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Molecular Beam Epitaxy Grown Iii Nitride Materials For High Power And High Temperature Applications
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Book Synopsis Molecular Beam Epitaxy Grown III-nitride Materials for High-power and High-temperature Applications by : Gon Namkoong
Download or read book Molecular Beam Epitaxy Grown III-nitride Materials for High-power and High-temperature Applications written by Gon Namkoong and published by . This book was released on 2003 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Optoelectronic Devices by : M Razeghi
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Book Synopsis Growth of III-nitrides by Molecular Beam Epitaxy for Heterojunction Field Effect Transistors and Optoelectronic Applications by : Jeonghyun Hwang
Download or read book Growth of III-nitrides by Molecular Beam Epitaxy for Heterojunction Field Effect Transistors and Optoelectronic Applications written by Jeonghyun Hwang and published by . This book was released on 2004 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Robin F.C. Farrow
Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Book Synopsis Molecular Beam Epitaxy by : Hajime Asahi
Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Book Synopsis Molecular Beam Epitaxy by : Marian A. Herman
Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Book Synopsis Proceedings of the Second Symposium on III-V Nitride Materials and Processes by : C. R. Abernathy
Download or read book Proceedings of the Second Symposium on III-V Nitride Materials and Processes written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1998 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Iii-nitride Materials, Devices And Nano-structures by : Zhe Chuan Feng
Download or read book Iii-nitride Materials, Devices And Nano-structures written by Zhe Chuan Feng and published by World Scientific. This book was released on 2017-04-20 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of Ultra-wide Bandgap Materials and Devices by : Ryan Lowry Page
Download or read book Molecular Beam Epitaxy Growth and Characterization of Ultra-wide Bandgap Materials and Devices written by Ryan Lowry Page and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrawide bandgap (UWBG) semiconductors, especially those in the III-nitride family of materials with their exceptional electronic, optical, and thermal properties, will play a highly important role in the next generation of ultraviolet photonic and high power electronic devices. Currently, the performance and utilization of many UWBG materials in device applications is hampered by fundamental materials challenges with growth and doping. This thesis covers the growth and materials properties of two III-nitride UWBG materials, primarily grown by molecular beam epitaxy (MBE). First, hexagonal boron nitride, a two dimensional, layered material with unique optical properties and potential applications in van der Waals-based devices and heterostructures will be discussed. Second, recent work on aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) alloys will be presented.This work begins with an investigation into the high temperature MBE growth of hBN on several substrates. The layers show improved quality over previous reports and are thoroughly characterized. Next, the optical properties of these hBN films, as well as those of bulk doped hBN crystals, are investigated by cryogenic deep UV photoluminescence. Several new emission characteristics are identified and studied in these hBN materials, including carbon-induced luminescence, the direct bandgap transition of monolayer hBN, and single photon emission from hBN defects. Transitioning to the AlGaN platform, the growth of AlN and AlGaN by MBE on high quality single crystalline bulk AlN substrates is outlined and expanded upon, including an analysis of AlGaN doping with Si and Mg. The MBE growth, doping, and electron transport of heavily Si-doped, high Al mole fraction Al- GaN on bulk AlN is investigated, revealing upper practical limits to both Al mole fraction and Si doping density for high conductivity n-type films. In addition to this work on material growth and characterization, several AlGaN-based devices, an optically pumped UV laser and a Schottky barrier diode, will be introduced and discussed. These devices directly benefit from the preceding advances in AlGaN growth and doping. Finally, initial exploratory investigations and results on cubic phase BN as well as boron aluminum nitride alloys will be presented.
Book Synopsis III-Nitride Electronic Devices by : Rongming Chu
Download or read book III-Nitride Electronic Devices written by Rongming Chu and published by Academic Press. This book was released on 2019-10 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Book Synopsis Iii-nitride Semiconductor Materials by : Zhe Chuan Feng
Download or read book Iii-nitride Semiconductor Materials written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006-03-20 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Book Synopsis Proceedings of the Third Symposium on III-V Nitride Materials and Processes by : T. D. Moustakas
Download or read book Proceedings of the Third Symposium on III-V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1999 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dilute Nitride Semiconductors by : Mohamed Henini
Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Book Synopsis MBE Growth of High Performance Nitride Devices for Energy, Communications, and Defense Applications by : Kristopher Dan Matthews
Download or read book MBE Growth of High Performance Nitride Devices for Energy, Communications, and Defense Applications written by Kristopher Dan Matthews and published by . This book was released on 2011 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis work features the exploration of the capabilities and limitations of devices based on MBE (Molecular Beam Epitaxy) grown IIInitride materials under three principal applications: photovoltaics, high electron mobility transistors (HEMTs), and terahertz emitters. InGaN solar cells covering the deep UV to the red ranges of the solar spectrum were fabricated. The increase in indium composition in the alloys to absorb longer wavelengths resulted in considerable leakage and series resistance caused by a combination of surface electron accumulation and electrically active line defects. A combination of thermal annealing, improved ohmic contact metal selection, electrochemical anodization, and grain coarsening resulted in improved performance. Higher sheet densities and sheet current with minimal leakage was obtained in an AlGaN/GaN HEMT by optimizing the design to include a GaN cap as a tunneling barrier and an AlN interbarrier to increase 2DEG confinement. Furthermore, a novel technique using a 325 nm, surface sensitive laser to perform micro-Raman thermal mapping on HEMTs was developed. The technique utilized higher order A1(LO) phonons for higher thermal sensitivity. Lastly, progress was made toward GaN THz emitter development by achieving low series resistance operation through improved metal contact selection and ultra high Ge donor doping via MBE.
Book Synopsis Nitride Semiconductors by : Pierre Ruterana
Download or read book Nitride Semiconductors written by Pierre Ruterana and published by John Wiley & Sons. This book was released on 2003-06-09 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.
Book Synopsis Proceedings of the Third Symposium on III-V Nitride Materials and Processes by : T. D. Moustakas
Download or read book Proceedings of the Third Symposium on III-V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1999 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
