Modeling of Ballistic Electron Emission Microscopy

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Book Synopsis Modeling of Ballistic Electron Emission Microscopy by : Yann Claveau

Download or read book Modeling of Ballistic Electron Emission Microscopy written by Yann Claveau and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: After the discovery of Giant Magneto-Resistance (GMR) by Albert Fert and Peter Grünberg, electronics had a breakthrough with the birth of a new branch called spintronics. This discipline, while still young, exploit the spin of electrons, for instance to store digital information. Most quantum devices exploiting this property of electrons consist of alternating magnetic and nonmagnetic thin layers on a semiconductor substrate. One of the best tools used for characterizing these structures, invented in 1988 by Kaiser and Bell, is the so-called Ballistic Electron Emission Microscope (BEEM). Originally, this microscope, derived from the scanning tunneling microscope (STM), was dedicated to the imaging of buried (nanometer-scale) objects and to the study of the potential barrier (Schottky barrier) formed at the interface of a metal and a semiconductor when placed in contact. With the development of spintronics, the BEEM became an essential spectroscopy technique but still fundamentally misunderstood. It was in 1996 that the first realistic model, based on the non-equilibrium Keldysh formalism, was proposed to describe the transport of electrons during BEEM experiments. In particular, this model allowed to explain some experimental results previously misunderstood. However, despite its success, its use was limited to the study of semi-infinite structures through a calculation method called decimation of Green functions. In this context, we have extended this model to the case of thin films and hetero-structures like spin valves: starting from the same postulate that electrons follow the band structure of materials in which they propagate, we have established an iterative formula allowing calculation of the Green functions of the finite system by tight-binding method. This calculation of Green's functions has been encoded in a FORTRAN 90 program, BEEM v3, in order to calculate the BEEM current and the surface density of states. In parallel, we have developed a simpler method which allows to avoid passing through the non-equilibrium Keldysh formalism. Despite its simplicity, we have shown that this intuitive approach gives some physical interpretation qualitatively similar to the non-equilibrium approach. However, for a more detailed study, the use of “non-equilibrium approach” is inevitable, especially for the detection of thickness effects linked to layer interfaces. We hope these both tools should be useful to experimentalists, especially for the Surfaces and Interfaces team of our department.

Theory of Ballistic Electron Emission Microscopy

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Total Pages : 934 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Theory of Ballistic Electron Emission Microscopy by : David Allen Pearson

Download or read book Theory of Ballistic Electron Emission Microscopy written by David Allen Pearson and published by . This book was released on 1999 with total page 934 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nanoscale Schottky Barrier Visualization Utilizing Computational Modeling and Ballistic Electron Emission Microscopy

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Total Pages : 98 pages
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Book Synopsis Nanoscale Schottky Barrier Visualization Utilizing Computational Modeling and Ballistic Electron Emission Microscopy by : Westly Nolting

Download or read book Nanoscale Schottky Barrier Visualization Utilizing Computational Modeling and Ballistic Electron Emission Microscopy written by Westly Nolting and published by . This book was released on 2018 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ballistic Electron Emission Microscopy Study of Novel Quantum Objects and Electronic Defects

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Total Pages : 0 pages
Book Rating : 4.:/5 (946 download)

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Book Synopsis Ballistic Electron Emission Microscopy Study of Novel Quantum Objects and Electronic Defects by :

Download or read book Ballistic Electron Emission Microscopy Study of Novel Quantum Objects and Electronic Defects written by and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the approximately 2 1/2 year period of the above AFOSR grant, substantial progress has been made in the further development of Ballistic Electron Emission Microscopy (BEEM) as a quantitative microscopic and spectroscopic tool for the characterization of buried quantum objects and electronic defects in semiconductors. During the period of this grant, we have done the following: Developed a theoretical model for the simulation of BEEM spectra. The model is compared with the experimentally obtained Second Derivative (SD) spectra for the prototypical case of Al(x)Ga(1-x)As/GaAs heterostructures. Quantitative numerical agreement is obtained. ii. We have extended the modeling with Monte Carlo simulations to get detailed understanding of BEEM spectra as a function of depth below the surface. iii. BEEM has been used for several spectroscopic studies on novel materials systems. These include observation of the splitting of the L band in GaInP due to ordering. the "local" conduction band offset of GaSb quantum.

Ballistic-electron-emission Microscopy of Silicon-based Schottky Systems

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Total Pages : 562 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Ballistic-electron-emission Microscopy of Silicon-based Schottky Systems by : Angela D. Davies

Download or read book Ballistic-electron-emission Microscopy of Silicon-based Schottky Systems written by Angela D. Davies and published by . This book was released on 1994 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ballistic Electron Emission Microscopy Studies of Lateral Variation in Schottky Barrier Height

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ISBN 13 :
Total Pages : 344 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Ballistic Electron Emission Microscopy Studies of Lateral Variation in Schottky Barrier Height by : Francesca Diane Pardo

Download or read book Ballistic Electron Emission Microscopy Studies of Lateral Variation in Schottky Barrier Height written by Francesca Diane Pardo and published by . This book was released on 1998 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this dissertation, three experiments are discussed. The first BEEM (Ballistic Electron Emission Microscopy) characterization of an InAlAs Schottky barrier, an investigation into the possibility of field pinch-off in Au/GaAs samples, and the first demonstration of BEEM on a cleaved multilayer cross-section. Covers results for BEEM research, focusing on BEEM resolution and noise analysis.

Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/oxide/si, High-k Oxide/si, and "end-on" Metal Contacts to Vertical Si Nanowires

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Total Pages : 188 pages
Book Rating : 4.:/5 (681 download)

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Book Synopsis Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/oxide/si, High-k Oxide/si, and "end-on" Metal Contacts to Vertical Si Nanowires by : Wei Cai

Download or read book Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/oxide/si, High-k Oxide/si, and "end-on" Metal Contacts to Vertical Si Nanowires written by Wei Cai and published by . This book was released on 2010 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this thesis, three separate experiments involving electronic materials are described. Nanometer-spatial resolution ballistic electron emission microscopy (BEEM) is used to study the inhomogeneity of metal-bialyer/SiO2 interface, and small size and restricted geometry effect of "end-on" metal contacts to vertical Si NWs embedded in spin-on glass. BEEM and internal photoemission (Int-PE) are also combined for the first time to study conduction and valence band offsets between Si and promising high-k (high dielectric constant) oxides: Sc2O3 and Lu2O3. In the first experiment, a comparison of the dependence on gate voltage of the average energy barrier measured by BEEM of a metal bi-layer Pt/Al/SiO2/Si sample and a Pt/SiO2/Si sample suggests that the metal/oxide interface of the Pt/Al/SiO2/Si sample is laterally inhomogeneous at nm length scales. However, BEEM images of the bi-layer sample do not show significantly larger lateral variations than observed on a (uniform) Pt/SiO2/Si sample, indicating that any inhomogeneous "patches" of lower energy barrier height have size smaller than the lateral resolution of BEEM, estimated for these samples to be ~10 nm. Finite element electrostatic simulations of an assumed inhomogeneous interface with nm size patches of different effective work function can fit the experimental data of the bi-layer sample much better than an assumed homogenous interface, indicating that bi-layer film is in fact laterally inhomogeneous at the nm scale. Int-PE measurements on 20 nm-thick epitaxial Sc2O3 and Lu2O3 film on Si (111) show the existence of a lower "tail state" conduction band (CB) extending ~1 eV below the upper CB (similar to that reported for amorphous Sc2O3 and Lu2O3 films), indicating that these states are not simply due to disorder in amorphous films. BEEM measurements on epitaxial Sc2O3/Si also show that this lower CB supports elastic hot-electron transport even against an applied electric field, indicating transport via extended rather than localized states. BEEM measurements on "end-on" Au contacts to vertical Si NWs show strong suppression of hot-electron injection at higher injected current in the NWs (produced either by increasing the tip voltage or the tunneling current) comparing to a regular Au/Si junction, suggesting that this current suppression is due to a steady-state charge build-up in the NW that increase as more current is injected into the NW. The BEEM current suppression of most NWs was also found to increase strongly at lower temperature, indicating more charge build-up at lower temperature. Time-dependent current suppression due to changing steady-state charge build-up in the NWs was observed when the tunnel current was abruptly increased and decreased, directly supporting a model in which the BEEM current suppression is due to (temperature-dependent) steady-state charge build up. Those electrons might be trapped at the NW/SiO2 interface close to the metal/Si NW contact, consistent with finite element simulations. Our BEEM measurements also show that the local Schottky barrier height (SBH) at the edge of two separate NWs is ~20 meV lower than at the NWs center. Finite element simulation suggests that the lower SBH at the contact edge might be due to the NW/oxide interface states charge.

Use of Ballistic-Electron-Emission Microscopy to Study Mechanisms for Long Wavelength Schottky-Barrier Infrared Detectors

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Total Pages : 48 pages
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Book Synopsis Use of Ballistic-Electron-Emission Microscopy to Study Mechanisms for Long Wavelength Schottky-Barrier Infrared Detectors by :

Download or read book Use of Ballistic-Electron-Emission Microscopy to Study Mechanisms for Long Wavelength Schottky-Barrier Infrared Detectors written by and published by . This book was released on 1997 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this final report, we have summarized our work in five areas. The first area, covered in Sec. I, is the development of calcium fluoride tunnel barriers which may be used to increase the operating temperature of PtSi SBIRDs. In particular, we have demonstrated a new technique for growth of exactly two monolayers of CaF2 on Si(l 11) substrates. In Sec. II, we describe our work with ballistic electron emission microscopy to determine electron scattering processing in thin metal layers and at metaliSi interfaces. During this contract, we constructed an in-situ STM/BEEM system which allowed us to make measurements directly on PtSi and Pt surfaces without having to protect these surfaces from oxidation. Our preliminary results with this instrument are described in Sec. III. Sec. IV describes the theoretical model we have developed which explains why the Fowler-like behavior typically observed in the photoresponse for many Schottky-barrier metal/semiconductor interfaces does not prove that crystal momentum parallel to the interface is conserved. In Sec. V, we describe the Monte-Carlo program that we have developed to model ballistic electron scattering in this metal layers and across the metal/semiconductor interface. Initial results demonstrate that electron (or hole) scattering at the metal/semiconductor interface may, in fact, be the dominant transmission mechanism for most (nonpitaxial) metal/semiconductor systems.

BEEM 94. Annual Workshop on Ballistic Electron Emission Microscopy (5th) Held in New York on January 24, 1994

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ISBN 13 :
Total Pages : 44 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis BEEM 94. Annual Workshop on Ballistic Electron Emission Microscopy (5th) Held in New York on January 24, 1994 by :

Download or read book BEEM 94. Annual Workshop on Ballistic Electron Emission Microscopy (5th) Held in New York on January 24, 1994 written by and published by . This book was released on 1994 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: Partial contents: Electron transport across interfaces and surfaces: an overview; BEEM studies of strain-tuned semiconductor interfaces; Transport studies in semiconductor heterostructures using BEEM; Spectroscopic studies of quantum-wells and -wires using an STM; BEEM in pinholes of NiS2 films on n- Si(111)-7x7: determination of the impact ionization quantum yield in Si; Low- temperature UHV BEEM of epitaxial CoSi2/Si(111); Interfacial barrier studies of epitaxial CoGa on n-type (100) GaAs with BEEM; BEEM on Au/Si(111)7x7 and Au/ CaF2/Si(111)7x7; Temperature dependence of Schottky barriers as probed by BEEM; Nanoscopic barrier height distributions at metal/semiconductor interfaces and observation of critical lengths; BEEM studies of reversed-biased Schottky diodes; Ballistic models applied to low-temperature BEEM measurements of Au/Si interfaces; Electron inelastic mean free path and spatial resolution of BEEM.

Theory of Ballistic Electron Emission Microscopy

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Total Pages : 51 pages
Book Rating : 4.:/5 (487 download)

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Book Synopsis Theory of Ballistic Electron Emission Microscopy by : P. L. de Andres

Download or read book Theory of Ballistic Electron Emission Microscopy written by P. L. de Andres and published by . This book was released on 2001 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ballistic Electrons

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ISBN 13 :
Total Pages : 294 pages
Book Rating : 4.:/5 (531 download)

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Book Synopsis Ballistic Electrons by : Ian Appelbaum

Download or read book Ballistic Electrons written by Ian Appelbaum and published by . This book was released on 2003 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis describes research to theoretically model and experimentally measure electronic systems which employ ballistic electron emission. First, a Monte-Carlo framework for simulating electron injection from a tunnel junction emitter into a semiconductor collector is presented in detail and a few applications of this theory are described. Second, a method of treating ballistic electron transport through nano-scale heterostructures by considering realistic, atomic-scale periodic potentials is examined. Third, experimental results toward development of a novel scanning-probe microscopy for the local study of buried luminescent heterostructure layers is presented. Finally, a number of future research directions suggested by these results are described.

Ballistic Electron Emission Microscopy

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Total Pages : 69 pages
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Book Synopsis Ballistic Electron Emission Microscopy by : Robert Miles

Download or read book Ballistic Electron Emission Microscopy written by Robert Miles and published by . This book was released on 1989 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Demonstration of Ballistic Electron Emission Microscopy

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ISBN 13 :
Total Pages : 96 pages
Book Rating : 4.:/5 (376 download)

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Book Synopsis Demonstration of Ballistic Electron Emission Microscopy by : Mary Alyssa Drummond

Download or read book Demonstration of Ballistic Electron Emission Microscopy written by Mary Alyssa Drummond and published by . This book was released on 1997 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Schottky Barrier Formation at Metal-quantum Well Interfaces Studied with Ballistic Electron Emission Microscopy

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Total Pages : 233 pages
Book Rating : 4.:/5 (71 download)

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Book Synopsis Schottky Barrier Formation at Metal-quantum Well Interfaces Studied with Ballistic Electron Emission Microscopy by : Cristian Alexandru Tivarus

Download or read book Schottky Barrier Formation at Metal-quantum Well Interfaces Studied with Ballistic Electron Emission Microscopy written by Cristian Alexandru Tivarus and published by . This book was released on 2005 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: A number of possible near and long term semiconductor device technologies rely on abrupt metal-semiconductor interfaces with nm-dimensions, and with internal nm-scale inhomogeneity. It is therefore very important to be able probe the electronic properties of these buried interfaces with sub-10 nm resolution and to find out the impact of small-size effects on their transport properties. In our study we used Ballistic Electron Emission Microscopy (BEEM) and finite-element electrostatic modeling to quantify how small-size effects modify the energy barrier at metal/semiconductor quantum wells (QWs), formed by making Schottky contacts to cleaved edges of GaAs quantum wells. Our model semiconductor heterostructure is formed as a sequence of AlGaAs/GaAs/AlGaAs layers and contains a sequence of GaAs QWs with thickness between 1 and 15 nm. The Schottky barrier height (SBH) measurements as a function of QW thickness showed that the SBH value increases as the QW thickness is decreased, by up to 140 meV for a 1 nm thick QW. This is mostly due to a large quantum-confinement increase (200 meV for a 1nm QW), modified by smaller decreases due to environmental electric field effects. Our modeling gave excellent quantitative agreement with measurements for a wide range of QW thickness when both these effects are considered. In a separate study, the cleaved QW were used as nm-apertures to estimate the resolution of BEEM as a function of metal film thickness. We found that BEEM resolution degrades as the top metal film layer is made thicker, from 12 nm for a 4 nm thick Au layer, up to 22 nm for a 15 nm thick Au layer. Also presented is modeling of the electrostatic potential profile around charged threading dislocations (TD) in GaN, close to a metal-semiconductor interface, and its dependence on the energy of acceptor sites along the dislocation. We found that for energy values higher than 1.13 eV the near interface TD acceptors are completely filled right up to the interface. This results in a very large negative space charge and an increase in the local barrier height close to the TD core that should be observable by techniques such as BEEM.

Ballistic Electron Emission Microscopy of Magnetic Thin Films

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ISBN 13 :
Total Pages : 154 pages
Book Rating : 4.:/5 (479 download)

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Book Synopsis Ballistic Electron Emission Microscopy of Magnetic Thin Films by : Thomas Handorf

Download or read book Ballistic Electron Emission Microscopy of Magnetic Thin Films written by Thomas Handorf and published by . This book was released on 2001 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Modeling Nanoscale Imaging in Electron Microscopy

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Publisher : Springer Science & Business Media
ISBN 13 : 1461421918
Total Pages : 190 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Modeling Nanoscale Imaging in Electron Microscopy by : Thomas Vogt

Download or read book Modeling Nanoscale Imaging in Electron Microscopy written by Thomas Vogt and published by Springer Science & Business Media. This book was released on 2012-03-02 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modeling Nanoscale Imaging in Electron Microscopy presents the recent advances that have been made using mathematical methods to resolve problems in microscopy. With improvements in hardware-based aberration software significantly expanding the nanoscale imaging capabilities of scanning transmission electron microscopes (STEM), these mathematical models can replace some labor intensive procedures used to operate and maintain STEMs. This book, the first in its field since 1998, will also cover such relevant concepts as superresolution techniques, special denoising methods, application of mathematical/statistical learning theory, and compressed sensing.

Ballistic Electron Emission Microscopy on Low Dimensional Structures

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Total Pages : 95 pages
Book Rating : 4.:/5 (827 download)

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Book Synopsis Ballistic Electron Emission Microscopy on Low Dimensional Structures by : Michaela Klemenc

Download or read book Ballistic Electron Emission Microscopy on Low Dimensional Structures written by Michaela Klemenc and published by . This book was released on 2000 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: