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Neutron Transmutation Doped Silicon
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Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Book Synopsis Neutron Transmutation Doping in Semiconductors by : J. Meese
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Book Synopsis Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication by : D. R. Meyers
Download or read book Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication written by D. R. Meyers and published by . This book was released on 1980 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron Transmutation Doping of Semiconductor Materials by : Robert D. Larrabee
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by . This book was released on 2014-01-15 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron Transmutation Doping of Silicon at Research Reactors by : International Atomic Energy Agency
Download or read book Neutron Transmutation Doping of Silicon at Research Reactors written by International Atomic Energy Agency and published by . This book was released on 2012 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the worlds research reactor facilities in this domain is included, featuring their irradiation capabilities, associated production capacities and processing.
Book Synopsis Fabrication of Silicon Microcircuits by Neutron Transmutation Doping by : Carl N. Klahr
Download or read book Fabrication of Silicon Microcircuits by Neutron Transmutation Doping written by Carl N. Klahr and published by . This book was released on 1966 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors by : D. Alexiev
Download or read book Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors written by D. Alexiev and published by . This book was released on 1987 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer. This book was released on 1981-12-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Book Synopsis Fabrication of Semiconductor Devices by Neutron Transmutation Doping by :
Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962-12 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron transmutation doped silicon by : J. Evans
Download or read book Neutron transmutation doped silicon written by J. Evans and published by . This book was released on 1990 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Infrared Investigation of Neutron Transmutation Doped Silicon by : Douglas E. Benson
Download or read book An Infrared Investigation of Neutron Transmutation Doped Silicon written by Douglas E. Benson and published by . This book was released on 1986 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis EPR Investigation of Neutron Transmutation Doped Silicon: Boron by : Tuan Nang Pham
Download or read book EPR Investigation of Neutron Transmutation Doped Silicon: Boron written by Tuan Nang Pham and published by . This book was released on 1982 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication by : D. R. Meyers
Download or read book Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication written by D. R. Meyers and published by . This book was released on 1980 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Annealing Study of Neutron Transmutation Doped Silicon: Boron by : Jeffrey B. Watson
Download or read book An Annealing Study of Neutron Transmutation Doped Silicon: Boron written by Jeffrey B. Watson and published by . This book was released on 1982 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Infrared Spectroscopy of Neutron Transmutation Doped Silicon: Gallium by : John J. Kainer
Download or read book Infrared Spectroscopy of Neutron Transmutation Doped Silicon: Gallium written by John J. Kainer and published by . This book was released on 1985 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Production of Detector-Grade Silicon by Neutron Transmutation Doping by : Wv Ammon
Download or read book Production of Detector-Grade Silicon by Neutron Transmutation Doping written by Wv Ammon and published by . This book was released on 1984 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: High ohmic n-type silicon was produced from over-compensated, neutron transmutation doped P-type silicon. It was found that compensation levels of even more 70 % do not lead to the formation of p/n junctions across the wafer so that resistivities of up to 10 KOhmcm can be produced on a fairly reliable basis. The properties of NTD and conventionally doped silicon as well as their detector suitability are compared.
