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Author : Jacques Germain Ruch
Publisher :
ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (996 download)
Download or read book Measurement of the Velocity-field Characteristic of Gallium Arsenide written by Jacques Germain Ruch and published by . This book was released on 1967 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Vasilis E. Riginos
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (115 download)
Download or read book Determination of the Velocity-field Characteristic of Gallium Arsenide from High-field Domain Measurements written by Vasilis E. Riginos and published by . This book was released on 1973 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jacques Germain Ruch
Publisher :
ISBN 13 :
Total Pages : 178 pages
Book Rating : 4.F/5 ( download)
Download or read book Measurement of the Velocity-field Characteristic of Gallium Arsenide written by Jacques Germain Ruch and published by . This book was released on 1967 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transport properties of the electrons in GaAs have been investigated; i.e., the absolute value of the electron drift velocity, the diffusion coefficient, and the trapping cross-section has been measured for the first time as a function of the electric field. The specimen used in this experiment consists of a slab of semi-insulating boat-grown GaAs. Thin contacts were evaporated on each face; one, the cathode contact, less than 1000A thick, forms the noninjecting Schottky-barrier. The other, the anode, is ohmic. A 1 microsecond voltage pulse is placed across the diode and produces an essentially uniform electric field within it. An electron beam was pulsed on for less than 0.1 nsec during the voltage pulse. The experimental results are in excellent agreement with the Butcher-Fawcett theory, with a low field mobility of 7500 sq cm/V-sec, a threshold field of 3300 V/cm and an initial negative mobility of 2600 sq cm/V-sec. (Author).
Author : Donald F. Guise
Publisher :
ISBN 13 :
Total Pages : 426 pages
Book Rating : 4.:/5 (69 download)
Download or read book Determination of the Velocity - Field Characteristic of Gallium Arsenide from Franz-Keldysh Electroabsorption written by Donald F. Guise and published by . This book was released on 1979 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stanford University. Microwave Laboratory
Publisher :
ISBN 13 :
Total Pages : 28 pages
Book Rating : 4.F/5 ( download)
Download or read book New Measurement of the Velocity Field Characteristic of GaAs written by Stanford University. Microwave Laboratory and published by . This book was released on 1969 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dick Mei Chang
Publisher :
ISBN 13 :
Total Pages : 130 pages
Book Rating : 4.F/5 ( download)
Download or read book Measurement of the Negative Differential Mobility in Gallium Arsenide and Germanium written by Dick Mei Chang and published by . This book was released on 1969 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dependence of the drift velocity of electrons on the electric field (v-E characteristics) in GaAs at room temperature and Ge at low temperatures (below 78 degrees K) were investigated. The primary object of these investigations is the establishment and characterization of negative differential mobility regions in the v-E characteristics. (Author).
Author : Boggavarapu Lakshamana Rao
Publisher :
ISBN 13 :
Total Pages : 258 pages
Book Rating : 4.E/5 ( download)
Download or read book Microwave Measurement of the Negative Differential Mobility in N-GaAs written by Boggavarapu Lakshamana Rao and published by . This book was released on 1969 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: The negative differential mobility in bulk n-GaAs was measured using microwave techniques. Measurements were made both at room temperature and at temperatures below room temperature for samples of n-type GaAs having different low-field mobilities and doping densities at room temperature. The average conductivity of the sample when subjected to different peak r-f electric fields was measured and the instantaneous conductivity deduced by solving an integral equation. (Author).
Author : Michael Albert Haase
Publisher :
ISBN 13 :
Total Pages : 84 pages
Book Rating : 4.:/5 (13 download)
Download or read book Subthreshold Electron Velocity-field Characteristics of Gallium Arsenide and Indium Gallium Arsenide written by Michael Albert Haase and published by . This book was released on 1985 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 542 pages
Book Rating : 4.:/5 (319 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sadao Adachi
Publisher : World Scientific
ISBN 13 : 9789810219253
Total Pages : 700 pages
Book Rating : 4.2/5 (192 download)
Download or read book GaAs and Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Author : Omar Wing
Publisher : Springer Science & Business Media
ISBN 13 : 1461315417
Total Pages : 198 pages
Book Rating : 4.4/5 (613 download)
Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
Author : John Sydney Blakemore
Publisher : Springer Science & Business Media
ISBN 13 : 9780883185254
Total Pages : 422 pages
Book Rating : 4.1/5 (852 download)
Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : T. Koryu Ishii
Publisher : Elsevier
ISBN 13 : 0080523773
Total Pages : 735 pages
Book Rating : 4.0/5 (85 download)
Download or read book Components and Devices written by T. Koryu Ishii and published by Elsevier. This book was released on 2013-10-22 with total page 735 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Microwave Technology, Volume I: Components and Devices is a compact reference tool which provides both the fundamentals and applications of microwave technology. This volume covers components and devices used in microwave circuits. Chapters in the book discuss topics on microwave transmission lines, microwave resonators, and microstrip line components. Microwave impedance matching techniques, applications of microwave thermionic density modulated devices, and microwave transistor oscillators and amplifiers are tackled as well. Technicians, scientists, engineers, and science and engineering students who are involved in microwave technology will find the text very useful.
Author : Lester F. Eastman
Publisher :
ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.:/5 (89 download)
Download or read book Gallium Arsenide Microwave Bulk and Transit-time Devices written by Lester F. Eastman and published by . This book was released on 1972 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : R.L. Ross
Publisher : Springer Science & Business Media
ISBN 13 : 9400916302
Total Pages : 352 pages
Book Rating : 4.4/5 (9 download)
Download or read book Pseudomorphic HEMT Technology and Applications written by R.L. Ross and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: PHEMT devices and their incorporation into advanced monolithic integrated circuits is the enabling technology for modern microwave/millimeter wave system applications. Although still in its infancy, PHEMT MIMIC technology is already finding applications in both military and commercial systems, including radar, communication and automotive technologies. The successful team in a globally competitive market is one in which the solid-state scientist, circuit designer, system engineer and technical manager are cognizant of those considerations and requirements that influence each other's function. This book provides the reader with a comprehensive review of PHEMT technology, including materials, fabrication and processing, device physics, CAD tools and modelling, monolithic integrated circuit technology and applications. Readers with a broad range of specialities in one or more of the areas of materials, processing, device physics, circuit design, system design and marketing will be introduced quickly to important basic concepts and techniques. The specialist who has specific PHEMT experience will benefit from the broad range of topics covered and the open discussion of practical issues. Finally, the publication offers an additional benefit, in that it presents a broad scope to both the researcher and manager, both of whom must be aware and educated to remain relevant in an ever-expanding technology base.
Author : D.F. Barbe
Publisher : Springer Science & Business Media
ISBN 13 : 364288640X
Total Pages : 312 pages
Book Rating : 4.6/5 (428 download)
Download or read book Very Large Scale Integration (VLSI) written by D.F. Barbe and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Even elementary school students of today know that electronics can do fan tastic things. Electronic calculators make arithmetic easy. An electronic box connected to your TV set provides a wonderful array of games. Electronic boxes can translate languages! Electronics has even changed watches from a pair of hands to a set of digits. Integrated circuit (IC) chips, which use transistors to store information in binary form and perform binary arithmetic, make all of this possible. In just a short twenty years, the field of inte grated circuits has progressed from chips containing several transistors performing simple functions such as OR and AND functions to chips presently available which contain thousands of transistors performing a wide range of memory, control and arithmetic functions. In the late 1970's Very Large Scale Integration (VLSI) caught the imagin ation of the industrialized world. The United States, Japan and other coun tries now have substantial efforts to push the frontier of microelectronics across the one-micrometer barrier and into sub-micrometer features. The achievement of this goal will have tremendous impl ications, both technolo gical and economic for the countries involved.
Author : Dick Mei Chang
Publisher :
ISBN 13 :
Total Pages : 130 pages
Book Rating : 4.F/5 ( download)
Download or read book Measurement of the Negative Differential Mobility in Gallium Arsenide and Germanium written by Dick Mei Chang and published by . This book was released on 1969 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dependence of the drift velocity of electrons on the electric field (v-E characteristics) in GaAs at room temperature and Ge at low temperatures (below 78 degrees K) were investigated. The primary object of these investigations is the establishment and characterization of negative differential mobility regions in the v-E characteristics. (Author).
