Next Generation Power Factor Correction (PFC) Regulator Based on Silicon Carbide (SiC) Power Devices and New Control Strategy

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (656 download)

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Book Synopsis Next Generation Power Factor Correction (PFC) Regulator Based on Silicon Carbide (SiC) Power Devices and New Control Strategy by :

Download or read book Next Generation Power Factor Correction (PFC) Regulator Based on Silicon Carbide (SiC) Power Devices and New Control Strategy written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As information and semiconductor technologies continue to develop, power supplies for applications such as telecommunications and computer systems are required to have higher power ratings, smaller volumes, and higher transfer efficiencies. The PFC stage, a key component of distributed power systems present in the front end of AC/DC converters, is an excellent target for increasing the power density and efficiency of the power supply, as it contains several large passive components. However, conventional commercial PFC designs are constrained by several limitations that prevent them from achieving the desired high power densities and efficiencies. In this dissertation, multiple techniques have been investigated to improve the power density and power efficiency of PFC boost converters. For a Continuous Conduction Mode (CCM) PFC converter, increasing the switching frequency at which the converter operates can dramatically reduce the volume of the boost inductor, while the EMI filter size can be reduced if the switching frequency is higher than 400kHz. To achieve high frequency operation, cutting edge SiC power devices are promising candidates for implementation into CCM PFC converters operating at switching frequencies into the MHz range due to their small on-state resistance and junction capacitance. Theoretical analysis and experimental results prove that extremely high power density can be obtained in a single phase 1MHz CCM PFC converter with SiC power devices, however, this converterâ€"! efficiency falls short of the 95% efficiency target. A good compromise between high power density and power efficiency is achieved by employing multiphase interleaving architecture and SiC power devices simultaneously. This dissertation proposes novel nonlinear control architecture to simplify the controller design of multiphase interleaved CCM PFC regulators. PFC converters operating in Critical Mode (CRM) achieve high power efficiency by employing soft switching techniques, but.

Next Generation Power Factor Correction (PFC) Based on Silicon Carbide (SiC) Power Devices and New Control Strategy

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ISBN 13 :
Total Pages : 148 pages
Book Rating : 4.:/5 (277 download)

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Book Synopsis Next Generation Power Factor Correction (PFC) Based on Silicon Carbide (SiC) Power Devices and New Control Strategy by : Xiaojun Xu

Download or read book Next Generation Power Factor Correction (PFC) Based on Silicon Carbide (SiC) Power Devices and New Control Strategy written by Xiaojun Xu and published by . This book was released on 2008 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: SiC, PFC, multiphase, interleaving, high frequency.

High Efficiency Power Supply Using New SiC Devices

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Publisher : kassel university press GmbH
ISBN 13 : 3899583027
Total Pages : 159 pages
Book Rating : 4.8/5 (995 download)

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Book Synopsis High Efficiency Power Supply Using New SiC Devices by : Ashot Melkonyan

Download or read book High Efficiency Power Supply Using New SiC Devices written by Ashot Melkonyan and published by kassel university press GmbH. This book was released on 2007 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas

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Publisher : World Scientific
ISBN 13 : 9813237848
Total Pages : 464 pages
Book Rating : 4.8/5 (132 download)

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Book Synopsis Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas by : Pushpakaran Bejoy N

Download or read book Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas written by Pushpakaran Bejoy N and published by World Scientific. This book was released on 2019-03-25 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.

Switching Trajectory Control for High Voltage Silicon Carbide Power Devices with Novel Active Gate Drivers

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ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.:/5 (117 download)

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Book Synopsis Switching Trajectory Control for High Voltage Silicon Carbide Power Devices with Novel Active Gate Drivers by : Shuang Zhao

Download or read book Switching Trajectory Control for High Voltage Silicon Carbide Power Devices with Novel Active Gate Drivers written by Shuang Zhao and published by . This book was released on 2019 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability. However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs with XHV-6 package which are developed by CREE are approaching those of an ideal switch with high dv/dt and di/dt. The fast switching speed of SiC devices introduces challenges for the application since electromagnetic interference (EMI) noise and overshoot voltage can be serious. Also, the insulation should be carefully designed to prevent partial discharge. To address the aforementioned issues, this work investigates the switching behaviors of SiC power MOSFETs with mathematic models and the formation of EMI noise in a power converter. Based on the theoretical analysis, a model-based switching trajectory optimizing three-level active gate driver (AGD) is proposed. The proposed AGD has five operation modes, i.e., faster/normal/slower for the turn-on process and slower/normal for the turn-off process. The availability of multiple operation modes offers an extra degree of freedom to improve the switching performance for a particular application and enables it to be more versatile. The proposed AGD can provide higher switching speed adjustment resolution than the other AGDs, and this feature will allow the proposed AGD to fine tune the switching speed of SiC power devices. In addition, a novel model-based trajectory optimization strategy is proposed to determine the optimal gate driver output voltage by trading the EMI noise against the switching energy losses. For the 10 kV SiC power MOSFET, the detailed design considerations of the proposed AGD are demonstrated in this dissertation. The functionalities of the 3-L AGD are validated through the double pulse tests results with 1.2 kV and 10 kV SiC power MOSFETs.

Power Devices and Integrated Circuits Based on 4H-SiC Lateral JFETs

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ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (667 download)

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Book Synopsis Power Devices and Integrated Circuits Based on 4H-SiC Lateral JFETs by : Ming Su

Download or read book Power Devices and Integrated Circuits Based on 4H-SiC Lateral JFETs written by Ming Su and published by . This book was released on 2010 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide-bandgap semiconductor that has drawn significant research interest for the next-generation power electronics due to its superior electrical properties. Excellent device performance has been repeatedly demonstrated by SiC vertical power devices. However, for lateral power devices that offer the unique advantage of possible monolithic integration of a power electronics system-on-chip, the progress has been limited. This dissertation describes the 4H-SiC vertical-channel lateral JFET (VC-LJFET) technology that provides a suitable solution for power integration applications. Power devices based on this structure have a trenched-and-implanted vertical channel and a carefully designed lateral drift region, enabling normally-off operation with a high-voltage blocking capability. Low-voltage (LV) versions of VC-LJFET feature nearly identical device structures with a reduced drift length, and can be readily fabricated on the same wafer with the power devices. Essential components for a power integrated circuit, such as gate drive buffers, can be thus implemented monolithically on the VC-LJFET technology platform. This dissertation research starts with the process improvement investigation for the TI-JFET structure. Particularly, a novel ohmic contact scheme is developed using Ni to replace the troubling process in TI-VJFETs. The entire process flow of VC-LJFET is then designed and demonstrated in experiments, leading to the world's first demonstration of a normally-off lateral power JFET in SiC. As of today, power JFETs fabricated in this technology are still representing the best-performing lateral power transistors in SiC and silicon. Based on the VC-LJFET structure, low-voltage circuits critical to the power integration applications are investigated. Gate drive buffer provides the interface between low-voltage control circuits and the power device, and is recognized as a key component for an integrated power electronics system. A thorough design, modeling and optimization work on the LJFET-based gate drive circuits is described. These buffer drivers using resistor or transistor loads will enable high-frequency switching of the power LJFETs at megahertz levels. The results achieved in this research strongly suggest the feasibility of SiC power integration technologies in general, as well as the suitability of the SiC VC-LJFET platform for such applications in particular.

Silicon Carbide Power Devices

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Publisher : World Scientific
ISBN 13 : 9812774521
Total Pages : 526 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Totem-pole Power Factor Correction Rectifier with Gallium-Nitride Devices for Telecom Power Supply

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ISBN 13 :
Total Pages : 97 pages
Book Rating : 4.:/5 (112 download)

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Book Synopsis Totem-pole Power Factor Correction Rectifier with Gallium-Nitride Devices for Telecom Power Supply by : Rifat Alam Siddique

Download or read book Totem-pole Power Factor Correction Rectifier with Gallium-Nitride Devices for Telecom Power Supply written by Rifat Alam Siddique and published by . This book was released on 2016 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-bandgap (WBG) semiconductor technology will largely replace silicon switching devices in the active power factor correction (PFC) circuit of a telecom power supply in the near future. Superior electrical characteristics of commercially available Gallium Nitride (GaN) devices make totem-pole PFC a clear winner over competing topologies in terms of efficiency. This thesis focuses on the development of a totem-pole PFC using state-of-the-art GaN devices for next-generation telecom power supplies. A detailed investigation of ac zero-crossings of this topology has successfully identified the rapid fluctuation in voltage across low-frequency MOSFET as the source of common-mode noise. An equivalent circuit accompanied by a set of equations correlate different circuit parameters with the noise generation. Challenges associated with current reversal near zero-crossings of a synchronous totem-pole PFC are studied and a formerly unreported source of common-mode noise generation around ac zero-crossings has been investigated in detail.

A Silicon Carbide Linear Voltage Regulator for High Temperature Applications

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Publisher :
ISBN 13 : 9781267432988
Total Pages : 326 pages
Book Rating : 4.4/5 (329 download)

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Book Synopsis A Silicon Carbide Linear Voltage Regulator for High Temperature Applications by : Javier Antonio Valle Mayorga

Download or read book A Silicon Carbide Linear Voltage Regulator for High Temperature Applications written by Javier Antonio Valle Mayorga and published by . This book was released on 2012 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field. This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option for developing SiC processes due to its relatively simple implementation and yet, a performance acceptable to today's systems applications. This document details the challenges faced and methods needed to design and fabricate the circuit as well as measured data corroborating design simulation results.

Power Factor Controller

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Publisher : LAP Lambert Academic Publishing
ISBN 13 : 9783659222627
Total Pages : 104 pages
Book Rating : 4.2/5 (226 download)

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Book Synopsis Power Factor Controller by : Praveen Kumar

Download or read book Power Factor Controller written by Praveen Kumar and published by LAP Lambert Academic Publishing. This book was released on 2012 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power factor correction (PFC) is a technique of counteracting the undesirable effects of electric loads that create a power factor that is less than one. Power factor correction may be applied either by an electrical power transmission utility to improve the stability and efficiency of the transmission network or correction may be installed by individual electrical customers to reduce the costs charged to them by their electricity supplier. In order to improve transmission efficiency, power factor correction research has become a hot topic. Many control methods for the Power Factor Correction (PFC) have been proposed. This book describes the design and development of a power factor corrector using PIC (Programmable Interface Controller) microcontroller chip. This involves measuring the power factor value from the load using PIC and proper algorithm to determine and trigger sufficient switching capacitors in order to compensate excessive reactive components, thus bringing power factor near to unity.

Analysis of Power Factor Correction Converters

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ISBN 13 :
Total Pages : 442 pages
Book Rating : 4.:/5 (274 download)

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Book Synopsis Analysis of Power Factor Correction Converters by : Thomas Yeh

Download or read book Analysis of Power Factor Correction Converters written by Thomas Yeh and published by . This book was released on 1992 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Power Converter with capacitive input filter is a non-linear load to the Utility AC power lines. There are widely used as Switch-Mode Power Supplies in office equipment applications ranging from Personal Computers to Office Printers and Copiers. The distorted input current waveform extracted by the capacitive input filter of the power converters produces unwanted harmonics which propagates to other line powered equipments. The harmonic pollutes the AC lines and interferes with the operations of sensitive line powered equipments. The distorted current waveform also leads to inefficient utilization of the available power from the AC outlet. This is because the AC line power is transferred to the load only when each frequency component of the line voltage is an in-phase, scaler related quantity with respect to the same frequency component of the extracted current. The problems of poor power factor and harmonic distortion are compounded by the proliferation of Switch-Mode power supplies and the situation is rapidly becoming intolerable. The problem of poor quality input current waveform can be described by two quantitative measurements: Power Factor (pf) and Total Harmonic Distortion (thd). Two general approaches are available to remedy the problem. One approach is to install passive filter networks between the Utility AC lines and the capacitive input filter. The second approach is to design active power processors as dedicated Power Factor Correction (pfc) Converters and installed as the front end to the capacitive input filter to shape the distorted current waveform into waveforms which will yield higher power factor. This Thesis first introduce the general concept of PF and harmonic distortion in Chapter 1. Chapter 2 derive the mathematical description of pf based on the concept of real power (pR) and apparent power (pA). Both sinusoidal and nonsinusoidal cases are studied. For comparison and completeness, two popular passive power factor correction filter networks are analyzed in Chapter 3 to derive the maximum achievable power factor for each network along with the corresponding harmonic distortions. Governing equations are derived and presented graphically as a function of the filter network and load parameters. Chapter 4 provides the analysis of active power factor correction using switch mode Boost Converter. The analysis is carried out for two types of current controllers used as the current modulators for current waveform shaping. The state space averaged modeling approach is employed to derive the mathematical model of the Boost Converter suitable for large signal time domain and small signal frequency domain analysis. The model is further extended to derive the describing equations for the Boost Converter operating as pfc converter. Characteristics of the two current controller functions impacting the pfc operation are studied to expose their relative strength and limitations. The analysis includes the supplementation of the current control loop by an outer voltage control loop to regulate the output capacitor voltage of the pfc converter. The large signal analysis is first investigated for PF, waveform quality and voltage regulation. The small signal analysis follows to extract the frequency domain behavior of the pfc Boost Converter. The limitation of the voltage control bandwidth and its effect on the achievable pf is discussed. Chapter 5 verified the analysis through computer simulation using PSPICE. The original works of Bello based on Berkeley SPICE are modified for PSPICE. The models are extended to implement the PFC control functions and simulated in both large signal time domain and small signal frequency domain. Both the analysis and computer simulation results are compared to a published design of pfc Converter."--Abstract.

Fully Integrated Switching Power Converters in Silicon Carbide Technology

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (135 download)

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Book Synopsis Fully Integrated Switching Power Converters in Silicon Carbide Technology by : Hua Zhang

Download or read book Fully Integrated Switching Power Converters in Silicon Carbide Technology written by Hua Zhang and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) technology offers notable advantages over standard Silicon (Si) technology in terms of its high-voltage and high-temperature capabilities. These advantages make SiC a prime technology for implementing high voltage switching power converters. However, existing power converter solutions utilize SiC technology only for the realization of the high-voltage power switches, while the low-voltage analog and mixed-signal control circuitry continues to be realized in standard CMOS Silicon technology. As a result, multiple chips in different technologies are required, which significantly increases the cost, footprint, and complexity of the power converter. Moreover, in applications where the power converter must tolerate high temperature, such approach would require physical separation between the low-voltage control circuitry implemented in the Si chip and the high-voltage power stage implemented in the SiC chip, which is often unfeasible. In this research work, two versions of fully integrated switching power converters (specifically Buck converters) using a new SiC technology are presented. The Buck converters integrate the low-voltage analog and mixed-signal control circuitry and the high-voltage power stage together in a single SiC wafer, which allows for a single-chip power converter solution. The low-voltage control circuitry includes analog building blocks, such as error amplifiers, comparators, and oscillators, along with digital complementary metal-oxide-semiconductor (CMOS) logic gates, while the high-voltage power stage includes power switches and gate drivers. The differences between two versions of the Buck converter are the circuit topologies applied in the error amplifiers, and comparators and the gate drivers. The SiC process is a new 600V process with 500nm feature size and is being co-developed with the proposed Buck converter design. Therefore, the first goal of the work is to develop accurate models of the low-voltage and high-voltage devices in the technology to facilitate the circuit design and simulation of the converter. The development of these models is based on Level-3 SPICE parameters, which are manually adjusted to fit the Current/Voltage curves produced by the characterization of the devices. Based on these models, all building blocks in the fully integrated Buck converters have been designed and simulated. Furthermore, in order to verify the fully integrated Buck converters after fabrication, the corresponding physical design has to be implemented. Therefore, the parameterized cells of the low-voltage CMOS transistors are created by following the design rule from the foundry to enable automatically generating the devices of the same type while with various dimensions and the standard library consisting of simple digital gates are built to facilitate the digital circuit design in the low-voltage control circuitry of the converters. Based on these Pcells and the standard library, two versions of Buck converter have been laid out and are currently in fabrication. Data from the characterization of devices and the evaluation of the fully integrated Buck converters will be used to further enhance the accuracy of SPICE models and to enlighten the full integration of other power converters and power systems by employing the proposed SiC technology.

Impact of Silicon Carbide Based Power Modules on Mission Profile Efficiency of Automotive Traction Inverters

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ISBN 13 : 9783844074758
Total Pages : pages
Book Rating : 4.0/5 (747 download)

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Book Synopsis Impact of Silicon Carbide Based Power Modules on Mission Profile Efficiency of Automotive Traction Inverters by : Ajay Poonjal Pai

Download or read book Impact of Silicon Carbide Based Power Modules on Mission Profile Efficiency of Automotive Traction Inverters written by Ajay Poonjal Pai and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Digital Control for Interleaved Boost Power Factor Correction (PFC) Rectifiers

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ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.:/5 (891 download)

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Book Synopsis Digital Control for Interleaved Boost Power Factor Correction (PFC) Rectifiers by : Tobias Grote

Download or read book Digital Control for Interleaved Boost Power Factor Correction (PFC) Rectifiers written by Tobias Grote and published by . This book was released on 2014 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

On a Future for Silicon Carbide in Power Electronics Applications

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ISBN 13 :
Total Pages : 100 pages
Book Rating : 4.:/5 (958 download)

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Book Synopsis On a Future for Silicon Carbide in Power Electronics Applications by : Levi Jason Gant

Download or read book On a Future for Silicon Carbide in Power Electronics Applications written by Levi Jason Gant and published by . This book was released on 2016 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based MOSFETs and IGBTs have long been the premiere options for semiconductor switches in power converter applications. However, each of these Si based device structures has limitations that constrain the performance capabilities of their intended applications. The recently commercialized SiC MOSFET allows for optimized application designs that are not constrained by the limitations of Si semiconductor switches as in traditional designs. This thesis will explore the device properties of SiC MOSFETs and compare them to the properties of Si MOSFETs and Si IGBTs. Device characterization methods for experimentally determining switching losses and conduction losses will be presented, along with special considerations to be made when dealing with wide band-gap devices. In order to demonstrate SiC MOSFETs system level optimization opportunities, this thesis will present a hard-switched 5 kW DC-to-DC converter that leverages the SiC devices in question to reach a system level efficiency of 99%. This converter will also be used as a platform to perform a head-to-head comparison of Si IGBTs and SiC MOSFETs in terms of overall system efficiency.

Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter

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ISBN 13 :
Total Pages : 276 pages
Book Rating : 4.:/5 (11 download)

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Book Synopsis Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter by : Zheyu Zhang

Download or read book Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter written by Zheyu Zhang and published by . This book was released on 2015 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt: The emerging wide band-gap, silicon carbide (SiC) power devices greatly improve the switching performance due to their inherent fast switching capability. However, the high switching-speed performance makes their switching behavior become more susceptible to parasitics of the application circuit. In the end, unlike the excellent switching performance of SiC devices tested in manufacturer' datasheets, the observed switching performance in actual power converters is almost always worse. This dissertation aims at characterization and realization of high switching-speed capability of SiC devices in one of the most widely used converter types, the voltage source converter (VSC). To evaluate the fast dynamic characteristics of SiC devices with high fidelity, a methodology of switching performance characterization is summarized. The assessed switching loss is highly sensitive to V−I timing alignment and cross-talk. A practical method is proposed to cope with these issues for accurate switching loss evaluation. Based on the methodology of switching performance characterization, limitations and impact factors of switching performance of SiC devices in VSC are explored. Cross-talk, turn-on overvoltage, and parasitics of inductive loads are identified as the "killer" impact factors. To suppress cross-talk, intelligent gate drivers are designed to be capable of tuning the gate voltage and gate resistance during different switching transients for both devices in a phase-leg. The spurious gate voltage induced by cross-talk can be limited, leading to the improved switching performance with fast switching speed and low switching losses. To mitigate the turn-on over-voltage and parasitic ringing, the placement of gate drivers, devices and power stage and layout design for SiC devices with TO package are proposed and implemented, enabling 30% power loop and common source inductance reduction. To decouple the interaction between devices and inductive load, a dedicated auxiliary filter is introduced to reshape the inductive load's high frequency impedance, allowing the switching behavior to become as excellent as that tested by the optimally-designed inductor. In the end, a SiC based three-phase VSC fed motor drives are built by using the knowledge and techniques developed above. It shows that switching behaviors in VSC have nearly identical performance as that characterized in the optimally-designed switching test circuit.

Power Factor Correction

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ISBN 13 :
Total Pages : 65 pages
Book Rating : 4.:/5 (11 download)

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Book Synopsis Power Factor Correction by : Christelle Samaha

Download or read book Power Factor Correction written by Christelle Samaha and published by . This book was released on 2012 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: