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Multilayer Reflective Coatings For Extreme Ultraviolet Lithography
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Book Synopsis Multilayer Reflective Coatings for Extreme-ultraviolet Lithography by :
Download or read book Multilayer Reflective Coatings for Extreme-ultraviolet Lithography written by and published by . This book was released on 1998 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling technology for EUV lithography. Mo/Si multilayers with reflectances of 67.5% at 13.4 nm are now routinely achieved and reflectances of 70 2% at 11.4 nm were obtained with MO/Be multilayers. High reflectance is achieved with careful control of substrate quality, layer thicknesses, multilayer materials, interface quality, and surface termination. Reflectance and film stress were found to be stable relative to the requirements for application to EUV lithography. The run-to-run reproducibility of the reflectance peak position was characterized to be better than 0.2%, providing the required wavelength matching among the seven multilayer-coated mirrors used in the present lithography system design. Uniformity of coating was improved to better than 0.5% across 150 mm diameter substrates. These improvements in EUV multilayer mirror technology will enable us to meet the stringent specifications for coating the large optical substrates for our next-generation EUV lithography system.
Book Synopsis Characterization of Multilayer Reflective Coatings for Extreme Ultraviolet Lithography by :
Download or read book Characterization of Multilayer Reflective Coatings for Extreme Ultraviolet Lithography written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The synchrotron-based reflectometer at beamline 6.3.2 of the Advanced Light Source (ALS) in Berkeley is an important metrology tool within the current Extreme Ultraviolet Lithography (EUVL) program. This program is a joint activity of three National Laboratories and a consortium of leading semiconductor manufacturers. Its goal is the development of a technology for routine production of sub-100 nm feature sizes for microelectronic circuits. Multilayer-coated normal-incidence optical surfaces reflecting in the Extreme Ultraviolet (EUV) spectral range near 13 nm are the basis for this emerging technology. All optical components of EUV lithographic steppers need to be characterized at-wavelength during their development and manufacturing process. Multilayer coating uniformity and gradient, accurate wavelength matching and high peak reflectances are the main parameters to be optimized. The mechanical and optical properties of the reflectometer at ALS beamline 6.3.2 proved to be well suited for the needs of the current EUVL program. In particular the facility is highly precise in its wavelength calibration and the determination of absolute EUV reflectance. The reproducibility of results of measurements at ALS beamline 6.3.2 is 0.2 % for reflectivity and 0.002 nm for wavelength.
Book Synopsis Passivating Overcoat Bilayer for Multilayer Reflective Coatings for Extreme Ultraviolet Lithography by :
Download or read book Passivating Overcoat Bilayer for Multilayer Reflective Coatings for Extreme Ultraviolet Lithography written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.
Book Synopsis Experimental Investigation of Beryllium-based Multilayer Coatings for Extreme Ultraviolet Lithography by :
Download or read book Experimental Investigation of Beryllium-based Multilayer Coatings for Extreme Ultraviolet Lithography written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of beryllium-based multilayer coatings designed to reflect light of wavelengths near 11 nm, at normal incidence, is presented. These multilayer coatings are of special interest for extreme ultraviolet lithography (EUVL). The beryllium-based multilayers investigated were Mo/Be, Ru/Be and a new material combination Mo, CiBe. The highest reflectivity achieved so far is 70% at 11.3 mn with 70 bilayers of Mo/Be. However, even though high reflectivity is very important, there are other parameters to satisfy the requirements for an EUVL production tool. Multilayer stress, thermal stability, radiation stability and long term reflectance stability are of equal or greater importance. An experimental characterization of several coatings was carried out to determine the reflectivity, stress, microstructure, and long term stability of these coatings. Theoretically calculated reflectivities are compared with experimental results for different material pairs; differences between experimental and theoretical reflectivities and bandwidths are addressed. Keywords: Extreme ultraviolet (EUV) lithography, reflective coatings, multilayer deposition, beryllium.
Book Synopsis High Reflectance-low Stress Mo-Si Multilayer Reflective Coatings by :
Download or read book High Reflectance-low Stress Mo-Si Multilayer Reflective Coatings written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A high reflectance-low stress Mo-Si multilayer reflective coating particularly useful for the extreme ultraviolet (EUV) wavelength region. While the multilayer reflective coating has particular application for EUV lithography, it has numerous other applications where high reflectance and low stress multilayer coatings are utilized. Multilayer coatings having high near-normal incidence reflectance (R.gtoreq.65%) and low residual stress (.ltoreq.100 MPa) have been produced using thermal and non-thermal approaches. The thermal approach involves heating the multilayer coating to a given temperature for a given time after deposition in order to induce structural changes in the multilayer coating that will have an overall "relaxation" effect without reducing the reflectance significantly.
Book Synopsis High-precision Reflectometry of Multilayer Coatings for Extreme Ultraviolet Lithography by :
Download or read book High-precision Reflectometry of Multilayer Coatings for Extreme Ultraviolet Lithography written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Synchrotron-based reflectometry is an important technique for the precise determination of optical properties of reflective multilayer coatings for Extreme Ultraviolet Lithography (EUVL). Multilayer coatings enable normal incidence reflectances of more than 65% in the wavelength range between 11 and 15 nm. In order to achieve high resolution and throughput of EUVL systems, stringent requirements not only apply to their mechanical and optical layout, but also apply to the optical properties of the multilayer coatings. Therefore, multilayer deposition on near-normal incidence optical surfaces of projection optics, condenser optics and reflective masks requires suitable high-precision metrology. Most important, due to their small bandpass on the order of only 0.5 nm, all reflective multilayer coatings in EUVL systems must be wavelength-matched to within "0.05 nm. In some cases, a gradient of the coating thickness is necessary for wavelength matching at variable average angle of incidence in different locations on the optical surfaces. Furthermore, in order to preserve the geometrical figure of the optical substrates, reflective multilayer coatings need to be uniform to within 0.01 nm in their center wavelength. This requirement can only be fulfilled with suitable metrology, which provides a precision of a fraction of this value. In addition, for the detailed understanding and the further development of reflective multilayer coatings a precision in the determination of peak reflectances is desirable on the order of 0.1%. Substrates up to 200 mm in diameter and 15 kg in mass need to be accommodated. Above requirements are fulfilled at beamline 6.3.2 of the Advanced Light Source (ALS) in Berkeley. This beamline proved to be precise within 0.2% (ms) for reflectance and 0.002 nm (rms) for wavelength.
Book Synopsis Process for Fabricating High Reflectance-low Stress Mo--Si Multilayer Reflective Coatings by :
Download or read book Process for Fabricating High Reflectance-low Stress Mo--Si Multilayer Reflective Coatings written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A high reflectance-low stress Mo--Si multilayer reflective coating particularly useful for the extreme ultraviolet (EUV) wavelength region. While the multilayer reflective coating has particular application for EUV lithography, it has numerous other applications where high reflectance and low stress multilayer coatings are utilized. Multilayer coatings having high near-normal incidence reflectance (R.gtoreq.65%) and low residual stress (.ltoreq.100 MPa) have been produced using thermal and non-thermal approaches. The thermal approach involves heating the multilayer coating to a given temperature for a given time after deposition in order to induce structural changes in the multilayer coating that will have an overall "relaxation" effect without reducing the reflectance significantly.
Book Synopsis Reflective Masks for Extreme Ultraviolet Lithography by : Khanh Bao Nguyen
Download or read book Reflective Masks for Extreme Ultraviolet Lithography written by Khanh Bao Nguyen and published by . This book was released on 1994 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Multilayer Coated Optics for an Alpha-class Extreme Ultraviolet Lithography System by :
Download or read book Multilayer Coated Optics for an Alpha-class Extreme Ultraviolet Lithography System written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present the results of coating the first set of optical elements for an alpha-class extreme-ultraviolet (EUV) lithography system, the Engineering Test Stand (ETS). The optics were coated with Mo/Si multilayer mirrors using an upgraded DC-magnetron sputtering system. Characterization of the near-normal incidence EUV reflectance was performed using synchrotron radiation from the Advanced Light Source at the Lawrence Berkeley National Laboratory. Stringent requirements were met for these multilayer coatings in terms of reflectance, wavelength matching among the different optics, and thickness control across the diameter of each individual optic. Reflectances above 65% were achieved at 13.35 nm at near-normal angles of incidence. The run-to-run reproducibility of the reflectance peak wavelength was maintained to within 0.4%, providing the required wavelength matching among the seven multilayer-coated optics. The thickness uniformity (or gradient) was controlled to within "0.25% peak-to-valley (P-V) for the condenser optics and "0.1% P-V for the four projection optics, exceeding the prescribed specification for the optics of the ETS.
Download or read book Lifetime Studies of Mo written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Extreme Ultraviolet Lithography (EUVL) is a candidate for future application by the semiconductor industry in the production of sub-100 nm feature sizes in integrated circuits. Using multilayer reflective coatings optimized at wavelengths ranging from 11 to 14 nm, EUVL represents a potential successor to currently existing optical lithography techniques. In order to assess lifetimes of the multilayer coatings under realistic conditions, a series of radiation stability tests has been performed. In each run a dose of EUV radiation equivalent to several months of lithographic operation was applied to Mo/Si and MO/Be multilayer coatings within a few days. Depending on the residual gas concentration in the vacuum environment, surface deposition of carbon during the exposure lead to losses in the multilayer reflectivity. However, in none of the experimental runs was structural damage within the bulk of the multilayers observed. Mo/Si multilayer coatings recovered their full original reflectivity after removal of the carbon layer by an ozone cleaning method. Auger depth profiling on MO/Be multilayers indicate that carbon penetrated into the Be top layer during illumination with high doses of EUV radiation. Subsequent ozone cleaning fully removed the carbon, but revealed enhanced oxidation of the area illuminated, which led to an irreversible loss in reflectance on the order of 1%. Keywords: Extreme ultraviolet (EUV) lithography, multilayer reflective coatings, radiation stability, surface contamination.
Book Synopsis Design and Performance of Capping Layers for EUV Multilayer Mirrors by : J. C. Robinson
Download or read book Design and Performance of Capping Layers for EUV Multilayer Mirrors written by J. C. Robinson and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a commercial tool environment is of uttermost importance to ensure continuous exposures with minimum maintenance cost. We have made substantial progress in designing the protective capping layer coatings, understanding their performance and estimating their lifetimes based on accelerated electron beam and EUV exposure studies. Our current capping layer coatings have about 40 times longer lifetimes than Si-capped multilayer optics. Nevertheless, the lifetime of current Ru-capped multilayers is too short to satisfy commercial tool requirements and further improvements are essential.
Book Synopsis Reflective Masks for Extreme Ultraviolet Lithography by :
Download or read book Reflective Masks for Extreme Ultraviolet Lithography written by and published by . This book was released on 1994 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 [mu]m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.
Book Synopsis Advances in the Reduction and Compensation of Film Stress in High-reflectance Multilayer Coatings for Extreme Ultraviolet Lithography Applications by :
Download or read book Advances in the Reduction and Compensation of Film Stress in High-reflectance Multilayer Coatings for Extreme Ultraviolet Lithography Applications written by and published by . This book was released on 1998 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the stringent surface figure requirements for the multilayer-coated optics in an extreme ultraviolet (EUV) projection lithography system, it is desirable to minimize deformation due to the multilayer film stress. However, the stress must be reduced or compensated without reducing EUV reflectivity, since the reflectivity has a strong impact on the throughput of a EUV lithography tool. In this work we identify and evaluate several leading techniques for stress reduction and compensation as applied to Mo/Si and Mo/Be multilayer films. The measured film stress for Mo/Si films with EUV reflectances near 67.4% at 13.4 nm is approximately - 420 MPa (compressive), while it is approximately +330 MPa (tensile) for Mo/Be films with EUV reflectances near 69.4% at 11.4 nm. Varying the Mo-to-Si ratio can be used to reduce the stress to near zero levels, but at a large loss in EUV reflectance (> 20%). The technique of varying the base pressure (impurity level) yielded a 10% decrease in stress with a 2% decrease in reflectance for our multilayers. Post-deposition annealing was performed and it was observed that while the cost in reflectance is relatively high (3.5%) to bring the stress to near zero levels (i.e., reduce by 1 00%), the stress can be reduced by 75% with only a 1.3% drop in reflectivity at annealing temperatures near 200°C. A study of annealing during Mo/Si deposition was also performed; however, no practical advantage was observed by heating during deposition. A new non-thermal (athermal) buffer-layer technique was developed to compensate for the effects of stress. Using this technique with amorphous silicon and Mo/Be buffer-layers it was possible to obtain Mo/Be and Mo/Si multilayer films with a near zero net film stress and less than a 1% loss in reflectivity. For example a Mo/Be film with 68.7% reflectivity at 11.4 nm and a Mo/Si film with 66.5% reflectivity at 13.3 nm were produced with net stress values less than 30 MPa.
Book Synopsis Multilayer Optics for an Extreme Ultraviolet Lithography Tool with 70 Nm Resolution by :
Download or read book Multilayer Optics for an Extreme Ultraviolet Lithography Tool with 70 Nm Resolution written by and published by . This book was released on 2001 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the most critical tasks in the development of extreme ultraviolet lithography (EUVL) is the accurate deposition of reflective multilayer coatings for the mirrors comprising the EUVL tool. The second set (Set 2) of four imaging optics for an alpha-class EUVL system has been coated successfully. All four mirrors (M1, M2, M3, M4) were Mo/Si-coated during a single deposition run with a production-scale DC-magnetron sputtering system. Ideally, the multilayer coatings should not degrade the residual wavefront error of the imaging system design. For the present EUVL camera, this requirement is equivalent to depositing multilayer coatings that would add a figure error of less than 0.11 nm rms. In addition, all mirrors should be matched in centroid wavelength, in order to insure maximum throughput of the EUVL tool. In order to meet these constraints, the multilayer deposition process needs to be controlled to atomic precision. EUV measurements of the coated mirrors determined that the added figure errors due to the multilayer coatings are 0.032 nm rms (M1), 0.037 nm rms (M2), 0.040 nm rms (M3) and 0.015 nm rms (M4), well within the aforementioned requirement of 0.11 nm rms. The average wavelength among the four projection mirrors is 13.352 nm, with an optic-to-optic matching of 1[sigma]=0.010 nm. This outstanding level of wavelength matching produces 99.3% of the throughput of an ideally matched four-mirror system. Peak reflectances are 63.8% (M1), 65.2% (M2), 63.8% (M3) and 66.7% (M4). The variation in reflectance values between the four optics is consistent with their high frequency substrate roughness. It is predicted that the multilayer coatings will not introduce any aberrations in the lithographic system performance, for both static and scanned images of 70 nm-dense features.
Download or read book EUV Lithography written by Vivek Bakshi and published by SPIE Press. This book was released on 2009 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: Editorial Review Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field. --Dr. Akira Endo, Chief Development Manager, Gigaphoton Inc. Description Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. About the editor of EUV Lithography Dr. Vivek Bakshi previously served as a senior member of the technical staff at SEMATECH; he is now president of EUV Litho, Inc., in Austin, Texas.
Book Synopsis Advances in Mirror Technology for X-ray, EUV Lithography, Laser and Other Applications by :
Download or read book Advances in Mirror Technology for X-ray, EUV Lithography, Laser and Other Applications written by and published by . This book was released on 2004 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Principles of Lithography by : Harry J. Levinson
Download or read book Principles of Lithography written by Harry J. Levinson and published by SPIE Press. This book was released on 2005 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lithography is a field in which advances proceed at a swift pace. This book was written to address several needs, and the revisions for the second edition were made with those original objectives in mind. Many new topics have been included in this text commensurate with the progress that has taken place during the past few years, and several subjects are discussed in more detail. This book is intended to serve as an introduction to the science of microlithography for people who are unfamiliar with the subject. Topics directly related to the tools used to manufacture integrated circuits are addressed in depth, including such topics as overlay, the stages of exposure, tools, and light sources. This text also contains numerous references for students who want to investigate particular topics in more detail, and they provide the experienced lithographer with lists of references by topic as well. It is expected that the reader of this book will have a foundation in basic physics and chemistry. No topics will require knowledge of mathematics beyond elementary calculus.
