Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Mosfet Models For Spice Simulation
Download Mosfet Models For Spice Simulation full books in PDF, epub, and Kindle. Read online Mosfet Models For Spice Simulation ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis MOSFET Models for SPICE Simulation by : William Liu
Download or read book MOSFET Models for SPICE Simulation written by William Liu and published by Wiley-IEEE Press. This book was released on 2001-02-21 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: Summarizes key BSIM3 components Represents the BSIM3 model with equivalent circuits for various operating conditions Provides a comprehensive glossary of modeling terminology Lists alphabetically BSIM3 parameters along with their meanings and relevant equations Explores BSIM3's flaws and provides improvement suggestions Describes all of BSIM4's improvements and new features Provides useful SPICE files, which are available online at the Wiley ftp site
Book Synopsis Mosfet Modeling for VLSI Simulation by : Narain Arora
Download or read book Mosfet Modeling for VLSI Simulation written by Narain Arora and published by World Scientific. This book was released on 2007 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Book Synopsis BSIM4 and MOSFET Modeling for IC Simulation by : Weidong Liu
Download or read book BSIM4 and MOSFET Modeling for IC Simulation written by Weidong Liu and published by World Scientific. This book was released on 2011 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Book Synopsis MOSFET Models for VLSI Circuit Simulation by : Narain D. Arora
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Book Synopsis MOSFET Modeling & BSIM3 User’s Guide by : Yuhua Cheng
Download or read book MOSFET Modeling & BSIM3 User’s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Book Synopsis MOSFET Modeling with SPICE by : Daniel Foty
Download or read book MOSFET Modeling with SPICE written by Daniel Foty and published by Prentice Hall. This book was released on 1997 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will help CMOS circuit designers make the best possible use of SPICE models, and will prepare them for new models that may soon be introduced. Introduces SPICE modeling and its use in CMOS circuit design. Presents the formalism of model building and the semiconductor physics of MOS structures. Covers each important SPICE model, showing how to choose the appropriate model. Discusses the popular HSPICE Level 28, as well as Levels 1-3, BSIM 1-3, and MOS Model 9. Presents techniques for accounting for systematic process variations. Describes new model candidates, including the Power-Lane Model, the PCIM Model, and the EKV Model. Includes extensive examples throughout. Practicing engineers and scientists in the semiconductor industry; engineering faculty and students.
Book Synopsis MOSFET Modeling for Circuit Analysis and Design by : Carlos Galup-Montoro
Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Book Synopsis FET Modeling for Circuit Simulation by : Dileep A. Divekar
Download or read book FET Modeling for Circuit Simulation written by Dileep A. Divekar and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is widely used for the design of circuits, both discrete and integrated. Device modeling is an impor tant aspect of circuit simulation since it is the link between the physical device and the sim ulate d device. Curren tly available circuit simulation programs provide a variety of built-in models. Many circuit designers use these built-in models whereas some incorporate new models in the circuit sim ulation programs. Understanding device modeling with particular emphasis on circuit simulation will be helpful in utilizing the built-in models more efficiently as well as in implementing new models. SPICE is used as a vehicle since it is the most widely used circuit sim ulation program. How ever, some issues are addressed which are not directly appli cable to SPICE but are applicable to circuit simulation in general. These discussions are useful for modifying SPICE and for understanding other simulation programs. The gen eric version 2G. 6 is used as a reference for SPICE, although numerous different versions exist with different modifications. This book describes field effect transistor models commonly used in a variety of circuit sim ulation pro grams. Understanding of the basic device physics and some familiarity with device modeling is assumed. Derivation of the model equations is not included. ( SPICE is a circuit sim ulation program available from EECS Industrial Support Office, 461 Cory Hall, University of Cali fornia, Berkeley, CA 94720. ) Acknowledgements I wish to express my gratitude to Valid Logic Systems, Inc.
Book Synopsis Compact MOSFET Models for VLSI Design by : A. B. Bhattacharyya
Download or read book Compact MOSFET Models for VLSI Design written by A. B. Bhattacharyya and published by John Wiley & Sons. This book was released on 2009-07-23 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. Adopts a unified approach to guide students through the confusing array of MOSFET models Links MOS physics to device models to prepare practitioners for real-world design activities Helps fabless designers bridge the gap with off-site foundries Features rich coverage of: quantum mechanical related phenomena Si-Ge strained-Silicon substrate non-classical structures such as Double Gate MOSFETs Presents topics that will prepare readers for long-term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya
Book Synopsis Compact Modeling by : Gennady Gildenblat
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Book Synopsis The Physics and Modeling of Mosfets by :
Download or read book The Physics and Modeling of Mosfets written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analysis and Design of MOSFETs by : Juin Jei Liou
Download or read book Analysis and Design of MOSFETs written by Juin Jei Liou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Book Synopsis The Physics and Modeling of Mosfets by : Mitiko Miura-Mattausch
Download or read book The Physics and Modeling of Mosfets written by Mitiko Miura-Mattausch and published by World Scientific. This book was released on 2008 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Book Synopsis BSIM4 and MOSFET Modeling for IC Simulation by : Weidong Liu
Download or read book BSIM4 and MOSFET Modeling for IC Simulation written by Weidong Liu and published by World Scientific. This book was released on 2011 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Book Synopsis Introduction to Device Modeling and Circuit Simulation by : Tor A. Fjeldly
Download or read book Introduction to Device Modeling and Circuit Simulation written by Tor A. Fjeldly and published by Wiley-Interscience. This book was released on 1998 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.
Book Synopsis Compact Models for Integrated Circuit Design by : Samar K. Saha
Download or read book Compact Models for Integrated Circuit Design written by Samar K. Saha and published by CRC Press. This book was released on 2018-09-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Book Synopsis The SPICE Book by : Andrei Vladimirescu
Download or read book The SPICE Book written by Andrei Vladimirescu and published by John Wiley & Sons. This book was released on 1994 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new book, written by Andre Vladimirescu, who was instrumental in the development of SPICE at the University of California Berkeley, introduces computer simulation of electrical and electronics circuits based on the SPICE standard. Relying on the functionality first supported in SPICE2 that is now supported in all SPICE programs, this text is addressed to all users of electrical simulation. The approach to learning circuit simulation is to interpret simulation results in relation to electrical engineering fundamentals; the book asks the student to solve most circuit examples by hand before verifying the results with SPICE. Addressed to both the SPICE novice and the experienced user, the first six chapters provide the relevant information on SPICE functionality for the analysis of linear as well as nonlinear circuits. Each of these chapters starts out with a linear example accessible to any new user of SPICE and proceeds with nonlinear transistor circuits. The latter part of the book goes into more detail on such issues as functional and hierarchical models, distortion analysis, basic algorithms in SPICE and related options parameters, and, how to direct SPICE to find a solution when it does not converge to a solution. The approach emphasizes that SPICE is not a substitute for knowledge of circuit operation but a complement. The SPICE Book is different from previously published books in the approach of solving circuit problems with a computer. The solution to most circuit examples is sketched out by hand first and followed by a SPICE verification. For more complex circuits it is not feasible to find the solution by hand but the approach stresses the need for the SPICE user tounderstand the results. Readers gain a better comprehension of SPICE thanks to the importance placed on the relation between EE fundamentals and computer simulation. The tutorial approach advances from the hand solution of a circuit to SPICE verification and simulation results interpretation. This book teaches the approach to electrical circuit simulation rather than a specific simulation program. Examples are simulated alternatively with SPICE2, SPICE3 or PSPICE. Accurate descriptions, simulation rationale and cogent explanations make this an invaluable reference.
