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Author : Deborah M. DeSimone
Publisher :
ISBN 13 :
Total Pages : 294 pages
Book Rating : 4.E/5 ( download)
Download or read book Mn and Mg as P-type Dopants in GaAs Grown by MBE written by Deborah M. DeSimone and published by . This book was released on 1982 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Susan C. Palmateer
Publisher :
ISBN 13 :
Total Pages : 286 pages
Book Rating : 4.E/5 ( download)
Download or read book Manganese Incorporation in Gallium Arsenide Grown by Molecular Beam Epitaxy written by Susan C. Palmateer and published by . This book was released on 1982 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John Orton
Publisher : OUP Oxford
ISBN 13 : 0191061166
Total Pages : 529 pages
Book Rating : 4.1/5 (91 download)
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author : Hajime Asahi
Publisher : John Wiley & Sons
ISBN 13 : 1119355001
Total Pages : 514 pages
Book Rating : 4.1/5 (193 download)
Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-01-30 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Author : G.W. Cullen
Publisher : Elsevier
ISBN 13 : 1483223574
Total Pages : 409 pages
Book Rating : 4.4/5 (832 download)
Download or read book Vapour Growth and Epitaxy written by G.W. Cullen and published by Elsevier. This book was released on 2013-09-03 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This conference highlights the crystal growth aspects of the preparation, characterization, and perfection of thin films of electronic interest. This book is organized into two sections encompassing 54 chapters. The first section considers the fundamental and applied crystal growth studies of silicon, III-V and II-VI compounds, and magnetic garnets. This section also describes the structure of autoepitaxial diamond films and the morphology of single crystals grown from the vapor phase. The second section deals with nucleation and crystal growth kinetic studies of whiskers and the fabrication of solar cells. This section further surveys the equilibrium, kinetics, and epitaxy in the chemical vapor deposition of silicon compounds.
Author : Marian A. Herman
Publisher : Springer Science & Business Media
ISBN 13 : 3642800602
Total Pages : 465 pages
Book Rating : 4.6/5 (428 download)
Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.
Author : Krishna Seshan
Publisher : CRC Press
ISBN 13 : 1482269686
Total Pages : 658 pages
Book Rating : 4.4/5 (822 download)
Download or read book Handbook of Thin Film Deposition Techniques Principles, Methods, Equipment and Applications, Second Editon written by Krishna Seshan and published by CRC Press. This book was released on 2002-02-01 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and Applications, Second Edition explores the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition tec
Author : L.L. Chang
Publisher : Springer Science & Business Media
ISBN 13 : 940095073X
Total Pages : 718 pages
Book Rating : 4.4/5 (9 download)
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Author : Shiuh-Hui Chen
Publisher :
ISBN 13 :
Total Pages : 362 pages
Book Rating : 4.E/5 ( download)
Download or read book Metal Reactions with Semiconductors in Ni-Si, Ni-GaAs and Sn-GaAs Systems Studied by Transmission Electron Microscopy written by Shiuh-Hui Chen and published by . This book was released on 1985 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Brian R. Pamplin
Publisher : Elsevier
ISBN 13 : 1483161463
Total Pages : 630 pages
Book Rating : 4.4/5 (831 download)
Download or read book Crystal Growth written by Brian R. Pamplin and published by Elsevier. This book was released on 2013-09-11 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystal Growth, Second Edition deals with crystal growth methods and the relationships between them. The chemical physics of crystal growth is discussed, along with solid growth techniques such as annealing, sintering, and hot pressing; melt growth techniques such as normal freezing, cooled seed method, crystal pulling, and zone melting; solution growth methods; and vapor phase growth. This book is comprised of 15 chapters and opens with a bibliography of books and source material, highlighted by a classification of crystal growth techniques. The following chapters focus on the molecular state of a crystal when in equilibrium with respect to growth or dissolution; the fundamentals of classical and modern hydrodynamics as applied to crystal growth processes; creation, control, and measurement of the environment in which a crystal with desired properties can grow; and growth processes where transport occurs through the vapor phase. The reader is also introduced to crystal growth with molecular beam epitaxy; crystal pulling as a crystal growth method; and zone refining and its applications. This monograph will be of interest to physicists and crystallographers.
Author : J R Leite
Publisher : World Scientific
ISBN 13 : 9814556394
Total Pages : 582 pages
Book Rating : 4.8/5 (145 download)
Download or read book Semiconductor Physics - Proceedings Of The 5th Brazilian School written by J R Leite and published by World Scientific. This book was released on 1992-11-06 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 842 pages
Book Rating : 4.:/5 (318 download)
Download or read book Soviet Journal of Quantum Electronics written by and published by . This book was released on 1979 with total page 842 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Herbert C. Freyhardt
Publisher : Springer Science & Business Media
ISBN 13 : 3642676111
Total Pages : 171 pages
Book Rating : 4.6/5 (426 download)
Download or read book III–V Semiconductors written by Herbert C. Freyhardt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.
Author : Alfred Cho
Publisher : American Institute of Physics
ISBN 13 :
Total Pages : 602 pages
Book Rating : 4.F/5 ( download)
Download or read book Molecular Beam Epitaxy written by Alfred Cho and published by American Institute of Physics. This book was released on 1994 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Market: Materials scientists and graduate students. This volume includes the most significant contributions of world- renowned scientists in the field of Molecular Beam Expitaxy (MBE). MBE is an extremely important technique for growing single crystals by making beams of atoms and molecules strike a crystalline substrate in a vacuum. This technique has found broad applications in modern materials science.
Author :
Publisher : Academic Press
ISBN 13 : 0080864236
Total Pages : 405 pages
Book Rating : 4.0/5 (88 download)
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1988-12-24 with total page 405 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Author : Kompa, Günter
Publisher : kassel university press GmbH
ISBN 13 : 3862195414
Total Pages : 762 pages
Book Rating : 4.8/5 (621 download)
Download or read book Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Author :
Publisher : Elsevier
ISBN 13 : 0080541011
Total Pages : 333 pages
Book Rating : 4.0/5 (85 download)
Download or read book Processing and Properties of Compound Semiconductors written by and published by Elsevier. This book was released on 2001-10-20 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
