Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
New Measurement Of The Velocity Field Characteristic Of Gaas
Download New Measurement Of The Velocity Field Characteristic Of Gaas full books in PDF, epub, and Kindle. Read online New Measurement Of The Velocity Field Characteristic Of Gaas ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Measurement of the Velocity-field Characteristic of Gallium Arsenide by : Jacques Germain Ruch
Download or read book Measurement of the Velocity-field Characteristic of Gallium Arsenide written by Jacques Germain Ruch and published by . This book was released on 1967 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transport properties of the electrons in GaAs have been investigated; i.e., the absolute value of the electron drift velocity, the diffusion coefficient, and the trapping cross-section has been measured for the first time as a function of the electric field. The specimen used in this experiment consists of a slab of semi-insulating boat-grown GaAs. Thin contacts were evaporated on each face; one, the cathode contact, less than 1000A thick, forms the noninjecting Schottky-barrier. The other, the anode, is ohmic. A 1 microsecond voltage pulse is placed across the diode and produces an essentially uniform electric field within it. An electron beam was pulsed on for less than 0.1 nsec during the voltage pulse. The experimental results are in excellent agreement with the Butcher-Fawcett theory, with a low field mobility of 7500 sq cm/V-sec, a threshold field of 3300 V/cm and an initial negative mobility of 2600 sq cm/V-sec. (Author).
Book Synopsis Advances in Imaging and Electron Physics by : Peter W. Hawkes
Download or read book Advances in Imaging and Electron Physics written by Peter W. Hawkes and published by Academic Press. This book was released on 2019-05-11 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Imaging and Electron Physics, Volume 210, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains. Sections in this new release cover Electron energy loss spectroscopy at high energy losses, Examination of 2D Hexagonal Band Structure from a Nanoscale Perspective for use in Electronic Transport Devices, and more.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA by : Gerald B. Stringfellow
Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-25 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Book Synopsis Microwave Semiconductor Devices by : Sigfrid Yngvesson
Download or read book Microwave Semiconductor Devices written by Sigfrid Yngvesson and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.
Book Synopsis Annual Index of Reports for 1969 by :
Download or read book Annual Index of Reports for 1969 written by and published by . This book was released on 1970 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Radiation Detectors by : Alan Owens
Download or read book Semiconductor Radiation Detectors written by Alan Owens and published by CRC Press. This book was released on 2019-05-31 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material
Book Synopsis Very Large Scale Integration (VLSI) by : D.F. Barbe
Download or read book Very Large Scale Integration (VLSI) written by D.F. Barbe and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Even elementary school students of today know that electronics can do fan tastic things. Electronic calculators make arithmetic easy. An electronic box connected to your TV set provides a wonderful array of games. Electronic boxes can translate languages! Electronics has even changed watches from a pair of hands to a set of digits. Integrated circuit (IC) chips, which use transistors to store information in binary form and perform binary arithmetic, make all of this possible. In just a short twenty years, the field of inte grated circuits has progressed from chips containing several transistors performing simple functions such as OR and AND functions to chips presently available which contain thousands of transistors performing a wide range of memory, control and arithmetic functions. In the late 1970's Very Large Scale Integration (VLSI) caught the imagin ation of the industrialized world. The United States, Japan and other coun tries now have substantial efforts to push the frontier of microelectronics across the one-micrometer barrier and into sub-micrometer features. The achievement of this goal will have tremendous impl ications, both technolo gical and economic for the countries involved.
Book Synopsis The Physics of the Two-Dimensional Electron Gas by : J.T. Devreese
Download or read book The Physics of the Two-Dimensional Electron Gas written by J.T. Devreese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1986 Advanced Study Institute on "The Physics of the two-Dimen sional Electron Gas" took place at the Conference Centre liTer Helme", close to Oostende (Belgium), from June 2 till 16, 1986. We were motivated to organize this Advanced Study Institute in view of the recent experimental and theoretical progress in the study of the two-dimensional electron gas. An additional motivation was our own theore tical interest in cyclotron resonance in two-dimensional electron systems at our institute. It is my pleasure to thank several instances and people who made this Advanced Study Institute possible. First of all, the sponsor of the Advanced Study Institute, the NATO Scientific Committee. Furthermore, the co sponsors: Agfa Gevaert, Bell Telephone Mfg. Co. N.V., Burroughs Belgium. Control Data. Digital Equipment Corporation, Esso Belgium. European Research Office (USA). Kredietbank. National Science Foundation (USA). Special thanks are due to the members of the Program Committee and the members of the Organizing Committee. I would also like to thank Mrs. H. Evans for typing assistance.
Book Synopsis Selected Works of Professor Herbert Kroemer by : C. K. Maiti
Download or read book Selected Works of Professor Herbert Kroemer written by C. K. Maiti and published by World Scientific. This book was released on 2008 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Information technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature OCo something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students."
Book Synopsis Gallium Arsenide Digital Circuits by : Omar Wing
Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
Book Synopsis Ultrafast All-Optical Signal Processing Devices by : Dr. Hiroshi Ishikawa
Download or read book Ultrafast All-Optical Signal Processing Devices written by Dr. Hiroshi Ishikawa and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor-based Ultra-Fast All-Optical Signal Processing Devices –a key technology for the next generation of ultrahigh bandwidth optical communication systems! The introduction of ultra-fast communication systems based on all-optical signal processing is considered to be one of the most promising ways to handle the rapidly increasing global communication traffic. Such systems will enable real time super-high definition moving pictures such as high reality TV-conference, remote diagnosis and surgery, cinema entertainment and many other applications with small power consumption. The key issue to realize such systems is to develop ultra-fast optical devices such as light sources, all-optical gates and wavelength converters. Ultra-Fast All-Optical Signal Processing Devices discusses the state of the art development of semiconductor-based ultrafast all-optical devices, and their various signal processing applications for bit-rates 100Gb/s to 1Tb/s. Ultra-Fast All-Optical Signal Processing Devices: Provides a thorough and in-depth treatment of the most recent achievements in ultrafast all-optical devices Discusses future networks with applications such as HD-TV and super-high definition moving screens as a motivating background for devices research Covers mode-locked semiconductor lasers, electro-absorption modulator based 160Gb/s signal sources, SOA based symmetric Mach-Zehnder type all-optical gates, intersubband transition gate device, and more Explains the technical issues behind turning the ultra-fast optical devices into practical working tools Examples of above 160Gb/s transmission experiments Discusses future prospects of the ultra-fast signal processing devices This invaluable reference will provide device researchers and engineers in industry, researchers at universities (including graduate students, and post doctorial researchers and professors) and research institutes with a thorough understanding of ultrahigh bandwidth optical communication systems. Device and communication market watchers will also find this book useful.
Book Synopsis Delta-doping of Semiconductors by : E. F. Schubert
Download or read book Delta-doping of Semiconductors written by E. F. Schubert and published by Cambridge University Press. This book was released on 1996-03-14 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.
Book Synopsis Electronic Processes in Unipolar Solid-state Devices by : Dan Dascălu
Download or read book Electronic Processes in Unipolar Solid-state Devices written by Dan Dascălu and published by . This book was released on 1977 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hot Carriers in Semiconductors by : J. Shah
Download or read book Hot Carriers in Semiconductors written by J. Shah and published by Elsevier. This book was released on 2013-10-22 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive account of the latest developments in the rapidly expanding area of Semiconductor Technology. Main topics covered include real space transfer/heterostructures, ultrafast studies, optical studies, transport theory, devices, ballistic transport, scattering processes and hot phonons, tunnelling, far infrared and magnetic field studies and impact ionization/noise/chaos. Other aspects include the use of femtosecond lasers in investigating transient hot carrier effects on femtosecond timescales, magnetotransport and carrier-carrier interactions.
Book Synopsis Science and Technology of Millimetre Wave Components and Devices by : V.E. Lyubchenko
Download or read book Science and Technology of Millimetre Wave Components and Devices written by V.E. Lyubchenko and published by CRC Press. This book was released on 2001-11-29 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this comprehensive book, all aspects of Millimeter Waves (MMWs) are explored with an emphasis on the fundamental aspects of the associated physical phenomena. Each chapter provides a review of the main aspects of the subject, including: fundamental limitations and prospects of semiconductor device application in MMW radio systems; multi-element arrays of semiconductor devices in MMW transceivers; active MMW dielectric waveguides; crystal growth processes in thin film Au-GaAs contact performance for MMW devices; local nonuniformities and potential patches at the interfaces of thin film structures in MMW semiconductor devices; and low-loss dielectric materials for MMW components. The Science and Technology of Millimeter Wave Components and Devices will be invaluable to researchers, university lecturers, industrial laboratories and medical institutions concerned with both the scientific and technological advances in the millimeter wave components and devices.
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
