Local Parameters of Semiconductor Heterojunctions

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Publisher :
ISBN 13 :
Total Pages : 272 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis Local Parameters of Semiconductor Heterojunctions by : Xiaohua Yu

Download or read book Local Parameters of Semiconductor Heterojunctions written by Xiaohua Yu and published by . This book was released on 1992 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electronic Structure of Semiconductor Heterojunctions

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Publisher : Springer Science & Business Media
ISBN 13 : 9400930739
Total Pages : 348 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Electronic Structure of Semiconductor Heterojunctions by : Giorgio Margaritondo

Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

Characterization of Semiconductor Heterostructures and Nanostructures

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Publisher : Newnes
ISBN 13 : 044459549X
Total Pages : 829 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Giovanni Agostini

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Newnes. This book was released on 2013-04-11 with total page 829 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures

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Publisher : Elsevier
ISBN 13 : 0080558151
Total Pages : 501 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Giovanni Agostini

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Optoelectronic Organic-Inorganic Semiconductor Heterojunctions

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Publisher : CRC Press
ISBN 13 : 100032575X
Total Pages : 403 pages
Book Rating : 4.0/5 (3 download)

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Book Synopsis Optoelectronic Organic-Inorganic Semiconductor Heterojunctions by : Ye Zhou

Download or read book Optoelectronic Organic-Inorganic Semiconductor Heterojunctions written by Ye Zhou and published by CRC Press. This book was released on 2021-01-20 with total page 403 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic Organic-Inorganic Semiconductor Heterojunctions summarizes advances in the development of organic-inorganic semiconductor heterojunctions, points out challenges and possible solutions for material/device design, and evaluates prospects for commercial applications. Introduces the concept and basic mechanism of semiconductor heterojunctions Describes a series of organic-inorganic semiconductor heterojunctions with desirable electrical and optical properties for optoelectronic devices Discusses typical devices such as solar cells, photo-detectors, and optoelectronic memories Outlines the materials and device challenges as well as possible strategies to promote the commercial translation of semiconductor heterojunctions-based optoelectronic devices Aimed at graduate students and researchers working in solid-state materials and electronics, this book offers a comprehensive yet accessible view of the state of the art and future directions.

Dissertation Abstracts International

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Publisher :
ISBN 13 :
Total Pages : 736 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1995 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Surfaces and Interfaces: Physics and Electronics

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Publisher : Elsevier
ISBN 13 : 0444600167
Total Pages : 663 pages
Book Rating : 4.4/5 (446 download)

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Book Synopsis Surfaces and Interfaces: Physics and Electronics by : R.S. Bauer

Download or read book Surfaces and Interfaces: Physics and Electronics written by R.S. Bauer and published by Elsevier. This book was released on 2012-12-02 with total page 663 pages. Available in PDF, EPUB and Kindle. Book excerpt: Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Physics and Technology of Heterojunction Devices

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Publisher : IET
ISBN 13 : 9780863412042
Total Pages : 330 pages
Book Rating : 4.4/5 (12 download)

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Book Synopsis Physics and Technology of Heterojunction Devices by : Institution of Electrical Engineers

Download or read book Physics and Technology of Heterojunction Devices written by Institution of Electrical Engineers and published by IET. This book was released on 1991 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.

Scientific and Technical Aerospace Reports

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Publisher :
ISBN 13 :
Total Pages : 464 pages
Book Rating : 4.:/5 (3 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optical Properties of Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 9401580758
Total Pages : 327 pages
Book Rating : 4.4/5 (15 download)

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Book Synopsis Optical Properties of Semiconductors by : G. Martinez

Download or read book Optical Properties of Semiconductors written by G. Martinez and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is widely recognized that an understanding of the optical pro perties of matter will give a great deal of important information re levant to the fundamental physical properties. This is especially true in semiconductor physics for which, due to the intrinsic low screening of these materials, the optical response is quite rich. Their spectra reflect indeed as well electronic as spin or phonon transitions. This is also in the semiconductor field that artificial structures have been recently developed, showing for the first time specific physical properties related to the low dimentionality of the electronic and vi bronic properties : with this respect the quantum and fractional quan tum Hall effects are among the most well known aspects. The associated reduced screening is also a clear manifestation of these aspects and as such favors new optical properties or at least significantly enhan ces some of them. For all these reasons, it appeared necessary to try to review in a global way what the optical investigation has brought today about the understanding of the physics of semiconductors. This volume collects the papers presented at the NATO Advanced study Inst i tut e on "Optical Properties of Semiconductors" held at the Ettore Majorana Centre, Erice, Sicily on March 9th to 20th, 1992. This school brought together 70 scientists active in research related to optical properties of semiconductors. There were 12 lecturers who pro vided the main contributions .

Electronic States and Optical Transitions in Semiconductor Heterostructures

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Publisher : Springer Science & Business Media
ISBN 13 : 1461205352
Total Pages : 402 pages
Book Rating : 4.4/5 (612 download)

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Book Synopsis Electronic States and Optical Transitions in Semiconductor Heterostructures by : Fedor T. Vasko

Download or read book Electronic States and Optical Transitions in Semiconductor Heterostructures written by Fedor T. Vasko and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures. Although such structures have been known since the 1940s, it was only in the 1980s that they moved to the forefront of research. The resulting structures have remarkable properties not shared by bulk materials. The text begins with a description of the electronic properties of various types of heterostructures, including discussions of complex band-structure effects, localised states, tunnelling phenomena, and excitonic states. The focus of the remainder of the book is on optical properties, including intraband absorption, luminescence and recombination, Raman scattering, subband optical transitions, nonlinear effects, and ultrafast optical phenomena. The concluding chapter presents an overview of some of the applications that make use of the physics discussed. Appendices provide background information on band structure theory, kinetic theory, electromagnetic modes, and Coulomb effects.

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

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Publisher : World Scientific
ISBN 13 : 9814552399
Total Pages : 818 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference by : J Pollman

Download or read book Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.

Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes)

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Publisher : World Scientific
ISBN 13 : 9814550159
Total Pages : 2858 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) by : David J Lockwood

Download or read book Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) written by David J Lockwood and published by World Scientific. This book was released on 1995-01-20 with total page 2858 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.

Properties of Impurity States in Superlattice Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1468455532
Total Pages : 350 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Properties of Impurity States in Superlattice Semiconductors by : C.Y. Fong

Download or read book Properties of Impurity States in Superlattice Semiconductors written by C.Y. Fong and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.

Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications

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Publisher : CRC Press
ISBN 13 : 1000072460
Total Pages : 341 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications by : Mohammad Karbalaei Akbari

Download or read book Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications written by Mohammad Karbalaei Akbari and published by CRC Press. This book was released on 2020-07-30 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering perspective on both the scientific and engineering aspects of 2D semiconductors, Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications discusses how to successfully engineer 2D materials for practical applications. It also covers several novel topics regarding 2D semiconductors which have not yet been discussed in any other publications. Features: Provides comprehensive information and data about wafer-scale deposition of 2D semiconductors, ranging from scientific discussions up to the planning of experiments and reliability testing of the fabricated samples Precisely discusses wafer-scale ALD and CVD of 2D semiconductors and investigates various aspects of deposition techniques Covers the new group of 2D materials synthesized from surface oxide of liquid metals and also explains the device fabrication and post-treatment of these 2D nanostructures Addresses a wide range of scientific and practical applications of 2D semiconductors and electronic and optoelectronic devices based on these nanostructures Offers novel coverage of 2D heterostructures and heterointerfaces and provides practical information about fabrication and application of these heterostructures Introduces the latest advancement in fabrication of novel memristors, artificial synapses and sensorimotor devices based on 2D semiconductors This work offers practical information valuable for engineering applications that will appeal to researchers, academics, and scientists working with and interested in developing an array of semiconductor electronic devices.

Wide-band-gap Semiconductors

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Publisher : Elsevier
ISBN 13 : 0444599177
Total Pages : 635 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Wide-band-gap Semiconductors by : C.G. Van de Walle

Download or read book Wide-band-gap Semiconductors written by C.G. Van de Walle and published by Elsevier. This book was released on 2012-12-02 with total page 635 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.

Proceedings of the 17th International Conference on the Physics of Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1461576822
Total Pages : 1580 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Proceedings of the 17th International Conference on the Physics of Semiconductors by : J.D. Chadi

Download or read book Proceedings of the 17th International Conference on the Physics of Semiconductors written by J.D. Chadi and published by Springer Science & Business Media. This book was released on 2013-12-01 with total page 1580 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.