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Modeling And Simulation Of High Speed Semiconductors Used In Gan And Sic Power Converters
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Author :Ali Rahimi (Auteur de Modeling and simulation of high speed semiconductors used in GaN and SiC power converters) Publisher : ISBN 13 : Total Pages :0 pages Book Rating :4.:/5 (133 download)
Book Synopsis Modeling and Simulation of High Speed Semiconductors Used in GaN and SiC Power Converters by : Ali Rahimi (Auteur de Modeling and simulation of high speed semiconductors used in GaN and SiC power converters)
Download or read book Modeling and Simulation of High Speed Semiconductors Used in GaN and SiC Power Converters written by Ali Rahimi (Auteur de Modeling and simulation of high speed semiconductors used in GaN and SiC power converters) and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Spice Modeling and Simulation of Silicon-carbide Power Modules by : Blake Whitmore Nelson
Download or read book Spice Modeling and Simulation of Silicon-carbide Power Modules written by Blake Whitmore Nelson and published by . This book was released on 2017 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: The design of power converters relies on computer modeling to accurately predict system electrical and thermal behavior prior to implementation. In the field of wide bandgap semiconductors, the extraordinarily high switching speed of silicon-carbide devices dictates that traditionally inconsequential parasitic elements can impact system level behavior. This is especially true for systems implementing multi-chip power modules. To ensure accurate simulations, a new and precise methodology for modeling these systems is needed. This thesis formulates a measurement based and empirically-validated methodology for modeling wide bandgap power modules. First, impedance analysis is used to create a parasitic model of the power module's frequency domain behavior. Second, double pulse testing is implemented to characterize the dynamic behavior of the power module. Next, a SPICE model is developed from the frequency and time domain measurements. Finally, the model is validated through its accurate prediction of time domain waveforms and switching losses.
Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-09-30 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Book Synopsis Wide Bandgap (SiC/GaN) Power Devices Characterization and Modeling by : Ke Li
Download or read book Wide Bandgap (SiC/GaN) Power Devices Characterization and Modeling written by Ke Li and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compared to traditional silicon (Si) semiconductor material, wide bandgap (WBG) materials like silicon carbide (SiC) and gallium nitride are gradually applied to fabricate power semiconductor devices, which are used in power converters to achieve high power efficiency, high operation temperature and high switching frequency. As those power devices are relatively new, their characterization and modeling are important to better understand their characteristics for better use. This dissertation is mainly focused on those WBG power semiconductor devices characterization, modeling and fast switching currents measurement. In order to measure their static characteristics, a single-pulse method is presented. A SiC diode and a "normally-off" SiC JFET is characterized by this method from ambient temperature to their maximal junction temperature with the maximal power dissipation around kilowatt. Afterwards, in order to determine power device inter-electrode capacitances, a measurement method based on the use of multiple current probes is proposed and validated by measuring inter-electrode capacitances of power devices of different technologies. Behavioral models of a Si diode and the SiC JFET are built by using the results of the above characterization methods, by which the evolution of the inter-electrode capacitances for different operating conditions are included in the models. Power diode models are validated with the measurements, in which the current is measured by a proposed current surface probe.
Book Synopsis Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter by : Yang Luo
Download or read book Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter written by Yang Luo and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, wide-bandgap devices (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) transistors have drawn significant research attention in power conversion applications where higher efficiency, higher power density and lower cost are required, for example, in electric vehicle (EV) applications. Owing to its better figures of merit on on-resistance, switching speed and junction temperature, enhancement-mode GaN high electron mobility transistors (HEMTs) are able to be operated with switching frequency up to the megahertz range, through which the size of passive components in the power converters can be significantly reduced. Consequently, the power converter's integration level and power density can be increased. In GaN-based power converters, the switching energy loss increases naturally along with the switching frequency, which is the dominant loss component. Consequently, it is always one of the top priority performances to be considered in research and development activities. For device manufacturers, with access to internal materials and dimensional parameters, physics-based device models are usually used. Although these models can reveal detailed characteristics of the devices, they are not accessible to the public and can be very time-consuming to develop. Analytical models, that can emulate the transistor's dynamic behaviour and predict the switching energy loss without consuming too much computing resources, are always an essential tool to help provide guidelines to engineers for circuit design and performance optimization purposes. This thesis develops a computationally inexpensive and straightforward switching transient model which proves to be more accurate than conventional model through simulation and experiments. Currently, in the commercial market, there are only a few mature designs of GaN three-phase inverter products, and most of them are costly. This unavoidable phenomenon is led by the fact that the gate driver and power loop design for GaN is demanding. Some companies such as EPC, Navitas and Power Integrations are committed to monolithic-integrated gate drivers, but they are complex and expensive. Thus, this thesis also aims to design a GaN-based three-phase inverter with low cost and low complexity in the gate drive circuit. In addition, to achieve high performance GaN-based inverter, parasitic components in the power loop have to be minimized. In this thesis study, parasitic parameters of the power loop are extracted through Ansys Q3D simulation and then validated through experimental test results. With accurate parasitic parameters, the layout of the PCBs is improved to achieve better inverter performance.
Book Synopsis Wide-Bandgap Semiconductors by : M. S. Chinthavali
Download or read book Wide-Bandgap Semiconductors written by M. S. Chinthavali and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.
Book Synopsis Research on Modern Power Semiconductor Modelling Methodology for Efficiency Evaluation of Power Electronic Systems in Electromagnetic Transient Simulation by : Yanming Xu
Download or read book Research on Modern Power Semiconductor Modelling Methodology for Efficiency Evaluation of Power Electronic Systems in Electromagnetic Transient Simulation written by Yanming Xu and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power electronics technology has rapidly developed during the past decades. Power electronics systems aim to achieve high efficiency as power conversion interfaces while fulfilling the performance and reliability requirements. The key to achieving these objectives is power semiconductors, which dictate the power electronics system's efficiency, power density, and reliability. In recent years, traditional Silicon (Si) devices are reaching their material limits. Meanwhile, new Wide-Bandgap (WBG) devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) devices have been commercialized, featuring high breakdown voltage, fast switching speed, and high thermal capability. On the other hand, semiconductor devices are typically exposed to repetitive heat pulses and are often the most critical components affecting system reliability. Consequently, a comprehensive modelling method for modern power semiconductors that can describe various devices' switching behaviors is highly desirable by power electronics engineers and manufacturers. This research focuses on developing a simulation-based modelling methodology for modern power semiconductors to evaluate the power electronics system's efficiency. A multi-level simulation strategy has been proposed and implemented in PSCAD/EMTDC. A generalized transient semiconductor model has been developed, which can reproduce the device's switching behaviors. Subsequently, the power losses are obtained to form a multi-dimensional power loss look-up table under a wide range of operating conditions. A dynamic thermal model for temperature estimation, and a typical electrical network using simple switch models for semiconductor devices have been implemented. The junction temperature is updated every switching cycle by the power loss with a thermal model and influence back to the electrical simulation. In this way, a closed-loop electro-thermal simulation is formed to evaluate both electrical and thermal performances in a single simulator with a range of acceptable accuracy. A double pulse test platform has been designed and built for device characterizations and power loss verifications. Moreover, a single-phase grid-tied buck-boost type inverter application has been selected as a case study and built to study the proposed method. The measured results indicate that the proposed approach is highly promising for power electronics engineers to evaluate and optimize a system during the early design stage.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis A Methodology for Designing SiC and GaN Device Based Converters for Automotive Applications by : Joao Soares de Oliveira
Download or read book A Methodology for Designing SiC and GaN Device Based Converters for Automotive Applications written by Joao Soares de Oliveira and published by . This book was released on 2021 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide band-gap (WBG) devices enable power converter designs at higher frequency, power density, and efficiency, as compared to silicon-based converters. The coexistence for SiC (Silicon Carbide) and GaN (Gallium Nitride) devices in the ranges 600-900 V motivates a specific study of these components and the development of methods to perform better selection relying on the application, particularly for automotive applications. The proposed methodology starts with static and dynamic tests performed on SiC and GaN devices to validate their models. GaN power devices allow the building of the most integrated converters. Here, an instrumented PCB (Printed Circuit Board) is developed to measure and estimate switching losses including the measurement points needed for this purpose. The parasitic elements of the PCB layout extracted by ANSYS Q3D and the measurement instrument models are also included in the simulation model. Thus, by means of an experimentally validated model, it will be possible to evaluate the total losses in an optimized circuit without probes. Meanwhile, for SiC devices, an evaluation board is used, and an estimating method for inductance parasitic extraction is performed. The switching loss estimation is an important step for power converter design. Moreover, the consequences of faster switching on the gate driver design and board layout generate new challenges for WBG-based converters. An accurate switching loss estimation is a helpful step because it allows for the adjustment of different circuit layouts based on the simulation results. However, the instrumented PCB does not predict the switching losses in an optimized converter, but only on the instrumented PCB. The simulation enables the prediction of switching losses in more realistic converters. Finally, a simulation for each target device (SiC and GaN) is developed considering the main parasitic elements and the measurement instrument models. Thus, the switching losses are computed and compared to experimental results. Since the whole system is validated, to compare the SiC and GaN devices for automotive applications, an optimized DC-DC converter simulation is used for comparing each device under different operation points of the converter.
Book Synopsis Advanced High Speed Devices by : Michael S. Shur
Download or read book Advanced High Speed Devices written by Michael S. Shur and published by World Scientific. This book was released on 2010 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. Sample Chapter(s). Chapter 1: Simulation and Experimental Results on Gan Based Ultra-Short Planar Negative Differential Conductivity Diodes for THZ Power Generation (563 KB). Contents: Simulation and Experimental Results on GaN Basee Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation (B Aslan et al.); Millimeter Wave to Terahertz in CMOS (K K O S Sankaran et al.); Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination (V S Chivukula et al.); The First 70nm 6-Inch GaAs PHEMT MMIC Process (H Karimy et al.); Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces (K Tang et al.); GaN Transistors for Power Switching and Millimeter-Wave Applications (T Ueda et al.); Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles (D P Urciuoli & V Veliadis); and other papers. Readership: Electronic engineers, solid state physicists, graduate students studying physics or electrical engineering.
Book Synopsis Real-Time Simulation Technology for Modern Power Electronics by : Hao Bai
Download or read book Real-Time Simulation Technology for Modern Power Electronics written by Hao Bai and published by Elsevier. This book was released on 2023-05-19 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Real-Time Simulation Technology for Modern Power Electronics provides an invaluable foundation and state-of-the-art review on the most advanced implementations of real-time simulation as it appears poised to revolutionize the modeling of power electronics. The book opens with a discussion of power electronics device physic modeling, component modeling, and power converter modeling before addressing numerical methods to solve converter model, emphasizing speed and accuracy. It discusses both CPU-based and FPGA-based real-time implementations and provides an extensive review of current applications, including hardware-in-the-loop and its case studies in the micro-grid and electric vehicle applications. The book closes with a review of the near and long-term outlooks for the evolving technology. Collectively, the work provides a systematic resource for students, researchers, and engineers in the electrical engineering and other closely related fields. Introduces the theoretical building blocks of real-time power electronic simulation through advanced modern implementations Includes modern case studies and implementations across diverse applications, including electric vehicle component testing and microgrid controller testing Discusses FPGA-based real-time simulation techniques complete with illustrative examples, comparisons with CPU-based simulation, computational performance and co-simulation architectures
Book Synopsis Circuit Modeling and Performance Evaluation of GaN Power HEMT in DC-DC Converters by : Krushal S. Shah
Download or read book Circuit Modeling and Performance Evaluation of GaN Power HEMT in DC-DC Converters written by Krushal S. Shah and published by . This book was released on 2011 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: The power generated by renewable sources such as solar photo-voltaic (PV) arrays and wind turbines is time varying and unpredictable. In order to minimize the wastage of power obtained from such sources, there is a great need of efficient power converters which are compact and can effectively manage power in Smart Grid applications. The design of such power converters would require the use of new semiconductor materials, novel device structures, improved switching and control circuits, and advanced packaging technologies. Wide bandgap materials are promising for RF/microwave and power switching electronics. Among these materials, III-V Nitrides - especially Gallium Nitride (GaN), and Silicon Carbide (SiC) are heavily investigated by industry because of their superior electrical and thermal properties, and improved radiation hardness compared to the standard semiconductor material -silicon. A smart DC microgrid suitable for high-penetration in commercial applications and that efficiently utilizes energy available from distributed, renewable generators is described. GaN HEMTs based converters should be incorporated in the DC microgrid. It iv is shown that the proposed DC power distribution system can produce savings in excess of 10-15% over the current approach that uses inverters. Performance evaluation between silicon MOSFET and GaN HEMT is presented for chip-scale and maximum peak power tracking DC-DC power converter applications. The current circuit model available for GaN HEMTs does not converge for converter topology. Thus circuit calculations are based on improved circuit model for the FET with accurate description of capacitances and thermal on-resistance. It is shown that GaN power HEMTs used in a synchronous buck converter topology (for a 19/1.2VDC, 7.2W) can potentially lead to nearly 77 % power conversion efficiency at 25°C when switched at 5 MHz. However, results show that the current formulation for loss calculation in the topology described is erroneous and so there is a need of new loss formulation and device selection criteria based on circuit dynamics and device parameters. Similarly simulations were carried out for a DC-DC boost converter topology (200/380VDC, 10kW) and it has been shown to have 93 % power conversion efficiency at 25°C when switched at 1 MHz. But using new semiconductors materials like GaN HEMT and SiC in this case causes high dv/dt stress on switch and diode during switching which may cause failure of device.
Book Synopsis Frequency Characterization of Si, SiC, and GaN MOSFETs Using Buck Converter in CCM as an Application by : Keshava Gopalakrishna
Download or read book Frequency Characterization of Si, SiC, and GaN MOSFETs Using Buck Converter in CCM as an Application written by Keshava Gopalakrishna and published by . This book was released on 2013 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: Present day applications using power electronic converters are focusing towards improving the speed, efficiency, and robustness. This led to the implementation of new devices in such converters where speed and efficiency are of concern. As silicon (Si) based power devices are approaching their operational performance limits with respect to speed, it is essential to analyze the properties of new devices, which are capable of replacing silicon based devices. Wide band-gap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are such materials, whose material properties show promising advantages for power electronic applications. This thesis focuses on the comparison of Si, SiC, and GaN based power devices. A detailed comparison in terms of the material performance based on their figures-of-merit will be discussed. In this thesis, a performance evaluation of Si, SiC, and GaN based power devices used as a high-side switch in a buck DC-DC converter will be performed. A buck converter having specifications: output voltage of 12 V and output power of 120 W. Initially, a design example for switching frequency of 100 kHz will be discussed. Further, an evaluation of the same for increase in switching frequencies will be performed. Finally, analyses of the power loss and efficiency of these devices will be made along with its validation using PSpice, SABER and MATLAB simulation software. It will be shown that the theoretical performance analyses are in accordance with the obtained simulated results. Finally, it will be shown that GaN based power devices have improved operational capabilities at high frequencies than those of Si and SiC.
Book Synopsis Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties by :
Download or read book Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties written by and published by . This book was released on 2005 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide as a semiconductor material possesses several significant physical properties which make it superior for applications to high power devices. This report documents the efforts to develop, demonstrate, and optimize the design and fabrication methodologies for the realization of power vertical junction field effect transistors in the 4H-polytype of silicon carbide. Theoretical prediction and modeling simulation, incorporating all the significant SiC specific device physics, are utilized to develop a design methodology which is to ultimately be used for device fabrication. The results illustrate that good agreement between theoretical prediction and accurately modeled simulations can be achieved and enable the forecasting of device performance as a function of temperature, design modification, and variations in material transport characteristics.
Book Synopsis RF Power Amplifiers by : Marian K. Kazimierczuk
Download or read book RF Power Amplifiers written by Marian K. Kazimierczuk and published by John Wiley & Sons. This book was released on 2014-10-14 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition of the highly acclaimed RF Power Amplifiers has been thoroughly revised and expanded to reflect the latest challenges associated with power transmitters used in communications systems. With more rigorous treatment of many concepts, the new edition includes a unique combination of class-tested analysis and industry-proven design techniques. Radio frequency (RF) power amplifiers are the fundamental building blocks used in a vast variety of wireless communication circuits, radio and TV broadcasting transmitters, radars, wireless energy transfer, and industrial processes. Through a combination of theory and practice, RF Power Amplifiers, Second Edition provides a solid understanding of the key concepts, the principle of operation, synthesis, analysis, and design of RF power amplifiers. This extensive update boasts: up to date end of chapter summaries; review questions and problems; an expansion on key concepts; new examples related to real-world applications illustrating key concepts and brand new chapters covering ‘hot topics’ such as RF LC oscillators and dynamic power supplies. Carefully edited for superior readability, this work remains an essential reference for research & development staff and design engineers. Senior level undergraduate and graduate electrical engineering students will also find it an invaluable resource with its practical examples & summaries, review questions and end of chapter problems. Key features: • A fully revised solutions manual is now hosted on a companion website alongside new simulations. • Extended treatment of a broad range of topologies of RF power amplifiers. • In-depth treatment of state-of-the art of modern transmitters and a new chapter on oscillators. • Includes problem-solving methodology, step-by-step derivations and closed-form design equations with illustrations.
Author :Bejoy N. Pushpakaran Publisher :World Scientific Publishing Company ISBN 13 :9789813237827 Total Pages :0 pages Book Rating :4.2/5 (378 download)
Book Synopsis Gallium-Nitride-Based Power Electronic Converter Design, Prototyping and Testing for Automotive Power Management and Renewable Energy Applications by : Shayan Dargahi
Download or read book Gallium-Nitride-Based Power Electronic Converter Design, Prototyping and Testing for Automotive Power Management and Renewable Energy Applications written by Shayan Dargahi and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
