride Growth Kinetics by Molecular-beam Epitaxy by : Michael William Moseley

Download or read book Study of III-nitride Growth Kinetics by Molecular-beam Epitaxy written by Michael William Moseley and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted an enormous amount of interest because of its properties and applications in both electronics and optoelectronics. Although blue light-emitting diodes have been commercialized based on this success, much less progress has been made in ultraviolet emitters, green emitters, and photovoltaics. This lack of development has been attributed to insufficient structural and electrical material quality, which is directly linked to the growth of the material. The objective of this work is to expand the understanding of III-nitride growth towards the improvement of current device capabilities and the facilitation of novel device designs. :Group-III nitride thin films are grown by molecular-beam epitaxy in a pulsed, metal-rich environment. The growths of nitride binaries and ternaries are observed in situ by transient reflection high-energy electron diffraction (RHEED) intensities, which respond to the behavior of atoms on the growing surface. By analyzing and interpreting these RHEED signatures, a comprehensive understanding of nitride thin film growth is obtained. :The growth kinetics of unintentionally doped GaN by metal-rich MBE are elucidated, and a novel method of in situ growth rate measurement is discovered. This technique is expanded to InN, highlighting the similarity in molecular-beam epitaxy growth kinetics between III-nitride binaries. The growth of Mg-doped GaN is then explored to increase Mg incorporation and electrical activation. The growth of InxGa1-xN alloys are investigated with the goal of eliminating phase separation, which enables single-phase material for use in photovoltaics. Finally, the growth of unintentionally doped and Mg-doped AlGaN is investigated towards higher efficiency light emitting diodes. :These advancements in the understanding of III-nitride growth will address several critical problems and enable devices relying on consistent growth in production, single-phase material, and practical hole concentrations in materials with high carrier activation energies.

The Study of Growth and Characterization of Group III Nitride Semiconductor by RF Plasma-assisted Molecular Beam Epitaxy

Author : 黃志豪
Publisher :
ISBN 13 :
Total Pages : 111 pages
Book Rating : 4.:/5 (896 download)

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Book Synopsis The Study of Growth and Characterization of Group III Nitride Semiconductor by RF Plasma-assisted Molecular Beam Epitaxy by : 黃志豪

Download or read book The Study of Growth and Characterization of Group III Nitride Semiconductor by RF Plasma-assisted Molecular Beam Epitaxy written by 黃志豪 and published by . This book was released on 2004 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Molecular Beam Epitaxy

Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Nitrides with Nonpolar Surfaces

Author : Tanya Paskova
Publisher : John Wiley & Sons
ISBN 13 : 9783527407682
Total Pages : 470 pages
Book Rating : 4.4/5 (76 download)

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Book Synopsis Nitrides with Nonpolar Surfaces by : Tanya Paskova

Download or read book Nitrides with Nonpolar Surfaces written by Tanya Paskova and published by John Wiley & Sons. This book was released on 2008-03-31 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text discusses in detail the present stage of development of nonpolar nitrides, with special emphasis on the three main topics of crystal growth, properties, and device studies. All nonpolar nitride materials and all known growth techniques which are currently under strong investigation are covered.

Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy

Download Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy PDF Online Free

Author : 謝佳和
Publisher :
ISBN 13 :
Total Pages : 122 pages
Book Rating : 4.:/5 (727 download)

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Book Synopsis Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy by : 謝佳和

Download or read book Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy written by 謝佳和 and published by . This book was released on 2009 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growths of III-V Nitride Semiconductors with the Techniques of Metalorganic Vapor Phase Deposition and Molecular Beam Epitaxy

Author : 黃政傑
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (821 download)

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Book Synopsis Growths of III-V Nitride Semiconductors with the Techniques of Metalorganic Vapor Phase Deposition and Molecular Beam Epitaxy by : 黃政傑

Download or read book Growths of III-V Nitride Semiconductors with the Techniques of Metalorganic Vapor Phase Deposition and Molecular Beam Epitaxy written by 黃政傑 and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scientific and Technical Aerospace Reports

Author :
Publisher :
ISBN 13 :
Total Pages : 704 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nitride Semiconductor Light-Emitting Diodes (LEDs)

Author : Jian-Jang Huang
Publisher : Woodhead Publishing
ISBN 13 : 0081019432
Total Pages : 826 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Nitride Semiconductor Light-Emitting Diodes (LEDs) by : Jian-Jang Huang

Download or read book Nitride Semiconductor Light-Emitting Diodes (LEDs) written by Jian-Jang Huang and published by Woodhead Publishing. This book was released on 2017-10-24 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Features new chapters on laser lighting, addressing the latest advances on this topic Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates

Growth and Properties of III-nitride Materials on Different Substrates with CrN Nano-island by Molecular Beam Epitaxy

Author : 劉廣惟
Publisher :
ISBN 13 :
Total Pages : 133 pages
Book Rating : 4.:/5 (828 download)

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Book Synopsis Growth and Properties of III-nitride Materials on Different Substrates with CrN Nano-island by Molecular Beam Epitaxy by : 劉廣惟

Download or read book Growth and Properties of III-nitride Materials on Different Substrates with CrN Nano-island by Molecular Beam Epitaxy written by 劉廣惟 and published by . This book was released on 2012 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of Solid-State Lighting and LEDs

Author : Zhe Chuan Feng
Publisher : CRC Press
ISBN 13 : 1351647644
Total Pages : 968 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Handbook of Solid-State Lighting and LEDs by : Zhe Chuan Feng

Download or read book Handbook of Solid-State Lighting and LEDs written by Zhe Chuan Feng and published by CRC Press. This book was released on 2017-06-12 with total page 968 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.

Nonmagnetic and Magnetic Quantum Dots

Author : Vasilios N. Stavrou
Publisher : BoD – Books on Demand
ISBN 13 : 9535139592
Total Pages : 248 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Nonmagnetic and Magnetic Quantum Dots by : Vasilios N. Stavrou

Download or read book Nonmagnetic and Magnetic Quantum Dots written by Vasilios N. Stavrou and published by BoD – Books on Demand. This book was released on 2018-04-04 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book entitled Nonmagnetic and Magnetic Quantum Dots is divided into two sections. In Section 1, the chapters are related to nonmagnetic quantum dots and their applications. More specifically, exact models and numerical methods have been presented to describe the analytical solution of the carrier wave functions, the quantum mechanical aspects of quantum dots, and the comparison of the latter to experimental data. Furthermore, methods to produce quantum dots, synthesis techniques of colloidal quantum dots, and applications on sensors and biology, among others, are included in this section. In Section 2, a few topics of magnetic quantum dots and their applications are presented. The section starts with a theoretical model to describe the magnetization dynamics in magnetic quantum dot array and the description of dilute magnetic semiconducting quantum dots and their applications. Additionally, a few applications of magnetic quantum dots in sensors, biology, and medicine are included in Section 2.

Dissertation Abstracts International

Author :
Publisher :
ISBN 13 :
Total Pages : 780 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical & Electronics Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 1860 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optoelectronic Devices

Author : M Razeghi
Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)

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Book Synopsis Optoelectronic Devices by : M Razeghi

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Metalorganic Vapor Phase Epitaxy (MOVPE)

Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Handbook of Laser Technology and Applications

Author : Chunlei Guo
Publisher : CRC Press
ISBN 13 : 1000296520
Total Pages : 711 pages
Book Rating : 4.0/5 (2 download)

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Book Synopsis Handbook of Laser Technology and Applications by : Chunlei Guo

Download or read book Handbook of Laser Technology and Applications written by Chunlei Guo and published by CRC Press. This book was released on 2021-06-23 with total page 711 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive handbook gives a fully updated guide to lasers and laser systems, including the complete range of their technical applications. The first volume outlines the fundamental components of lasers, their properties and working principles. The second volume gives exhaustive coverage of all major categories of lasers, from solid-state and semiconductor diode to fiber, waveguide, gas, chemical, and dye lasers. The third volume covers modern applications in engineering and technology, including all new and updated case studies spanning telecommunications and data storage to medicine, optical measurement, defense and security, nanomaterials processing and characterization.