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Millimeter Wave Gan Power Amplifier Design
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Book Synopsis Millimeter-Wave Gan Power Amplifier Design by : Edmar Camargo
Download or read book Millimeter-Wave Gan Power Amplifier Design written by Edmar Camargo and published by Artech House Publishers. This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives you - in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You'll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.
Download or read book FIELD & STREAM JUL 2008 written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Millimeter-Wave Power Amplifiers by : Jaco du Preez
Download or read book Millimeter-Wave Power Amplifiers written by Jaco du Preez and published by Springer. This book was released on 2017-10-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.
Book Synopsis Millimeter-Wave GaN Power Amplifier Design by : Edmar Camargo
Download or read book Millimeter-Wave GaN Power Amplifier Design written by Edmar Camargo and published by Artech House. This book was released on 2022-05-31 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.
Book Synopsis Gan Hemt Modeling and Design for Mm and Sub-Mm Wave Power Amplifiers by : Diego Guerra
Download or read book Gan Hemt Modeling and Design for Mm and Sub-Mm Wave Power Amplifiers written by Diego Guerra and published by LAP Lambert Academic Publishing. This book was released on 2012-02 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers.
Book Synopsis Microwave High Power High Efficiency GaN Amplifiers for Communication by : Subhash Chandra Bera
Download or read book Microwave High Power High Efficiency GaN Amplifiers for Communication written by Subhash Chandra Bera and published by Springer Nature. This book was released on 2022-11-29 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.
Book Synopsis Design of Millimeter-Wave Power Amplifiers in Gallium Nitride High-Electron-Mobility Transistor Technology by : Maciej Cwiklinski
Download or read book Design of Millimeter-Wave Power Amplifiers in Gallium Nitride High-Electron-Mobility Transistor Technology written by Maciej Cwiklinski and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis mm-Wave Silicon Power Amplifiers and Transmitters by : Hossein Hashemi
Download or read book mm-Wave Silicon Power Amplifiers and Transmitters written by Hossein Hashemi and published by Cambridge University Press. This book was released on 2016-04-04 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Build high-performance, energy-efficient circuits with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems.
Book Synopsis Design and Analysis of Millimeter-wave Power Amplifier by : 趙維邦
Download or read book Design and Analysis of Millimeter-wave Power Amplifier written by 趙維邦 and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Millimeter-Wave Circuits for 5G and Radar by : Gernot Hueber
Download or read book Millimeter-Wave Circuits for 5G and Radar written by Gernot Hueber and published by Cambridge University Press. This book was released on 2019-06-20 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover the concepts, architectures, components, tools, and techniques needed to design millimeter-wave circuits for current and emerging wireless system applications. Focusing on applications in 5G, connectivity, radar, and more, leading experts in radio frequency integrated circuit (RFIC) design provide a comprehensive treatment of cutting-edge physical-layer technologies for radio frequency (RF) transceivers - specifically RF, analog, mixed-signal, and digital circuits and architectures. The full design chain is covered, from system design requirements through to building blocks, transceivers, and process technology. Gain insight into the key novelties of 5G through authoritative chapters on massive MIMO and phased arrays, and learn about the very latest technology developments, such as FinFET logic process technology for RF and millimeter-wave applications. This is an essential reading and an excellent reference for high-frequency circuit designers in both academia and industry.
Book Synopsis Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers by : Eric Kerhervé
Download or read book Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers written by Eric Kerhervé and published by Elsevier. This book was released on 2015-01-07 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniques The architectures allowing the optimum design of multimode Si RF and mmW power amplifiers How to make designs more efficient by employing new design techniques such as linearization and efficiency improvement Layout considerations Examples of schematic, layout, simulation and measurement results Addresses the problems of high power generation, faithful construction of non-constant envelope constellations, and efficient and well control power radiation from integrated silicon chips Demonstrates how silicon technology can solve problems and trade-offs of power amplifier design, including price, size, complexity and efficiency Written and edited by the top contributors to the field
Book Synopsis GaN HEMT Modeling and Design for Millimeter and Sub-millimeter Wave Power Amplifiers Through Monte Carlo Particle-based Device Simulations by : Diego Guerra
Download or read book GaN HEMT Modeling and Design for Millimeter and Sub-millimeter Wave Power Amplifiers Through Monte Carlo Particle-based Device Simulations written by Diego Guerra and published by . This book was released on 2011 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive towards device scaling and large output power in millimeter and sub-millimeter wave power amplifiers results in a highly non-linear, out-of-equilibrium charge transport regime. Particle-based Full Band Monte Carlo device simulators allow an accurate description of this carrier dynamics at the nanoscale. This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology, through a modeling approach that allows a fair comparison, indicating that the N-face devices exhibit improved performance with respect to Ga-face ones due to the natural back-barrier confinement that mitigates short-channel-effects. An investigation is then carried out on the minimum aspect ratio (i.e. gate length to gate-to-channel-distance ratio) that limits short channel effects in ultra-scaled GaN and InP HEMTs, indicating that this value in GaN devices is 15 while in InP devices is 7.5. This difference is believed to be related to the different dielectric properties of the two materials, and the corresponding different electric field distributions. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated, finding that the effective gate length is increased by fringing capacitances, enhanced by the dielectrics in regions adjacent to the gate for layers thicker than 5 nm, strongly affecting the frequency performance of deep sub-micron devices. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of mm-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a CellularMonte Carlo (CMC) code is self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this simulation approach is possible only due to the computational efficiency of the CMC, which uses pre-computed scattering tables. On the other hand, HB allows the direct simulation of the steady-state behavior of circuits with long transient time. This work provides an accurate and efficient tool for the device early-stage design, which allows a computerbased performance evaluation in lieu of the extremely time-consuming and expensive iterations of prototyping and experimental large-signal characterization.
Book Synopsis Design, Characterization, and Modeling of GaN Based HFETs for Millimeter Wave and Microwave Power Amplifier Applications by : Adam M. Conway
Download or read book Design, Characterization, and Modeling of GaN Based HFETs for Millimeter Wave and Microwave Power Amplifier Applications written by Adam M. Conway and published by . This book was released on 2006 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Heterostructure Field Effect Transistors (HFETs) have been the subject of intense research over the last decade, and provide exciting opportunities for high power microwave and millimeter wave power amplifiers. While extremely high power densities and efficiencies have been achieved at relatively low microwave frequencies, there are still material and device challenges which prevent the GaN HFETs from being used commercially at higher frequencies. The work discussed herein attempts to improve transistor power performance at microwave and millimeter wave frequency range by gaining a physical understanding of anomalous device behavior. The work demonstrates that by comparing nominal device characteristics measured using standard techniques (DC, s-parameters) with to pulsed I-V measurements taken at judiciously chosen quiescent bias points, device performance under large single conditions can be inferred. Physical simulations of GaN HFETs which exhibit good agreement with measurements are described. The effects of layer structure and geometry on device performance are calculated and measured. It is shown that the anomalous transient phenomena collectively known at "current slump" can be accurately simulated by taking into account nonlinear transport of charge along the surface at the drain edge of the gate. A novel measurement of FET thermal resistance is presented. Using three dimensional heat flow simulations which incorporate temperature dependent thermal conditivities, the thermal characteristics of various GaN HFET layer structures are compared. A novel measurement of FET thermal resistance is presented. Using three dimensional heat flow simulations which incorporate temperature dependent thermal conditivities, the thermal characteristics of various GaN HFET layer structures are compared. Compact-models of GaN HFETs were developed which phenomena logically include anomalous transient behavior. The models accurately reproduced device performance under large signal conditions.
Book Synopsis Microwave Mixer Technology and Applications by : Bert Henderson
Download or read book Microwave Mixer Technology and Applications written by Bert Henderson and published by Artech House. This book was released on 2013-08-01 with total page 877 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although microwave mixers play a critical role in wireless communication and other microwave applications employing frequency conversion circuits, engineers find that most books on this subject emphasize theoretical aspects, rather than practical applications. That’s about to change with the forthcoming release of Microwave Mixer Technology and Applications. Based on a review of over one thousand patents on mixers and frequency conversion, authors Bert Henderson and Edmar Camargo have written a comprehensive book for mixer designers who want solid ideas for solving their own design challenges. Many of the important and most interesting patents and related circuits are discussed in the several application oriented chapters. In addition, important contributions from the technical literature are included to provide a solid theoretical foundation. This book contains both introductory and advanced material about active and passive mixers that use bipolar transistor, FET, or diode switching devices. Theory and design details are presented for dozens of important mixer designs, with practical application information derived from the authors’ decades of experience.
Book Synopsis Design of Millimeter-wave High Linearity and High Power Amplifiers by : 王俊凱
Download or read book Design of Millimeter-wave High Linearity and High Power Amplifiers written by 王俊凱 and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Switchmode RF and Microwave Power Amplifiers by : Andrei Grebennikov
Download or read book Switchmode RF and Microwave Power Amplifiers written by Andrei Grebennikov and published by Academic Press. This book was released on 2021-03-19 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt: Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations
Book Synopsis Development of Millimeter-wave Distributed Power Amplifier MMICs Using Gallium Nitride HEMTs by : Rajkumar Santhakumar
Download or read book Development of Millimeter-wave Distributed Power Amplifier MMICs Using Gallium Nitride HEMTs written by Rajkumar Santhakumar and published by . This book was released on 2010 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation utilizes the advancement in GaN HEMT technology to demonstrate ultra-broadband state-of-the-art MMICs up to the millimeter-wave frequency range. A distributed amplifier circuit topology is selected and an amplifier with a record 50 GHz bandwidth is demonstrated. This amplifier achieves a gain of 5 dB and output power of over 130 mW. The gain bandwidth product for this amplifier is 90 GHz.
