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Material And Device Studies For The Development Of Gallium Nitride Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
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Book Synopsis Material and Device Studies for the Development of Gallium Nitride Heterojunction Bipolar Transistors by Molecular Beam Epitaxy by : Wei Li
Download or read book Material and Device Studies for the Development of Gallium Nitride Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by Wei Li and published by . This book was released on 2008 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Due to its unique physical properties, gallium nitride (GaN) is under intense investigation for the development of transistors for high power, high frequency and high temperature applications. The majority of existing literature addresses field effect transistors. This dissertation addresses a wide spectrum of materials and device studies required for the development of GaN-based heterojunction bipolar transistors (HBTs). The investigated structure has the emitter region based on n-Al x Ga 1-x N alloys, while the base and collector were based on p-In y Ga 1-y N and n-GaN, respectively. The growth and doping of the various layers of the transistor structure, on sapphire substrate, GaN-templates and free standing GaN substrates are addressed. Particular emphasis was placed on the p-type doping of the AlGaN and InGaN alloys with magnesium, both doping of bulk films as well as superlattices. The experimental results were compared with theoretical predictions of a self-consistent solution to the one-dimensional poisson and schrodinger equations. A hole concentration for p-InGaN of 9x10 18 CM -3 was obtained, which is the highest value published. The device aspect of this research addressed issues related to the development of novel methods of selective growth by molecular beam epitaxy (MBE) of the emitter onto the base. This was found to be necessary to avoid damage of the base during mesa etching. The final product of this research was the fabrication and DC characterization of HBT devices. This included various lithography, metallization, etching and annealing steps. The devices were evaluated under common base and common emitter configurations and the best result obtained was a room temperature gain of 59.
Book Synopsis Demonstration and Modeling of a Nitride-based Heterojunction Bipolar Transistor Using Nanomembrane Transfer by : Clincy Cheung
Download or read book Demonstration and Modeling of a Nitride-based Heterojunction Bipolar Transistor Using Nanomembrane Transfer written by Clincy Cheung and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunction bipolar transistors (HBT) are sought as a building block for implementation of modern broadband electronics, defense applications, and other mm-wave electronic systems demanding in high-speed and high-power performance. The push for greater frequency performance, higher power densities and reliability have pushed research towards wide-bandgap materials such as Gallium Nitride (GaN) given its superior intrinsic material properties, providing for higher breakdown voltage, and enabling higher power performance. However, GaN faces a fundamental limitation with p-type doping, limiting its adoption in RF power electronics. Attempts at a wide bandgap HBT to-date has exclusively relied on epitaxial growth using metal-organic chemical vapor deposition or molecular beam epitaxy (MBE) to fabricate a GaN-based transistor; however, none have yielded a device with both sufficient current gain and transition frequency - both key measures of performance in a bipolar transistor. Alternative materials for the different HBT layers have been considered but are limited by significant lattice mismatch. To bypass p-type GaN limitations and improve the base-collector junction with minimal interface trap density, a nanomembrane interlayer device transfer is proposed as an alternative for fabrication of an HBT. There are two aims in this dissertation: to demonstrate an experimental HBT with a sufficient current gain above 20 and demonstrate using computer-aided modeling that sufficient frequency performance can be achieved - both to demonstrate that a wide-bandgap HBT is both possible and worth further exploration for RF electronics. In Chapter 1, the landscape of research into wide-bandgap bipolar transistors is presented. In Chapter 2, multiple methods of integration for different diode pairs within the HBT are evaluated for probability of success in the overall device, where a GaAs-GaN base-collector diode is demonstrated to have the best performance using nanomembrane layer transfer. Additionally, an MBE-grown AlGaAs-GaAs film stack was transferred and demonstrated an emitter-base structure can be transferred with no degradation in performance. In Chapter 3, fabrication of the HBT is demonstrated using the best methods selected from Chapter 2, where a AlGaAs-GaAs-GaN HBT was demonstrated to have a current gain greater than 70. In Chapter 4, technology computer-aided design simulations were developed to validate the DC results shown in Chapter 2 and 3, and simulated transition frequencies of at least 60 GHz for the experimental structure fabricated in Chapter 3. Finally, in Chapter 5, next steps are outlined for exploration beyond this initial proof-of-concept device. Taken altogether, this dissertation serves to demonstrate a device structure with the potential to vastly exceed existing solutions that can be applied to a vast array of wide-bandgap materials without being limited by its p-type analogues, enabling performance for a wide array of applications in the next generations of electronics.
Book Synopsis Design and Fabrication of Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors by : Hong Wu
Download or read book Design and Fabrication of Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors written by Hong Wu and published by . This book was released on 2003 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Electronics by : Rüdiger Quay
Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub
Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Book Synopsis Development of Gallium Nitride Materials for Heterojunction Bipolar Transistors by : Jay M. Shah
Download or read book Development of Gallium Nitride Materials for Heterojunction Bipolar Transistors written by Jay M. Shah and published by . This book was released on 2006 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis III-Nitride Electronic Devices by : Rongming Chu
Download or read book III-Nitride Electronic Devices written by Rongming Chu and published by Academic Press. This book was released on 2019-10 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Book Synopsis Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004 by : R. Szweda
Download or read book Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004 written by R. Szweda and published by Elsevier. This book was released on 2000-12-05 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Book Synopsis Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors by : Shahzad Akbar
Download or read book Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors written by Shahzad Akbar and published by . This book was released on 1989 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium-Nitride (GaN) II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Book Synopsis Gallium Nitride and Related Materials by :
Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1996 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Related Materials II: Volume 468 by : C. R. Abernathy
Download or read book Gallium Nitride and Related Materials II: Volume 468 written by C. R. Abernathy and published by Materials Research Society. This book was released on 1997-08-13 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
Book Synopsis Development of Inverted (Al,Ga) as Heterojunction Bipolar Transistors by Molecular Beam Epitaxy by : Bruce Robert Hancock
Download or read book Development of Inverted (Al,Ga) as Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by Bruce Robert Hancock and published by . This book was released on 1985 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Related Materials: Volume 395 by : F. A. Ponce
Download or read book Gallium Nitride and Related Materials: Volume 395 written by F. A. Ponce and published by . This book was released on 1996-09-04 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Book Synopsis The Growth and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistor Structures by Molecular Beam Epitaxy by : Paul Michael Enquist
Download or read book The Growth and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistor Structures by Molecular Beam Epitaxy written by Paul Michael Enquist and published by . This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
