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Modelling Of Interface Carrier Transport For Device Simulation
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Book Synopsis Modelling of Interface Carrier Transport for Device Simulation by : Dietmar Schroeder
Download or read book Modelling of Interface Carrier Transport for Device Simulation written by Dietmar Schroeder and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
Book Synopsis Advanced Device Modeling and Simulation by : Tibor Grasser
Download or read book Advanced Device Modeling and Simulation written by Tibor Grasser and published by World Scientific. This book was released on 2003 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.
Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann
Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski
Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Book Synopsis Handbook of Optoelectronic Device Modeling and Simulation by : Joachim Piprek
Download or read book Handbook of Optoelectronic Device Modeling and Simulation written by Joachim Piprek and published by CRC Press. This book was released on 2017-10-10 with total page 835 pages. Available in PDF, EPUB and Kindle. Book excerpt: • Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
Book Synopsis Advanced Physical Models for Silicon Device Simulation by : Andreas Schenk
Download or read book Advanced Physical Models for Silicon Device Simulation written by Andreas Schenk and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Book Synopsis Modeling, Simulation, and Optimization of Integrated Circuits by : K. Antreich
Download or read book Modeling, Simulation, and Optimization of Integrated Circuits written by K. Antreich and published by Birkhäuser. This book was released on 2012-12-06 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: The third Conference on Mathematical Models and Numerical Simulation in Electronic Industry brought together researchers in mathematics, electrical engineering and scientists working in industry. The contributions to this volume try to bridge the gap between basic and applied mathematics, research in electrical engineering and the needs of industry.
Book Synopsis Introduction to Semiconductor Device Modelling by : Christopher M. Snowden
Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Book Synopsis Simulation of Semiconductor Processes and Devices 2004 by : Gerhard Wachutka
Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Book Synopsis Electrically Driven Quantum Dot Based Single-Photon Sources by : Markus Kantner
Download or read book Electrically Driven Quantum Dot Based Single-Photon Sources written by Markus Kantner and published by Springer Nature. This book was released on 2020-01-25 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor quantum optics is on the verge of moving from the lab to real world applications. When stepping from basic research to new technologies, device engineers will need new simulation tools for the design and optimization of quantum light sources, which combine classical device physics with cavity quantum electrodynamics. This thesis aims to provide a holistic description of single-photon emitting diodes by bridging the gap between microscopic and macroscopic modeling approaches. The central result is a novel hybrid quantum-classical model system that self-consistently couples semi-classical carrier transport theory with open quantum many-body systems. This allows for a comprehensive description of quantum light emitting diodes on multiple scales: It enables the calculation of the quantum optical figures of merit together with the simulation of the spatially resolved current flow in complex, multi-dimensional semiconductor device geometries out of one box. The hybrid system is shown to be consistent with fundamental laws of (non-)equilibrium thermodynamics and is demonstrated by numerical simulations of realistic devices.
Book Synopsis Simulation of Semiconductor Devices and Processes by : Heiner Ryssel
Download or read book Simulation of Semiconductor Devices and Processes written by Heiner Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Book Synopsis Simulation of Semiconductor Processes and Devices 2001 by : Dimitris Tsoukalas
Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Book Synopsis Nitride Semiconductor Light-Emitting Diodes (LEDs) by : Jian-Jang Huang
Download or read book Nitride Semiconductor Light-Emitting Diodes (LEDs) written by Jian-Jang Huang and published by Woodhead Publishing. This book was released on 2017-10-24 with total page 822 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Features new chapters on laser lighting, addressing the latest advances on this topic Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates
Book Synopsis MOS Devices for Low-Voltage and Low-Energy Applications by : Yasuhisa Omura
Download or read book MOS Devices for Low-Voltage and Low-Energy Applications written by Yasuhisa Omura and published by John Wiley & Sons. This book was released on 2017-02-28 with total page 483 pages. Available in PDF, EPUB and Kindle. Book excerpt: Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil
Book Synopsis Noise in Semiconductor Devices by : Fabrizio Bonani
Download or read book Noise in Semiconductor Devices written by Fabrizio Bonani and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 241 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
Book Synopsis Semiconductor Nanophotonics by : Michael Kneissl
Download or read book Semiconductor Nanophotonics written by Michael Kneissl and published by Springer Nature. This book was released on 2020-03-10 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.
Book Synopsis Advances in Time-Domain Computational Electromagnetic Methods by : Qiang Ren
Download or read book Advances in Time-Domain Computational Electromagnetic Methods written by Qiang Ren and published by John Wiley & Sons. This book was released on 2022-11-15 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Time-Domain Computational Electromagnetic Methods Discover state-of-the-art time domain electromagnetic modeling and simulation algorithms Advances in Time-Domain Computational Electromagnetic Methods delivers a thorough exploration of recent developments in time domain computational methods for solving complex electromagnetic problems. The book discusses the main time domain computational electromagnetics techniques, including finite-difference time domain (FDTD), finite-element time domain (FETD), discontinuous Galerkin time domain (DGTD), time domain integral equation (TDIE), and other methods in electromagnetic, multiphysics modeling and simulation, and antenna designs. The book bridges the gap between academic research and real engineering applications by comprehensively surveying the full picture of current state-of-the-art time domain electromagnetic simulation techniques. Among other topics, it offers readers discussions of automatic load balancing schemes for DG-FETD/SETD methods and convolution quadrature time domain integral equation methods for electromagnetic scattering. Advances in Time-Domain Computational Electromagnetic Methods also includes: Introductions to cylindrical, spherical, and symplectic FDTD, as well as FDTD for metasurfaces with GSTC and FDTD for nonlinear metasurfaces Explorations of FETD for dispersive and nonlinear media and SETD-DDM for periodic/ quasi-periodic arrays Discussions of TDIE, including explicit marching-on-in-time solvers for second-kind time domain integral equations, TD-SIE DDM, and convolution quadrature time domain integral equation methods for electromagnetic scattering Treatments of deep learning, including time domain electromagnetic forward and inverse modeling using a differentiable programming platform Ideal for undergraduate and graduate students studying the design and development of various kinds of communication systems, as well as professionals working in these fields, Advances in Time-Domain Computational Electromagnetic Methods is also an invaluable resource for those taking advanced graduate courses in computational electromagnetic methods and simulation techniques.
