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Author : George J. Rogers
Publisher :
ISBN 13 :
Total Pages : 60 pages
Book Rating : 4.:/5 (31 download)
Download or read book Measurement of Transistor Scattering Parameters written by George J. Rogers and published by . This book was released on 1975 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 64 pages
Book Rating : 4.:/5 (3 download)
Download or read book NBS Special Publication written by and published by . This book was released on 1975 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Matthias Rudolph
Publisher : Cambridge University Press
ISBN 13 : 1139502263
Total Pages : 367 pages
Book Rating : 4.1/5 (395 download)
Download or read book Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and published by Cambridge University Press. This book was released on 2011-10-13 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Author : Inder Bahl
Publisher : John Wiley & Sons
ISBN 13 : 9780470462317
Total Pages : 696 pages
Book Rating : 4.4/5 (623 download)
Download or read book Fundamentals of RF and Microwave Transistor Amplifiers written by Inder Bahl and published by John Wiley & Sons. This book was released on 2009-06-17 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Author : Ramon L. Jesch
Publisher :
ISBN 13 :
Total Pages : 64 pages
Book Rating : 4.:/5 (31 download)
Download or read book Characterization of a High Frequency Probe Assembly for Integrated Circuit Measurement written by Ramon L. Jesch and published by . This book was released on 1975 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed, applications-oriented description of a measurement technique that characterizes a high-frequency probe assembly for integrated circuit measurements is given along with the procedure that extracts the parasitic effects of the probe assembly from measurements made at the input connectors of the probe assembly. The scattering parameters of an integrated-circuit device or transistor can now be extracted and accurately determined up to 2 GHz at the wafer stage of assembly. This represents a significant advance over conventional techniques that enable only dc parameters to be measured. Measurement results using this technique are given along with the precision of values obtained as well as the nature of the measurement bias introduced by the probe assembly.
Author : United States. National Bureau of Standards
Publisher :
ISBN 13 :
Total Pages : 58 pages
Book Rating : 4.3/5 (91 download)
Download or read book Methods of Measurement for Semiconductor Materials, Process Control, and Devices written by United States. National Bureau of Standards and published by . This book was released on 1973 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : W. Murray Bullis
Publisher :
ISBN 13 :
Total Pages : 52 pages
Book Rating : 4.:/5 (31 download)
Download or read book Methods of Measurement for Semiconductor Materials, Process Control, and Devices written by W. Murray Bullis and published by . This book was released on 1971 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : United States. National Bureau of Standards
Publisher :
ISBN 13 :
Total Pages : 78 pages
Book Rating : 4.3/5 ( download)
Download or read book Methods of Measurement for Semiconductor Materials, Process Control, and Devices; Quarterly Report written by United States. National Bureau of Standards and published by . This book was released on 1970 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Pierre Jarry
Publisher : John Wiley & Sons
ISBN 13 : 1119073103
Total Pages : 365 pages
Book Rating : 4.1/5 (19 download)
Download or read book Microwave Amplifier and Active Circuit Design Using the Real Frequency Technique written by Pierre Jarry and published by John Wiley & Sons. This book was released on 2016-03-21 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: Describes the use of the Real Frequency Technique for designing and realizing RF/microwave amplifiers and circuits This book focuses on the authors' Real Frequency Technique (RFT) and its application to a wide variety of multi-stage microwave amplifiers and active filters, and passive equalizers for radar pulse shaping and antenna return loss applications. The first two chapters review the fundamentals of microwave amplifier design and provide a description of the RFT. Each subsequent chapter introduces a new type of amplifier or circuit design, reviews its design problems, and explains how the RFT can be adapted to solve these problems. The authors take a practical approach by summarizing the design steps and giving numerous examples of amplifier realizations and measured responses. Provides a complete description of the RFT as it is first used to design multistage lumped amplifiers using a progressive optimization of the equalizers, leading to a small number of parameters to optimize simultaneously Presents modifications to the RFT to design trans-impedance microwave amplifiers that are used for photodiodes acting as high impedance current sources Discusses the methods using the RFT to optimize equalizers made of lossy distributed networks Covers methods and examples for designing standard linear multi-stage power amplifiers and those using arborescent structures Describes how to use the RFT to design multi ]stage active filters Shows the flexibility of the RFT to solve a variety of microwave circuit design problems like the problem of passive equalizer design for Radar receivers Examines a possible method for the synthesis of microwave antennas using the RFT Microwave Amplifier and Active Circuit Design Using the Real Frequency Technique is intended for researchers and RF and microwave engineers but is also suitable for advanced graduate students in circuit design. Dr. Beneat and Dr. Jarry are members of the editorial board of Wiley’s International Journal of RF and Microwave Computer Aided Engineering. They have published seven books together, including Advanced Design Techniques and Realizations of Microwave and RF Filters (Wiley-IEEE 2008), Design and Realizations of Miniaturized Fractals RF and Microwave Filters (Wiley 2009), Miniaturized Microwave Fractal Filters—M2F2 (Wiley 2012), and RF and Microwave Electromagnetism (Wiley-ISTE 2014).
Author :
Publisher :
ISBN 13 :
Total Pages : 68 pages
Book Rating : 4.:/5 (3 download)
Download or read book NBS Technical Note written by and published by . This book was released on 1975-04 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gunter Kompa
Publisher : Artech House
ISBN 13 : 1630817457
Total Pages : 609 pages
Book Rating : 4.6/5 (38 download)
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 609 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Author : United States. National Bureau of Standards. Office of Engineering and Information Processing Standards
Publisher :
ISBN 13 :
Total Pages : 416 pages
Book Rating : 4.:/5 (3 download)
Download or read book Directory of Committee Memberships of the National Bureau of Standards Staff on Engineering Standards Committees written by United States. National Bureau of Standards. Office of Engineering and Information Processing Standards and published by . This book was released on 1975 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Keith A. Jenkins
Publisher : Springer Nature
ISBN 13 : 3030777758
Total Pages : 173 pages
Book Rating : 4.0/5 (37 download)
Download or read book RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors written by Keith A. Jenkins and published by Springer Nature. This book was released on 2021-12-15 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
Author : Jianjun Gao
Publisher : John Wiley & Sons
ISBN 13 : 1118921550
Total Pages : 394 pages
Book Rating : 4.1/5 (189 download)
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Author : Yogesh Singh Chauhan
Publisher : Elsevier
ISBN 13 : 0323999409
Total Pages : 262 pages
Book Rating : 4.3/5 (239 download)
Download or read book GaN Transistor Modeling for RF and Power Electronics written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-20 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction
Author : Norman Dye
Publisher : Newnes
ISBN 13 : 0750672811
Total Pages : 317 pages
Book Rating : 4.7/5 (56 download)
Download or read book Radio Frequency Transistors written by Norman Dye and published by Newnes. This book was released on 2001 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: This newly revised edition adds two entirely new chapters, one of LDMOS high power RF transistors and how they differ from bipolars, and TMOS FETs, etc. as well as another chapter on designing high power RF amplifiers using LDMOS.
Author : Mark J. W. Rodwell
Publisher : World Scientific
ISBN 13 : 9789812810014
Total Pages : 374 pages
Book Rating : 4.8/5 (1 download)
Download or read book High-speed Integrated Circuit Technology written by Mark J. W. Rodwell and published by World Scientific. This book was released on 2001 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.
