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Narrow Gap Semiconductors
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Download or read book Narrow-Gap Semiconductors written by and published by Springer. This book was released on 2006-04-11 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Narrow-gap Semiconductor Photodiodes by : Antoni Rogalski
Download or read book Narrow-gap Semiconductor Photodiodes written by Antoni Rogalski and published by SPIE Press. This book was released on 2000 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Book Synopsis Narrow Gap Semiconductors Physics and Applications by : W. Zawadzki
Download or read book Narrow Gap Semiconductors Physics and Applications written by W. Zawadzki and published by Springer. This book was released on 1980-10-01 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the International Summer School, held in Nimes, France, September, 3-15, 1979
Book Synopsis Narrow Gap Semiconductors by : Junichiro Kono
Download or read book Narrow Gap Semiconductors written by Junichiro Kono and published by CRC Press. This book was released on 2006-05-25 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.
Book Synopsis Applied Solid State Science by : Raymond Wolfe
Download or read book Applied Solid State Science written by Raymond Wolfe and published by Academic Press. This book was released on 2013-10-22 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through insulating thin films. The book describes the basic physics of carrier injection; energy transfer and recombination mechanisms; state of the art efficiencies; and future prospects for light emitting diodes. The text then discusses solid state spectroscopy, which is the pair spectra observed in gallium phosphide photoluminescence. The extensive studies of MIS diodes that have led to detailed understanding of the silicon-silicon dioxide interface, as well as the devices that can be fabricated by ion implantation in semiconductors are also considered. The book further tackles fundamental mechanisms of electron transport through insulating thin films; mechanisms that influence the design of many thin film; and semiconductor devices. Solid state physicists, materials scientists, electrical engineers, and graduate students working near the subjects being discussed will find the book invaluable.
Book Synopsis Narrow Gap Semiconductors 1995 by : J.L Reno
Download or read book Narrow Gap Semiconductors 1995 written by J.L Reno and published by CRC Press. This book was released on 2020-11-25 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Book Synopsis Topics in Growth and Device Processing of III-V Semiconductors by : S. J. Pearton
Download or read book Topics in Growth and Device Processing of III-V Semiconductors written by S. J. Pearton and published by World Scientific. This book was released on 1996 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Book Synopsis Electron Spectrum of Gapless Semiconductors by : J. Tsidilkovski
Download or read book Electron Spectrum of Gapless Semiconductors written by J. Tsidilkovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: A presentation of the peculiarities of the physical properties of a comparatively new class of solids. GSs are of practical interest since they are very sensitive to impurities, and to the influence of light, magnetic and electric fields, and to pressure.
Download or read book Ultrafast Photonics written by A. Miller and published by CRC Press. This book was released on 2019-08-22 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrafast photonics has become an interdisciplinary topic of high international research interest because of the spectacular development of compact and efficient lasers producing optical pulses with durations in the femtosecond time domain. Present day long-haul telecommunications systems are almost entirely based on the transmission of short burst
Book Synopsis Device Physics of Narrow Gap Semiconductors by : Junhao Chu
Download or read book Device Physics of Narrow Gap Semiconductors written by Junhao Chu and published by Springer Science & Business Media. This book was released on 2009-10-13 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.
Book Synopsis Narrow Gap Semiconductors 2007 by : Ben Murdin
Download or read book Narrow Gap Semiconductors 2007 written by Ben Murdin and published by Springer Science & Business Media. This book was released on 2008-11-30 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.
Book Synopsis Physics and Properties of Narrow Gap Semiconductors by : Junhao Chu
Download or read book Physics and Properties of Narrow Gap Semiconductors written by Junhao Chu and published by Springer Science & Business Media. This book was released on 2007-11-21 with total page 613 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Book Synopsis Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions by : Kazuto Akiba
Download or read book Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions written by Kazuto Akiba and published by Springer. This book was released on 2019-04-04 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.
Book Synopsis Narrow Gap Semiconductors - Proceedings Of The Eighth International Conference by : Sue-chu Shen
Download or read book Narrow Gap Semiconductors - Proceedings Of The Eighth International Conference written by Sue-chu Shen and published by World Scientific. This book was released on 1998-04-09 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contents:Materials and Related Physics: Magnetic Field and Dimensionality Induced Population Effects in HgSe and HgSe:Fe (O Portugall et al)Growth and in Situ Scanning Tunneling Microscopy Studies of IV–VI Semiconductors (Abstract) (G Springholz)Detectors and Arrays: China's Satellite Project for Earth Observation and Infrared Detection (D-B Kuang)Recent Progress in Quantum Well Infrared Photodetectors and Focal Plane Arrays for LWIR Imaging Applications (S S Li)Infrared Lasers: Mid-Infrared Resonant-Cavity-Based Devices: Of Detectors and Emitters (J Bleuse et al)W Lasers for the Mid-IR (J R Meyer et al)Devices and Related Physics: Optoelectronic Devices from Indium Aluminium Antimonide and Mercury Cadmium Telluride (T Ashley)Three-Terminal Superconductor–Semiconductor Devices (H Takayanagi & T Akazaki)Physics: Coherent Anti-Stokes Raman Scattering in Diluted Magnetic IV–VI Epilayers and Superlattices (H Pascher et al)High Field Cyclotron Resonance in GaSb and Effective Mass at the Γ and L-Points (H Arimoto et al)Quantum Dots: Growth and Characterization of InAs Quantum Dots (N N Ledentsov)Self-Assembled InAs Quantum Boxes: Growth, Intrinsic Properties, Potential Applications (Abstract) (J M Gérard)and other papers Readership: Researchers in the field of semiconductors.
Book Synopsis Fundamentals of Semiconductors by : Peter YU
Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Book Synopsis Ergebnisse der exakten Naturwissenschaften by : Rudolf Fleischmann
Download or read book Ergebnisse der exakten Naturwissenschaften written by Rudolf Fleischmann and published by . This book was released on 1934 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Resonant Tunneling in Semiconductors by : L.L. Chang
Download or read book Resonant Tunneling in Semiconductors written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.