Monte Carlo Method for Simulation of Electron Transport in Semiconductors

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ISBN 13 :
Total Pages : 478 pages
Book Rating : 4.:/5 (26 download)

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Book Synopsis Monte Carlo Method for Simulation of Electron Transport in Semiconductors by : Joel Reuben Phillips

Download or read book Monte Carlo Method for Simulation of Electron Transport in Semiconductors written by Joel Reuben Phillips and published by . This book was released on 1991 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Monte Carlo Method for Semiconductor Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 3709169631
Total Pages : 370 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors

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ISBN 13 :
Total Pages : 508 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors by : John David Albrecht

Download or read book Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors written by John David Albrecht and published by . This book was released on 1999 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Estimators in Monte Carlo Semiconductor Electron Transport Simulations

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ISBN 13 :
Total Pages : 62 pages
Book Rating : 4.:/5 (15 download)

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Book Synopsis Estimators in Monte Carlo Semiconductor Electron Transport Simulations by : Daniel William Bailey

Download or read book Estimators in Monte Carlo Semiconductor Electron Transport Simulations written by Daniel William Bailey and published by . This book was released on 1986 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 1461540267
Total Pages : 317 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Monte Carlo Device Simulation by : Karl Hess

Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.

Monte Carlo Simulation of Semiconductor Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 9401581339
Total Pages : 343 pages
Book Rating : 4.4/5 (15 download)

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Book Synopsis Monte Carlo Simulation of Semiconductor Devices by : C. Moglestue

Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.

Monte Carlo Transport of Electrons and Photons

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Publisher : Springer Science & Business Media
ISBN 13 : 1461310598
Total Pages : 637 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Monte Carlo Transport of Electrons and Photons by : T.M. Jenkins

Download or read book Monte Carlo Transport of Electrons and Photons written by T.M. Jenkins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: For ten days at the end of September, 1987, a group of about 75 scientists from 21 different countries gathered in a restored monastery on a 750 meter high piece of rock jutting out of the Mediterranean Sea to discuss the simulation of the transport of electrons and photons using Monte Carlo techniques. When we first had the idea for this meeting, Ralph Nelson, who had organized a previous course at the "Ettore Majorana" Centre for Scientific Culture, suggested that Erice would be the ideal place for such a meeting. Nahum, Nelson and Rogers became Co-Directors of the Course, with the help of Alessandro Rindi, the Director of the School of Radiation Damage and Protection, and Professor Antonino Zichichi, Director of the "Ettore Majorana" Centre. The course was an outstanding success, both scientifically and socially, and those at the meeting will carry the marks of having attended, both intellectually and on a personal level where many friendships were made. The scientific content of the course was at a very high caliber, both because of the hard work done by all the lecturers in preparing their lectures (e. g. , complete copies of each lecture were available at the beginning of the course) and because of the high quality of the "students", many of whom were accomplished experts in the field. The outstanding facilities of the Centre contributed greatly to the success. This volume contains the formal record of the course lectures.

Transport Simulation in Microelectronics

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Publisher : Birkhäuser
ISBN 13 : 303489080X
Total Pages : 235 pages
Book Rating : 4.0/5 (348 download)

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Book Synopsis Transport Simulation in Microelectronics by : Alfred Kersch

Download or read book Transport Simulation in Microelectronics written by Alfred Kersch and published by Birkhäuser. This book was released on 2012-12-06 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computer simulation of semiconductor processing equipment and devices requires the use of a wide variety of numerical methods. Of these methods, the Monte Carlo approach is perhaps most fundamentally suited to mod eling physical events occurring on microscopic scales which are intricately connected to the particle structure of nature. Here physical phenomena can be simulated by following simulation particles (such as electrons, molecules, photons, etc. ) through a statistical sampling of scattering events. Monte Carlo is, however, generally looked on as a last resort due to the extremely slow convergence of these methods. It is of interest, then, to examine when in microelectronics it is necessary to use Monte Carlo methods, how such methods may be improved, and what are the alternatives. This book ad dresses three general areas of simulation which frequently arise in semicon ductor modeling where Monte Carlo methods playa significant role. In the first chapter the basic mathematical theory of the Boltzmann equation for particle transport is presented. The following chapters are devoted to the modeling of the transport processes and the associated Monte Carlo meth ods. Specific examples of industrial applications illustrate the effectiveness and importance of these methods. Two of these areas concern simulation of physical particles which may be assigned a time dependent position and velocity. This includes the molecules of a dilute gas used in such processing equipment as chemi cal vapor decomposition reactors and sputtering reactors. We also consider charged particles moving within a semiconductor lattice.

Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe

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Publisher : Herbert Utz Verlag
ISBN 13 : 9783896752703
Total Pages : 196 pages
Book Rating : 4.7/5 (527 download)

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Book Synopsis Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe by : Fabian M. Bufler

Download or read book Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe written by Fabian M. Bufler and published by Herbert Utz Verlag. This book was released on 1998 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors

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ISBN 13 :
Total Pages : 254 pages
Book Rating : 4.:/5 (22 download)

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Book Synopsis Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors by : Ki Wook Kim

Download or read book Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors written by Ki Wook Kim and published by . This book was released on 1988 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron transport in III-V semiconductors, especially the Ga/As/AlGaAs material systems, is studied in various nonequilibrium situations. Throughout the study, a Monte Carlo simulation method is used for the analysis of transport properties in the semiclassical Boltzmann transport picture. The present work essentially consists of two aspects. The first topic is hot electron transport in GaAs, focusing on the electron impact ionization effects. The dependence of impact ionization rates on the details of the band structure is investigated by using two (local and nonlocal) pseudopotential methods. The spatial evolution of the ionization rate and the average electron energy are studied in nonuniform fields characteristic of p+-n junctions. The effects of field fluctuations due to the random distribution of dopants are studied as well. The possibility of new GaAs electron-emitting diodes is explored numerically and compared with the corresponding Si devices. The second aspect deals with the effects of conduction band discontinuities on the electron transport. In particular, one-dimensional heterostructures are modeled to study the nonlinear transport across heterointerfaces. (RH).

A Study of Electon Transport in Small Semiconductor Devices

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ISBN 13 :
Total Pages : 346 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis A Study of Electon Transport in Small Semiconductor Devices by : John Bronn Socha

Download or read book A Study of Electon Transport in Small Semiconductor Devices written by John Bronn Socha and published by . This book was released on 1985 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Device Simulator for Electron Transport in III-V Semiconductors

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Publisher :
ISBN 13 :
Total Pages : 200 pages
Book Rating : 4.:/5 (969 download)

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Book Synopsis Monte Carlo Device Simulator for Electron Transport in III-V Semiconductors by : Sidney Chee Mun Ng

Download or read book Monte Carlo Device Simulator for Electron Transport in III-V Semiconductors written by Sidney Chee Mun Ng and published by . This book was released on 1993 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Theory of Electron Transport in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3642105866
Total Pages : 590 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Theory of Electron Transport in Semiconductors by : Carlo Jacoboni

Download or read book Theory of Electron Transport in Semiconductors written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2010-09-05 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.

The Wigner Monte Carlo Method for Nanoelectronic Devices

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Publisher : John Wiley & Sons
ISBN 13 : 1118618440
Total Pages : 191 pages
Book Rating : 4.1/5 (186 download)

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Book Synopsis The Wigner Monte Carlo Method for Nanoelectronic Devices by : Damien Querlioz

Download or read book The Wigner Monte Carlo Method for Nanoelectronic Devices written by Damien Querlioz and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.

Monte Carlo Studies of the Electron Transport in III-V Semiconductors and Semiconductor Devices

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Publisher :
ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.:/5 (14 download)

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Book Synopsis Monte Carlo Studies of the Electron Transport in III-V Semiconductors and Semiconductor Devices by : Charles Kenneth Williams

Download or read book Monte Carlo Studies of the Electron Transport in III-V Semiconductors and Semiconductor Devices written by Charles Kenneth Williams and published by . This book was released on 1982 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Studies of Electron Transport in III-V Semiconductor Heterostructures

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ISBN 13 :
Total Pages : 79 pages
Book Rating : 4.:/5 (222 download)

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Book Synopsis Monte Carlo Studies of Electron Transport in III-V Semiconductor Heterostructures by : Martin E. Klausmeier-Brown

Download or read book Monte Carlo Studies of Electron Transport in III-V Semiconductor Heterostructures written by Martin E. Klausmeier-Brown and published by . This book was released on 1986 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Simulations of Electron Transport in Quantum Well Heterostructures

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (599 download)

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Book Synopsis Monte Carlo Simulations of Electron Transport in Quantum Well Heterostructures by : David Hoare

Download or read book Monte Carlo Simulations of Electron Transport in Quantum Well Heterostructures written by David Hoare and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: