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Negative Capacitance In Ferroelectric Materials
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Book Synopsis Negative Capacitance in Ferroelectric Materials by : Michael Hoffmann
Download or read book Negative Capacitance in Ferroelectric Materials written by Michael Hoffmann and published by BoD – Books on Demand. This book was released on 2020-09-15 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.
Book Synopsis Ferroelectricity in Doped Hafnium Oxide by : Uwe Schroeder
Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Book Synopsis Design and Characterization of Ferroelectric Negative Capacitance by : Korok Chatterjee
Download or read book Design and Characterization of Ferroelectric Negative Capacitance written by Korok Chatterjee and published by . This book was released on 2018 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of the thermal distribution of electrons in a semiconductor, modern transistors cannot be turned on more sharply than 60 mV of gate voltage for an order of magnitude increase in drain current, the so-called ”Boltzmann tyranny.” This results in an inability to reduce supply voltage, increasing power dissipation in advanced complementary metal- oxide-semiconductor (CMOS) technologies, which threatens the continuation of exponential transistor scaling, also known as Moore’s Law. For this reason, there has been a push in the device research community to invent novel steep swing devices. Negative capacitance in ferroelectric materials was proposed in 2008 by Salahuddin and Datta to provide voltage amplification without needing to design a totally new device. A negative gate capacitance would step-up the applied gate voltage at the semiconductor channel, causing the surface potential to rise faster than the gate voltage, lowering the subthreshold slope below 60 mV/decade. In this work, we attempt to characterize the charge-voltage characteristics of ferroelectrics biased into the negative capacitance regime. Although negative capacitance was experimentally demonstrated in 2010, significant challenges have remained to the practical realization of negative capacitance field-effect transistors (FETs). First, we investigate negative capacitance in an isolated ferroelectric capacitor, and show that the negative capacitance states can be directly observed during switching. Careful analysis of the switching dynamics and phase-field modeling show that the signature of negative capacitance arises from the accelerating growth of domain walls, when an increasing volume fraction of the ferroelectric is depolarized. Although this offers insight into the origins of negative capacitance and help to establish its existence scientifically, it does not address the problem of design. A primary concern is the speed of polarization response, which should be on the order of 1 picosecond or less in order to maintain circuit performance. By analyzing the electromagnetic absorption spectrum of hafnium oxide, the primary candidate for CMOS integration, we are able to estimate the intrinsic delay time as being on the order of 270 fs. Next, in order to maximize the amplification and provide adequate margins for hysteresis-free operation, it is necessary to understand how coupling of the ferroelectric material to the interfacial oxide and semiconductor affects its behavior, and to be able to predict what values of negative capacitance will be realized for a certain material and geometry. This is the problem of capacitance matching, which we aim to solve by using the underlying transistor itself as a charge sensor. By calibrating the drain current to the surface potential in reference devices, we may ascertain the characteristics of the ferroelectric in the negative capacitance devices. This is first carried out with an epitaxial ferroelectric capacitor externally connected to the gate of pre-fabricated Fin-FETs. Following this, we describe the development of an in-house fabrication process using silicon-on-insulator substrates, which allows for simple and efficient process flows. Then, we describe the characterization of these devices, including quasistatic and low-frequency current-voltage (I-V) and capacitance voltage (C-V) measurements, a fast pulse-gated I-V measurement, and an excursion into the memory characteristics of our fabricated FETs. Finally, we discuss efforts to build a computational model of our devices from which we can extract the ferroelectric characteristics needed for predictive design.
Book Synopsis Collected Papers of L.D. Landau by : D. Ter Haar
Download or read book Collected Papers of L.D. Landau written by D. Ter Haar and published by Elsevier. This book was released on 2013-10-22 with total page 859 pages. Available in PDF, EPUB and Kindle. Book excerpt: Collected Papers of L. D. Landau brings together the collected papers of L. D. Landau in the field of physics. The discussion is divided into the following sections: low-temperature physics (including superconductivity); solid-state physics; plasma physics; hydrodynamics; astrophysics; nuclear physics and cosmic rays; quantum mechanics; quantum field theory; and miscellaneous works. Topics covered include the intermediate state of supraconductors; the absorption of sound in solids; the properties of metals at very low temperatures; and production of showers by heavy particles. This volume is comprised of 100 chapters and begins with Landau's paper on the theory of the spectra of diatomic molecules, followed by his studies on the damping problem in wave mechanics; quantum electrodynamics in configuration space; electron motion in crystal lattices; and the internal temperature of stars. Some of Landau's theories, such as those of stars, energy transfer on collisions, phase transitions, and specific heat anomalies are discussed. Subsequent chapters focus on the structure of the undisplaced scattering line; the transport equation in the case of Coulomb interactions; scattering of light by light; and the origin of stellar energy. This book will be a valuable resource for physicists as well as physics students and researchers.
Book Synopsis Negative Capacitance Field Effect Transistors by : Young Suh Song
Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Book Synopsis Ferroelectric Field Effect Transistors by : Victoria Chen
Download or read book Ferroelectric Field Effect Transistors written by Victoria Chen and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, there has been an increasing number of issues associated with the continued Metal Oxide Semiconductor Field Effect Transistor (MOSFET) scaling. As feature lengths shrink down to atomic sizes, problems with power consumption, heat dissipation, and quantum effects become more prevalent. The unique properties of ferroelectric materials and their ability to display a negative differential capacitance make them a promising candidate for the use in future transistor technology, and a potential successor to traditional silicon CMOS devices. By placing a ferroelectric material layer in place of the dielectric layer of a MOSFET, it is possible to achieve a subthreshold slope lower than the typical 60 mV/dec limit. This device is called a ferroelectric field effect transistor (FerroFET). In this work, we develop a computational model based on the Landau-Devonshire theory to extract Landau coefficients from polarization-voltage data of a ferroelectric capacitor and simulate the current-voltage behavior of a FerroFET. We computationally demonstrate the gains of FerroFETs over conventional CMOS devices and explore properties of various ferroelectric materials. These FerroFETs have great potential for use in low power applications and could greatly revolutionize the current semiconductor industry.
Book Synopsis Physics of Ferroelectrics by : Karin M. Rabe
Download or read book Physics of Ferroelectrics written by Karin M. Rabe and published by Springer Science & Business Media. This book was released on 2007-07-20 with total page 395 pages. Available in PDF, EPUB and Kindle. Book excerpt: The past two decades have witnessed revolutionary breakthroughs in the understanding of ferroelectric materials, both from the perspective of theory and experiment. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.
Download or read book Polar Oxides written by Rainer Waser and published by John Wiley & Sons. This book was released on 2006-03-06 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here, more than 20 experts from leading research institutes around the world present the entire scope of this rapidly developing field. In so doing, they cover a wide range of topics, including the characterization and investigation of structural, dielectric and piezoelectric properties of ceramic materials, a well as phase transitions, electrical and optical properties and microscopic investigations. Another feature is a complete profile of the properties of polar oxides -- from their proof to their latest applications. Throughout, the authors review, discuss and assess the material properties with regard to new and advanced characterization and imaging techniques. For physicists, physicochemists, semiconductor and solid state physicists, materials scientists, and students of chemistry and physics.
Book Synopsis Principles and Applications of Ferroelectrics and Related Materials by : M. E. Lines
Download or read book Principles and Applications of Ferroelectrics and Related Materials written by M. E. Lines and published by Oxford University Press. This book was released on 2001-02 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a standard work on ferroelectrics.
Book Synopsis Compact Modeling by : Gennady Gildenblat
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Book Synopsis 2021 IEEE 21st International Conference on Nanotechnology (NANO) by : IEEE Staff
Download or read book 2021 IEEE 21st International Conference on Nanotechnology (NANO) written by IEEE Staff and published by . This book was released on 2021-07-28 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanofabrication Nanotools Nanomaterials Nanomedicine Nanoenergy Nanoplasmonics Nanoelectronics Nanosensors & Nanoactuators Nanomanufacturing Nanoscale Science Characterization and Modeling Sustainable electronics and abundant nanomaterials from natural sources Bioelectronics Stretchable electronics Healable materials 2D Materials Carbon nanostructures Energy Harvesting, Storage & Management Nanosensors & Actuators Nano enabled Smart Things Neuromorphic Circuits & Architectures Emerging Research Devices & Architectures
Book Synopsis Ferroelectric Thin Films by : Masanori Okuyama
Download or read book Ferroelectric Thin Films written by Masanori Okuyama and published by Springer Science & Business Media. This book was released on 2005-02-22 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Download or read book Ferroelectrics written by Mickaël Lallart and published by BoD – Books on Demand. This book was released on 2011-08-23 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.
Book Synopsis A Journey of Embedded and Cyber-Physical Systems by : Jian-Jia Chen
Download or read book A Journey of Embedded and Cyber-Physical Systems written by Jian-Jia Chen and published by Springer Nature. This book was released on 2020-07-30 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Open Access book celebrates Professor Peter Marwedel's outstanding achievements in compilers, embedded systems, and cyber-physical systems. The contributions in the book summarize the content of invited lectures given at the workshop “Embedded Systems” held at the Technical University Dortmund in early July 2019 in honor of Professor Marwedel's seventieth birthday. Provides a comprehensive view from leading researchers with respect to the past, present, and future of the design of embedded and cyber-physical systems; Discusses challenges and (potential) solutions from theoreticians and practitioners on modeling, design, analysis, and optimization for embedded and cyber-physical systems; Includes coverage of model verification, communication, software runtime systems, operating systems and real-time computing.
Book Synopsis Ferroelectric Thin Films by : Carlos Paz de Araujo
Download or read book Ferroelectric Thin Films written by Carlos Paz de Araujo and published by Taylor & Francis. This book was released on 1996 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Book Synopsis The Applicability of Ferroelectrics for Analog and Digital Transistor Applications by : Zhi Cheng Jason Yuan
Download or read book The Applicability of Ferroelectrics for Analog and Digital Transistor Applications written by Zhi Cheng Jason Yuan and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: As transistors scale to ever smaller dimensions, power density becomes an increasingly important issue in integrated circuit (IC) design. Recently, negative capacitance field-effect transistors (NCFETs), realized by stacking ferroelectric material on top of conventional gate oxides, have been proposed to reduce power consumption in modern aggressively scaled devices. The negative capacitance of these ferroelectric materials provide voltage amplification to the transistor in order to reduce the subthreshold swing (SS), which would reduce the active power consumption of the device via a reduction of the supply voltage. Beyond reduction of power consumption for individual transistors, the unique negative capacitance behavior in these ferroelectric materials also offers a vast array of options in modern IC design. As a result, ferroelectric materials are an exciting area of research. The current state-of-the-art modeling approach for the dynamics of ferroelectric materials is via the Landau-Khalatnikov (LK) equation. In this work, we implement a multi-domain improvement upon the LK equation and combine it with Cadence circuit simulations to model and predict the characteristics of NCFETs and other ferroelectric devices. In the first stage of this work, we calibrate our multi-domain LK model to experimental results to show a very strong match. Using this calibrated model, we examine the potential speed limitations of NCFETs and identify the requirement on the viscosity parameter of the ferroelectric materials to provide sub-picosecond rise time required for modern transistors. In the second stage, we propose a new measurement technique for extracting the LK parameters of a ferroelectric material. We demonstrate via Cadence circuit simulation that this new measurement technique is able to accurately extract all LK parameters, including the viscosity parameter, which is difficult to extract using standard techniques. In the third stage, we propose a new application for ferroelectric materials to increase the unity-current-gain frequency ?? of a transistor. By placing the ferroelectric in parallel with the FET gate, the negative capacitance of the ferroelectric cancels the positive gate capacitance of the FET, which in turn increases the ?? . This new application offerroelectrics opens new possibilities for IC design. Overall, this work improves the understanding of ferroelectric materials pertaining to their applications in IC design, providing critical information for the electron device community as it continues to explore methods to advance the performance of nanoscale electronics into the 2030s and beyond, the current horizon of the International Roadmap for Devices and Systems.
Book Synopsis Handbook of Emerging Materials for Semiconductor Industry by : Young Suh Song
Download or read book Handbook of Emerging Materials for Semiconductor Industry written by Young Suh Song and published by Springer Nature. This book was released on with total page 930 pages. Available in PDF, EPUB and Kindle. Book excerpt:
