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Mixed Conduction In Semi Insulating Gallium Arsenide
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Book Synopsis Mixed Conduction in Semi-Insulating Gallium Arsenide by : J. J. Winter
Download or read book Mixed Conduction in Semi-Insulating Gallium Arsenide written by J. J. Winter and published by . This book was released on 1982 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hall effect and conductivity measurements made on semi-insulating bulk GaAs are examined by a new approach to mixed conduction analysis. Based on Fermi level and electron mobility analyses of conductivity and Hall coefficient, it uses revised values of effective densities of states at the band edges, and electron/hole mobility ratios recently adopted by other workers. The treatment provides a visual analysis of the system in terms of the electrical parameters and impurity densities, and establishes criteria for the onset of mixed conduction. (Author).
Book Synopsis Growth and Characterization of Bulk, Semi-Insulating Gallium Arsenide by : R. L. Ross
Download or read book Growth and Characterization of Bulk, Semi-Insulating Gallium Arsenide written by R. L. Ross and published by . This book was released on 1981 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: The physical and electrical properties of GaAs show it to be an important semiconductor material for use in various electronic devices associated with advanced military systems. However, the realization of enhanced device performance has been delayed, partly due to the lack of consistent, high quality, semi-insulating GaAs substrate material. A modified liquid-encapsulated Czochralski technique employing pressure-assisted, in-situ compounding is described. This process, first demonstrated in the United States by the US Army Electronics Technology and Devices Laboratory, consistently yields high resistivity (to 10 to the 9th power ohm-cm) GaAs without the intentional addition of charge compensators. This approach is now becoming the basis for U.S. volume production of large diameter, high quality, semi-insulating GaAs material. An automated system for the measurement of transport properties by use of the van der Pauw method is described. A mixed conduction analysis allows the direct determination of individual carrier concentrations and mobilities, intrinsic carrier concentration and Fermi level. Applied to ET & DL's non-Cr-doped GaAs, this analysis yields electron mobilities higher than Cr-doped material and Fermi levels which are nearly intrinsic. (Author).
Book Synopsis Analysis of Electrically Active Impurity Levels in In-situ Compounded Semi-Insulating Gallium Arsenide by : H. A. Leupold
Download or read book Analysis of Electrically Active Impurity Levels in In-situ Compounded Semi-Insulating Gallium Arsenide written by H. A. Leupold and published by . This book was released on 1981 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Conductivity and Hall measurements were made on semi-insulating GaAs samples grown with a recently developed process using in-situ compounding with liquid encapsulated (B2O3) Czochralski growth techniques. Mixed conduction analysis in combination with a nomographic analysis of charge balance and conduction was used to elucidate compensation in this material. Given the Cr concentration in one sample, the use of an iterative self-consistent procedure allowed the deduction of total donor and acceptor concentrations for identically prepared Cr-doped and undoped samples. Further analysis yielded the compensation ratio and energy level of the dominant acceptor of a third specimen. A subsequent spark source analysis confirmed the high purity of this in-situ compounded material, as well as the conclusions and utility of the nomographic analysis. (Author).
Book Synopsis Surface Conduction Mechanism in Semi-insulating Gallium Arsenide by : David Muchwe Wainaina
Download or read book Surface Conduction Mechanism in Semi-insulating Gallium Arsenide written by David Muchwe Wainaina and published by . This book was released on 1992 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semi-insulating III-V Materials by :
Download or read book Semi-insulating III-V Materials written by and published by . This book was released on 1982 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaAs Microelectronics by : Norman G. Einspruch
Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Photo-initiated Self-sustaining Conduction State in Semi-insulating GaAs by : Chun Jiang
Download or read book A Photo-initiated Self-sustaining Conduction State in Semi-insulating GaAs written by Chun Jiang and published by . This book was released on 1984 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1990 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Tech Notes written by and published by . This book was released on 1984 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductors by : Otfried Madelung
Download or read book Semiconductors written by Otfried Madelung and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Data Handbook is a updated and largely extended new edition of the book "Semiconductors: Basic Data". The data of the former edition have been updated and a complete representation of all relevant basic data is now given for all known groups of semiconducting materials.
Book Synopsis Gallium Arsenide and Related Compounds by :
Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1990 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique by : David J. Miller
Download or read book Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique written by David J. Miller and published by Stanford University. This book was released on 2011 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic amplifiers and circuits; however there has been no bulk method for the production of GaN substrates for device layer growth. Instead, thick GaN layers are heteroepitaxially deposited onto non-native substrates (usually sapphire) by one of two vapor phase epitaxy (VPE) techniques: MOVPE (metalorganic VPE) or HVPE (hydride VPE). Each method has its strengths and weaknesses: MOVPE has precise growth rate and layer thickness control but it is slow and expensive; HVPE is a low-cost method for high rate deposition of thick GaN, but it lacks the precise control and heterojunction layer growth required for device structures. Because of the large (14%) lattice mismatch, GaN grown on sapphire requires the prior deposition of a low temperature MOVPE nucleation layer using a second growth process in a separate deposition system. Here we present a novel hybrid VPE system incorporating elements of both techniques, allowing MOVPE and HVPE in a single growth run. In this way, a thick GaN layer can be produced directly on sapphire. GaN growth commences as small (50-100 nm diameter) coherent strained 3-dimensional islands which coalesce into a continuous film, after which 2-dimensional layer growth commences. The coalescence of islands imparts significant stress into the growing film, which increases with the film thickness until catastrophic breakage occurs, in-situ. Additionally, the mismatch in thermal expansion rates induces compressive stress upon cooling from the growth temperature of 1025°C. We demonstrate a growth technique that mitigates these stresses, by using a 2-step growth sequence: an initial high growth rate step resulting in a pitted but relaxed film, followed by a low growth rate smoothing layer. As a result, thick (> 50 [Mu]m) and freestanding films have been grown successfully. X-ray rocking curve linewidth of 105 arcseconds and 10K PL indicating no "yellow" emission indicate that the material quality is higher than that produced by conventional MOVPE. By further modifying the hybrid system to include a metallic Mn source, it is possible to grow a doped semi-insulating GaN template for use in high frequency electronics devices.
Book Synopsis Gallium Arsenide by : International Gallium Arsenide Symposium, 2nd, Dallas, 1968
Download or read book Gallium Arsenide written by International Gallium Arsenide Symposium, 2nd, Dallas, 1968 and published by . This book was released on 1969 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1983-11-16 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Book Synopsis Semi-Insulating III–V Materials by : REES
Download or read book Semi-Insulating III–V Materials written by REES and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.
Book Synopsis A Theoretical Approach to the Calculation of Annealed Impurity Profiles of Ion Implanted Boron Into Silicon by : Stanford University. Stanford Electronics Laboratories
Download or read book A Theoretical Approach to the Calculation of Annealed Impurity Profiles of Ion Implanted Boron Into Silicon written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1977 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: A multi-stream diffusion model is proposed for te calculation of the annealing behavior of boron that is ion implanted into silicon at room temperature and subsequently annealed. This model is capable of predicting both the redistribution and the electrical activation of boron during the anneal, as a realistic model should. The calculated results compare very samples that are implanted at room temperature with boron in the dose range from 10 to the 14 power to 10 to the 16th power ions/sq cm and subsequently annealed in the temperature range from 800 C to 1000 C. This range of dose and annealing conditions includes both the typical applications of ion implantation as it is applied in the fabrication of devices nad the unconventional cases of high dose implants and low temperature annealing. (Author).
