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Author : Edward Allen Van Gieson
Publisher :
ISBN 13 :
Total Pages : 278 pages
Book Rating : 4.E/5 ( download)
Download or read book Molecular Beam Epitaxy of Aluminum Gallium Arsenide on Channeled Substrates written by Edward Allen Van Gieson and published by . This book was released on 1989 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Timothy Scott Henderson
Publisher :
ISBN 13 :
Total Pages : 90 pages
Book Rating : 4.:/5 (142 download)
Download or read book Gallium Arsenide and Aluminum Gallium Arsenide on Germanium and Silicon Substrates Grown by Molecular Beam Epitaxy for Device Applications written by Timothy Scott Henderson and published by . This book was released on 1985 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David Constantine Radulescu
Publisher :
ISBN 13 :
Total Pages : 578 pages
Book Rating : 4.E/5 ( download)
Download or read book Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures written by David Constantine Radulescu and published by . This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Susan C. Palmateer
Publisher :
ISBN 13 :
Total Pages : 570 pages
Book Rating : 4.E/5 ( download)
Download or read book Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers written by Susan C. Palmateer and published by . This book was released on 1985 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Demand Bibliography written by and published by . This book was released on 1989 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Helmut Kanter
Publisher :
ISBN 13 :
Total Pages : 27 pages
Book Rating : 4.:/5 (227 download)
Download or read book Molecular Beam Epitaxial (MBE) Growth of Gallium Arsenide and Gallium Aluminum Arsenide written by Helmut Kanter and published by . This book was released on 1985 with total page 27 pages. Available in PDF, EPUB and Kindle. Book excerpt: The construction and operation of a molecular beam epitaxial (MBE) system for promoting the epitaxial growth of gallium arsenide (GaAs) and gallium aluminum arsenide (FaAlAs) materials is described. These materials are studied in support of development of GaAs-based microwave and millimeter-wave devices as well as fast integrated digital circuits.
Author : Yao-Hwa Wu
Publisher :
ISBN 13 :
Total Pages : 362 pages
Book Rating : 4.:/5 (29 download)
Download or read book Molecular-beam-epitaxy Grown Channeled-substrate Multiple-quantum-well Lasers, Surface-emitting Laser Diodes, and Study of Dopant Effect on Disordering of Superlattice written by Yao-Hwa Wu and published by . This book was released on 1986 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David Ian Westwood
Publisher :
ISBN 13 :
Total Pages : 432 pages
Book Rating : 4.:/5 (896 download)
Download or read book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates written by David Ian Westwood and published by . This book was released on 1990 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Susan C. Palmateer
Publisher :
ISBN 13 :
Total Pages : 286 pages
Book Rating : 4.E/5 ( download)
Download or read book Manganese Incorporation in Gallium Arsenide Grown by Molecular Beam Epitaxy written by Susan C. Palmateer and published by . This book was released on 1982 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Günter Weimann
Publisher : CRC Press
ISBN 13 : 9780750302951
Total Pages : 880 pages
Book Rating : 4.3/5 (29 download)
Download or read book Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author :
Publisher :
ISBN 13 :
Total Pages : 1148 pages
Book Rating : 4.F/5 ( download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 1148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 876 pages
Book Rating : 4.X/5 (2 download)
Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1993 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Paul Michael Enquist
Publisher :
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.E/5 ( download)
Download or read book The Growth and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistor Structures by Molecular Beam Epitaxy written by Paul Michael Enquist and published by . This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David Ian Westwood
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (127 download)
Download or read book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates written by David Ian Westwood and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1148 pages
Book Rating : 4.E/5 ( download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 1148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Timothy James Drummond
Publisher :
ISBN 13 :
Total Pages : 58 pages
Book Rating : 4.:/5 (227 download)
Download or read book The Fabrication of Double Heterostructure Aluminum Gallium Arsenide/gallium Arsenide Lasers by Molecular Beam Epitaxy written by Timothy James Drummond and published by . This book was released on 1982 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today there exists a need to be able to process increasing amounts of data at rates beyond the capabilities of existing purely electrical networks. To meet this need, networks which transmit data via an optical carrier rather than an electrical one are being developed. A necessary component of an optical network is a small, easily modulated source of coherent light. The only such source available is a laser diode. The first laser diode to operate continuously at room temperature was a double heterostructure (DH) (Al, Ga)As/GaAs laser prepared by liquid phase epitaxy (LPE). Much effort was subsequently devoted to reproducing those results by molecular beam epitaxy (MBE). MBE offers several advantages over LPE, such as control of composition and impurity profiles to atomic dimensions. Layers cna be grown on larger substrates and with a high degree of uniformity and reproducibility that is not possible with LPE. Despite these advantages, it was six years after the first continuous room temperature operation of an (Al, Ga)As/GaAs DH laser that a similar laser prepared by MBE was reported. The first MBE lasers typically had threshold current densities, Jth, about twice as large as similarly designed LPE lasers. Another three years passed before the art of MBE advanced to the point where it became possible to achieve laser performance equal to the LPE lasers. The presence of non-radiative recombination centers in the bulk (Al, Ga)As layers was shown to make a significant contribution to the high threshold current densities in MBE lasers.
Author : Chet Vernon Lenox
Publisher :
ISBN 13 :
Total Pages : 224 pages
Book Rating : 4.:/5 (374 download)
Download or read book The use of the native oxide of aluminum gallium arsenide in optoelectronic devices grown by molecular beam epitaxy written by Chet Vernon Lenox and published by . This book was released on 1997 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
