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Molecular Beam Epitaxial Growth And Electrical And Optical Investigations Of Iii V Compound Semiconductors
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Book Synopsis Molecular Beam Epitaxial Growth and Electrical and Optical Investigations of III-V Compound Semiconductors by : Anupam Madhukar
Download or read book Molecular Beam Epitaxial Growth and Electrical and Optical Investigations of III-V Compound Semiconductors written by Anupam Madhukar and published by . This book was released on 1986 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: A list of capital equipment acquired for updating the Perkin-Elmer 400 molecular beam epitaxial growth system and establishing capabilities for reflection high energy electron diffraction intensity dynamics, spectroscopic ellipsometry in the near Infrared regime, Hall mobility, capacitance voltage and current voltage measurements is provided, along with a description of the salient features of each of these systems. Keywords: Molecular Beam Epitaxy; Spectroscopic Ellipsometry; Photoluminescence; Hall Mobility.
Book Synopsis Molecular Beam Epitaxy of III–V Compounds by : K. Ploog
Download or read book Molecular Beam Epitaxy of III–V Compounds written by K. Ploog and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth and electronic properties of semiconductor thin films are becoming increasingly important for fundamental and applied research and for device applications. This book contains a comprehensive collection of over 1500 references covering the first 25 years of molecular beam epitaxy of III-V compound semiconductors. Molecular beam epitaxy is a versatile thin film growth technique which emerged from the 'Three-temperature method' de veloped in the 1950s and from surface kinetic studies performed in the 1960s. III-V semiconductors such as GaAs, AlAs, (Galn)As, InP, etc., play an important role in the application to optoelectronic and high-speed devices. Over the past three years the technology of molecular beam epitaxy has spread rapidly to most major research and development laboratories through out the world, and an increasing number of highly refined III-V semiconduc tor structures with exactly tailored electronic properties have been pro duced and explored for fundamental studies as well as for device appl ica tion. The comprehensive bibliography on this dramatically expanding topic helps chemists, engineers, materials scientists, and physicists working in semiconductor research and development areas to sort out the important lit erature of their particular interest. A direct reproduction of the output of a computer printer has been used to enable rapid publication and to keep printing costs low. The work was sponsored by the 'Bundesministerium fUr Forschung und Technologie' of the Federal Republic of Germany. Stuttgart, January 1984 K. Ploog . K. Graf Subject Categories and References Introduction ... Year 1977 ...
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Investigations of the Molecular Beam Epitaxial Growth and Characteristics of External Excitation Induced Non-Equilibrium Phases of Immiscible III-V Compound Semiconductors by : A. Madhukar
Download or read book Investigations of the Molecular Beam Epitaxial Growth and Characteristics of External Excitation Induced Non-Equilibrium Phases of Immiscible III-V Compound Semiconductors written by A. Madhukar and published by . This book was released on 1985 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: This program undertakes experimental and theoretical investigation of the role of growth kinetics and mechanism(s) in molecular beam epitaxial growth of III-V semiconductors and its possible control via laser excitation to effect metastable structures and phases. The experimental work on laser induced MBE growth is collaboratively carried out. Specifically, progress is reported on (i) Monte-Carlo computer simulations of MBE growth and predictions of the dynamics of reflection-high-energy-electron-diffraction (RHEED) intensities (ii) a theory of laser--induced-desorption (iii) Experimental studies of the RHEED intensity dynamics for GaAs/InxGa1-xAs(100) MBE growth (iv) the first realization of GaAs/InAs strained layer structures (with 7.4% lattice mismatch) and transmission electron microscopy studies showing high quality interfaces, and (v) establishment of a facility for magneto-absorption studies.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Some Investigations of Molecular Beam Epitaxial Growth of III-V Semiconductor Films Via Monte-Carlo Computer Simulations, Carrier Tunneling and Spectroscopic Ellipsometry by : A. Madbukar
Download or read book Some Investigations of Molecular Beam Epitaxial Growth of III-V Semiconductor Films Via Monte-Carlo Computer Simulations, Carrier Tunneling and Spectroscopic Ellipsometry written by A. Madbukar and published by . This book was released on 1984 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experimental work this past year was primarily directed toward enhancing the growth and characterization capabilities of the PI's laboratory. Significant improvements were completed on the MBE system and the in-situ ellipsometry apparatus was demonstrated in a bread board setup. Theoretical work consisted of preliminary Monte-Carlo investigation of the MBE growth III-V compounds. Extensive progress was made on modeling the phase separation occurring during growth of Al(x)Ga(1-x)As on (110) GaAs. A mismatch induced, strain dependent exchange reaction between Al and Ga was shown to give long period variations in the Al concentration. The specific predictions of the theory will be tested in a collaborative effort with JPL.
Download or read book Epitaxial Microstructures written by and published by Academic Press. This book was released on 1994-09-15 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. Atomic-level control of semiconductor microstructures Molecular beam epitaxy, metal-organic chemical vapor deposition Quantum wells and quantum wires Lasers, photon(IR)detectors, heterostructure transistors
Book Synopsis Proceedings of the Symposium on III-V Opto-Electronics Epitaxy and Device Related Processes by : V. G. Keramidas
Download or read book Proceedings of the Symposium on III-V Opto-Electronics Epitaxy and Device Related Processes written by V. G. Keramidas and published by . This book was released on 1983 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Some Investigations of Molecular Beam Epitaxial Growth of III-V Semiconductor Films Via Monte-Carlo Computer Simulations, Carrier Tunnelling and Spectroscopic Ellipsometry by : A. Madhukar
Download or read book Some Investigations of Molecular Beam Epitaxial Growth of III-V Semiconductor Films Via Monte-Carlo Computer Simulations, Carrier Tunnelling and Spectroscopic Ellipsometry written by A. Madhukar and published by . This book was released on 1987 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: From time of the inception of this work, it became clear at a relatively early stage that the USC MBE facility required major effort and investment to be able to grow reliable samples. In an effort to achieve this aim, the principal investigator was forced to take responsibility of the MBE growth as well - a situation not originally anticipated. Accordingly, major effort was spent making the USC MBE machine operational and putting in place basic support facilities (such as substrate cleaning and preparation). The situation with regard to the MBE machine thus, unfortunately, deprived us of appropriate GaAs/A1 Ga1-xAs samples to be able to proceed with certain experiments. We did, however, grow a few GaAs/A1x Ga1-xAs/GaAs tunnelling structures had them fabricated into actual tunnel structures, and carried ou Fowler-Norheim resonance tunnelling experiments at JPL. The results indicated that the interfacial quality of these structures were rather poor.
Book Synopsis State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) and Wide Bandgap Semiconductor Materials and Devices 7 by : F. Ren
Download or read book State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) and Wide Bandgap Semiconductor Materials and Devices 7 written by F. Ren and published by The Electrochemical Society. This book was released on 2006 with total page 491 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains papers from two symposia: State of the Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor Materials and Devices VII.
Book Synopsis Technical Reports Awareness Circular : TRAC. by :
Download or read book Technical Reports Awareness Circular : TRAC. written by and published by . This book was released on 1987-05 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Compound Semiconductors 2001 by : Y Arakawa
Download or read book Compound Semiconductors 2001 written by Y Arakawa and published by CRC Press. This book was released on 2002-09-30 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt: An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical
Download or read book Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Book Synopsis Epitaxial Growth and Characterization of Narrow Bandgap III-V Semiconductors and Related Semimetals by : Sukgeun Choi
Download or read book Epitaxial Growth and Characterization of Narrow Bandgap III-V Semiconductors and Related Semimetals written by Sukgeun Choi and published by . This book was released on 2006 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, by : M. G. Astles
Download or read book Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Download or read book Research in Progress written by and published by . This book was released on 1980 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analytical Techniques for the Characterization of Compound Semiconductors by : G. Bastard
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
