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Molecular Beam Epitaxy And Heterostructures
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Book Synopsis Molecular Beam Epitaxy and Heterostructures by : L.L. Chang
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Book Synopsis Molecular Beam Epitaxy by : Robin F.C. Farrow
Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Book Synopsis Gas Source Molecular Beam Epitaxy by : Morton B. Panish
Download or read book Gas Source Molecular Beam Epitaxy written by Morton B. Panish and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Molecular Beam Epitaxy by : Hajime Asahi
Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Book Synopsis Molecular Beam Epitaxy and in Situ Reflection High-energy Electron Diffraction of IV-VI Semiconductor Heterostructures by : Gunther Springholz
Download or read book Molecular Beam Epitaxy and in Situ Reflection High-energy Electron Diffraction of IV-VI Semiconductor Heterostructures written by Gunther Springholz and published by . This book was released on 1994 with total page 285 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Marian A. Herman
Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures by : Abdelhamid Abdelrehim Mahmoud Elshaer
Download or read book Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures written by Abdelhamid Abdelrehim Mahmoud Elshaer and published by Cuvillier Verlag. This book was released on 2008 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxy of Semiconductors by : Udo W. Pohl
Download or read book Epitaxy of Semiconductors written by Udo W. Pohl and published by Springer Nature. This book was released on 2020-07-20 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
Book Synopsis Heterostructure Epitaxy and Devices - HEAD’97 by : Peter Kordos
Download or read book Heterostructure Epitaxy and Devices - HEAD’97 written by Peter Kordos and published by Springer Science & Business Media. This book was released on 1998-03-31 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.
Book Synopsis Molecular Beam Epitaxy by : Hajime Asahi
Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-02-01 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Book Synopsis Molecular Beam Epitaxy of III–V Compounds by : K. Ploog
Download or read book Molecular Beam Epitaxy of III–V Compounds written by K. Ploog and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth and electronic properties of semiconductor thin films are becoming increasingly important for fundamental and applied research and for device applications. This book contains a comprehensive collection of over 1500 references covering the first 25 years of molecular beam epitaxy of III-V compound semiconductors. Molecular beam epitaxy is a versatile thin film growth technique which emerged from the 'Three-temperature method' de veloped in the 1950s and from surface kinetic studies performed in the 1960s. III-V semiconductors such as GaAs, AlAs, (Galn)As, InP, etc., play an important role in the application to optoelectronic and high-speed devices. Over the past three years the technology of molecular beam epitaxy has spread rapidly to most major research and development laboratories through out the world, and an increasing number of highly refined III-V semiconduc tor structures with exactly tailored electronic properties have been pro duced and explored for fundamental studies as well as for device appl ica tion. The comprehensive bibliography on this dramatically expanding topic helps chemists, engineers, materials scientists, and physicists working in semiconductor research and development areas to sort out the important lit erature of their particular interest. A direct reproduction of the output of a computer printer has been used to enable rapid publication and to keep printing costs low. The work was sponsored by the 'Bundesministerium fUr Forschung und Technologie' of the Federal Republic of Germany. Stuttgart, January 1984 K. Ploog . K. Graf Subject Categories and References Introduction ... Year 1977 ...
Book Synopsis Crystal Growth in Science and Technology by : H. Arend
Download or read book Crystal Growth in Science and Technology written by H. Arend and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 425 pages. Available in PDF, EPUB and Kindle. Book excerpt: Science and art of crystal growth represent an interdisciplinary activity based on fundamental principles of physics, chemistry and crystallography. Crystal growth has contributed over the years essentially to a widening of knowledge in its basic disciplines and has penetrated practically into all fields of experimental natural sciences. It has acted, more over, in a steadily increasing manner as a link between science and technology as can be seen best, for example, from the achievements in modern microelectronics. The aim of the course "Crystal Growth in Science and Technology" being to stress the interdisciplinary character of the subject, selected fundamental principles are reviewed in the following contributions and cross links between basic and applied aspects are illustrated. It is a very well-known fact that the intensive development of crystal growth has led to a progressive narrowing of interests in highly specialized directions which is in particular harmful to young research scientists. The organizers of the course did sincerely hope that the program would help to broaden up the horizon of the participants. It was equally their wish to contribute within the traditional spirit of the school of crystallography in Erice to the promotion of mutual understanding, personal friendship and future collaboration between all those who were present at the school.
Book Synopsis Molecular Beam Epitaxy by : John Orton
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Book Synopsis Silicon Molecular Beam Epitaxy by : Erwin Kasper
Download or read book Silicon Molecular Beam Epitaxy written by Erwin Kasper and published by Elsevier. This book was released on 2012-12-02 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.
Book Synopsis Materials Fundamentals of Molecular Beam Epitaxy by : Jeffrey Y. Tsao
Download or read book Materials Fundamentals of Molecular Beam Epitaxy written by Jeffrey Y. Tsao and published by Academic Press. This book was released on 2012-12-02 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy * Thorough enough to benefit molecular beam epitaxy researchers * Broad enough to benefit materials, surface, and device researchers * Referenes articles at the forefront of modern research as well as those of historical interest
Book Synopsis MOLECULAR BEAM EPITAXY AND CHARACTERIZATION OF STRAINED HETEROSTRUCTURES AND DEVICES (IMPACT IONIZATION). by : YAOCHUNG CHEN
Download or read book MOLECULAR BEAM EPITAXY AND CHARACTERIZATION OF STRAINED HETEROSTRUCTURES AND DEVICES (IMPACT IONIZATION). written by YAOCHUNG CHEN and published by . This book was released on 1992 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: capability.
