Nanoscale Effects In Junctionless Field Effect Transistors

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Nanoscale Effects in Junctionless Field Effect Transistors

Author : Abdussamad Ahmed Muntahi
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.:/5 (16 download)

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Book Synopsis Nanoscale Effects in Junctionless Field Effect Transistors by : Abdussamad Ahmed Muntahi

Download or read book Nanoscale Effects in Junctionless Field Effect Transistors written by Abdussamad Ahmed Muntahi and published by . This book was released on 2018 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fabricate a useful JLFET device, as it requires a very shallow channel region. Very recently, the emergence of new and advanced technologies has made it possible to create viable JLFET devices using nanowires. This work aims to computationally investigate the interplay of quantum size-quantization and random dopant fluctuations (RDF) effects in nanoscale JLFETs. For this purpose, a 3-D fully atomistic quantum-corrected Monte Carlo device simulator has been integrated and used in this work. The size-quantization effect has been accounted for via a parameter-free effective potential scheme and benchmarked against the NEGF approach in the ballistic limit. To study the RDF effects and treat full Coulomb (electron-ion and electron-electron) interactions in the real-space and beyond the Poisson picture, the simulator implements a corrected-Coulomb electron dynamics (QC-ED) approach. The essential bandstructure and scattering parameters (energy bandgap, effective masses, and the density-of-states) have been computed using an atomistic 20-band nearest-neighbour sp 3d5s* tight-binding scheme. First, an experimental device was simulated to evaluate the validity of the simulator. Because of the small dimension, quantum mechanical confinement was found to be the dominant mechanism that significantly degrades the current drive capability of nanoscale JLFETs. Surface roughness scattering is not as prominent as observed in conventional MOSFETs. Also, because of its small size, the performance of the device is prone to the effect of variability, for which a discrete doping model was proved essential. Finally, a new JLFET was designed and optimized in this work. The proposed device is based on a gate-all-around silicon nanowire. Source/drain length is 32.5 nm and channel length is 14 nm. Gate contact length is 9 nm. The EOT (equivalent oxide thickness) is 1 nm. It has a metal gate with a workfunction of 4.55 eV. The source, channel and drain regions are n-type with a doping density of 1.5×1019 cm-3. Detailed simulation shows that the two most influential mechanisms that degrade the drive capability are quantum mechanical confinement and Coulomb scattering. Surface roughness scattering is found to be very weak. In addition, thinner nanowire is more prone to Coulomb scattering exhibiting a reduced ON-current (ION). Simulation results show that silicon nanowires with a side length (width and depth) of 3 nm and a doping density of 1.5×1019 cm-3 produce satisfactory drive current.

Junctionless Field-Effect Transistors

Author : Shubham Sahay
Publisher : John Wiley & Sons
ISBN 13 : 1119523532
Total Pages : 496 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis Junctionless Field-Effect Transistors by : Shubham Sahay

Download or read book Junctionless Field-Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Fundamentals of Nanoscaled Field Effect Transistors

Author : Amit Chaudhry
Publisher : Springer Science & Business Media
ISBN 13 : 1461468221
Total Pages : 211 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Fundamentals of Nanoscaled Field Effect Transistors by : Amit Chaudhry

Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Nanoscale Field Effect Transistors: Emerging Applications

Author : Ekta Goel, Archana Pandey
Publisher : Bentham Science Publishers
ISBN 13 : 9815165658
Total Pages : 212 pages
Book Rating : 4.8/5 (151 download)

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Book Synopsis Nanoscale Field Effect Transistors: Emerging Applications by : Ekta Goel, Archana Pandey

Download or read book Nanoscale Field Effect Transistors: Emerging Applications written by Ekta Goel, Archana Pandey and published by Bentham Science Publishers. This book was released on 2023-12-20 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers

Nanowire Field Effect Transistors: Principles and Applications

Author : Dae Mann Kim
Publisher : Springer Science & Business Media
ISBN 13 : 1461481244
Total Pages : 292 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Nanowire Field Effect Transistors: Principles and Applications by : Dae Mann Kim

Download or read book Nanowire Field Effect Transistors: Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Study of Novel Nano-Scale Junctionless Fin Field-Effect Transistors for 3D-IC Applications

Author : 埕雅琪
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (963 download)

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Book Synopsis Study of Novel Nano-Scale Junctionless Fin Field-Effect Transistors for 3D-IC Applications by : 埕雅琪

Download or read book Study of Novel Nano-Scale Junctionless Fin Field-Effect Transistors for 3D-IC Applications written by 埕雅琪 and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Junctionless Field-Effect Transistors

Author : Shubham Sahay
Publisher : John Wiley & Sons
ISBN 13 : 1119523524
Total Pages : 619 pages
Book Rating : 4.1/5 (195 download)

DOWNLOAD NOW!

Book Synopsis Junctionless Field-Effect Transistors by : Shubham Sahay

Download or read book Junctionless Field-Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-28 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Nanoscale Semiconductors

Author : Balwinder Raj
Publisher : CRC Press
ISBN 13 : 1000637506
Total Pages : 259 pages
Book Rating : 4.0/5 (6 download)

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Book Synopsis Nanoscale Semiconductors by : Balwinder Raj

Download or read book Nanoscale Semiconductors written by Balwinder Raj and published by CRC Press. This book was released on 2022-08-30 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.

Nanoscale VLSI

Author : Rohit Dhiman
Publisher : Springer Nature
ISBN 13 : 9811579377
Total Pages : 319 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis Nanoscale VLSI by : Rohit Dhiman

Download or read book Nanoscale VLSI written by Rohit Dhiman and published by Springer Nature. This book was released on 2020-10-03 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes methodologies in the design of VLSI devices, circuits and their applications at nanoscale levels. The book begins with the discussion on the dominant role of power dissipation in highly scaled devices.The 15 Chapters of the book are classified under four sections that cover design, modeling, and simulation of electronic, magnetic and compound semiconductors for their applications in VLSI devices, circuits, and systems. This comprehensive volume eloquently presents the design methodologies for ultra–low power VLSI design, potential post–CMOS devices, and their applications from the architectural and system perspectives. The book shall serve as an invaluable reference book for the graduate students, Ph.D./ M.S./ M.Tech. Scholars, researchers, and practicing engineers working in the frontier areas of nanoscale VLSI design.

Carrier Transport in Nanoscale MOS Transistors

Author : Hideaki Tsuchiya
Publisher : John Wiley & Sons
ISBN 13 : 1118871723
Total Pages : 265 pages
Book Rating : 4.1/5 (188 download)

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Book Synopsis Carrier Transport in Nanoscale MOS Transistors by : Hideaki Tsuchiya

Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-06-13 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

Nanoscale Transistors

Author : Mark Lundstrom
Publisher : Springer Science & Business Media
ISBN 13 : 0387280030
Total Pages : 223 pages
Book Rating : 4.3/5 (872 download)

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Book Synopsis Nanoscale Transistors by : Mark Lundstrom

Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors

Author :
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (93 download)

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Book Synopsis Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors by :

Download or read book Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Low Temperature Electronics

Author : Edmundo A. Gutierrez-D
Publisher : Elsevier
ISBN 13 : 0080510507
Total Pages : 986 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Low Temperature Electronics by : Edmundo A. Gutierrez-D

Download or read book Low Temperature Electronics written by Edmundo A. Gutierrez-D and published by Elsevier. This book was released on 2000-10-25 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Temperature Electronics: Physics, Devices, Circuits, and Applications summarizes the recent advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. Furthermore, this book provides an exploration of the currently available theory, research, and technologies related to cryoelectronics, including treatment of the solid state physical properties of the materials used in these systems. Current applications are found in infrared systems, satellite communications and medical equipment. There are opportunities to expand in newer fields such as wireless and mobile communications, computers, and measurement and scientific equipment. Low temperature operations can offer certain advantages such as higher operational speeds, lower power dissipation, shorter signal transmission times, higher semiconductor and metal thermal conductivities, and improved digital and analog circuit performance. The computer, telecommunication, and cellular phone market is pushing the semiconductor industry towards the development of very aggressive device and integrated circuit fabrication technologies. This is taking these technologies towards the physical miniaturization limit, where quantum effects and fabrication costs are becoming a technological and economical barrier for further development. In view of these limitations, operation of semiconductor devices and circuits at low temperature (cryogenic temperature) is studied in this book. * It is a book intended for a wide audience: students, scientists, technology development engineers, private companies, universities, etc. * It contains information which is for the first time available as an all-in-one source; Interdisciplinary material is arranged and made compatible in this book * It is a must as reference source

Outlook and Challenges of Nano Devices, Sensors, and MEMS

Author : Ting Li
Publisher : Springer
ISBN 13 : 3319508245
Total Pages : 522 pages
Book Rating : 4.3/5 (195 download)

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Book Synopsis Outlook and Challenges of Nano Devices, Sensors, and MEMS by : Ting Li

Download or read book Outlook and Challenges of Nano Devices, Sensors, and MEMS written by Ting Li and published by Springer. This book was released on 2017-02-22 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with an overview of the design, fabrication, simulation, and reliability of nanoscale semiconductor devices, MEMS, and sensors, as they serve for realizing the next-generation internet of things. The authors focus on how the nanoscale structures interact with the electrical and/or optical performance, how to find optimal solutions to achieve the best outcome, how these apparatus can be designed via models and simulations, how to improve reliability, and what are the possible challenges and roadblocks moving forward.

Sixth International Conference on Intelligent Computing and Applications

Author : Subhransu Sekhar Dash
Publisher : Springer Nature
ISBN 13 : 9811613354
Total Pages : 579 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Sixth International Conference on Intelligent Computing and Applications by : Subhransu Sekhar Dash

Download or read book Sixth International Conference on Intelligent Computing and Applications written by Subhransu Sekhar Dash and published by Springer Nature. This book was released on 2021-07-27 with total page 579 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the peer-reviewed proceedings of the Sixth International Conference on Intelligent Computing and Applications (ICICA 2020), held at Government College of Engineering, Keonjhar, Odisha, India, during December 22–24, 2020. The book includes the latest research on advanced computational methodologies such as neural networks, fuzzy systems, evolutionary algorithms, hybrid intelligent systems, uncertain reasoning techniques, and other machine learning methods and their applications to decision-making and problem-solving in mobile and wireless communication networks.

Nanotechnology

Author : Cherry Bhargava
Publisher : CRC Press
ISBN 13 : 100019714X
Total Pages : 264 pages
Book Rating : 4.0/5 (1 download)

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Book Synopsis Nanotechnology by : Cherry Bhargava

Download or read book Nanotechnology written by Cherry Bhargava and published by CRC Press. This book was released on 2020-10-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanotechnology: Advances and Real-Life Applications offers a comprehensive reference text about advanced concepts and applications in the field of nanotechnology. The text – written by researchers practicing in the field – presents a detailed discussion of key concepts including nanomaterials and their synthesis, fabrication and characterization of nanomaterials, carbon-based nanomaterials, nano-bio interface, and nanoelectronics. The applications of nanotechnology in the fields of renewable energy, medicine and agriculture are each covered in a dedicated chapter. The text will be invaluable for senior undergraduate and graduate students in the fields of electrical engineering, electronics engineering, nanotechnology and nanoscience. Dr. Cherry Bhargava is an Associate Professor and Head, VLSI domain, at the School of Electrical and Electronics Engineering of Lovely Professional University, Jalandhar, India. Dr. Amit Sachdeva is an Associate Professor at Lovely Professional University, Jalandhar, India.

Smart Trends in Information Technology and Computer Communications

Author : Aynur Unal
Publisher : Springer
ISBN 13 : 9811034338
Total Pages : 942 pages
Book Rating : 4.8/5 (11 download)

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Book Synopsis Smart Trends in Information Technology and Computer Communications by : Aynur Unal

Download or read book Smart Trends in Information Technology and Computer Communications written by Aynur Unal and published by Springer. This book was released on 2016-12-24 with total page 942 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the First International Conference on Smart Trends in Information Technology and Computer Communications, SmartCom 2016, held in Jaipur, India, in August 2016. The 106 revised papers presented were carefully reviewed and selected from 469 submissions. The papers address issues on smart and secure systems; technologies for digital world; data centric approaches; applications for e-agriculture and e-health; products and IT innovations; research for knowledge computing.